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61. 发明授权

US08884493B2 Vibration generating device, driving method therefor, foreign substance removing device, and optical device 有权
标题翻译：振动发生装置及其驱动方法，异物去除装置及光学装置
公开(公告)号：US08884493B2
公开(公告)日：2014-11-11
申请号：US13176649
申请日：2011-07-05
申请人： Tatsuo Furuta , Kenichi Takeda , Toshihiro Ifuku , Makoto Kubota , Hiroshi Saito
发明人： Tatsuo Furuta , Kenichi Takeda , Toshihiro Ifuku , Makoto Kubota , Hiroshi Saito
IPC分类号： H01L41/09 , H01L41/187 , H02N2/00 , G02B27/00 , B08B7/02 , B06B1/02 , H01L41/43
CPC分类号： H02N2/008 , B06B1/0284 , B08B7/02 , G02B27/0006 , G03B2205/0061 , H01L41/187 , H01L41/43 , H02N2/0015
摘要： Provided is a vibration generating device in which more improvement of drive efficiency can be realized than conventional ones. The vibration generating device includes: a piezoelectric element including a piezoelectric material interposed between electrodes; a vibration member; a power source for applying an alternating voltage to the piezoelectric element; and a control section for controlling a frequency of the alternating voltage applied by the power source, in which the control section controls the frequency of the alternating voltage applied to the piezoelectric element so that the resonance frequency of the piezoelectric element is successively changed from low frequency side to high frequency side in a frequency range including a change range of a resonance frequency of the piezoelectric element.
摘要翻译：提供了一种振动产生装置，其中可以实现比常规驱动效率更高的驱动效率的提高。振动产生装置包括：压电元件，其包括介于电极之间的压电材料; 振动件; 用于向压电元件施加交流电压的电源; 以及控制部分，用于控制由电源施加的交流电压的频率，其中控制部分控制施加到压电元件的交流电压的频率，使得压电元件的谐振频率从低频在包括压电元件的谐振频率的变化范围的频率范围内的高频侧。

62. 发明申请

US20140117811A1 PIEZOELECTRIC ELEMENT, MULTILAYERED PIEZOELECTRIC ELEMENT, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE APPARATUS, ULTRASONIC MOTOR, OPTICAL APPARATUS, AND ELECTRONIC APPARATUS 有权
标题翻译：压电元件，多层压电元件，液体放电头，液体放电设备，超声波电机，光学设备和电子设备
公开(公告)号：US20140117811A1
公开(公告)日：2014-05-01
申请号：US14130671
申请日：2012-06-26
申请人： Jumpei Hayashi , Kenichi Takeda , Shinya Koyama , Kenichi Akashi , Tatsuo Furuta
发明人： Jumpei Hayashi , Kenichi Takeda , Shinya Koyama , Kenichi Akashi , Tatsuo Furuta
IPC分类号： H01L41/083 , B41J2/14
CPC分类号： H01L41/083 , B41J2/14201 , B41J2/14233 , B41J2202/03 , C04B35/4682 , C04B35/49 , C04B35/6261 , C04B35/62685 , C04B35/63416 , C04B2235/3208 , C04B2235/3215 , C04B2235/3236 , C04B2235/3244 , C04B2235/3248 , C04B2235/3262 , C04B2235/40 , C04B2235/449 , C04B2235/652 , C04B2235/6567 , C04B2235/6582 , C04B2235/6584 , C04B2235/72 , C04B2235/768 , C04B2235/77 , C04B2235/78 , C04B2235/785 , C04B2235/786 , C04B2235/79 , C04B2235/80 , C04B2235/85 , H01L41/09 , H01L41/0973 , H01L41/1871 , H02N2/106 , H02N2/163
摘要： A lead-free piezoelectric element that stably operates in a wide operating temperature range contains a lead-free piezoelectric material. The piezoelectric element includes a first electrode, a second electrode, and a piezoelectric material that includes a perovskite-type metal oxide represented by (Ba1-xCax)a(Ti1-yZry)O3 (1.00≦a≦1.01, 0.02≦x≦0.30, 0.020≦y≦0.095, and y≦x) as a main component and manganese incorporated in the perovskite-type metal oxide. The manganese content relative to 100 parts by weight of the perovskite-type metal oxide is 0.02 parts by weight or more and 0.40 parts by weight or less on a metal basis.
摘要翻译：在宽工作温度范围内稳定工作的无铅压电元件包含无铅压电材料。压电元件包括第一电极，第二电极和压电材料，其包括由（Ba1-xCax）a（Ti1-yZry）O3（1.00＆nlE; a＆nlE; 1.01,0.02＆nlE; x＆nlE）表示的钙钛矿型金属氧化物 ; 0.30，0.020＆nlE; y＆nlE; 0.095和y＆nlE; x）作为主要成分，掺入钙钛矿型金属氧化物中的锰。相对于100重量份的钙钛矿型金属氧化物的锰含量为0.02重量份以上且0.40重量份以下。

