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1. 发明授权

US09373724B2 Method of driving transistor and device including transistor driven by the method 有权
标题翻译：驱动晶体管和器件的方法包括由该方法驱动的晶体管
公开(公告)号：US09373724B2
公开(公告)日：2016-06-21
申请号：US13005890
申请日：2011-01-13
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： H01L29/04 , H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78633
摘要： Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG≦VON1×C1/(C1+C2) to the second conductive layer.
摘要翻译：公开了一种驱动包括半导体层，第一绝缘层，第二绝缘层，第一导电层和第二导电层的晶体管的方法，使得半导体层设置在第一和第二绝缘层之间，一个表面与第一导电层接触的与第一导电层接触的与第一绝缘层相反的第一绝缘层的第一绝缘层与第二导电层接触的第二绝缘层与与半导体层接触的另一表面相对的一个表面。该方法包括将第二导电层施加满足VBG＆lt; N1E，VON1×C1 /（C1 + C2）的关系的电压VBG。

2. 发明申请

US20110175674A1 METHOD OF DRIVING TRANSISTOR AND DEVICE INCLUDING TRANSISTOR DRIVEN BY THE METHOD 有权
标题翻译：驱动晶体管的方法和包括通过该方法驱动的晶体管的器件
公开(公告)号：US20110175674A1
公开(公告)日：2011-07-21
申请号：US13005890
申请日：2011-01-13
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： G05F1/10 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78633
摘要： Disclosed is a method of driving a transistor including a semiconductor layer, a first insulating layer, a second insulating layer, a first conductive layer, and a second conductive layer such that the semiconductor layer is disposed between the first and second insulating layers, one surface of the first insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the first conductive layer, one surface of the second insulating layer opposite the other surface in contact with the semiconductor layer is in contact with the second conductive layer. The method includes applying a voltage VBG that satisfies the relation of VBG≦VON1×C1/(C1+C2) to the second conductive layer.
摘要翻译：公开了一种驱动包括半导体层，第一绝缘层，第二绝缘层，第一导电层和第二导电层的晶体管的方法，使得半导体层设置在第一和第二绝缘层之间，一个表面与第一导电层接触的与第一导电层接触的与第一绝缘层相反的第一绝缘层的第一绝缘层与第二导电层接触的第二绝缘层与与半导体层接触的另一表面相对的一个表面。该方法包括将第二导电层施加满足VBG＆lt; N1E，VON1×C1 /（C1 + C2）的关系的电压VBG。

3. 发明申请

US20110092016A1 METHOD OF TREATING SEMICONDUCTOR ELEMENT 有权
标题翻译：处理半导体元件的方法
公开(公告)号：US20110092016A1
公开(公告)日：2011-04-21
申请号：US12865032
申请日：2009-03-02
申请人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
发明人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
IPC分类号： H01L21/26 , H01L21/34
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78633
摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.
摘要翻译：在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。半导体中间隙状态的面密度为1013cm-2eV-1或更小。带隙可以是2eV或更大。半导体可以包括选自In，Ga，Zn和Sn中的至少一种。半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

4. 发明申请

US20100194450A1 THIN-FILM TRANSISTOR CIRCUIT, DRIVING METHOD THEREOF, AND LIGHT-EMITTING DISPLAY APPARATUS 审中-公开
标题翻译：薄膜晶体管电路，其驱动方法和发光显示装置
公开(公告)号：US20100194450A1
公开(公告)日：2010-08-05
申请号：US12679682
申请日：2008-11-11
申请人： Hisae Shimizu , Ryo Hayashi , Katsumi Abe
发明人： Hisae Shimizu , Ryo Hayashi , Katsumi Abe
IPC分类号： H03K3/00 , H01L29/786 , H01L33/00
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2320/0233 , H01L27/1225 , H01L29/7869
摘要： In a light-emitting display apparatus including a plurality of pixels each including a light-emitting element and a driving circuit of the light-emitting element, and the driving circuit includes a plurality of thin-film transistors connected in parallel, a threshold voltage of the thin-film transistor reversibly changes according to a voltage applied between a gate and a source or between the gate and a drain of each of the thin-film transistors, by selecting and switching the plurality of thin-film transistors TFT11 to TFT13, the threshold voltage of the thin-film transistors for supplying a current to the light-emitting element is held within a predetermined range.
摘要翻译：在包括发光元件和发光元件的驱动电路的多个像素的发光显示装置中，驱动电路包括并联连接的多个薄膜晶体管，阈值电压薄膜晶体管通过选择并切换多个薄膜晶体管TFT11至TFT13，根据施加在栅极和源极之间或每个薄膜晶体管的栅极和漏极之间的电压而可逆地改变，用于向发光元件供给电流的薄膜晶体管的阈值电压保持在预定范围内。

