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1. 发明授权

US5994571A Substituted ethylene precursor and synthesis method 有权
标题翻译：取代乙烯前体及其合成方法
公开(公告)号：US5994571A
公开(公告)日：1999-11-30
申请号：US215921
申请日：1998-12-18
申请人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David Russell Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David Russell Evans , Sheng Teng Hsu
IPC分类号： C07C11/04 , C07F1/08 , C07F1/10 , C07F15/00 , C23C16/18 , H01L21/285 , C23C16/00
CPC分类号： C23C16/18 , C07F1/08
摘要： A Cu(hfac) precursor with a substituted ethylene ligand has been provided. The substituted ethylene ligand includes bonds to molecules selected from the group consisting of C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, H, and C.sub.1 to C.sub.8 alkoxyl. One variation, the 2-methyl-1-butene ligand precursor has proved to be stable at room temperature, and extremely volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. Because of the volatility, the deposition rate of copper deposited with this precursor is very high. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译：已经提供了具有取代的乙烯配体的Cu（hfac）前体。取代的乙烯配体包括与选自C1至C8烷基，C1至C8卤代烷基，H和C1至C8烷氧基的分子的键。一个变体，2-甲基-1-丁烯配体前体已被证明在室温下是稳定的，并且在较高温度下极易挥发。沉积有该前体的铜具有低电阻率和高粘合特性。由于挥发性，沉积有这种前体的铜的沉积速率非常高。已经提供了产生高产率的上述前体的合成方法。

2. 发明授权

US06281377B1 Substituted cycloalkene new copper precursors for chemical vapor deposition of copper metal thin films 有权
标题翻译：用于铜金属薄膜化学气相沉积的取代的环烯烃新铜前体
公开(公告)号：US06281377B1
公开(公告)日：2001-08-28
申请号：US09502425
申请日：2000-02-11
申请人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07F1/08
摘要： A method of forming a volatile copper precursor for chemical vapor deposition of copper metal thin film includes formation of a volatile liquid having a chemical formula of (n-R-m-cyclohexene)Cu(I)(hfac) or (n-R-m-cyclopentene)Cu(I)(hfac), where n,m=1-6, and where R is a alkyl, such as methyl and ethyl.
摘要翻译：形成铜金属薄膜的化学气相沉积挥发性铜前体的方法包括形成化学式为（nRm-环己烯）Cu（I）（hfac）或（nRm-环戊烯）Cu（I）的挥发性液体，（hfac），其中n，m = 1-6，其中R是烷基，例如甲基和乙基。

3. 发明授权

US06669870B2 Substituted phenylethylene precursor synthesis method 失效
标题翻译：取代苯乙烯前体合成方法
公开(公告)号：US06669870B2
公开(公告)日：2003-12-30
申请号：US09820024
申请日：2001-03-28
申请人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： H01B102
CPC分类号： C23C16/18
摘要： A Cu(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译：已经提供了具有取代的苯基乙炔配体的Cu（hfac）前体。取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。沉积有该前体的铜具有低电阻率和高粘合特性。已经提供了产生高产率的上述前体的合成方法。

4. 发明授权

US06245261B1 Substituted phenylethylene precursor and synthesis method 有权
标题翻译：取代苯乙烯前体及其合成方法
公开(公告)号：US06245261B1
公开(公告)日：2001-06-12
申请号：US09210099
申请日：1998-12-11
申请人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： H01B102
CPC分类号： C23C16/18
摘要： A Cub(hfac) precursor with a substituted phenylethylene ligand has been provided. The substituted phenylethylene ligand includes bonds to molecules selected from the group consisting of C1 to C6 alkyl, C1 to C6 haloalkyl, C1 to C6 phenyl, H and C1 to C6 alkoxyl. One variation, the &agr;-methylstyrene ligand precursor has proved to be stable a low temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursor.
摘要翻译：已经提供了具有取代的苯基乙炔配体的Cub（hfac）前体。取代的苯基乙炔配体包括与选自C1至C6烷基，C1至C6卤代烷基，C1至C6苯基，H和C1至C6烷氧基的分子的键。已经证明α-甲基苯乙烯配体前体的一个变化是在低温下是稳定的，并且在较高温度下具有足够的挥发性。沉积有该前体的铜具有低电阻率和高粘合特性。已经提供了产生高产率的上述前体的合成方法。

