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2. 发明授权

US06972211B2 Method of fabricating trench isolated cross-point memory array 有权
标题翻译：制造沟槽隔离交叉点存储器阵列的方法
公开(公告)号：US06972211B2
公开(公告)日：2005-12-06
申请号：US10971263
申请日：2004-10-21
申请人： Sheng Teng Hsu , Wei Pan , Wei-Wei Zhuang
发明人： Sheng Teng Hsu , Wei Pan , Wei-Wei Zhuang
IPC分类号： G11C11/15 , G11C11/56 , G11C13/00 , H01L27/24 , H10L21/00 , H10L21/20 , H10L21/3205 , H10L21/8222
CPC分类号： G11C11/15 , G11C11/5685 , G11C13/0007 , G11C13/004 , G11C2213/31 , G11C2213/72 , G11C2213/77 , H01L27/24
摘要： Resistive cross-point memory devices are provided, along with methods of manufacture and use. The memory devices are comprised by an active layer of resistive memory material interposed between upper electrodes and lower electrodes. A bit region located within the resistive memory material at the cross-point of an upper electrode and a lower electrode has a resistivity that can change through a range of values in response to application of one, or more, voltage pulses. Voltage pulses may be used to increase the resistivity of the bit region, decrease the resistivity of the bit region, or determine the resistivity of the bit region. A diode is formed between at the interface between the resistive memory material and the lower electrodes, which may be formed as doped regions, isolated from each other by shallow trench isolation. The resistive cross-point memory device is formed by doping lines, which are separated from each other by shallow trench isolation, within a substrate one polarity, and then doping regions of the lines the opposite polarity to form diodes. Bottom electrodes are then formed over the diodes with a layer of resistive memory material overlying the bottom electrodes. Top electrodes may then be added at an angled to form a cross-point array defined by the lines and the top electrodes.
摘要翻译：提供了电阻式交叉点存储器件，以及制造和使用方法。存储器件由介于上电极和下电极之间的电阻存储器材料的有源层组成。在上电极和下电极的交叉点处位于电阻性存储器材料内的位区域具有响应于施加一个或更多个电压脉冲而能够在一定范围内变化的电阻率。可以使用电压脉冲来增加比特区域的电阻率，降低比特区域的电阻率，或者确定比特区域的电阻率。在电阻性存储器材料和下部电极之间的界面处形成二极管，其可以形成为通过浅沟槽隔离彼此隔离的掺杂区域。电阻交叉点存储器件通过在衬底内通过浅沟槽隔离彼此分离的线路形成一个极性，然后将相反极性的线的掺杂区域形成二极管来形成。然后在二极管上形成一层电阻记忆材料覆盖底部电极的底部电极。然后可以以倾斜的角度添加顶部电极以形成由线和顶部电极限定的交叉点阵列。

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