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71. 发明申请

US20080272370A1 FIELD-EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 失效
公开(公告)号：US20080272370A1
公开(公告)日：2008-11-06
申请号：US12167540
申请日：2008-07-03
申请人： Ayanori Endo , Ryo Hayashi , Tatsuya Iwasaki
发明人： Ayanori Endo , Ryo Hayashi , Tatsuya Iwasaki
IPC分类号： H01L21/34 , H01L29/22
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/265 , H01L21/268 , H01L21/3003 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.

72. 发明申请

US20050189012A1 Zinc oxide film, photovoltaic device making use of the same, and zinc oxide film formation process 审中-公开
标题翻译：氧化锌膜，使用相同的光电器件，以及氧化锌膜的形成工艺
公开(公告)号：US20050189012A1
公开(公告)日：2005-09-01
申请号：US10693914
申请日：2003-10-28
申请人： Takaharu Kondo , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Satoru Yamada , Makoto Higashikawa , Masumitsu Iwata , Yusuke Miyamoto
发明人： Takaharu Kondo , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Satoru Yamada , Makoto Higashikawa , Masumitsu Iwata , Yusuke Miyamoto
IPC分类号： C23C14/08 , C23C28/04 , C25D9/04 , H01L31/0224 , H01L31/0352 , H01L31/0392 , H01L31/18 , H01L31/00
CPC分类号： H01L31/0392 , C23C14/086 , C23C28/044 , C23C28/30 , C23C28/323 , C23C28/324 , C23C28/345 , C25D9/04 , H01L31/022425 , H01L31/03529 , H01L31/03921 , H01L31/18 , Y02E10/50
摘要： In a zinc oxide film having a plurality of texture constituents comprised of hills each having structure wherein a first surface borders on a second surface along one curved line, texture constituents in which first surfaces the hills of the texture constituents have have an average angle of inclination in a size within the range of from 30 degrees or more to 60 degrees or less and second surfaces have an average angle of inclination in a size within the range of from 10 degrees or more to 35 degrees or less account for at least a half of the plurality of texture constituents. This enables improvement in characteristics and durability of zinc oxide films used as optical confinement layers in photovoltaic devices, and also enables formation thereof at a low cost.
摘要翻译：在具有多个纹理构成的氧化锌膜中，每个纹理组成由具有结构的山丘构成，其中第一表面沿着一个曲线边界在第二表面上，其中纹理成分的第一表面纹理成分的山丘具有平均倾角尺寸在30度以上至60度以下的范围内，第二表面具有在10度以上至35度以下的尺寸的平均倾斜角，占至少一半以上多个纹理成分。这使得能够改善用作光电器件中的光限制层的氧化锌膜的特性和耐久性，并且还能够以低成本形成。

73. 发明申请

US20120282742A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120282742A1
公开(公告)日：2012-11-08
申请号：US13551038
申请日：2012-07-17
申请人： Koichi Matsuda , Ryo Hayashi , Shinji Kodaira
发明人： Koichi Matsuda , Ryo Hayashi , Shinji Kodaira
IPC分类号： H01L21/336
CPC分类号： H01L29/78669 , H01L21/02488 , H01L21/02532 , H01L21/02595 , H01L21/0262 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： A method for manufacturing a silicon semiconductor device includes the steps of diluting a silicon-containing raw material gas with hydrogen gas by a factor equal to or larger than 600, applying radiofrequency power to a gas mixture of the diluted raw material gas and hydrogen gas to induce electric discharge, depositing silicon out of the raw material gas decomposed by the electric discharge onto a substrate, and controlling the pressure of the gas mixture to be equal to or higher than 600 Pa. The power density Pw(W/cm2) of the radiofrequency power is specified in such a manner that the value Pw(W/cm2)*D/P(Pa) should fall within the range of 0.083 to 0.222, both inclusive, where D represents the dilution factor between the raw material gas and hydrogen gas and P (Pa) represents the pressure of the gas mixture.
摘要翻译：一种硅半导体器件的制造方法，其特征在于，使用氢气将含硅原料气体稀释至600以上的步骤，向稀释的原料气体和氢气的气体混合物施加射频电力，诱导放电，将由放电分解的原料气体中的硅沉积在基板上，将气体混合物的压力控制在600Pa以上，功率密度Pw（W / cm 2）射频功率以Pw（W / cm2）* D / P（Pa）的值落在0.083〜0.222的范围内，其中D表示原料气体与氢气之间的稀释因子气体和P（Pa）表示气体混合物的压力。