5. 发明授权

US6015918A Allyl-derived precursor and synthesis method 有权
标题翻译：烯丙基衍生的前体和合成方法
公开(公告)号：US6015918A
公开(公告)日：2000-01-18
申请号：US281731
申请日：1999-03-30
申请人： Wei-Wei Zhuang , Tue Nguyen , Greg Michael Stecker , David Russell Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Greg Michael Stecker , David Russell Evans , Sheng Teng Hsu
IPC分类号： C07F1/00 , C07F1/08 , C07F7/08 , C23C16/18 , C07F1/10
CPC分类号： C23C16/18 , C07F1/08 , C07F7/082
摘要： A Cu(hfac) allyl-derived ligand precursor has been provided. The ligand includes group consisting of alkyl, phenyl, trialkylsilane, trialkoxylsilane, halodialkylsilane, dihaloalkylsilane, trihalosilane, triphenylsilane, alkoxyl, halogen, chloroformate, cynanide, cycloalkyl, cycloalkylamine, alkyl ether, isocyanate, and pentafluorobenzene. Examples of the allyl-derived ligand precursors have proved to be stable at room temperatures, and sufficiently volatile at higher temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described precursors, including a Cu(hfac)(allyltrimethylsilane) precursor.
摘要翻译：已经提供了一种Cu（hfac）烯丙基衍生的配体前体。配体包括由烷基，苯基，三烷基硅烷，三烷氧基硅烷，卤代烷基硅烷，二卤代烷基硅烷，三卤硅烷，三苯基硅烷，烷氧基，卤素，氯甲酸酯，环己烷，环烷基，环烷基胺，烷基醚，异氰酸酯和五氟苯组成的组。已经证明烯丙基衍生的配体前体的实例在室温下是稳定的，并且在较高温度下具有足够的挥发性。沉积有该前体的铜具有低电阻率和高粘合特性。已经提供了产生高产率的上述前体，包括Cu（hfac）（烯丙基三甲基硅烷）前体的合成方法。

6. 发明授权

US6090963A Alkene ligand precursor and synthesis method 有权
标题翻译：烯配体前体和合成方法
公开(公告)号：US6090963A
公开(公告)日：2000-07-18
申请号：US281722
申请日：1999-03-30
申请人： Wei-Wei Zhuang , Tue Nguyen , Robert Barrowcliff , David Russell Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Tue Nguyen , Robert Barrowcliff , David Russell Evans , Sheng Teng Hsu
IPC分类号： C07C11/02 , C07C49/92 , C07F1/08 , C23C16/18
CPC分类号： C23C16/18
摘要： A metal(hfac), alkene ligand precursor has been provided. The alkene ligand includes double bonded carbon atoms, with first and second bonds to the first carbon atom, and third and fourth bonds to the second carbon atom. The first, second, third, and fourth bonds are selected from a the group consisting of H, C.sub.1 to C.sub.8 alkyl, C.sub.1 to C.sub.8 haloalkyl, and C.sub.1 to C.sub.8 alkoxyl. As a general class, these precursors are capable of high metal deposition rates and high volatility, despite being stable in the liquid phase at low temperatures. Copper deposited with this precursor has low resistivity and high adhesive characteristics. A synthesis method has been provided which produces a high yield of the above-described alkene ligand class of metal precursors.
摘要翻译：已经提供了金属（hfac），烯烃配体前体。烯属配体包括双键键合的碳原子，与第一个碳原子具有第一个和第二个键，第三个和第四个键连接到第二个碳原子。第一，第二，第三和第四键选自H，C 1至C 8烷基，C 1至C 8卤代烷基和C 1至C 8烷氧基。作为一般类别，尽管在低温下在液相中稳定，但这些前体能够具有高的金属沉积速率和高挥发性。沉积有该前体的铜具有低电阻率和高粘合特性。已经提供了产生上述烯属配体类金属前体的高产率的合成方法。

