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1. 发明申请

US20050150773A1 Method for forming deposition film and method for producing photovoltaic device 审中-公开
标题翻译：用于形成沉积膜的方法和用于制造光伏器件的方法
公开(公告)号：US20050150773A1
公开(公告)日：2005-07-14
申请号：US10999926
申请日：2004-12-01
申请人： Satoru Yamada , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Masumitsu Iwata , Yusuke Miyamoto , Takaharu Kondo
发明人： Satoru Yamada , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Masumitsu Iwata , Yusuke Miyamoto , Takaharu Kondo
IPC分类号： C25D9/08 , C23C28/00 , C23C28/04 , C25D5/34 , C25D5/48 , H01L21/288 , H01L31/04
CPC分类号： C25D5/48 , C23C28/00 , C25D5/34
摘要： A method for forming a deposition film from an aqueous solution by electrochemical reaction includes the steps of: forming the targeted deposition film under primary deposition conditions; replacing at least part of members in contact with the solution or removing deposit on surfaces of the members; and depositing a film under secondary deposition conditions. These steps are performed in that order. Then, the deposition film is formed again under the primary deposition conditions. In the method, the resulting deposition film exhibits desired characteristics even after maintenance of the deposition apparatus.
摘要翻译：通过电化学反应从水溶液形成沉积膜的方法包括以下步骤：在初始沉积条件下形成目标沉积膜; 替换至少部分与溶液接触的构件或去除构件表面上的沉积物; 并在二次沉积条件下沉积薄膜。这些步骤按照顺序执行。然后，在初始沉积条件下再次形成沉积膜。在该方法中，即使在保存沉积设备之后，所得到的沉积膜也显示出期望的特性。

2. 发明授权

US5927994A Method for manufacturing thin film 失效
标题翻译：薄膜制造方法
公开(公告)号：US5927994A
公开(公告)日：1999-07-27
申请号：US782811
申请日：1997-01-13
申请人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： G03G5/08 , C23C16/50 , C23C16/54 , H01J37/32 , H01L21/205 , H01L31/04 , H01L31/20 , H01L21/20 , H01L21/36
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32541 , H01J37/3277 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A method of manufacturing thin films by plasma CVD is described. This method comprises supplying power to a power electrode in a way such that a self-bias upon plasma discharge of the power applying electrode, which is situated in a plasma discharge space, is a positive potential relative to a ground electrode.
摘要翻译：描述了通过等离子体CVD制造薄膜的方法。该方法包括以这样的方式向功率电极供电，使得位于等离子体放电空间中的功率施加电极的等离子体放电的自偏压相对于接地电极为正电位。

3. 发明授权

US07282132B2 Zinc oxide film treatment method and method of manufacturing photovoltaic device utilizing the same 失效
标题翻译：氧化锌膜处理方法及利用该方法制造光伏器件的方法
公开(公告)号：US07282132B2
公开(公告)日：2007-10-16
申请号：US10805323
申请日：2004-03-22
申请人： Masumitsu Iwata , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Takaharu Kondo , Satoru Yamada , Yusuke Miyamoto
发明人： Masumitsu Iwata , Noboru Toyama , Ryo Hayashi , Yuichi Sonoda , Tomonori Nishimoto , Takaharu Kondo , Satoru Yamada , Yusuke Miyamoto
IPC分类号： C25D5/50
CPC分类号： H01L31/1884 , C25D9/04 , H01L31/056 , H01L31/1864 , Y02E10/52 , Y02P70/521
摘要： A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaining a zinc oxide film that is low in electric resistance without impairing the light transmittance of the zinc oxide film.
摘要翻译：在含有氧的氮气或惰性气体气氛中，将从水溶液电化学沉积的氧化锌薄膜在等于或高于150℃等于或低于400℃的温度下进行热处理，由此获得电阻低而不损害氧化锌膜的透光率的氧化锌膜。

