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    • 9. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    • 半导体存储器件及其制造方法
    • US20090050949A1
    • 2009-02-26
    • US12239892
    • 2008-09-29
    • Kenji MARUYAMAMasao KondoKeisuke Sato
    • Kenji MARUYAMAMasao KondoKeisuke Sato
    • H01L27/115H01L21/8246
    • H01L21/28291G11C11/22H01L29/516H01L29/6684H01L29/78391H01L43/06
    • The present invention is to provide a semiconductor memory device capable of providing excellent storage properties, scaling and high integration and a method of fabricating the same. A semiconductor memory device has a multiferroic film exhibiting ferroelectricity and ferromagnetism, a channel region on an interface of a semiconductor substrate below the multiferroic film, source and drain regions formed on both sides of the channel region, a gate electrode (data write electrode) applying gate voltage to the multiferroic film to write data in such a way that the orientation of magnetization is changed as corresponding to the orientation of dielectric polarization, and source and drain electrodes (data read electrodes) that read data based on a deviation in a flow of the carrier, the deviation caused by applying the Lorentz force to the carrier flowing in the channel region from a magnetic field occurring in the channel region because of magnetization.
    • 本发明提供能够提供优异的存储特性,缩放和高集成度的半导体存储器件及其制造方法。 半导体存储器件具有显示铁电性和铁磁性的多铁性膜,在多铁性膜下方的半导体衬底的界面上的沟道区,形成在沟道区两侧的源极和漏极区,施加了栅电极(数据写入电极) 栅极电压到多层膜以这样的方式写入数据,使得磁化的取向对应于介电极化的取向而变化,以及源极和漏极(数据读取电极),其基于流动的偏差读取数据 载体,由于由于磁化而从在沟道区域中发生的磁场向在沟道区域中流动的载流子施加洛伦兹力所引起的偏差。