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71. 发明授权

US06576293B2 Method to improve copper thin film adhesion to metal nitride substrates by the addition of water 失效
公开(公告)号：US06576293B2
公开(公告)日：2003-06-10
申请号：US09817836
申请日：2001-03-26
申请人： Wei-Wei Zhuang , Sheng Teng Hsu , David R. Evans
发明人： Wei-Wei Zhuang , Sheng Teng Hsu , David R. Evans
IPC分类号： C23C1618
CPC分类号： H01L21/28556
摘要： A method of forming a copper thin film by chemical vapor deposition, includes introducing a wafer into a chemical vapor deposition chamber; humidifying helium gas with water to form a wet helium gas for use as the atmosphere in the chemical vapor deposition chamber; depositing a copper seed layer at a wet helium flow rate of between about 5.0 sccm and 20.0 sccm during a wafer temperature rise from ambient temperature to between about 150° C. to 230° C.; and depositing a copper thin film layer at a wet helium flow rate of between about 0.2 sccm to 1.0 sccm and at a temperature of between about 150° C. to 230° C.

72. 发明授权

US5994571A Substituted ethylene precursor and synthesis method 有权
标题翻译：取代乙烯前体及其合成方法
公开(公告)号：US5994571A
公开(公告)日：1999-11-30
申请号：US215921
申请日：1998-12-18
申请人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David Russell Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David Russell Evans , Sheng Teng Hsu
IPC分类号： C07C11/04 , C07F1/08 , C07F1/10 , C07F15/00 , C23C16/18 , H01L21/285 , C23C16/00
CPC分类号： C23C16/18 , C07F1/08
摘要： A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, H, and C.sub.1 to C.sub.8 alkoxyl. One variation, the 2-methyl-1-butene ligand precursor has proved to be stable at room temperature, and extremely volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. Because of the volatility, the deposition rate of copper deposited with this precursor is very high. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译：已经提供了具有取代的乙烯配体的Cu（hfac）前体。取代的乙烯配体包括与选自C1至C8烷基，C1至C8卤代烷基，H和C1至C8烷氧基的分子的键。一个变体，2-甲基-1-丁烯配体前体已被证明在室温下是稳定的，并且在较高温度下极易挥发。沉积有该前体的铜具有低电阻率和高粘合特性。由于挥发性，沉积有这种前体的铜的沉积速率非常高。已经提供了产生高产率的上述前体的合成方法。

73. 发明授权

US07192792B2 Method of changing an electrically programmable resistance cross point memory bit 有权
标题翻译：改变电可编程电阻交叉点存储器位的方法
公开(公告)号：US07192792B2
公开(公告)日：2007-03-20
申请号：US11066592
申请日：2005-02-24
申请人： Sheng Teng Hsu , Wei-Wei Zhuang
发明人： Sheng Teng Hsu , Wei-Wei Zhuang
IPC分类号： H01L21/66 , H01L31/111
CPC分类号： G11C11/15 , G11C11/16 , G11C11/5685 , G11C13/0007 , G11C13/004 , G11C2213/31 , G11C2213/77 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： Resistive cross point memory devices are provided, along with methods of manufacture and use, including a method of changing an electrically programmable resistance cross point memory bit. The memory device comprises an active layer of perovskite material interposed between upper electrodes and lower electrodes. A bit region located within the active layer at the cross point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. Memory circuits are provided to aid in the programming and read out of the bit region.
摘要翻译：提供了电阻式交叉点存储器件以及制造和使用方法，包括改变电可编程电阻交叉点存储器位的方法。存储器件包括插在上电极和下电极之间的钙钛矿材料的有源层。位于上电极和下电极的交叉点处的有源层内的位区域具有响应于一个或多个电压脉冲的施加而可以在一定范围内变化的电阻率。可以使用电压脉冲来增加比特区域的电阻率，降低比特区域的电阻率，或者确定比特区域的电阻率。提供存储器电路以帮助编程和读出位区域。