5. 发明授权

US08654114B2 Thin film transistor circuit, light emitting display apparatus, and driving method thereof 失效
标题翻译：薄膜晶体管电路，发光显示装置及其驱动方法
公开(公告)号：US08654114B2
公开(公告)日：2014-02-18
申请号：US12667827
申请日：2008-07-29
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： G09G5/00
CPC分类号： G09G3/3258 , G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2320/0233 , G09G2320/043
摘要： In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.
摘要翻译：为了抑制电应力对使用TFT的TFT特性的影响，根据本发明的发光显示装置包括有机EL器件和用于驱动有机EL器件的驱动电路。驱动电路包括多个像素，每个像素具有薄膜晶体管，其阈值电压由于在栅极端子和源极端子之间施加的电应力而可逆地改变;以及电压施加单元，其将薄膜晶体管的栅极电位设置为高于源潜力。电压施加单元在薄膜晶体管未被驱动时在栅极端子和源极端子之间施加电应力，以便在阈值电压饱和到电应力的区域中驱动薄膜晶体管。

6. 发明授权

US08084331B2 Method of treating semiconductor element 有权
标题翻译：半导体元件的处理方法
公开(公告)号：US08084331B2
公开(公告)日：2011-12-27
申请号：US12865032
申请日：2009-03-02
申请人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
发明人： Masato Ofuji , Katsumi Abe , Hisae Shimizu , Ryo Hayashi , Masafumi Sano , Hideya Kumomi , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko
IPC分类号： H01L21/331
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78633
摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.
摘要翻译：在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。半导体中间隙状态的面密度为1013cm-2eV-1或更小。带隙可以是2eV或更大。半导体可以包括选自In，Ga，Zn和Sn中的至少一种。半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

7. 发明申请

US20110001747A1 THIN FILM TRANSISTOR CIRCUIT, LIGHT EMITTING DISPLAY APPARATUS, AND DRIVING METHOD THEREOF 失效
标题翻译：薄膜晶体管电路，发光显示装置及其驱动方法
公开(公告)号：US20110001747A1
公开(公告)日：2011-01-06
申请号：US12667827
申请日：2008-07-29
申请人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
发明人： Hisae Shimizu , Katsumi Abe , Ryo Hayashi
IPC分类号： G09G5/00 , H03B1/00
CPC分类号： G09G3/3258 , G09G3/3233 , G09G2300/0417 , G09G2300/0842 , G09G2320/0233 , G09G2320/043
摘要： In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.
摘要翻译：为了抑制电应力对使用TFT的TFT特性的影响，根据本发明的发光显示装置包括有机EL器件和用于驱动有机EL器件的驱动电路。驱动电路包括多个像素，每个像素具有薄膜晶体管，其阈值电压由于在栅极端子和源极端子之间施加的电应力而可逆地改变;以及电压施加单元，其将薄膜晶体管的栅极电位设置为高于源潜力。电压施加单元在薄膜晶体管未被驱动时在栅极端子和源极端子之间施加电应力，以便在阈值电压饱和到电应力的区域中驱动薄膜晶体管。

8. 发明申请

US20110187888A1 DRIVE CIRCUIT AND DRIVE METHOD OF LIGHT EMITTING DISPLAY APPARATUS 有权
标题翻译：发光显示装置的驱动电路和驱动方法
公开(公告)号：US20110187888A1
公开(公告)日：2011-08-04
申请号：US13086226
申请日：2011-04-13
申请人： Hisae Shimizu , Katsumi Abe
发明人： Hisae Shimizu , Katsumi Abe
IPC分类号： H04N5/228 , G06F3/038 , G09G3/32
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0417 , G09G2300/043 , G09G2300/0819 , G09G2300/0861 , G09G2310/0262 , G09G2320/043
摘要： A drive circuit for a light emitting display apparatus including a pixel circuit having a light emitting device for emitting a light having brightness determined based on supplied current and a drive transistor for supplying the current to the light emitting device, comprises a threshold value correction circuit converting a second signal including a threshold voltage of the drive transistor and a data voltage, the second signal being output from the drive transistor when a first signal including the data voltage is input into the control electrode of the drive transistor, into a third signal including the threshold voltage of an inverted polarity and the data voltage or a voltage corresponding to the data voltage, to output the converted third signal to the pixel circuit. The pixel circuit includes a switch for supplying the third signal to the control electrode of the drive transistor.
摘要翻译：一种用于发光显示装置的驱动电路，包括具有发光装置的像素电路，所述发光装置用于发射基于所提供的电流确定的亮度的光和用于向所述发光装置提供电流的驱动晶体管，所述驱动电路包括阈值校正电路转换包括驱动晶体管的阈值电压的第二信号和数据电压，当包括数据电压的第一信号被输入到驱动晶体管的控制电极时，第二信号从驱动晶体管输出到第三信号，第三信号包括反转极性的阈值电压和数据电压或对应于数据电压的电压，以将转换的第三信号输出到像素电路。像素电路包括用于将第三信号提供给驱动晶体管的控制电极的开关。