4. 发明授权

US6153013A Deposited-film-forming apparatus 失效
标题翻译：沉积膜形成装置
公开(公告)号：US6153013A
公开(公告)日：2000-11-28
申请号：US800512
申请日：1997-02-14
申请人： Akira Sakai , Shotaro Okabe , Masahiro Kanai , Yuzo Kohda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Akira Sakai , Shotaro Okabe , Masahiro Kanai , Yuzo Kohda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： C23C16/44 , C23C16/54 , H01L31/0392 , H01L31/20 , C23C16/06
CPC分类号： C23C16/4409 , C23C16/44 , C23C16/545 , H01L31/03921 , H01L31/202 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： The deposited-film-forming apparatus of the present invention is an apparatus for forming deposited films while continuously passing a belt-like member through the insides of a plurality of vacuum chambers connected via connecting members and superposingly forming a plurality of different thin films on the surface of the belt-like member by plasma-assisted CVD, wherein the vacuum chambers are fixed to a stand for supporting the vacuum chambers, and a mechanism for relaxing stress acting in the transport direction of the belt-like member, generated in the vacuum chambers by the action of expansion and contraction due to thermal expansion of the vacuum chambers, is provided between each vacuum chamber and each connecting member.
摘要翻译：本发明的沉积膜形成装置是一种用于形成沉积膜的装置，同时连续地通过带状构件穿过连接件的多个真空室的内部并在其上重叠地形成多个不同的薄膜通过等离子体辅助CVD形成带状构件的表面，其中真空室被固定到用于支撑真空室的支架上，以及用于放松在真空中产生的带状构件的传送方向上作用的应力的机构在每个真空室和每个连接构件之间设置由于真空室的热膨胀而引起的膨胀和收缩的作用的腔室。

5. 发明授权

US6100466A Method of forming microcrystalline silicon film, photovoltaic element, and method of producing same 有权
标题翻译：微晶硅膜的形成方法，光电元件及其制造方法
公开(公告)号：US6100466A
公开(公告)日：2000-08-08
申请号：US197473
申请日：1998-11-23
申请人： Tomonori Nishimoto
发明人： Tomonori Nishimoto
IPC分类号： C23C16/24 , C23C16/509 , H01L21/205 , H01L31/04 , H01L31/18 , C23C16/50 , H01L31/075 , H01L31/20
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/509 , Y02E10/545 , Y02P70/521
摘要： Provided is a method of forming a microcrystalline silicon film by a plasma CVD, which comprises introducing a high frequency electromagnetic wave into a film forming space through an electrode to induce a plasma thereby forming a deposited film on a substrate, wherein the relation of 400
摘要翻译：提供了通过等离子体CVD形成微晶硅膜的方法，其包括通过电极将高频电磁波引入成膜空间以诱导等离子体，从而在基板上形成沉积膜，其中400 < 当Q定义为Q = Pxf2 / d时，满足Q <10000，其中d（cm）是基板和电极之间的距离，P（Torr）是沉积膜形成期间的成膜空间的压力， f（MHz）是通过等离子体CVD形成微晶硅膜的微晶硅膜的高频电磁波形成方法的频率，其中定义为Q = Pxf2 / d的Q满足关系式400

6. 发明授权

US06530341B1 Deposition apparatus for manufacturing thin film 有权
标题翻译：用于制造薄膜的沉积装置
公开(公告)号：US06530341B1
公开(公告)日：2003-03-11
申请号：US09257027
申请日：1999-02-25
申请人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yuzo Kohda , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： H05H100
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32541 , H01J37/3277 , H01L31/202 , H01L31/204 , H01L31/206 , Y02E10/50 , Y02P70/521
摘要： A deposition apparatus of the present invention is arranged so that a surface area of a radio-frequency power applying cathode electrode disposed in a glow discharge space, in a space in contact with discharge is greater than a surface area of the whole of a ground electrode (anode electrode) including a beltlike member in the discharge space. This structure can maintain the potential (self-bias) of the cathode electrode disposed in the glow discharge space automatically at a positive potential with respect to the ground (anode) electrode including the beltlike member. As a result, the bias is applied in the direction of irradiation of ions with positive charge to a deposit film on the beltlike member, so that the ions existing in the plasma discharge are accelerated more efficiently toward the beltlike member, thereby effectively giving energy to the surface of deposit film by ion bombardment. Accordingly, since the structural relaxation of film is promoted even at relatively high deposition rates, a microcrystal semiconductor film can be formed at the relatively high deposition rates with good efficiency, with high uniformity, and with good reproducibility.
摘要翻译：本发明的沉积装置被布置成使得设置在辉光放电空间中的与放电接触的空间中的射频施加电极的表面积大于接地电极整体的表面积（阳极电极），其在放电空间中包括带状构件。该结构可以将设置在辉光放电空间中的阴极的电位（自偏压）自动保持在相对于包括结果，将带正电荷的离子的照射方向施加到带状构件上的沉积膜上，使得存在于等离子体放电中的离子更有效地朝向带状构件加速，从而有效地通过离子轰击给沉积膜表面赋予能量。因此，即使在相对高的沉积速率下也能促进膜的结构弛豫，可以以较高的沉积速率以高的均匀性和高的再现性形成微晶半导体膜。

