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71. 发明申请

US20050184767A1 Current-voltage converter circuit and its control method 有权
标题翻译：电流 - 电压转换电路及其控制方法
公开(公告)号：US20050184767A1
公开(公告)日：2005-08-25
申请号：US11061119
申请日：2005-02-18
申请人： Kenji Shibata , Satoru Kawamoto
发明人： Kenji Shibata , Satoru Kawamoto
IPC分类号： G11C16/26 , G11C16/28 , H03D1/00
CPC分类号： G11C16/28
摘要： An input current flowing into a current-voltage conversion circuit (1) is converted to a voltage value at an output terminal SAIN and, then, a differential amplification circuit (5) amplifies and outputs a differential voltage between the voltage value and the reference voltage Vref. PMOS and NMOS transistors T1, T2 are connected between the output terminal SAIN and the power-supply voltage VCC. After the output terminal SAIN is precharged to the power-supply voltage VCC by making the transistors conductive, the current-voltage conversion operation is performed by making a voltage drop corresponding to the input current. The precharge operation precharges the output terminal SAIN up to the power-supply voltage VCC and supplies precharge to a common data line N3 and bit lines.
摘要翻译：流入电流 - 电压转换电路（1）的输入电流被转换为输出端子SAIN处的电压值，然后差分放大电路（5）放大并输出电压值与基准电压之间的差分电压 Vref。 PMOS和NMOS晶体管T 1，T 2连接在输出端子SAIN和电源电压VCC之间。在通过使晶体管导通来将输出端子SAIN预充电到电源电压VCC之后，通过使与输入电流相对应的电压降来执行电流 - 电压转换操作。预充电操作将输出端子SAIN预充电到电源电压VCC，并将预充电提供给公共数据线N 3和位线。

72. 发明授权

US06713449B1 E2F activity inhibitory compounds 失效
标题翻译： E2F活性抑制化合物
公开(公告)号：US06713449B1
公开(公告)日：2004-03-30
申请号：US09269576
申请日：1999-03-30
申请人： Kenji Shibata , Motoo Yamasaki , Tetsuo Yoshida , Tamio Mizukami
发明人： Kenji Shibata , Motoo Yamasaki , Tetsuo Yoshida , Tamio Mizukami
IPC分类号： A61K3817
CPC分类号： C07K14/4705 , A61K38/00
摘要： E2F-inhibiting compounds are represented by the formula: R1—A—R2 wherein A represents a peptide sequence comprising a partial amino acid sequence having at least 12 continuous residues in the sequence of the dimerization region or DNA binding region of the E2F family, which are useful as a therapeutic agent of diseases such as tumor and arteriosclerosis, for which abnormal cellular growth is implicated.
摘要翻译： E2F抑制化合物由下式表示：R 1 -AR 2其中A表示包含在二聚化区或DNA结合区的序列中具有至少12个连续残基的部分氨基酸序列的肽序列 E2F家族可用作肿瘤和动脉硬化等疾病的治疗剂，涉及细胞生长异常。

73. 发明授权

US06525023B1 Vascular smooth muscle cell growth factor 失效
标题翻译：血管平滑肌细胞生长因子
公开(公告)号：US06525023B1
公开(公告)日：2003-02-25
申请号：US09132769
申请日：1998-08-12
申请人： Motoo Yamasaki , Kenji Shibata , Nobuo Hanai , Akiko Furuya , Kaoru Miyamoto
发明人： Motoo Yamasaki , Kenji Shibata , Nobuo Hanai , Akiko Furuya , Kaoru Miyamoto
IPC分类号： A61K3818
CPC分类号： C07K14/475 , A61K38/00
摘要： The present invention provides a novel vascular smooth muscle cell growth factor, a DNA encoding VSGF, a vector containing the DNA, a method for producing a transformant obtained by transformation with the vector, a method for producing VSGF, an antibody specifically reactive to the VSGF and a method for producing the antibody. The VSGF of the present invention is useful for diagnosis and therapy of wound healing failure, intractable skin ulcer, or abnormal blood vessel forming disease by fibroblast growth factor.
摘要翻译：本发明提供新型的血管平滑肌细胞生长因子，编码VSGF的DNA，含有该载体的载体，通过载体转化获得的转化体的制造方法，VSGF的制造方法，与VSGF特异性反应的抗体和抗体的制造方法。本发明的VSGF可用于通过成纤维细胞生长因子诊断和治疗伤口愈合失败，难治性皮肤溃疡或异常血管形成疾病。