74. 发明授权

US06972211B2 Method of fabricating trench isolated cross-point memory array 有权
标题翻译：制造沟槽隔离交叉点存储器阵列的方法
公开(公告)号：US06972211B2
公开(公告)日：2005-12-06
申请号：US10971263
申请日：2004-10-21
申请人： Sheng Teng Hsu , Wei Pan , Wei-Wei Zhuang
发明人： Sheng Teng Hsu , Wei Pan , Wei-Wei Zhuang
IPC分类号： G11C11/15 , G11C11/56 , G11C13/00 , H01L27/24 , H10L21/00 , H10L21/20 , H10L21/3205 , H10L21/8222
CPC分类号： G11C11/15 , G11C11/5685 , G11C13/0007 , G11C13/004 , G11C2213/31 , G11C2213/72 , G11C2213/77 , H01L27/24
摘要： Resistive cross-point memory devices are provided, along with methods of manufacture and use. The memory devices are comprised by an active layer of resistive memory material interposed between upper electrodes and lower electrodes. A bit region located within the resistive memory material at the cross-point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. A diode is formed between at the interface between the resistive memory material and the lower electrodes, which may be formed as doped regions, isolated from each other by shallow trench isolation. The resistive cross-point memory device is formed by doping lines, which are separated from each other by shallow trench isolation, within a substrate one polarity, and then doping regions of the lines the opposite polarity to form diodes. Bottom electrodes are then formed over the diodes with a layer of resistive memory material overlying the bottom electrodes. Top electrodes may then be added at an angled to form a cross-point array defined by the lines and the top electrodes.
摘要翻译：提供了电阻式交叉点存储器件，以及制造和使用方法。存储器件由介于上电极和下电极之间的电阻存储器材料的有源层组成。在上电极和下电极的交叉点处位于电阻性存储器材料内的位区域具有响应于施加一个或更多个电压脉冲而能够在一定范围内变化的电阻率。可以使用电压脉冲来增加比特区域的电阻率，降低比特区域的电阻率，或者确定比特区域的电阻率。在电阻性存储器材料和下部电极之间的界面处形成二极管，其可以形成为通过浅沟槽隔离彼此隔离的掺杂区域。电阻交叉点存储器件通过在衬底内通过浅沟槽隔离彼此分离的线路形成一个极性，然后将相反极性的线的掺杂区域形成二极管来形成。然后在二极管上形成一层电阻记忆材料覆盖底部电极的底部电极。然后可以以倾斜的角度添加顶部电极以形成由线和顶部电极限定的交叉点阵列。

75. 发明授权

US06940113B2 Trench isolated cross-point memory array 有权
标题翻译：沟槽隔离交叉点存储器阵列
公开(公告)号：US06940113B2
公开(公告)日：2005-09-06
申请号：US10971203
申请日：2004-10-21
申请人： Sheng Teng Hsu , Wei Pan , Wei-Wei Zhuang
发明人： Sheng Teng Hsu , Wei Pan , Wei-Wei Zhuang
IPC分类号： G11C11/15 , G11C11/56 , G11C13/00 , H01L27/24 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： G11C11/15 , G11C11/5685 , G11C13/0007 , G11C13/004 , G11C2213/31 , G11C2213/72 , G11C2213/77 , H01L27/24
摘要： Resistive cross-point memory devices are provided, along with methods of manufacture and use. The memory devices are comprised by an active layer of resistive memory material interposed between upper electrodes and lower electrodes. A bit region located within the resistive memory material at the cross-point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. A diode is formed between at the interface between the resistive memory material and the lower electrodes, which may be formed as doped regions, isolated from each other by shallow trench isolation. The resistive cross-point memory device is formed by doping lines, which are separated from each other by shallow trench isolation, within a substrate one polarity, and then doping regions of the lines the opposite polarity to form diodes. Bottom electrodes are then formed over the diodes with a layer of resistive memory material overlying the bottom electrodes. Top electrodes may then be added at an angled to form a cross-point array defined by the lines and the top electrodes.
摘要翻译：提供了电阻式交叉点存储器件，以及制造和使用方法。存储器件由介于上电极和下电极之间的电阻存储器材料的有源层组成。在上电极和下电极的交叉点处位于电阻性存储器材料内的位区域具有响应于施加一个或更多个电压脉冲而能够在一定范围内变化的电阻率。可以使用电压脉冲来增加比特区域的电阻率，降低比特区域的电阻率，或者确定比特区域的电阻率。在电阻性存储器材料和下部电极之间的界面处形成二极管，其可以形成为通过浅沟槽隔离彼此隔离的掺杂区域。电阻交叉点存储器件通过在衬底内通过浅沟槽隔离彼此分离的线路形成一个极性，然后将相反极性的线的掺杂区域形成二极管来形成。然后在二极管上形成一层电阻记忆材料覆盖底部电极的底部电极。然后可以以倾斜的角度添加顶部电极以形成由线和顶部电极限定的交叉点阵列。

