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1. 发明授权

US07108591B1 Compliant wafer chuck 失效
标题翻译：符合晶圆卡盘
公开(公告)号：US07108591B1
公开(公告)日：2006-09-19
申请号：US10816418
申请日：2004-03-31
申请人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
发明人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
IPC分类号： B24B5/02 , B24B7/04 , B24B1/00
CPC分类号： B24B37/30
摘要： A semiconductor substrate support is provided. The semiconductor substrate support includes a chuck configured to change between a compliant state and a rigid state. An electromagnetic field source configured to apply an electromagnetic field to the chuck is included. The electromagnetic field causes the chuck to change from the compliant state to the rigid state. A method for supporting a semiconductor substrate and a system for cleaning a substrate and an apparatus are also provided.
摘要翻译：提供半导体衬底支撑。半导体衬底支撑件包括构造成在柔顺状态和刚性状态之间变化的卡盘。包括被配置为向卡盘施加电磁场的电磁场源。电磁场使卡盘从顺从状态转变为刚性状态。还提供了一种用于支撑半导体衬底的方法和用于清洁衬底和装置的系统。

2. 发明授权

US07252736B1 Compliant grinding wheel 有权
标题翻译：合格砂轮
公开(公告)号：US07252736B1
公开(公告)日：2007-08-07
申请号：US10816504
申请日：2004-03-31
申请人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
发明人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
IPC分类号： B24B1/00 , B24B5/02
CPC分类号： B24B7/228 , B24D13/142
摘要： A pre-planarization module configured to perform a long range planarization operation is provided. The pre-planarization module includes a semiconductor substrate support configured to rotate about a first axis. The pre-planarization module also includes an annular ring having a first side with a compliant layer affixed thereto. The second side of the compliant layer is affixed to a planarizing surface. The annular ring is configured to move perpendicular and parallel to a plane associated with the substrate support. Additionally, the annular ring is configured to rotate about a second axis, where the second axis is offset from the first axis. The substrate support and the annular ring rotate in the same direction. A method for performing a planarization process and a substrate grinding device are also provided.
摘要翻译：提供了一种配置成执行长距离平面化操作的预平面化模块。预平坦化模块包括构造成围绕第一轴线旋转的半导体衬底支撑件。预平坦化模块还包括环形环，其具有固定到其上的柔性层的第一侧。柔性层的第二面固定在平坦化表面上。环形环被配置为垂直并平行于与衬底支撑件相关联的平面移动。另外，环形环被构造成围绕第二轴线旋转，其中第二轴线从第一轴线偏移。基板支撑件和环形圈沿相同的方向旋转。还提供了一种用于执行平面化处理的方法和基板研磨装置。

3. 发明授权

US07090562B1 Methods of and apparatus for pre-planarizing a substrate 有权
标题翻译：预处理基板的方法和装置
公开(公告)号：US07090562B1
公开(公告)日：2006-08-15
申请号：US11217910
申请日：2005-08-31
申请人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
发明人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
IPC分类号： B24D17/00
CPC分类号： B24B7/228
摘要： Methods and apparatus are provided to provide a substantially uniform layer thickness above a wafer contour as the wafer rotates and is traversed past a pre-planarization tool. The tool has a shank defining an axis of rotation, and a planarization member coupled to the shank has a hook-shaped section supporting a pre-planarization surface spaced by an at-rest-distance from the axis of during an at-rest condition of the shank. The hook-shaped section has a modulus of elasticity selected so that upon rotation, the hook-shaped section flexes and moves the pre-planarization surface to rotation-distances spaced from the axis in response to a velocity of rotation of the hook-shaped section around the axis in a range of velocities. As the tool rotates, metrology intermittently directly senses the layer thickness and controls the velocity of rotation so the rotation-distances have values in excess of a value of the at-rest-distance.
摘要翻译：提供了方法和装置，以便当晶片旋转并且穿过预平面化工具时，在晶片轮廓上方提供基本上均匀的层厚度。该工具具有限定旋转轴线的柄，并且联接到柄的平坦化构件具有钩形部分，该钩状部分支撑预平坦化表面，该预平面化表面与在静止状态期间与轴的静止距离间隔开小腿钩形部分具有选择的弹性模量，使得在旋转时，响应于钩形部分的旋转速度，钩形部分将预平坦化表面弯曲并移动到与轴线间隔开的旋转距离围绕轴线在一定范围的速度。当工具旋转时，计量学间歇地直接感知层厚度并控制旋转速度，因此旋转距离具有超过静止距离值的值。

4. 发明授权

US08403727B1 Pre-planarization system and method 有权
标题翻译：预平面化系统和方法
公开(公告)号：US08403727B1
公开(公告)日：2013-03-26
申请号：US10816417
申请日：2004-03-31
申请人： Fred C. Redeker , John M. Boyd , Yezdi Dordi , Sabir A. Majumder , Simon McClatchie
发明人： Fred C. Redeker , John M. Boyd , Yezdi Dordi , Sabir A. Majumder , Simon McClatchie
IPC分类号： B24B1/00 , B24B7/19 , B24B7/30
CPC分类号： H01L21/32115 , B24B37/042 , B24B37/107 , B24B37/11 , B24D7/06 , H01L21/68785
摘要： A method for producing a normalized surface on a substrate for a chemical mechanical planarization process is provided. The method initiates with grinding a surface of the substrate with a first surface associated with a first planarization length. The method includes planarizing the surface of the substrate with a second surface associated with a second planarization length. Here, the second planarization length being less than the first planarization length. A system for processing a semiconductor substrate is also provided.
摘要翻译：提供了一种用于在化学机械平面化处理用基板上制造标准化表面的方法。该方法通过用与第一平坦化长度相关联的第一表面研磨衬底的表面来启动。该方法包括用与第二平坦化长度相关联的第二表面平坦化衬底的表面。这里，第二平坦化长度小于第一平坦化长度。还提供了一种用于处理半导体衬底的系统。