63. 再颁专利

USRE43660E1 Flow sensor using a heat element and a resistance temperature detector formed of a metal film 有权
标题翻译：使用热元件的流量传感器和由金属膜形成的电阻温度检测器
公开(公告)号：USRE43660E1
公开(公告)日：2012-09-18
申请号：US12805390
申请日：2010-07-28
申请人： Noriyuki Sakuma , Naoki Yamamoto , Kenichi Takeda , Hiroshi Fukuda
发明人： Noriyuki Sakuma , Naoki Yamamoto , Kenichi Takeda , Hiroshi Fukuda
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , G01F1/699 , G01P5/10
摘要： The present invention provides a technology capable of achieving a highly-sensitive flow sensor, by forming a metal film having a relatively high TCR on a semiconductor substrate via an insulating film. A measurement device which is a thermal fluid flow sensor includes a heat element, resistance temperature detectors (upstream-side resistance temperature detector and downstream-side resistance temperature detector), and a resistance temperature detector for air which are all formed of a first metal film. The first metal film is formed of an α-Ta film having a resistivity lower than three times the resistivity of a Ta ingot and obtained by deposition through sputtering on an amorphous film containing metal.
摘要翻译：本发明提供一种能够通过在绝缘膜上在半导体衬底上形成具有较高TCR的金属膜来实现高灵敏度的流量传感器的技术。作为热流体流量传感器的测量装置包括热元件，电阻温度检测器（上游侧电阻温度检测器和下游侧电阻温度检测器）以及空气的电阻温度检测器，全部由第一金属膜。第一金属膜由电阻率低于Ta锭的电阻率的三倍且通过溅射沉积在含有金属的非晶膜上获得的α-Ta膜形成。

64. 发明授权

US07947596B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07947596B2
公开(公告)日：2011-05-24
申请号：US11526754
申请日：2006-09-26
申请人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
发明人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
IPC分类号： H01L21/00
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76811 , H01L21/76813
摘要： A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.
摘要翻译：根据本发明的半导体器件包括其中形成有半导体元件的基板100，其外围表面的至少一部分由包含铜作为主要成分的材料制成的第一导体301和第一绝缘扩散阻挡层层203覆盖第一导体301的至少一部分。第一绝缘扩散阻挡层203通过使用至少含有由通式（RO）nSiH 4-n表示的烷氧基硅烷（n为整数）的气体混合物形成 1〜3的范围，R表示烷基，芳基或其衍生物）和通过等离子体CVD的氧化性气体。因此，可以提供包括具有高可靠性和较少布线延迟时间的铜布线的半导体器件。

65. 发明申请

US20100225712A1 INKJET HEAD AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：喷嘴头及其制造方法
公开(公告)号：US20100225712A1
公开(公告)日：2010-09-09
申请号：US12781218
申请日：2010-05-17
申请人： Takehito Okabe , Nobuhiko Sato , Makoto Kurotobi , Kenichi Takeda , Toshihiro Ifuku
发明人： Takehito Okabe , Nobuhiko Sato , Makoto Kurotobi , Kenichi Takeda , Toshihiro Ifuku
IPC分类号： B41J2/045
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1626 , Y10T29/42 , Y10T29/49126 , Y10T29/49128 , Y10T29/4913 , Y10T29/49401
摘要： A method for manufacturing an inkjet head includes providing a piezoelectric substrate having a porous structure, a diaphragm on the porous structure, and a piezoelectric substance layer on the diaphragm, and forming a cavity by etching out the porous structure from the piezoelectric substrate.
摘要翻译：一种制造喷墨头的方法包括：提供具有多孔结构的压电基片，多孔结构上的光阑以及隔膜上的压电物质层，通过从压电基片上蚀刻出多孔结构而形成空腔。