7. 发明授权

US5769963A Photovoltaic device 失效
标题翻译：光伏装置
公开(公告)号：US5769963A
公开(公告)日：1998-06-23
申请号：US697783
申请日：1996-08-30
申请人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
发明人： Yasushi Fujioka , Shotaro Okabe , Masahiro Kanai , Akira Sakai , Yuzo Koda , Tadashi Hori , Tomonori Nishimoto , Takahiro Yajima
IPC分类号： H01L31/0368 , H01L31/075 , H01L31/20 , H01L31/0352
CPC分类号： H01L31/076 , H01L31/03682 , H01L31/075 , H01L31/206 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device comprises a semiconductor region having at least one set of semiconductor layers comprised of a first semiconductor layer having a first conductivity type, an intrinsic or substantially intrinsic second semiconductor layer, and a third semiconductor layer having a conductivity type opposite to that of the first conductivity type, the layers being formed in this order, and first and second electrodes provided such that the electrodes interpose the semiconductor region; wherein the density of a dopant impurity determining the conductivity type of the first semiconductor layer in a set of semiconductor layers which is in contact with the first electrode is varied so as to be lower on the side of the first electrode, or the grain size of crystals in the first semiconductor layer is varied so as to be smaller on the side of the first electrode. This provides a photovoltaic device that does not exhibit great lowering of characteristics even when short circuits locally occur in the semiconductor layers during long-term service.
摘要翻译：一种光电器件包括具有至少一组半导体层的半导体区域，该组半导体层由具有第一导电类型的第一半导体层，本征的或基本上本征的第二半导体层组成，以及具有与第第一导电类型，这些层依次形成，第一和第二电极设置成使得电极插入半导体区域; 其中确定与第一电极接触的一组半导体层中的第一半导体层的导电类型的掺杂剂杂质的密度在第一电极的侧面变化，或者在第一电极的一侧的晶粒尺寸第一半导体层中的晶体在第一电极侧变化较小。这提供了即使在长期服务期间在半导体层中局部出现短路的情况下也不会出现特性的降低的光电器件。

8. 发明授权

US6057005A Method of forming semiconductor thin film 失效
标题翻译：形成半导体薄膜的方法
公开(公告)号：US6057005A
公开(公告)日：2000-05-02
申请号：US986825
申请日：1997-12-08
申请人： Tomonori Nishimoto
发明人： Tomonori Nishimoto
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , H01L21/205 , H01L31/075 , H01L31/20 , H05H1/24 , B05D3/06
CPC分类号： H01L31/202 , C23C16/45591 , C23C16/509 , H01L21/02425 , H01L21/02532 , H01L21/0262 , H01L31/075 , Y02E10/548 , Y02P70/521
摘要： The present invention provides a forming method of a semiconductor thin film by a plasma CVD process comprising introducing a source gas and a high-frequency power into a film forming chamber to generate a plasma therein, thereby forming a semiconductor thin film on a substrate, wherein the frequency of the high-frequency power is within a range of 50 MHz to 2 GHz, the input power density thereof is within a range of 0.001 to 1.0 W/cm.sup.3, the discharge pressure is within a range of 0.005 to 0.5 Torr, the temperature of the substrate is within a range of 150 to 500.degree. C., and wherein a metal mesh is disposed so as to substantially confine the plasma between the substrate and a source gas introducing portion, thereby forming the semiconductor thin film.
摘要翻译：本发明提供了一种通过等离子体CVD工艺制造的半导体薄膜的形成方法，包括将源气体和高频功率引入成膜室以在其中产生等离子体，从而在衬底上形成半导体薄膜，其中高频功率的频率在50MHz〜2GHz的范围内，其输入功率密度在0.001〜1.0W / cm 3的范围内，放电压力在0.005〜0.5Torr的范围内，基板的温度在150〜500℃的范围内，并且其中设置金属网，以便基本上将等离子体限制在基板和源气体导入部之间，从而形成半导体薄膜。