74. 发明申请

US20100244022A1 THIN FILM TRANSISTOR AND METHOD OF PRODUCING SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20100244022A1
公开(公告)日：2010-09-30
申请号：US12743082
申请日：2009-01-20
申请人： Kenji Takahashi , Ryo Hayashi
发明人： Kenji Takahashi , Ryo Hayashi
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78648
摘要： A first gate electrode (2) is formed on a substrate (1); a first gate insulating layer (3) is formed so as to cover the first gate electrode (2); a semiconductor layer (4) including an oxide semiconductor is formed on the first gate insulating layer (3); a second gate insulating layer (7) is formed on the semiconductor layer (4); a second gate electrode (8) having a thickness equal to or larger than a thickness of the first gate electrode (2) is formed on the second gate insulating layer (7); and a drain electrode (6) and a source electrode (5) are formed so as to be connected to the semiconductor layer (4).
摘要翻译：第一栅电极（2）形成在基板（1）上; 形成第一栅极绝缘层（3）以覆盖第一栅电极（2）; 在第一栅极绝缘层（3）上形成包括氧化物半导体的半导体层（4）; 在所述半导体层（4）上形成第二栅绝缘层（7）。在所述第二栅极绝缘层（7）上形成厚度等于或大于所述第一栅电极（2）的厚度的第二栅电极（8）。并且形成漏电极（6）和源电极（5），以连接到半导体层（4）。

75. 发明申请

US20100194450A1 THIN-FILM TRANSISTOR CIRCUIT, DRIVING METHOD THEREOF, AND LIGHT-EMITTING DISPLAY APPARATUS 审中-公开
标题翻译：薄膜晶体管电路，其驱动方法和发光显示装置
公开(公告)号：US20100194450A1
公开(公告)日：2010-08-05
申请号：US12679682
申请日：2008-11-11
申请人： Hisae Shimizu , Ryo Hayashi , Katsumi Abe
发明人： Hisae Shimizu , Ryo Hayashi , Katsumi Abe
IPC分类号： H03K3/00 , H01L29/786 , H01L33/00
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2320/0233 , H01L27/1225 , H01L29/7869
摘要： In a light-emitting display apparatus including a plurality of pixels each including a light-emitting element and a driving circuit of the light-emitting element, and the driving circuit includes a plurality of thin-film transistors connected in parallel, a threshold voltage of the thin-film transistor reversibly changes according to a voltage applied between a gate and a source or between the gate and a drain of each of the thin-film transistors, by selecting and switching the plurality of thin-film transistors TFT11 to TFT13, the threshold voltage of the thin-film transistors for supplying a current to the light-emitting element is held within a predetermined range.
摘要翻译：在包括发光元件和发光元件的驱动电路的多个像素的发光显示装置中，驱动电路包括并联连接的多个薄膜晶体管，阈值电压薄膜晶体管通过选择并切换多个薄膜晶体管TFT11至TFT13，根据施加在栅极和源极之间或每个薄膜晶体管的栅极和漏极之间的电压而可逆地改变，用于向发光元件供给电流的薄膜晶体管的阈值电压保持在预定范围内。

76. 发明授权

US07737438B2 Field-effect transistor and method for manufacturing the same 失效
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US07737438B2
公开(公告)日：2010-06-15
申请号：US12167540
申请日：2008-07-03
申请人： Ayanori Endo , Ryo Hayashi , Tatsuya Iwasaki
发明人： Ayanori Endo , Ryo Hayashi , Tatsuya Iwasaki
IPC分类号： H01L29/12
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/265 , H01L21/268 , H01L21/3003 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.
摘要翻译：制造场效应晶体管的方法包括以下步骤：形成各自含有氢或氘的源极和漏极; 形成氧化物半导体层，其中如果加入氢或氘，则电阻降低; 并且使氢或氘从源电极和漏电极扩散到氧化物半导体层。

77. 发明授权

US07696513B2 Light-emitting device using oxide semiconductor thin-film transistor and image display apparatus using the same 有权
标题翻译：使用氧化物半导体薄膜晶体管的发光装置及使用其的图像显示装置
公开(公告)号：US07696513B2
公开(公告)日：2010-04-13
申请号：US12282721
申请日：2007-03-02
申请人： Ryo Hayashi , Tatsuya Iwasaki
发明人： Ryo Hayashi , Tatsuya Iwasaki
IPC分类号： H01L21/16
CPC分类号： H01L27/3244 , H01L27/3211 , H01L27/326 , H01L29/7869 , H01L2251/5323
摘要： The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a thin-film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer; a light-emitting layer; and a lower electrode and a counter electrode for sandwiching the light-emitting layer therebetween, wherein the active layer includes an oxide; the drain electrode is electrically connected with a part of the light-emitting layer; and the thin-film transistor is arranged in a region other than the blue pixel region on the substrate.
摘要翻译：本发明提供一种发光装置，包括：设置在基板上并包括蓝色像素区域，绿色像素区域和红色像素区域的像素区域，其对应于蓝色，绿色和红色三原色的光分别包括：具有源电极，漏电极，栅极电极，栅极绝缘膜和有源层的薄膜晶体管的像素区域; 发光层; 以及用于将发光层夹在其间的下电极和对电极，其中所述有源层包括氧化物; 漏电极与发光层的一部分电连接; 并且薄膜晶体管布置在基板上的除了蓝色像素区域之外的区域中。

