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    • 61. 发明授权
    • Random number generating device
    • 随机数生成装置
    • US08521795B2
    • 2013-08-27
    • US12452012
    • 2008-03-24
    • Akio FukushimaHitoshi KubotaKay YakushijiShinji YuasaKoji Ando
    • Akio FukushimaHitoshi KubotaKay YakushijiShinji YuasaKoji Ando
    • G06F7/58
    • G06F7/588
    • A random number generating device is constructed such that it has improved random number generation rate and allows for construction of compact circuit with ease.The random number generating device includes a magnetoresistive element that has three layers consisting of a magnetization free layer, an interlayer, and a magnetization fixed layer, and has at least two resistance values depending on arrangement of magnetization in the magnetization free layer and the magnetization fixed layer, wherein the magnetoresistive element is subjected to be applied with a magnetization current so that the inversion probability of the magnetization free layer assumes a value between 0 and 1, through which the resistance value of the magnetoresistive element is extracted as random numbers.
    • 构造随机数生成装置,使其具有改善的随机数生成速率并且容易地构造紧凑电路。 该随机数生成装置包括具有由磁化自由层,中间层和磁化固定层构成的三层的磁致电阻元件,并且具有取决于磁化自由层的磁化排列和磁化固定的至少两个电阻值 层,其中磁阻元件经受施加磁化电流,使得磁化自由层的反转概率为0和1之间的值,磁阻元件的电阻值通过该值提取为随机数。
    • 68. 发明授权
    • Manufacturing method of semiconductor substrate and method and apparatus for inspecting defects of patterns of an object to be inspected
    • 半导体基板的制造方法以及检查被检查体的图案的缺陷的方法和装置
    • US07180584B2
    • 2007-02-20
    • US10686584
    • 2003-10-17
    • Shunji MaedaYasuhiko NakayamaMinoru YoshidaHitoshi KubotaKenji Oka
    • Shunji MaedaYasuhiko NakayamaMinoru YoshidaHitoshi KubotaKenji Oka
    • G01N21/00
    • G01N21/8806G01N21/9501G01N21/956G01N21/95607G01N2021/95615G01N2201/0618G01N2201/0634
    • A pattern detection method and apparatus thereof for inspecting with high resolution a micro fine defect of a pattern on an inspected object and a semiconductor substrate manufacturing method and system for manufacturing semiconductor substrates such as semiconductor wafers with a high yield. A micro fine pattern on the inspected object is inspected by irradiating an annular-looped illumination through an objective lens onto a wafer mounted on a stage, the wafer having micro fine patterns thereon. The illumination light may be circularly or elliptically polarized and controlled according to an image detected on the pupil of the objective lens and image signals are obtained by detecting a reflected light from the wafer. The image signals are compared with reference image signals and a part of the pattern showing inconsistency is detected as a defect so that simultaneously, a micro fine defect or defects on the micro fine pattern are detected with high resolution. Further, process conditions of a manufacturing line are controlled by analyzing a cause of defect and a factor of defect which occurs on the pattern.
    • 一种用于以高分辨率检查被检查物体上的图案的微细缺陷的图案检测方法及其装置以及以高产率制造半导体晶片等半导体基板的半导体基板的制造方法和系统。 通过将通过物镜的环形照明照射到安装在台架上的晶片上,检查被检查物体上的微细图案,晶片上具有微细精细图案。 照明光可以根据在物镜的光瞳上检测到的图像而被圆形或椭圆偏振并且被控制,并且通过检测来自晶片的反射光来获得图像信号。 将图像信号与参考图像信号进行比较,并且检测出显示不一致的图案的一部分作为缺陷,从而同时以高分辨率检测微细微图案或微细图案上的缺陷。 此外,通过分析缺陷的原因和在图案上发生的缺陷因素来控制生产线的工艺条件。
    • 69. 发明申请
    • Electronic device and wiring with a current induced cooling effect, and an electronic device capable of converting a temperature difference into voltage
    • 具有电流感应冷却效果的电子设备和布线以及能够将温差转换为电压的电子设备
    • US20060056113A1
    • 2006-03-16
    • US11221863
    • 2005-09-09
    • Akio FukushimaHitoshi KubotaAtsushi Yamamoto
    • Akio FukushimaHitoshi KubotaAtsushi Yamamoto
    • G11B5/33G11B5/127
    • G11C11/16G11B5/3903G11B5/40H01L23/38H01L43/08H01L2924/0002Y10T428/1193H01L2924/00
    • Localized temperature increases inside integrated circuits due to heating at operation are prevented or controlled by electronic devices or wirings with CPP (current-perpendicular-to-plane) structure which has a current cooling effect. The CPP structure refers to a structure comprising a columnar electrically conductive portion and an insulator portion surrounding the conductive portion. The columnar portion is formed from the multilayered structure in a direction perpendicular to the plane of the layers, so as to allow a current to flow from an upper layer to a lower layer (or vice versa). The cooling effect is induced by current at the interface (or a plural of interfaces) of appropriately selected different kinds of materials (which are conductive substances in general, such as metals, semiconductors, and alloys thereof) in the columnar portion due to the Peltier effect when a current flows through the column. Temperature in minute range is detected by thermocouple with CPP structure. The thermocouple has two interfaces of different materials with a proper combination. When a temperature difference exists between two interfaces, a voltage which corresponds to product of the temperature difference and the Peltier coefficient at the interface is produced. In the same manner, the intensity of inferred can be also measured.
    • 通过具有电流冷却效果的具有CPP(电流 - 垂直 - 平面)结构的电子设备或配线来防止或控制由于操作中的加热而导致集成电路内的局部温度升高。 CPP结构是指包括柱状导电部分和围绕导电部分的绝缘体部分的结构。 柱状部分由垂直于层平面的方向由多层结构形成,从而允许电流从上层流向下层(反之亦然)。 由于珀尔帖(Peltier),在柱状部分中适当选择的不同种类的材料(通常为导电物质,例如金属,半导体及其合金)的界面(或多个界面)处的电流引起了冷却效应。 当电流流过色谱柱时产生影响。 微波范围内的温度由具有CPP结构的热电偶检测。 热电偶具有不同材料的两个接口,并具有适当的组合。 当两个界面之间存在温差时,产生与界面上的温差和珀耳帖系数的乘积相对应的电压。 以同样的方式,推测的强度也可以测量。