74. 发明授权

US5754105A Autohandler 失效
标题翻译：自动手柄
公开(公告)号：US5754105A
公开(公告)日：1998-05-19
申请号：US717510
申请日：1996-09-20
申请人： Kenji Shibata
发明人： Kenji Shibata
IPC分类号： H01L21/66 , B65G35/06 , B65G60/00 , H01L21/677 , G08B21/00
CPC分类号： B65G60/00 , B65G35/06
摘要： An autohandler for supplying a lot of feed trays carrying samples and for removing a lot of return trays loaded with tested samples. A loading mechanism has a feed tray elevator containing samples to be tested. An unloading mechanism has a return tray elevator for receiving return trays containing tested samples. An empty tray storage unit stores empty trays. A tray transfer hand transfers the trays. A sensor detects the feed tray elevator position. The sensor actuates an alarm when the feed tray elevator is almost empty.
摘要翻译：一种自动装订器，用于提供大量载有样品的进料盘，并用于清除装载测试样品的大量回送托盘。装载机构具有包含待测试样品的进料盘升降机。卸载机构具有用于接收包含测试样品的返回盘的返回托盘升降机。空托盘存储单元存储空托盘。托盘传送手转移托盘。传感器检测进纸盘升降位置。当进纸托盘升降机几乎为空时，传感器会启动报警。

75. 发明授权

US4912534A Nonvolatile semiconductor memory device 失效
标题翻译：非易失性半导体存储器件
公开(公告)号：US4912534A
公开(公告)日：1990-03-27
申请号：US394278
申请日：1989-08-14
申请人： Sumio Tanaka , Shigeru Atsumi , Kenji Shibata , Koichi Kanzaki
发明人： Sumio Tanaka , Shigeru Atsumi , Kenji Shibata , Koichi Kanzaki
IPC分类号： H01L21/8247 , G11C16/04 , H01L27/10 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , G11C16/0441
摘要： A second impurity diffusion layer is formed in a semiconductor substrate at a fixed distance from a first diffusion layer in the substrate. The diffusion layer is supplied with a program potential. An electrode is placed on the channel region between the first and second diffusion layers. Non-selected memory cells are prevented from becoming half-selected by electrically separating the first diffusion layer from the program potential according to signals from the electrode, resulting in substantial improvements in the reliability of the semiconductor device.
摘要翻译：第二杂质扩散层形成在与衬底中的第一扩散层固定距离的半导体衬底中。向扩散层提供程序电位。电极放置在第一和第二扩散层之间的沟道区上。通过根据来自电极的信号将第一扩散层与编程电位进行电分离，防止了未选择的存储单元的半选择，从而显着提高了半导体器件的可靠性。

76. 发明授权

US4687649A Flue gas desulfurization process 失效
标题翻译：烟气脱硫工艺
公开(公告)号：US4687649A
公开(公告)日：1987-08-18
申请号：US571065
申请日：1984-01-16
申请人： Hiroshi Kuroda , Tsukasa Nishimura , Masakatsu Nishimura , Taiki Hashimoto , Osamu Kanda , Shigeru Nozawa , Kenji Shibata
发明人： Hiroshi Kuroda , Tsukasa Nishimura , Masakatsu Nishimura , Taiki Hashimoto , Osamu Kanda , Shigeru Nozawa , Kenji Shibata
IPC分类号： B01D53/50 , B01D53/68 , B01D53/77 , B01D61/44 , C01F11/46 , F28D15/02 , C01B17/00
CPC分类号： F28D15/0266 , B01D53/501 , B01D53/508 , B01D53/68 , B01D61/44 , C01F11/464 , C02F2103/18 , C02F2201/46115
摘要： A flue gas desulfurization process by which gypsum can be recovered; the amount of water used therein is small, the effluent is treated in a closed system, the equipment used is minimized, and no scaling occurs; and an apparatus therefor are provided, the process including the following first process and second process: the first process comprising a cooling step of cooling and dedusting a SO.sub.2 -containing flue gas and removing acidic gases, an absorption step of contacting the cooled gas with a slurry containing limestone and lime to absorb and remove SO.sub.x and form CaSO.sub.3, a pH-adjusting step of adding H.sub.2 SO.sub.4 to the resulting slurry, an oxidation step of blowing an oxygen-containing gas in the pH-adjusted slurry to form gypsum, a step of concentrating the resulting gypsum slurry, a step of adjusting the concentration of the resulting slurry, a step of centrifugally separating gypsum, and a step of treating the effluent discharged from the cooling step, and the second process comprising, in the first process, further feeding the slurry of the absorption step to the cooling step where unreacted limestone is reacted with SO.sub.2 to form CaSO.sub.3 .