5. 发明授权

US07875554B2 Method for electroless depositing a material on a surface of a wafer 有权
标题翻译：在晶片的表面上无电沉积材料的方法
公开(公告)号：US07875554B2
公开(公告)日：2011-01-25
申请号：US12044537
申请日：2008-03-07
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

6. 发明授权

US07358186B2 Method and apparatus for material deposition in semiconductor fabrication 有权
标题翻译：在半导体制造中材料沉积的方法和装置
公开(公告)号：US07358186B2
公开(公告)日：2008-04-15
申请号：US10735216
申请日：2003-12-12
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： H01L21/44 , B05C5/12
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

7. 发明授权

US08490573B2 Method and apparatus for material deposition 有权
标题翻译：材料沉积的方法和装置
公开(公告)号：US08490573B2
公开(公告)日：2013-07-23
申请号：US12968114
申请日：2010-12-14
申请人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
发明人： Yezdi Dordi , John Boyd , William Thie , Bob Maraschin , Fred C. Redeker , Joel M. Cook
IPC分类号： B05C3/02 , B05D1/18
CPC分类号： C23C18/1612 , C23C18/14 , C23C18/161 , C23C18/1619 , C23C18/1651 , C23C18/1667 , C23C18/168 , C23C18/31 , H01L21/288
摘要： Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
摘要翻译：概括地说，提供了一种在半导体晶片（“晶片”）上沉积材料的方法和装置。更具体地，该方法和装置提供了暴露于化学镀溶液的晶片的表面的选择性加热。通过向晶片表面施加辐射能来提供选择性加热。晶片表面的选择性加热导致晶片表面和化学镀溶液之间的界面处的温度升高。界面处的温度升高又导致在晶片表面发生电镀反应。因此，通过化学镀反应将材料沉积在晶片表面上，该电镀反应通过使用适当限定的辐射能源改变晶片表面的温度来启动和控制。

8. 发明申请

US20100170803A1 Method and Apparatus for Plating Semiconductor Wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US20100170803A1
公开(公告)日：2010-07-08
申请号：US12724379
申请日：2010-03-15
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D7/12
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

9. 发明授权

US07704367B2 Method and apparatus for plating semiconductor wafers 有权
标题翻译：用于电镀半导体晶片的方法和装置
公开(公告)号：US07704367B2
公开(公告)日：2010-04-27
申请号：US10879263
申请日：2004-06-28
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker , Carl Woods
IPC分类号： C25D7/12 , H01L21/288 , B23H7/26 , C25B11/00
CPC分类号： C25D17/14 , C25D5/06 , C25D7/123 , C25D17/001 , C25D17/12 , H01L21/2885
摘要： First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
摘要翻译：第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处，其中第一和第二位置相对于晶片支撑件彼此基本相对。可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。阳极设置在晶片上方并且靠近晶片，使得电镀溶液的弯液面保持在阳极和晶片之间。当阳极从晶片从第一位置移动到第二位置时，通过阳极和晶片之间的弯液面施加电流。此外，当阳极移动到晶片上时，第一和第二电极被控制以与晶片连接，同时确保阳极不通过连接的电极。

10. 发明申请

US20090242413A1 Electroplating Head and Method for Operating the Same 有权
标题翻译：电镀头及其操作方法
公开(公告)号：US20090242413A1
公开(公告)日：2009-10-01
申请号：US12482171
申请日：2009-06-10
申请人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
发明人： Yezdi Dordi , Bob Maraschin , John Boyd , Fred C. Redeker
IPC分类号： C25D21/10 , C25D3/02
CPC分类号： C25D5/026 , C25D5/02 , C25D5/06 , C25D17/14
摘要： An electroplating head is disposed above and proximate to an upper surface of a wafer. Cations are transferred from an anode to an electroplating solution within the electroplating head. The electroplating solution flows downward through a porous electrically resistive material at an exit of the electroplating head to be disposed on the upper surface of the wafer. An electric current is established between the anode and the upper surface of the wafer through the electroplating solution. The electric current is uniformly distributed by the porous electrically resistive material present between the anode and the upper surface of the wafer. The electric current causes the cations to be attracted to the upper surface of the wafer.
摘要翻译：电镀头设置在晶片的上表面上方并靠近晶片的上表面。阳离子从阳极转移到电镀头内的电镀溶液中。电镀溶液在电镀头的出口处向下流过多孔电阻材料以设置在晶片的上表面上。通过电镀溶液在晶片的阳极和上表面之间建立电流。通过存在于阳极和晶片上表面之间的多孔电阻材料均匀分布电流。电流导致阳离子被吸引到晶片的上表面。

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