78. 发明申请

US20090072233A1 LIGHT-EMITTING DEVICE USING OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR AND IMAGE DISPLAY APPARATUS USING THE SAME 有权
标题翻译：使用氧化物半导体薄膜晶体管和图像显示装置的发光装置
公开(公告)号：US20090072233A1
公开(公告)日：2009-03-19
申请号：US12282721
申请日：2007-03-02
申请人： Ryo Hayashi , Tatsuya Iwasaki
发明人： Ryo Hayashi , Tatsuya Iwasaki
IPC分类号： H01L33/00
CPC分类号： H01L27/3244 , H01L27/3211 , H01L27/326 , H01L29/7869 , H01L2251/5323
摘要： The present invention provides a light-emitting device, including: a pixel region provided on a substrate and including a blue pixel region, a green pixel region, and a red pixel region which correspond to lights of three primary colors of blue, green and red light, respectively, the pixel region including: a thin-film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and an active layer; a light-emitting layer; and a lower electrode and a counter electrode for sandwiching the light-emitting layer therebetween, wherein the active layer includes an oxide; the drain electrode is electrically connected with a part of the light-emitting layer; and the thin-film transistor is arranged in a region other than the blue pixel region on the substrate.
摘要翻译：本发明提供一种发光装置，包括：设置在基板上并包括蓝色像素区域，绿色像素区域和红色像素区域的像素区域，其对应于蓝色，绿色和红色三原色的光分别包括：具有源电极，漏电极，栅极电极，栅极绝缘膜和有源层的薄膜晶体管的像素区域; 发光层; 以及用于将发光层夹在其间的下电极和对电极，其中所述有源层包括氧化物; 漏电极与发光层的一部分电连接; 并且薄膜晶体管布置在基板上的除了蓝色像素区域之外的区域中。

79. 发明申请

US20080291350A1 ELECTRON DEVICE USING OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用氧化物半导体的电子器件及其制造方法
公开(公告)号：US20080291350A1
公开(公告)日：2008-11-27
申请号：US12123103
申请日：2008-05-19
申请人： Ryo Hayashi , Masafumi Sano
发明人： Ryo Hayashi , Masafumi Sano
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L27/1225
摘要： In an electron device in which plural thin film transistors each having at least a source electrode, a drain electrode, a semiconductor region including a channel, a gate insulation film and a gate electrode are provided on a substrate, a device separation region provided between the plural thin film transistors and the semiconductor region are constituted by a same metal oxide layer, and resistance of the semiconductor region is formed to be lower than resistance of the device separation region.
摘要翻译：在基板上设置有至少具有源电极，漏电极，包括沟道的半导体区域，栅极绝缘膜和栅极电极的多个薄膜晶体管的电子器件，设置在基板之间的器件分离区域多个薄膜晶体管和半导体区域由相同的金属氧化物层构成，半导体区域的电阻形成为低于器件分离区域的电阻。

80. 发明授权

US06737123B2 Silicon-based film formation process, silicon-based film, semiconductor device, and silicon-based film formation system 失效
标题翻译：硅基成膜工艺，硅基膜，半导体器件和硅基成膜体系
公开(公告)号：US06737123B2
公开(公告)日：2004-05-18
申请号：US10166759
申请日：2002-06-12
申请人： Takaharu Kondo , Masafumi Sano , Akira Sakai , Tadashi Sawayama , Ryo Hayashi , Shuichiro Sugiyama , Hiroyuki Ozaki , Yoshinori Sugiura
发明人： Takaharu Kondo , Masafumi Sano , Akira Sakai , Tadashi Sawayama , Ryo Hayashi , Shuichiro Sugiyama , Hiroyuki Ozaki , Yoshinori Sugiura
IPC分类号： C23C16505
CPC分类号： C23C16/517 , H01L21/02422 , H01L21/02425 , H01L21/02491 , H01L21/02505 , H01L21/02529 , H01L21/02532 , H01L21/0262 , H01L31/02363 , H01L31/02366 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.
摘要翻译：形成在高频电力上叠加直流电位的硅基膜，将高频供电部的电位设定为比地电位低V1的电位; 满足| V2 | <= | V1 | <= 50x | V2 |的V1，其中V2是在等离子体在相同条件下发生的状态下在电极中产生的与地电位的电位差，电流电势不叠加在高频电源上，并且电极进入非接地状态。这可以提供具有高成膜速度的优异特性的硅基膜和使用该硅基膜的半导体器件，具有优异的附着力，耐环境性，并且可以在制造时享受短的时间。

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