66. 发明授权

US07667955B2 Liquid crystal display 失效
标题翻译：液晶显示器
公开(公告)号：US07667955B2
公开(公告)日：2010-02-23
申请号：US11366219
申请日：2006-03-02
申请人： Kenichi Takeda
发明人： Kenichi Takeda
IPC分类号： G06F1/16
CPC分类号： G06F1/1601
摘要： In a liquid crystal display, an enclosure is formed by detachably fitting a synthetic resin-made front enclosure including a liquid crystal panel with a synthetic resin-made rear enclosure, and the enclosure is fitted upright to a stand by drilling a substantially U-shaped stand hole in the middle of a bottom plate of the rear enclosure. Further, the stand is attached to the exterior casing of the liquid crystal panel by screws, the stand in the stand hole is removably formed on the outside of the rear enclosure through the cutout portion by forming the cutout portion reaching the stand hole from the edge of the bottom plate at the bottom plate of the rear enclosure 1B, and a sealing plate for sealing the cutout portion integrally protrudes from the central portion of the edge of the bottom plate of the front enclosure.
摘要翻译：在液晶显示器中，通过将合成树脂制的前壳体与合成树脂制成的后壳体可拆卸地装配在一起而形成外壳，该外壳通过钻出基本上U形后部外壳底板中间的支架孔。此外，通过螺钉将支架安装在液晶面板的外壳上，通过形成从边缘到达支座的切口部分，可拆卸地在支座的外侧通过切口部分形成立柱上的支架并且用于密封切口部的密封板与前壳体的底板的边缘的中心部分一体地突出。

67. 发明申请

US20070273627A1 LIQUID CRYSTAL DISPLAY DEVICE 失效
标题翻译：液晶显示装置
公开(公告)号：US20070273627A1
公开(公告)日：2007-11-29
申请号：US11751210
申请日：2007-05-21
申请人： Kenichi Takeda
发明人： Kenichi Takeda
IPC分类号： G09G3/36
CPC分类号： G11B31/02 , G06F1/1626 , G06F1/1658 , H04N5/64
摘要： A liquid crystal display device includes a liquid crystal module, a disk drive and a wiring board. The liquid crystal module has protrusions formed on a back plate of the liquid crystal module. The disk drive has attachment components aligned with the protrusions and fixed to the protrusions. The wiring board is disposed between the liquid crystal module and the disk drive. The wiring board has holes into which the protrusions are inserted.
摘要翻译：液晶显示装置包括液晶模块，磁盘驱动器和布线板。液晶模块具有形成在液晶模块的背板上的突起。磁盘驱动器具有与突起对准的固定部件并且固定到突出部。布线板设置在液晶模块和磁盘驱动器之间。布线板具有插入突起的孔。

68. 发明申请

US20070255628A1 Ordering support system, ordering support apparatus, device monitoring apparatus, ordering support method, device monitoring method, and computer-readable medium 审中-公开
标题翻译：订购支持系统，订购支持设备，设备监控设备，订购支持方式，设备监控方式和计算机可读介质
公开(公告)号：US20070255628A1
公开(公告)日：2007-11-01
申请号：US11785544
申请日：2007-04-18
申请人： Masato Takahashi , Keiji Nagai , Yutaka Nakamura , Koji Dan , Kenichi Takeda , Shogo Hyakutake , Fujio Takahashi
发明人： Masato Takahashi , Keiji Nagai , Yutaka Nakamura , Koji Dan , Kenichi Takeda , Shogo Hyakutake , Fujio Takahashi
IPC分类号： G06Q30/00
CPC分类号： G06Q30/06 , G06Q30/0601
摘要： An ordering support system is disclosed. The ordering support system includes a device monitoring apparatus that retrieves a device information item about a device connected to a network and a status information item about a consumable of the device, determines whether the consumable is depleted based on the status information item, and sends, if the consumable is determined to be depleted, the device information item and the status information item to an ordering support apparatus. The ordering support system further includes the ordering support apparatus that receives the device information item and the status information item from the device monitoring apparatus, creates an electronic mail message including a URL indicating a Web page for ordering the consumable determined to be depleted, and sends the electronic mail message to a pre-registered mail address associated with the device.
摘要翻译：公开了订购支持系统。订购支持系统包括检索关于与网络连接的设备的设备信息项和关于设备的消耗品的状态信息项的设备监控设备，基于状态信息项确定消耗品是否耗尽，如果消耗品被确定为耗尽，则将设备信息项和状态信息项提供给订购支持设备。订购支持系统还包括从设备监控设备接收设备信息项和状态信息项的订购支持设备，创建一个电子邮件消息，该电子邮件消息包括指示用于排序被确定要耗尽的耗材的网页的URL，并发送电子邮件消息发送到与设备相关联的预先登记的邮件地址。

