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    • 71. 发明授权
    • Apparatus and method for plating semiconductor wafers
    • 用于电镀半导体晶片的装置和方法
    • US07645364B2
    • 2010-01-12
    • US10882712
    • 2004-06-30
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • Yezdi N. DordiFred C. RedekerJohn M. BoydRobert MaraschinCarl Woods
    • C25D21/00
    • C25D17/14C25D5/06C25D7/123C25D17/001C25D21/12H01L21/2885
    • An electroplating apparatus for electroplating a surface of a wafer is provided. The wafer is capable of being electrically charged as a cathode. The electroplating apparatus includes a plating head capable of being positioned either over or under the surface of a wafer and capable of being electrically charged as an anode. The plating head is capable of enabling metallic plating between the surface of the wafer and the plating head when the wafer and plating head are charged. The plating head further comprises a voltage sensor pair capable of sensing a voltage present between the plating head and the surface of the wafer, and a controller capable of receiving data from the voltage sensor pair. The data received from the voltage sensor pair is used by the controller to maintain a substantially constant voltage to be applied by the anode when the plating head is placed in positions over the surface of the wafer. A method of electroplating a wafer is also provided.
    • 提供了一种用于电镀晶片表面的电镀设备。 该晶片能够作为阴极充电。 电镀装置包括能够位于晶片表面的上方或下方并能够作为阳极带电的电镀头。 当晶片和电镀头被充电时,电镀头能够在晶片表面和电镀头之间实现金属电镀。 电镀头还包括能够感测电镀头和晶片表面之间的电压的电压传感器对,以及能够从电压传感器对接收数据的控制器。 当电镀头位于晶片表面上方时,由电压传感器对接收的数据由控制器使用以保持由阳极施加的基本上恒定的电压。 还提供了一种电镀晶片的方法。