7. 发明授权

US07235407B2 System and method for forming a bipolar switching PCMO film 有权
标题翻译：用于形成双极开关PCMO膜的系统和方法
公开(公告)号：US07235407B2
公开(公告)日：2007-06-26
申请号：US10855942
申请日：2004-05-27
申请人： Tingkai Li , Lawrence J. Charneski , Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
发明人： Tingkai Li , Lawrence J. Charneski , Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L21/00
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1616
摘要： A multi-layer PrxCa1-xMnO3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and, forming top electrode overlying the PCMO film. If the polycrystalline layers are deposited overlying the nanocrystalline layers, a high resistance can be written with narrow pulse width, negative voltage pulses. The PCMO film can be reset to a low resistance using a narrow pulse width, positive amplitude pulse. Likewise, if the nanocrystalline layers are deposited overlying the polycrystalline layers, a high resistance can be written with narrow pulse width, positive voltage pulses, and reset to a low resistance using a narrow pulse width, negative amplitude pulse.
摘要翻译：提供了多层Pr 1 x 1 x x MnO 3（PCMO）薄膜电容器和相关的沉积方法，用于形成双极开关薄膜。该方法包括：形成底部电极; 沉积纳米晶体PCMO层; 沉积多晶的PCMO层; 形成具有双极开关特性的多层PCMO膜; 并且形成覆盖PCMO膜的顶部电极。如果多晶层沉积在纳米晶层之上，则可以用窄脉冲宽度，负电压脉冲写入高电阻。 PCMO膜可以使用窄脉冲宽度，正幅度脉冲复位为低电阻。同样，如果纳米晶层沉积在多晶层上，则可以用窄脉冲宽度，正电压脉冲写入高电阻，并使用窄脉冲宽度，负幅度脉冲将其复位为低电阻。

8. 发明授权

US06764537B2 Copper metal precursor 失效
标题翻译：铜金属前体
公开(公告)号：US06764537B2
公开(公告)日：2004-07-20
申请号：US10453829
申请日：2003-06-02
申请人： Wei-Wei Zhuang , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Wei-Wei Zhuang , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： C23C1618
CPC分类号： H01L21/28556 , C23C16/18
摘要： A method for chemical vapor deposition of copper metal thin film on a substrate includes heating a substrate onto which the copper metal thin film is to be deposited in a chemical vapor deposition chamber; vaporizing a precursor containing the copper metal, wherein the precursor is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene; introducing the vaporized precursor into the chemical vapor deposition chamber adjacent the heated substrate; and condensing the vaporized precursor onto the substrate thereby depositing copper metal onto the substrate. A copper metal precursor for use in the chemical vapor deposition of a copper metal thin film is a compound of (&agr;-methylstyrene)Cu(I)(hfac), where hfac is hexafluoroacetylacetonate, and (hfac)Cu(I)L, where L is an alkene taken from the group of alkenes consisting of 1-pentene, 1-hexene and trimethylvinylsilane.
摘要翻译：铜基金属薄膜在基板上进行化学气相沉积的方法包括在化学气相沉积室中加热要沉积铜金属薄膜的基板; 蒸发含有铜金属的前体，其中前体是（α-甲基苯乙烯）Cu（I）（hfac）的化合物，其中hfac是六氟乙酰丙酮化物，和（hfac）Cu（I）L，其中L是烯烃; 将蒸发的前体引入与加热的基底相邻的化学气相沉积室; 并将蒸发的前体冷凝到基底上，从而将铜金属沉积到基底上。用于铜金属薄膜的化学气相沉积的铜金属前体是（α-甲基苯乙烯）Cu（I）（hfac）的化合物，其中hfac是六氟乙酰丙酮化物，和（hfac）Cu（I）L，其中 L是从由1-戊烯，1-己烯和三甲基乙烯基硅烷组成的烯烃族中获得的烯烃。