69. 发明授权

US07247890B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07247890B2
公开(公告)日：2007-07-24
申请号：US10931119
申请日：2004-09-01
申请人： Tomoko Sekiguchi , Shinichiro Kimura , Renichi Yamada , Kikuo Watanabe , Hiroshi Miki , Kenichi Takeda
发明人： Tomoko Sekiguchi , Shinichiro Kimura , Renichi Yamada , Kikuo Watanabe , Hiroshi Miki , Kenichi Takeda
IPC分类号： H01L31/0328 , H01L29/80
CPC分类号： H01L29/66659 , H01L27/10855 , H01L27/10873 , H01L27/10894 , H01L29/1079 , H01L29/6656 , H01L29/7835
摘要： Disclosed is herein a semiconductor device having a DRAM with less scattering of threshold voltage of MISFET in a memory cell and having good charge retainability of a capacitor, and a manufacturing method of the semiconductor device. An anti-oxidation film is formed to the side wall of a gate electrode before light oxidation thereby suppressing the oxidation of the side wall for the gate electrode and decreasing scattering of the thickness of the film formed to the sidewall in an asymmetric diffusion region structure in which the impurity concentration of an n-type semiconductor region and a p-type semiconductor region on the side of the data line is made relatively higher than the impurity concentration in the n-type semiconductor region and p-type semiconductor region on the side of the capacitor, respectively.
摘要翻译：这里公开了具有在存储单元中具有MISFET阈值电压的较小散射并具有良好的电容保持性的DRAM的半导体器件，以及半导体器件的制造方法。在光氧化之前，在栅电极的侧壁上形成抗氧化膜，从而抑制栅电极的侧壁的氧化，并且在不对称扩散区域结构中减少形成在侧壁上的膜的厚度的散射使数据线一侧的n型半导体区域和p型半导体区域的杂质浓度比n型半导体区域和p型半导体区域的杂质浓度相对高于电容器。

70. 发明申请

US20070018330A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070018330A1
公开(公告)日：2007-01-25
申请号：US11526754
申请日：2006-09-26
申请人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
发明人： Kenichi Takeda , Daisuke Ryuzaki , Kenji Hinode , Toshiyuki Mine
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L21/76834 , H01L21/76801 , H01L21/76811 , H01L21/76813
摘要： A semiconductor device according to this invention comprises a substrate 100 in which semiconductor elements are formed, a first conductor 301 at least a portion of the peripheral surface of which is made of a material comprising copper as a main ingredient, and a first insulative diffusion barrier layer 203 covering at least a portion of the first conductor 301. The first insulative diffusion barrier layer 203 is formed by using a gas mixture at least containing an alkoxy silane represented by the general formula (RO)nSiH4−n (n is an integer in a range from 1 to 3, R represents an alkyl group, an aryl group or a derivative thereof), and an oxidative gas by a plasma CVD. Thus, a semiconductor device comprising copper wiring of high reliability and with less wiring delay time can be provided.
摘要翻译：根据本发明的半导体器件包括其中形成有半导体元件的基板100，其外围表面的至少一部分由包含铜作为主要成分的材料制成的第一导体301和第一绝缘扩散阻挡层层203覆盖第一导体301的至少一部分。第一绝缘扩散阻挡层203通过使用至少含有由通式（RO）表示的烷氧基硅烷的气体混合物形成（n为 1〜3的整数，R表示烷基，芳基或其衍生物）和通过等离子体CVD的氧化性气体。因此，可以提供包括高可靠性和较少布线延迟时间的铜布线的半导体器件。

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