77. 发明授权

US4498226A Method for manufacturing three-dimensional semiconductor device by sequential beam epitaxy 失效
标题翻译：通过顺序光束外延制造三维半导体器件的方法
公开(公告)号：US4498226A
公开(公告)日：1985-02-12
申请号：US412241
申请日：1982-08-27
申请人： Tomoyasu Inoue , Kenji Shibata
发明人： Tomoyasu Inoue , Kenji Shibata
IPC分类号： H01L21/20 , H01L21/74 , H01L21/822 , H01L23/528 , H01L27/06 , H01L29/786 , H01L21/263 , H01L21/225
CPC分类号： H01L29/78618 , H01L21/2026 , H01L21/743 , H01L21/8221 , H01L23/5283 , H01L27/0688 , H01L29/78654 , H01L2924/0002
摘要： A method for manufacturing a three-dimensional semiconductor device which is capable of preventing the stepwise disconnection of an interconnection layer and performing a high integration thereby and which comprises the steps of: forming a polycrystalline or amorphous semiconductor layer on an insulating film having an opening at a predetermined position of a first element covered on a single-crystalline semiconductor substrate having the first element; irradiating an energy beam to said semiconductor layer to grow a single crystal in a predetermined region in said semiconductor layer using as a seed crystal that part of the semiconductor substrate which contacts with semiconductor layer; and forming a second element on the grown single-crystalline semiconductor region and forming an interconnection between the first and second elements by using a part of the single-crystalline semiconductor region from said semiconductor substrate to said second element.
摘要翻译：一种制造三维半导体器件的方法，该三维半导体器件能够防止互连层逐步断开并由此实现高集成度，其包括以下步骤：在具有开口的绝缘膜上形成多晶或非晶半导体层覆盖在具有第一元件的单晶半导体衬底上的第一元件的预定位置; 向所述半导体层照射能量束以在所述半导体层中的预定区域中生长单晶，使用所述半导体衬底的与半导体层接触的部分的晶种; 以及在生长的单晶半导体区域上形成第二元素，并且通过使用从所述半导体衬底到所述第二元件的单晶半导体区域的一部分在第一和第二元件之间形成互连。

78. 发明授权

US4457698A Oil burner 失效
标题翻译：油燃烧器
公开(公告)号：US4457698A
公开(公告)日：1984-07-03
申请号：US376955
申请日：1982-05-11
申请人： Kenji Shibata , Noboru Takahashi
发明人： Kenji Shibata , Noboru Takahashi
IPC分类号： F23D3/32 , F23D3/28 , F23Q7/08 , F23Q25/00
CPC分类号： F23D3/28
摘要： Oil burner, having an ignition mechanism and a wick movable upwardly and downwardly, and being operated with ease by completing wick lifting and ignition simultaneously in a single operation.
摘要翻译：油燃烧器，具有点火机构和可向上和向下移动的灯芯，并且通过在单次操作中同时完成灯芯提升和点火而容易地操作。

