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71. 发明申请

US20080068603A1 ANTI-VIBRATION APPARATUS, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：防振装置，曝光装置和装置制造方法
公开(公告)号：US20080068603A1
公开(公告)日：2008-03-20
申请号：US11846904
申请日：2007-08-29
申请人： Ryo Nawata , Mitsuru Inoue , Hiroshi Ito , Makoto Mizuno
发明人： Ryo Nawata , Mitsuru Inoue , Hiroshi Ito , Makoto Mizuno
IPC分类号： G01N21/01 , G03B27/62 , H01S4/00
CPC分类号： G03B27/53 , G03F7/70833 , G03F7/709 , Y10T29/49002
摘要： An anti-vibration apparatus includes a target object, a reference object, a measuring device which measures the position of the target object relative to the reference object, a driving mechanism to drive the target object based on the measurement result obtained by the measuring device, a Lorentz's force actuator which supports the reference object, and a power supply device which supplies a constant current to the Lorentz's force actuator. The actuator which supports the reference object uses a Lorentz's force actuator or an actuator which supports the reference object by the pressure of a gas.
摘要翻译：防振装置包括目标物体，参考物体，测量目标物体相对于基准物体的位置的测量装置，基于由测量装置获得的测量结果来驱动目标物体的驱动机构，支撑参考对象的洛伦兹力致动器，以及向洛伦兹力致动器提供恒定电流的电源装置。支撑参考对象的致动器使用洛仑兹力致动器或通过气体压力支撑参考对象的致动器。

72. 发明授权

US07161215B2 Semiconductor memory device and method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device 有权
标题翻译：半导体存储器件及其制造方法，制造垂直MISFET和垂直MISFET的方法以及半导体器件和半导体器件的制造方法
公开(公告)号：US07161215B2
公开(公告)日：2007-01-09
申请号：US11418029
申请日：2006-05-05
申请人： Hiraku Chakihara , Kousuke Okuyama , Masahiro Moniwa , Makoto Mizuno , Keiji Okamoto , Mitsuhiro Noguchi , Tadanori Yoshida , Yasuhiko Takahshi , Akio Nishida
发明人： Hiraku Chakihara , Kousuke Okuyama , Masahiro Moniwa , Makoto Mizuno , Keiji Okamoto , Mitsuhiro Noguchi , Tadanori Yoshida , Yasuhiko Takahshi , Akio Nishida
IPC分类号： H01L29/78 , G11C11/412
CPC分类号： H01L29/6675 , H01L21/823885 , H01L27/105 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L29/7833 , H01L29/78642
摘要： Vertical MISFETs are formed over drive MISFETs and transfer MISFETs. The vertical MISFETs comprise rectangular pillar laminated bodies each formed by laminating a lower semiconductor layer (drain), an intermediate semiconductor layer, and an upper semiconductor layer (source), and gate electrodes formed on corresponding side walls of the laminated bodies with gate insulating films interposed therebetween. In each vertical MISFET, the lower semiconductor layer constitutes a drain, the intermediate semiconductor layer constitutes a substrate (channel region), and the upper semiconductor layer constitutes a source. The lower semiconductor layer, the intermediate semiconductor layer and the upper semiconductor layer are each comprised of a silicon film. The lower semiconductor layer and the upper semiconductor layer are doped with a p type and constituted of a p type silicon film.
摘要翻译：垂直MISFET形成在驱动MISFET和传输MISFET上。垂直MISFET包括通过层叠下半导体层（漏极），中间半导体层和上半导体层（源极）形成的矩形柱层叠体以及在层叠体的相应侧壁上形成有栅极绝缘膜的栅电极插入其间。在每个垂直MISFET中，下半导体层构成漏极，中间半导体层构成衬底（沟道区），上半导体层构成源极。下半导体层，中间半导体层和上半导体层均由硅膜构成。下半导体层和上半导体层掺杂有p型并由p型硅膜构成。