9. 发明授权

US07696550B2 Bipolar switching PCMO capacitor 有权
标题翻译：双极开关PCMO电容
公开(公告)号：US07696550B2
公开(公告)日：2010-04-13
申请号：US11805177
申请日：2007-05-22
申请人： Tingkai Li , Lawrence J. Charneski , Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
发明人： Tingkai Li , Lawrence J. Charneski , Wei-Wei Zhuang , David R. Evans , Sheng Teng Hsu
IPC分类号： H01L29/76
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1616
摘要： A multi-layer PrxCa1-xMnO3 (PCMO) thin film capacitor and associated deposition method are provided for forming a bipolar switching thin film. The method comprises: forming a bottom electrode; depositing a nanocrystalline PCMO layer; depositing a polycrystalline PCMO layer; forming a multi-layer PCMO film with bipolar switching properties; and, forming top electrode overlying the PCMO film. If the polycrystalline layers are deposited overlying the nanocrystalline layers, a high resistance can be written with narrow pulse width, negative voltage pulses. The PCMO film can be reset to a low resistance using a narrow pulse width, positive amplitude pulse. Likewise, if the nanocrystalline layers are deposited overlying the polycrystalline layers, a high resistance can be written with narrow pulse width, positive voltage pulses, and reset to a low resistance using a narrow pulse width, negative amplitude pulse.
摘要翻译：提供多层PrxCa1-xMnO3（PCMO）薄膜电容器和相关的沉积方法用于形成双极开关薄膜。该方法包括：形成底部电极; 沉积纳米晶体PCMO层; 沉积多晶PCMO层; 形成具有双极开关特性的多层PCMO膜; 并且形成覆盖PCMO膜的顶部电极。如果多晶层沉积在纳米晶层之上，则可以用窄脉冲宽度，负电压脉冲写入高电阻。 PCMO膜可以使用窄脉冲宽度，正幅度脉冲复位为低电阻。同样，如果纳米晶层沉积在多晶层上，则可以用窄脉冲宽度，正电压脉冲写入高电阻，并使用窄脉冲宽度，负幅度脉冲将其复位为低电阻。

10. 发明授权

US06972239B1 Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin films 有权
标题翻译：用于制造PrXCa1-xMnO3薄膜的低温MOCVD工艺
公开(公告)号：US06972239B1
公开(公告)日：2005-12-06
申请号：US10923529
申请日：2004-08-20
申请人： Tingkai Li , Wei-Wei Zhuang , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
发明人： Tingkai Li , Wei-Wei Zhuang , Lawrence J. Charneski , David R. Evans , Sheng Teng Hsu
IPC分类号： C23C16/40 , H01L21/20 , H01L45/00
CPC分类号： H01L45/1616 , C23C16/40 , H01L45/04 , H01L45/1233 , H01L45/147
摘要： A method of fabricating a PCMO thin film at low temperature for use in a RRAM device includes preparing a PCMO precursor; preparing a substrate; placing the substrate into a MOCVD chamber; introducing the PCMO precursor into the MOCVD chamber to deposit a PCMO thin film on the substrate; maintaining a MOCVD vaporizer at between about 240° C. to 280° C. and maintaining the MOCVD chamber at a temperature of between about 300° C. to 400° C.; removing the PCMO thin-film bearing substrate from the MOCVD chamber; and completing the RRAM device.
摘要翻译：在低温下制造用于RRAM器件的PCMO薄膜的方法包括制备PCMO前体; 制备底物; 将基板放置在MOCVD室中; 将PCMO前体引入MOCVD室以在衬底上沉积PCMO薄膜; 将MOCVD蒸发器保持在约240℃至280℃之间并将MOCVD室保持在约300℃至400℃之间的温度下; 从MOCVD室中取出PCMO薄膜轴承衬底; 并完成RRAM设备。

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