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    • 10. 发明授权
    • Method of manufacturing photoelectric conversion device
    • 制造光电转换装置的方法
    • US08293559B2
    • 2012-10-23
    • US13161959
    • 2011-06-16
    • Takehito OkabeHiroaki NaruseRyuichi MishimaKouhei Hashimoto
    • Takehito OkabeHiroaki NaruseRyuichi MishimaKouhei Hashimoto
    • H01L21/00
    • H01L27/14687H01L21/28518H01L27/14632
    • In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier.
    • 在制造具有像素区域和外围电路区域的光电转换装置的方法中,通过使外围电路区域中的MOS晶体管的扩散层或栅电极的表面与高电位反应来形成半导体化合物层 熔点金属,则在形成半导体化合物层的步骤之后,在像素区域和外围电路区域中形成绝缘层。 在绝缘层中形成接触孔,以露出像素区域中的扩散层,并且在绝缘层中形成接触孔以暴露形成在外围电路区域中的半导体化合物层。 这些孔在不同的时刻形成。 在形成稍后形成的孔之前,在较早形成的接触孔中形成接触塞。