73. 发明申请

US20060252805A1 Medicine for prevention of and treatment for arteriosclerosis and hypertension 审中-公开
标题翻译：用于预防和治疗动脉硬化和高血压的药物
公开(公告)号：US20060252805A1
公开(公告)日：2006-11-09
申请号：US11484132
申请日：2006-07-11
申请人： Masatsugu Horiuchi , Masaru Iwai , Toshio Sada , Makoto Mizuno
发明人： Masatsugu Horiuchi , Masaru Iwai , Toshio Sada , Makoto Mizuno
IPC分类号： A61K31/455 , A61K31/4184
CPC分类号： A61K31/4178 , A61K31/4422 , A61K31/455 , A61K45/06 , A61K2300/00
摘要： A pharmaceutical composition comprising the following active ingredients: (A) an angiotensin II receptor antagonist which is (5-methyl-2-oxo-1,3-dioxolen-4-yl)methyl 4-(1-hydroxy-1-methylethyl)-2-propyl-1 [[2′-(1H-tetrazol-5-yl)biphenyl-4-yl]methyl]imidazol-5-carboxylate and (B) a calcium channel blocker which is amlodipine. The composition is useful for the prophylaxis and/or treatment of arteriosclerosis, hypertension, heart diseases, renal diseases or cerebrovascular diseases.
摘要翻译：一种药物组合物，其包含以下活性成分：（A）血管紧张素II受体拮抗剂，其为4-（1-羟基-1-甲基乙基）（5-甲基-2-氧代-1,3-二氧杂环戊烯-4-基） -2-丙基-1 [[2' - （1H-四唑-5-基）联苯-4-基]甲基]咪唑-5-羧酸甲酯和（B）钙通道阻断剂，其为氨氯地平。该组合物可用于预防和/或治疗动脉硬化，高血压，心脏病，肾脏疾病或脑血管疾病。

74. 发明申请

US20060209436A1 Driving system and optical-element driving system 有权
标题翻译：驱动系统和光学元件驱动系统
公开(公告)号：US20060209436A1
公开(公告)日：2006-09-21
申请号：US11374193
申请日：2006-03-14
申请人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
发明人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
IPC分类号： G03C5/00 , G02B7/02
CPC分类号： G03F7/70825
摘要： Disclosed is a driving system for driving an optical element in a first direction, that includes a linear actuator for producing a displacement in a second direction perpendicular to the first direction, a displacement picking unit being extendable in a third direction, perpendicular to both of the first and second directions, for picking out a displacement of the linear actuator, and a direction converting unit disposed at the third-direction side of the linear actuator, for converting a direction of the displacement picked out by the displacement picking unit.
摘要翻译：公开了一种用于沿第一方向驱动光学元件的驱动系统，其包括用于在与第一方向垂直的第二方向上产生位移的线性致动器，位移拾取单元可沿第三方向延伸，垂直于两者用于拾取线性致动器的位移的第一和第二方向;以及设置在线性致动器的第三方侧的方向转换单元，用于转换由位移拾取单元拾取的位移的方向。

75. 发明授权

US07087955B2 Semiconductor device and a method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07087955B2
公开(公告)日：2006-08-08
申请号：US10811830
申请日：2004-03-30
申请人： Yoshiyuki Kawashima , Fumitoshi Ito , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama
发明人： Yoshiyuki Kawashima , Fumitoshi Ito , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama
IPC分类号： H01L29/788
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/28282 , H01L29/42324 , H01L29/66833
摘要： A semiconductor device has a nonvolatile memory employing a split-gate type memory cell structure, using a nitride film as a charge storage layer. An n-type semiconductor region is formed in a main surface of a semiconductor substrate, and then, a memory gate electrode of a memory cell of a split gate type and a charge storage layer are formed over the semiconductor region. Subsequently, side walls are formed on side surfaces of the memory gate electrode, and a photoresist pattern is formed over the main surface of the semiconductor substrate. The photoresist pattern serves as an etching mask, and a part of the main surface of the semiconductor substrate is removed by etching to form a dent. In the region of the dent, the n-type semiconductor region is removed. Then, a p-type semiconductor region for forming a channel of an nMIS transistor for selecting a memory cell is formed.
摘要翻译：半导体器件具有使用氮化物膜作为电荷存储层的采用分离栅型存储单元结构的非易失性存储器。在半导体衬底的主表面中形成n型半导体区域，然后在半导体区域上形成分裂栅型存储单元的存储栅电极和电荷存储层。随后，在存储栅电极的侧表面上形成侧壁，并且在半导体衬底的主表面上形成光刻胶图形。光致抗蚀剂图案用作蚀刻掩模，并且通过蚀刻去除半导体衬底的主表面的一部分以形成凹陷。在凹陷的区域中，去除n型半导体区域。然后，形成用于形成用于选择存储单元的nMIS晶体管的沟道的p型半导体区域。

