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61. 发明申请

US20070077015A1 Optical device having photonic crystal structure 失效
标题翻译：具有光子晶体结构的光学器件
公开(公告)号：US20070077015A1
公开(公告)日：2007-04-05
申请号：US11365820
申请日：2006-03-02
申请人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
发明人： Tsuyoshi Aoki , Masao Kondo , Kazuaki Kurihara
IPC分类号： G02B6/02 , G02B6/032
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/2937 , G02F1/011 , G02F1/0126 , G02F1/0147 , G02F1/0338 , G02F1/035 , G02F1/0541 , G02F1/0558 , G02F1/065 , G02F1/3515 , G02F1/3553 , G02F2202/32 , G02F2203/01
摘要： A photonic crystal structural body has a structure that a second mediums whose refractive index changes with an external field is periodically distributed in a first medium whose refractive index changes with the external field. An external field generator applies the external field to the photonic crystal structural body. It is possible to increase a change amount of a photonic band gap.
摘要翻译：光子晶体结构体具有折射率随外部场变化的第二介质周期性地分布在其折射率随外部场变化的第一介质中的结构。外部场发生器将外部场域应用于光子晶体结构体。可以增加光子带隙的变化量。

62. 发明申请

US20070045595A1 Capacitative element, integrated circuit and electronic device 审中-公开
标题翻译：电容元件，集成电路和电子设备
公开(公告)号：US20070045595A1
公开(公告)日：2007-03-01
申请号：US11590768
申请日：2006-11-01
申请人： Masao Kondo
发明人： Masao Kondo
IPC分类号： H01B1/12
CPC分类号： H01L27/11502 , C04B35/26
摘要： The present invention provides a capacitive element comprising BiFeO3 having particular cations other than Bi ions or Fe ions at the Bi ion sites or Fe ion sites of a crystal lattice, along with an electronic device and the like using that capacitive element. According to the present invention, it is possible to achieve a high-performance electronic device which has a large recording density and which is environmentally friendly because it contains no lead.
摘要翻译：本发明提供了一种电容元件，其包含BiFeO 3 3，其具有除了Bi离子之外的特定阳离子或晶格的Bi离子位点或Fe离子位置处的Fe离子，以及电子器件等，其使用那个电容元件。根据本发明，可以实现具有大的记录密度并且由于不含铅而具有环境友好性的高性能电子器件。

63. 发明申请

US20070034558A1 Nitrification system and method 失效
公开(公告)号：US20070034558A1
公开(公告)日：2007-02-15
申请号：US11497764
申请日：2006-08-02
申请人： Masao Kondo
发明人： Masao Kondo
IPC分类号： C02F3/12
CPC分类号： C02F3/223 , C02F3/12 , C02F2101/16 , Y02W10/15
摘要： A system reduces ammonia within a fluid flow. The system includes an aeration vessel, a clarifier vessel, and a geyser pump. The aeration vessel nitrifies bacteria within the fluid flow. The aeration vessel has an intake flow rate. The clarifier vessel receives fluid from the aeration vessel. The geyser pump transfers activated sludge from the clarifier vessel to the aeration vessel. The geyser pump transfers activated sludge at a specific flow rate. The specific flow rate is less than 150% of the intake flow rate.

64. 发明申请

US20060131627A1 Ferroelectric material, its manufacture method and ferroelectric memory 审中-公开
标题翻译：铁电材料，其制造方法和铁电存储器
公开(公告)号：US20060131627A1
公开(公告)日：2006-06-22
申请号：US11106529
申请日：2005-04-15
申请人： Masao Kondo , Kenji Maruyama , Risako Ueno , Hiroshi Funakubo , Hiroshi Uchida , Seiichiro Koda , Hiroshi Nakaki
发明人： Masao Kondo , Kenji Maruyama , Risako Ueno , Hiroshi Funakubo , Hiroshi Uchida , Seiichiro Koda , Hiroshi Nakaki
IPC分类号： H01L29/94 , H01L29/76 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/02197 , C23C18/1216 , C23C18/1275 , H01L21/02282 , H01L21/02337 , H01L21/02356 , H01L21/31691 , H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/56
摘要： BiFeO3 precursor solution is coated on the surface of an underlying member. Teat treatment is performed after the coating to form a dielectric film. The dielectric film is heated in a non-oxidizing atmosphere to crystallize the dielectric film. With this method, a ferroelectric material can be obtained which contains constituent elements of Bi, Fe and O and has crystal lattice of a tetragonal or orthorhombic system.
摘要翻译： BiFeO 3 3前体溶液涂覆在底层构件的表面上。在涂覆之后进行乳液处理以形成电介质膜。电介质膜在非氧化性气氛中加热，使电介质膜结晶。通过这种方法，可以获得含有Bi，Fe和O的构成元素并具有四方晶系或斜方晶系的晶格的铁电体材料。