76. 发明授权

US06939724B2 Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer 有权
公开(公告)号：US06939724B2
公开(公告)日：2005-09-06
申请号：US10640770
申请日：2003-08-13
申请人： Wei-Wei Zhuang , Tingkai Li , David R. Evans , Sheng Teng Hsu , Wei Pan
发明人： Wei-Wei Zhuang , Tingkai Li , David R. Evans , Sheng Teng Hsu , Wei Pan
IPC分类号： H01L27/04 , H01L21/20 , H01L21/822 , H01L45/00 , H01L21/00
CPC分类号： G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1608
摘要： A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer includes depositing, by MOCVD, a seed layer of PCMO, in highly crystalline form, thin film, having a thickness of between about 50 Å to 300 Å, depositing a second PCMO thin film layer on the seed layer, by spin coating, having a thickness of between about 500 Å to 3000 Å, to form a combined PCMO layer; increasing the resistance of the combined PCMO film in a semiconductor device by applying a negative electric pulse of between about −4V to −5V, having a pulse width of between about 75 nsec to 1 μsec; and decreasing the resistance of the combined PCMO layer in a semiconductor device by applying a positive electric pulse of between about +2.5V to +4V, having a pulse width greater than 2.0 μsec.

77. 发明授权

US06876521B2 Method of making a solid state inductor 失效
标题翻译：制作固态电感的方法
公开(公告)号：US06876521B2
公开(公告)日：2005-04-05
申请号：US10705066
申请日：2003-11-10
申请人： Wei Pan , Sheng Teng Hsu , Wei-Wei Zhuang
发明人： Wei Pan , Sheng Teng Hsu , Wei-Wei Zhuang
IPC分类号： H01F10/193 , H01F21/00 , H01F41/24 , H01L21/02 , H01L27/08 , H01F5/00 , G11B5/127
CPC分类号： G11C13/0007 , G11C2213/31 , H01F10/193 , H01F21/00 , H01F41/24 , H01L27/08 , H01L28/10 , Y10T29/4902
摘要： A solid-state inductor and a method for forming a solid-state inductor are provided. The method comprises: forming a bottom electrode; forming a colossal magnetoresistance (CMR) thin film overlying the bottom electrode; forming a top electrode overlying the CMR thin film; applying an electrical field treatment to the CMR thin film in the range of 0.4 to 1 megavolts per centimeter (MV/cm) with a pulse width in the range of 100 nanoseconds (ns) to 1 millisecond (ms); in response to the electrical field treatment, converting the CMR thin film into a CMR thin film inductor; applying a bias voltage between the top and bottom electrodes; and, in response to the applied bias voltage, creating an inductance between the top and bottom electrodes. When the applied bias voltage is varied, the inductance varies in response.
摘要翻译：提供固态电感器和形成固态电感器的方法。该方法包括：形成底部电极; 形成覆盖底部电极的巨大磁阻（CMR）薄膜; 形成覆盖CMR薄膜的顶部电极; 以0.1纳秒（ns）至1毫秒（ms）的脉冲宽度在0.4至1兆伏特/厘米（MV / cm）范围内对CMR薄膜进行电场处理; 响应于电场处理，将CMR薄膜转换成CMR薄膜电感器; 在顶部和底部电极之间施加偏置电压; 并且响应于施加的偏置电压，在顶部和底部电极之间产生电感。当施加的偏置电压变化时，电感响应变化。