76. 发明申请

US20060167026A1 Antipsychotic molecular-targeting epithelial growth factor receptor 审中-公开
标题翻译：抗精神病药分子靶向上皮生长因子受体
公开(公告)号：US20060167026A1
公开(公告)日：2006-07-27
申请号：US10540989
申请日：2004-01-05
申请人： Hiroyuki Nawa , Makoto Mizuno
发明人： Hiroyuki Nawa , Makoto Mizuno
IPC分类号： A61K31/517
CPC分类号： A61K31/517 , A61K31/47 , A61K31/4709 , A61K31/4741 , A61K31/496 , A61K31/519
摘要： The purpose of this invention is to provide an agent useful for prevention and/or treatment of psychosis, schizophrenia and cognitive impairments. To solve this problem, this invention provides epidermal growth factor receptor inhibitors as therapeutic agents for psychosis, schizophrenia and cognitive impairments.
摘要翻译：本发明的目的是提供一种可用于预防和/或治疗精神病，精神分裂症和认知障碍的药剂。为了解决这个问题，本发明提供表皮生长因子受体抑制剂作为精神病，精神分裂症和认知障碍的治疗剂。

77. 发明申请

US20050113367A1 Pharmaceutical composition 审中-公开
标题翻译：药物组成
公开(公告)号：US20050113367A1
公开(公告)日：2005-05-26
申请号：US11020624
申请日：2004-12-23
申请人： Toshio Sada , Makoto Mizuno
发明人： Toshio Sada , Makoto Mizuno
IPC分类号： A61K31/4178 , A61K31/54 , A61K45/06 , A61P9/12 , A61K31/549
CPC分类号： A61K45/06 , A61K31/4178 , A61K31/54 , A61K2300/00
摘要： A pharmaceutical composition which comprises (i) an angiotensin II receptor antagonist having the following formula (I), a pharmacologically acceptable salt thereof, a pharmacologically acceptable ester thereof or a pharmacologically acceptable salt of such ester, and (ii) a diuretic which is at least one thiazide compound: The pharmaceutical composition has an excellent hypotensive effect and low toxicity, and therefore is useful as a medicament for treating hypertension or heart disease.
摘要翻译：一种药物组合物，其包含（i）具有下式（I）的血管紧张素II受体拮抗剂，其药学上可接受的盐，其药学上可接受的酯或该药学上可接受的盐，以及（ii）至少一种噻嗪类化合物：药物组合物具有优异的降血压作用和低毒性，因此可用作治疗高血压或心脏病的药物。

78. 发明申请

US20050006698A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20050006698A1
公开(公告)日：2005-01-13
申请号：US10852150
申请日：2004-05-25
申请人： Nozomu Matsuzaki , Tetsuya Ishimaru , Makoto Mizuno , Takashi Hashimoto
发明人： Nozomu Matsuzaki , Tetsuya Ishimaru , Makoto Mizuno , Takashi Hashimoto
IPC分类号： G11C16/02 , G11C16/04 , G11C16/06 , G11C16/10 , G11C16/12 , G11C16/34 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C16/107 , G11C16/3468
摘要： Memory cells in which an erase and write operation is performed by injecting electrons from a substrate and extracting the electrons into a gate electrode constitute a semiconductor nonvolatile memory device. That is a gate extraction semiconductor nonvolatile memory device. In that device, if an erase bias is applied in a first process of an erase and write operation, memory cells in an overerase condition occur and the charge retention characteristics of such memory cells are degraded. The present invention provides a semiconductor nonvolatile memory device using means for writing all the memory cells in an erase unit before applying the erase bias, and then applying the erase bias.
摘要翻译：通过从基板注入电子并将电子提取到栅极电极进行擦除和写入操作的存储单元构成半导体非易失性存储器件。这是一个栅极提取半导体非易失性存储器件。在该器件中，如果在擦除和写入操作的第一过程中施加擦除偏置，则发生过度过热状态的存储器单元，并且这种存储器单元的电荷保留特性降低。本发明提供一种半导体非易失性存储器件，其使用在施加擦除偏置之前将所有存储单元写入擦除单元的装置，然后施加擦除偏置。