65. 发明申请

US20060092498A1 Optical element 失效
标题翻译：光学元件
公开(公告)号：US20060092498A1
公开(公告)日：2006-05-04
申请号：US11062591
申请日：2005-02-23
申请人： Keisuke Sato , Masao Kondo
发明人： Keisuke Sato , Masao Kondo
IPC分类号： G02F1/00
CPC分类号： G02F1/035 , G02F1/055
摘要： An optical waveguide is formed of a stack of electro-optic effect films. A stress-relief layer is formed between a substrate and the optical waveguide. The stress-relief layer is comprised of a metal material having a thermal expansion coefficient of 10×10−6/° C. or higher, for example, a metal material whose major component is one of Au, Ag, and an alloy thereof, and has a function of relieving a binding force to the optical waveguide ascribable to the substrate.
摘要翻译：光波导由一组电光效应膜形成。在基板和光波导之间形成有应力消除层。应力消除层由热膨胀系数为10×10 -6 /℃以上的金属材料构成，例如主要成分为Au，Ag，及其合金，具有缓解对归属于基板的光波导的结合力的功能。

66. 发明申请

US20060073664A1 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20060073664A1
公开(公告)日：2006-04-06
申请号：US11242961
申请日：2005-10-05
申请人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
发明人： Masao Kondo , Nobuyuki Sugii , Yoshinobu Kimura
IPC分类号： H01L21/336
CPC分类号： H01L29/7835 , H01L29/1054 , H01L29/165 , H01L29/6659 , H01L29/66659
摘要： Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×1019 cm−3 or less.
摘要翻译：提供了能够抑制形成在应变硅层中的沟道区域中的电子迁移率降低的技术。在半导体衬底上形成的p型硅 - 锗层上形成p型应变硅层。 p型应变层的厚度被调整为比没有失配位错发生的临界膜厚度更厚。因此，在p型应变硅层和p型硅 - 锗层之间的界面附近发生失配位错。在位于栅电极末端并发生失配位错的位置处，n型应变硅层和n型硅 - 锗层的杂质浓度为1×10 19 cm -3， -3以下。

67. 发明授权

US06974977B2 Heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US06974977B2
公开(公告)日：2005-12-13
申请号：US10457428
申请日：2003-06-10
申请人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
发明人： Katsuyoshi Washio , Reiko Hayami , Hiromi Shimamoto , Masao Kondo , Katsuya Oda , Eiji Oue , Masamichi Tanabe
IPC分类号： H01L29/72 , G02B6/42 , H01L21/331 , H01L29/737 , H03F3/45
CPC分类号： H01L29/66242 , G02B6/4251 , G02B6/4274 , H01L29/7375 , H01L29/7378 , H03F3/45085 , H03F3/45089 , H03F2200/372 , H03F2203/45311 , H03F2203/45574 , H03F2203/45612 , H03F2203/45652 , H03F2203/45722
摘要： A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.
摘要翻译：提供了具有高可靠性和高增益的双极晶体管，并且特别适用于高速运行。双极晶体管以高精度工作，即使在集电极电压变化时也不会对集电极电流产生实质性的变化。与传统的集电极电流双极晶体管相比，它具有较小的变化，同时确保了高速性能和高增益。在一个示例中，基极区域中的带隙小于发射极和集电极区域中的带隙。带隙在与发射极区域的结点附近是恒定的，并且朝着与集电极区域的结点减小。单晶硅/锗通常用于基极区域。