78. 发明授权

US06764537B2 Copper metal precursor 失效
标题翻译：铜金属前体
公开(公告)号：US06764537B2
公开(公告)日：2004-07-20
申请号：US10453829
申请日：2003-06-02
申请人： Wei-Wei Zhuang , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： C23C1618
CPC分类号： H01L21/28556 , C23C16/18
摘要： A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.
摘要翻译：铜基金属薄膜在基板上进行化学气相沉积的方法包括在化学气相沉积室中加热要沉积铜金属薄膜的基板; 蒸发含有铜金属的前体，其中前体是（α-甲基苯乙烯）Cu（I）（hfac）的化合物，其中hfac是六氟乙酰丙酮化物，和（hfac）Cu（I）L，其中L是烯烃; 将蒸发的前体引入与加热的基底相邻的化学气相沉积室; 并将蒸发的前体冷凝到基底上，从而将铜金属沉积到基底上。用于铜金属薄膜的化学气相沉积的铜金属前体是（α-甲基苯乙烯）Cu（I）（hfac）的化合物，其中hfac是六氟乙酰丙酮化物，和（hfac）Cu（I）L，其中 L是从由1-戊烯，1-己烯和三甲基乙烯基硅烷组成的烯烃族中获得的烯烃。

79. 发明授权

US06673691B2 Method for resistance switch using short electric pulses 有权
标题翻译：使用短脉冲电阻开关的方法
公开(公告)号：US06673691B2
公开(公告)日：2004-01-06
申请号：US10256358
申请日：2002-09-26
申请人： Wei-Wei Zhuang , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Sheng Teng Hsu
IPC分类号： G11C1100
CPC分类号： H01L27/101 , G11C11/5685 , G11C13/0007 , G11C2213/31 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1641 , Y10S502/525
摘要： A method of changing the resistance of a perovskite metal oxide thin film device with a resistance-change-producing pulse includes changing the resistance of the device by varying the duration of a resistance-change-producing pulse.
摘要翻译：通过电阻变化产生脉冲改变钙钛矿金属氧化物薄膜器件的电阻的方法包括通过改变电阻变化产生脉冲的持续时间来改变器件的电阻。

80. 发明授权

US06660628B1 Method of MOCVD Ti-based barrier metal thin films with tetrakis (methylethylamino) titanium with octane 有权
标题翻译：具有四（甲基乙基氨基）钛与辛烷的MOCVD Ti基阻挡金属薄膜的方法
公开(公告)号：US06660628B1
公开(公告)日：2003-12-09
申请号：US10391291
申请日：2003-03-17
申请人： Wei Pan , Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
发明人： Wei Pan , Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/28556 , H01L21/76856
摘要： A method of forming a titanium-based barrier metal layer includes preparing a substrate, including forming IC elements on the substrate; forming a titanium-based barrier metal precursor using a solution of about 5% by volume tetrakis (methylethylamino) titanium (TMEAT) and about 95% by volume octane; and depositing a titanium-based barrier layer on the substrate by MOCVD.
摘要翻译：形成钛基阻挡金属层的方法包括制备基板，包括在基板上形成IC元件; 使用约5体积％四（甲基乙基氨基）钛（TMEAT）和约95体积％辛烷的溶液形成钛基阻隔金属前体; 以及通过MOCVD在基板上沉积钛基阻挡层。

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