79. 发明授权

US06750947B1 Driving device and exposure apparatus 有权
标题翻译：驱动装置和曝光装置
公开(公告)号：US06750947B1
公开(公告)日：2004-06-15
申请号：US09590182
申请日：2000-06-09
申请人： Hiroyuki Tomita , Ryuichi Ebinuma , Makoto Mizuno
发明人： Hiroyuki Tomita , Ryuichi Ebinuma , Makoto Mizuno
IPC分类号： G03B2768
CPC分类号： G03F7/70825 , G02B7/026 , G02B15/14
摘要： A driving device includes a first member, an annular second member arranged outside the first member, an annular first plate for connecting the first and second members to each other, and an annular second plate for connecting the first and second members to each other. The first and second members are moved relative to each other by supplying or exhausting a fluid into or from a space surrounded by the first and second members and the first and second plates. Also, at least one of (i) an inner diameter a1 of a portion of the second member at which the second member is connected to the first plate is different from an inner diameter a2 of a portion of the second member at which the second member is connected to the second plate and (ii) an outer diameter b1 of a portion of the first member at which the first member is connected to the first plate is different from an outer diameter b2 of a portion of the first member at which the first member is connected to the second plate.
摘要翻译：驱动装置包括第一构件，布置在第一构件外部的环形第二构件，用于将第一构件和第二构件彼此连接的环形第一板和用于将第一构件和第二构件彼此连接的环形第二板。通过向第一和第二构件以及第一和第二板围绕的空间供应或排出流体，第一和第二构件相对于彼此移动。此外，（i）第二构件的与第一板连接的部分的内径a1中的至少一个与第二构件的第二构件的一部分的内径a2不同，连接到第二板，并且（ii）第一构件与第一板连接的部分的外径b1不同于第一构件的第一构件的第一构件的一部分的外径b2 构件连接到第二板。

80. 发明授权

US06266110B1 Semiconductor device reeventing light from entering its substrate transistor and the same for driving reflection type liquid crystal 失效
标题翻译：半导体器件防止光进入其衬底晶体管，并且用于驱动反射型液晶
公开(公告)号：US06266110B1
公开(公告)日：2001-07-24
申请号：US08901696
申请日：1997-07-28
申请人： Makoto Mizuno , Masanori Iwahashi , Toshihiro Shimizu , Masaaki Fujishima , Koji Hanihara , Itaru Tsuchiya , Yasuo Yagi
发明人： Makoto Mizuno , Masanori Iwahashi , Toshihiro Shimizu , Masaaki Fujishima , Koji Hanihara , Itaru Tsuchiya , Yasuo Yagi
IPC分类号： G02F11345
CPC分类号： H01L21/76819 , G02F1/136227 , G02F1/136277
摘要： An uppermost metal wiring layer is formed of titan Ti and titan nitride TiN formed thereon, on which tungsten W for filling a via hole can be deposited. The via hole is filled with W. The surface of a metal wiring layer below the uppermost metal wiring layer is covered with a low reflectivity film made of titan nitride. Thus, light incident on the surface of the semiconductor chip is prevented from reaching a substrate transistor within a semiconductor device and malfunctioning of the semiconductor device is prevented.
摘要翻译：最上面的金属布线层由形成在其上的钛钛和氮化钛TiN形成，其上可以沉积填充通孔的钨W。通孔用W填充。最上面的金属布线层下方的金属布线层的表面覆盖有由氮化钛制成的低反射率膜。因此，防止入射在半导体芯片的表面上的光到达半导体器件内的衬底晶体管，并且防止了半导体器件的故障。

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