68. 发明申请

US20050162595A1 Optical deflection element and method of producing the same 审中-公开
标题翻译：光偏转元件及其制造方法
公开(公告)号：US20050162595A1
公开(公告)日：2005-07-28
申请号：US11085556
申请日：2005-03-22
申请人： Masao Kondo , Hideki Yamawaki
发明人： Masao Kondo , Hideki Yamawaki
IPC分类号： G02F1/055 , G02F1/1337 , G02F1/295
CPC分类号： G02F1/055 , G02F1/0553 , G02F1/295
摘要： A disclosed optical deflection element includes a magnesia spinel film 22, a lower electrode 23, a lower cladding layer 24, a core layer 25, and an upper cladding layer 26, which are sequentially stacked formed on a silicon single crystal substrate 21. The magnesia spinel film 22, the lower electrode 23, a PLZT film acting as the lower cladding layer 24, and a PZT film acting as the core layer 25 are epitaxially grown on respective underlying layers thereof. Because of a voltage applied between the lower electrode 23 and the upper electrode 26, refractive index variable regions 25A, 24A, in which the refractive index varies, are formed due to the electro-optical effect. Light incident into the core layer 25 is deflected at the interface between the core layer 25 and the refractive index variable regions 25A, 24A to the inner side relative to the surface of the core layer 25.
摘要翻译：所公开的光偏转元件包括依次层叠形成在硅单晶基板21上的氧化镁尖晶石膜22，下电极23，下包层24，芯层25和上包层26。将氧化镁尖晶石膜22，下电极23，作为下包层24的PLZT膜和作为芯层25的PZT膜外延生长在其各自的下层上。由于电光效应，由于施加在下电极23和上电极26之间的电压，折射率变化的折射率可变区域25A，24A形成。入射到芯层25的光在芯层25和折射率可变区域25A，24A之间的界面处相对于芯层25的表面向内侧偏转。

69. 发明授权

US06846979B2 Musical performance data search system 有权
标题翻译：音乐表演数据搜索系统
公开(公告)号：US06846979B2
公开(公告)日：2005-01-25
申请号：US10080357
申请日：2002-02-20
申请人： Masao Kondo
发明人： Masao Kondo
IPC分类号： G06F17/30 , G10H1/00 , G10K15/02 , G10K15/04 , A63H5/00 , G04B13/00 , G10H7/00
CPC分类号： G10H1/0041 , G10H2240/081 , G10H2240/131
摘要： A search list of records is displayed on a display screen DP. Some records may have the same music title as one item, but are different in other items (genre, rhythm, tempo and the like). A favorite list can be formed by a selection process using a mark FMa (reversible by a favorite switch ST0) on each record. A first or second list can be formed by a search process after a search switch SM5 or ST5 is operated. A desired list is selected by using list selection switches ST1 to ST4 and a desired record is designated by a cursor CR to decide a style. The cursor CR can be moved by one record after another by a normal cursor motion switch SM2 or SM3, and jumped to a record group having different item contents by a special cursor motion switch SM1 or SM4.
摘要翻译：记录的搜索列表显示在显示屏DP上。一些记录可能具有与一个项目相同的音乐标题，但在其他项目（类型，节奏，速度等）中是不同的。可以通过使用每个记录上的标记FMa（由喜爱的开关ST0可逆）的选择处理来形成最喜爱的列表。在搜索开关SM5或ST5被操作之后，可以通过搜索处理来形成第一或第二列表。通过使用列表选择开关ST1至ST4选择期望的列表，并且由光标CR指定期望的记录以确定样式。光标CR可以由普通光标移动开关SM2或SM3移动一个记录，并通过特殊光标移动开关SM1或SM4跳到具有不同项目内容的记录组。

70. 发明授权

US06747317B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06747317B2
公开(公告)日：2004-06-08
申请号：US10093519
申请日：2002-03-11
申请人： Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
发明人： Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
IPC分类号： H01L2701
CPC分类号： H01L21/02266 , C23C14/28 , C30B23/02 , C30B25/18 , C30B29/32 , H01L21/02197 , H01L21/02293 , H01L21/02304 , H01L21/31691
摘要： The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.
摘要翻译：本发明提供一种包括单晶硅衬底的半导体器件; 以及在单晶硅衬底上通过外延生长形成具有钙钛矿结构的单晶氧化物薄膜。单晶氧化物薄膜直接与单晶硅衬底的表面接触，并且含有与硅反应的二价金属。

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