79. 发明授权

US08380917B2 Command control for synchronous memory device 有权
标题翻译：同步存储设备的命令控制
公开(公告)号：US08380917B2
公开(公告)日：2013-02-19
申请号：US12138307
申请日：2008-06-12
申请人： Kenji Shibata , Mitsuhiro Nagao , Satoru Kawmoto
发明人： Kenji Shibata , Mitsuhiro Nagao , Satoru Kawmoto
IPC分类号： G06F12/00 , G06F13/28 , G06F13/00
CPC分类号： G11C16/10 , G11C7/10 , G11C7/1072
摘要： Systems, methods, and circuits for command control for synchronous memory device are disclosed. In one embodiment, a memory device comprises a first synchronous memory controlled by a second group of commands which includes a first command receiving section for receiving a first group of commands, and a second command receiving section for receiving a command that is unique to the first synchronous memory and different from the first group of commands during execution of the first group of commands received by the first command receiving section. The synchronous memory further comprises a second synchronous memory controlled by the first group of commands, where the first synchronous memory and the second synchronous memory are coupled to a same data bus, and where the second group of commands is different from the first group of commands.
摘要翻译：公开了用于同步存储装置的命令控制的系统，方法和电路。在一个实施例中，存储器设备包括由第二组命令控制的第一同步存储器，该第二组命令包括用于接收第一组命令的第一命令接收部分和用于接收第一命令的唯一命令的第二命令接收部分同步存储器，并且在执行由第一命令接收部分接收的第一组命令期间与第一组命令不同。同步存储器还包括由第一组命令控制的第二同步存储器，其中第一同步存储器和第二同步存储器耦合到相同的数据总线，并且其中第二组命令与第一组命令不同。

80. 发明申请

US20110229656A1 IN-LIQUID PLASMA FILM-FORMING APPARATUS, ELECTRODE FOR IN-LIQUID PLASMA, AND FILM-FORMING METHOD USING IN-LIQUID PLASMA 有权
标题翻译：液体等离子体成膜装置，液体等离子体电极和使用液体等离子体的成膜方法
公开(公告)号：US20110229656A1
公开(公告)日：2011-09-22
申请号：US12671773
申请日：2009-03-02
申请人： Kenji Shibata , Toshihisa Shimo , Kyoko Kumagai , Hidetaka Hayashi , Shinya Okuda , Shinfuku Nomura , Hiromichi Toyota
发明人： Kenji Shibata , Toshihisa Shimo , Kyoko Kumagai , Hidetaka Hayashi , Shinya Okuda , Shinfuku Nomura , Hiromichi Toyota
IPC分类号： H05H1/48
CPC分类号： C23C16/509 , C23C16/26 , C23C16/4485 , H01J37/32357
摘要： In an in-liquid plasma film-forming apparatus having: a vessel 1 being capable of accommodating a substrate “S” and a liquid “L” including raw material therein; an electrode 2 for in-liquid plasma, electrode 2 which is disposed in the vessel 1; an electric power device 3 for supplying electricity to the electrode 2 for in-liquid plasma; the electrode 2 for in-liquid plasma is equipped with: a main electrode 21 having a discharging end 22; an auxiliary electrode 26 not only facing the discharging end 22 but also being disposed between the discharging end 22 and the substrate “S” that face each other; and a plasma generating unit 29 having a space that is demarcated by a surface 22a of the discharging end 22 and a surface 26a of the auxiliary electrode 26 facing the surface 22a, and being for generating plasma by means of electricity being supplied to the main electrode 21. And, a decomposed component of the raw material is deposited onto a surface of the substrate “S” by contacting the plasma, which has generated at the plasma generating unit 29, with the substrate “S.”By means of the present construction, it becomes feasible to generate plasma in liquid without ever using a second electrode that serves as a substrate.
摘要翻译：在液体等离子体成膜装置中，具有容纳基材“S”的容器1和包含原料的液体“L” 用于液体内等离子体的电极2，设置在容器1中的电极2; 用于向用于液体内等离子体的电极2供电的电力装置3; 用于液体内等离子体的电极2装备有：具有放电端22的主电极21; 辅助电极26不仅面向放电端22，而且还设置在放电端22和彼此相对的衬底“S”之间; 以及等离子体产生单元29，其具有由排放端22的表面22a和辅助电极26的面向表面22a的表面26a划分的空间，并且用于通过向主电极供电的方式产生等离子体并且，通过使在等离子体产生单元29产生的等离子体与基板“S”接触，将原料的分解成分沉积在基板“S”的表面上。借助于本构造在不用使用作为基板的第二电极的情况下，可以在液体中产生等离子体。

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