9. 发明授权

US6043427A Photovoltaic device, photoelectric transducer and method of manufacturing same 失效
标题翻译：光电器件，光电传感器及其制造方法
公开(公告)号：US6043427A
公开(公告)日：2000-03-28
申请号：US025794
申请日：1998-02-19
申请人： Tomonori Nishimoto
发明人： Tomonori Nishimoto
IPC分类号： H01L31/10 , H01L31/0368 , H01L31/04 , H01L31/075 , H01L31/105 , H01L31/18 , H01L25/00
CPC分类号： H01L31/03685 , H01L31/075 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device and a photoelectric transducer having a pin-structure semiconductor layer formed by superposing a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer wherein the i-type semiconductor layer comprises a non-single crystal semiconductor and average grain size distribution of crystal grains of the i-type semiconductor layer is not uniform are provided. Methods of manufacturing the photovoltaic device and the photoelectric transducer are also provided. The manufacturing methods according to the invention can produce photovoltaic devices and photoelectric transducers having an excellent photoelectric conversion efficiency and a remarkable optical stability at an enhanced rate and at low cost.
摘要翻译：一种光电器件和光电传感器，其具有通过重叠p型半导体层，i型半导体层和n型半导体层而形成的pin结构半导体层，其中i型半导体层包括非单晶提供i型半导体层的晶粒的半导体和平均粒度分布不均匀。还提供了制造光伏器件和光电换能器的方法。根据本发明的制造方法可以以增加的速率和低成本生产具有优异的光电转换效率和显着的光学稳定性的光电装置和光电换能器。

10. 发明授权

US5401330A Photovoltaic element 失效
标题翻译：光伏元件
公开(公告)号：US5401330A
公开(公告)日：1995-03-28
申请号：US275274
申请日：1994-07-15
申请人： Keishi Saito , Toshimitsu Kariya , Koichi Matsuda , Naoto Okada , Yutaka Nishio , Tomonori Nishimoto , Takaharu Kondo
发明人： Keishi Saito , Toshimitsu Kariya , Koichi Matsuda , Naoto Okada , Yutaka Nishio , Tomonori Nishimoto , Takaharu Kondo
IPC分类号： H01L31/04 , H01L31/052 , H01L31/076 , H01L31/18 , H01L31/20 , H01L31/075
CPC分类号： H01L31/204 , H01L31/056 , H01L31/076 , H01L31/1884 , H01L31/202 , Y02E10/52 , Y02E10/548 , Y02P70/521
摘要： The present invention aims to provide a photovoltaic element which can maintain high initial characteristics over long term usage even under severe environments, and can be mass-produced with high yield.A photovoltaic element in which a light reflecting layer, a light reflection multiplying layer, an n-type layer, an i-type layer, and a p-type layer composed of a non-single crystal semiconductor material comprising at least silicon, and a transparent electrode are successively formed on a conductive substrate, characterized in that said light reflecting layer comprises silver or copper atoms as the main constituent and further contains at least one of oxygen, nitrogen, and carbon.Also, in another embodiment, this photovoltaic element is characterized in that said light reflecting layer comprises silver as the main constituent, and further contains lead, lead and gold, or lead, gold, and a first transition group metal in an amount of 2 to 100 ppm.
摘要翻译：本发明的目的在于提供即使在恶劣的环境下长期使用也能够维持高的初始特性的光电元件，能够大批量生产。一种光电元件，其中包括至少包含硅的非单晶半导体材料构成的光反射层，光反射倍增层，n型层，i型层和p型层，以及透明电极依次形成在导电性基板上，其特征在于，所述光反射层包含银或铜原子作为主要成分，并且还含有氧，氮和碳中的至少一种。此外，在另一个实施方案中，该光电元件的特征在于，所述光反射层包含银作为主要成分，并且还含有铅，铅和金，或铅，金和第一过渡族金属，其量为2至 100 ppm。

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