9. 发明申请

US20080225023A1 DRIVE CIRCUIT AND DRIVE METHOD OF LIGHT EMITTING DISPLAY APPARATUS 失效
标题翻译：发光显示装置的驱动电路和驱动方法
公开(公告)号：US20080225023A1
公开(公告)日：2008-09-18
申请号：US12028588
申请日：2008-02-08
申请人： Hisae Shimizu , Katsumi Abe
发明人： Hisae Shimizu , Katsumi Abe
IPC分类号： G06F3/038
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0417 , G09G2300/043 , G09G2300/0819 , G09G2300/0861 , G09G2310/0262 , G09G2320/043
摘要： A drive circuit for a light emitting display apparatus including a pixel circuit having a light emitting device for emitting a light having brightness determined based on supplied current and a drive transistor for supplying the current to the light emitting device, comprises a threshold value correction circuit converting a second signal including a threshold voltage of the drive transistor and a data voltage, the second signal being output from the drive transistor when a first signal including the data voltage is input into the control electrode of the drive transistor, into a third signal including the threshold voltage of an inverted polarity and the data voltage or a voltage corresponding to the data voltage, to output the converted third signal to the pixel circuit. The pixel circuit includes a switch for supplying the third signal to the control electrode of the drive transistor.
摘要翻译：一种用于发光显示装置的驱动电路，包括具有发光装置的像素电路，所述发光装置用于发射基于所提供的电流确定的亮度的光和用于向所述发光装置提供电流的驱动晶体管，所述驱动电路包括阈值校正电路转换包括驱动晶体管的阈值电压的第二信号和数据电压，当包括数据电压的第一信号被输入到驱动晶体管的控制电极时，第二信号从驱动晶体管输出到第三信号，第三信号包括反转极性的阈值电压和数据电压或对应于数据电压的电压，以将转换的第三信号输出到像素电路。像素电路包括用于将第三信号提供给驱动晶体管的控制电极的开关。

10. 发明授权

US08610695B2 Drive circuit and drive method of light emitting display apparatus 有权
标题翻译：发光显示装置的驱动电路及驱动方法
公开(公告)号：US08610695B2
公开(公告)日：2013-12-17
申请号：US13086226
申请日：2011-04-13
申请人： Hisae Shimizu , Katsumi Abe
发明人： Hisae Shimizu , Katsumi Abe
IPC分类号： G09G5/00
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0417 , G09G2300/043 , G09G2300/0819 , G09G2300/0861 , G09G2310/0262 , G09G2320/043
摘要： A drive circuit for a light emitting display apparatus including a pixel circuit having a light emitting device for emitting a light having brightness determined based on supplied current and a drive transistor for supplying the current to the light emitting device, comprises a threshold value correction circuit converting a second signal including a threshold voltage of the drive transistor and a data voltage, the second signal being output from the drive transistor when a first signal including the data voltage is input into the control electrode of the drive transistor, into a third signal including the threshold voltage of an inverted polarity and the data voltage or a voltage corresponding to the data voltage, to output the converted third signal to the pixel circuit. The pixel circuit includes a switch for supplying the third signal to the control electrode of the drive transistor.
摘要翻译：一种用于发光显示装置的驱动电路，包括具有发光装置的像素电路，所述发光装置用于发射基于所提供的电流确定的亮度的光和用于向所述发光装置提供电流的驱动晶体管，所述驱动电路包括阈值校正电路转换包括驱动晶体管的阈值电压的第二信号和数据电压，当包括数据电压的第一信号被输入到驱动晶体管的控制电极时，第二信号从驱动晶体管输出到第三信号，第三信号包括反转极性的阈值电压和数据电压或对应于数据电压的电压，以将转换的第三信号输出到像素电路。像素电路包括用于将第三信号提供给驱动晶体管的控制电极的开关。

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