专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060131627A1 Ferroelectric material, its manufacture method and ferroelectric memory 审中-公开
标题翻译：铁电材料，其制造方法和铁电存储器
公开(公告)号：US20060131627A1
公开(公告)日：2006-06-22
申请号：US11106529
申请日：2005-04-15
申请人： Masao Kondo , Kenji Maruyama , Risako Ueno , Hiroshi Funakubo , Hiroshi Uchida , Seiichiro Koda , Hiroshi Nakaki
发明人： Masao Kondo , Kenji Maruyama , Risako Ueno , Hiroshi Funakubo , Hiroshi Uchida , Seiichiro Koda , Hiroshi Nakaki
IPC分类号： H01L29/94 , H01L29/76 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L21/02197 , C23C18/1216 , C23C18/1275 , H01L21/02282 , H01L21/02337 , H01L21/02356 , H01L21/31691 , H01L27/11502 , H01L27/11585 , H01L27/1159 , H01L28/56
摘要： BiFeO3 precursor solution is coated on the surface of an underlying member. Teat treatment is performed after the coating to form a dielectric film. The dielectric film is heated in a non-oxidizing atmosphere to crystallize the dielectric film. With this method, a ferroelectric material can be obtained which contains constituent elements of Bi, Fe and O and has crystal lattice of a tetragonal or orthorhombic system.
摘要翻译： BiFeO 3 3前体溶液涂覆在底层构件的表面上。在涂覆之后进行乳液处理以形成电介质膜。电介质膜在非氧化性气氛中加热，使电介质膜结晶。通过这种方法，可以获得含有Bi，Fe和O的构成元素并具有四方晶系或斜方晶系的晶格的铁电体材料。

2. 发明授权

US07674634B2 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US07674634B2
公开(公告)日：2010-03-09
申请号：US10532249
申请日：2003-11-05
申请人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
发明人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
IPC分类号： H01L21/8246
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing Pb and having a plane (111) 11 in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together.The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.
摘要翻译：通过在具有适于生长表面的单晶衬底10上形成具有平面（111）的铁电单晶薄膜层，铁电单结晶含有Pb的具有与基板表面平行的平面（111）11的薄膜12'（或含有Pb的铁电体多晶薄膜，与基板的表面平行取向平行），以及半导体器件的电路的第16部分，从而制造具有含有Pb的所述铁电薄膜和所述半导体器件的所述电路的所述部分的单晶衬底10; 并将所述单晶衬底10预先连接到其上形成有半导体器件的另一电路的另一衬底上，以将两个电路耦合在一起。由此得到的半导体装置中的电容器具有大量的极化电荷的铁电薄膜。半导体器件可以用作高度可靠的非易失性存储器。

3. 发明授权

US06943397B2 Device having capacitor and its manufacture 有权
标题翻译：具有电容器及其制造的装置
公开(公告)号：US06943397B2
公开(公告)日：2005-09-13
申请号：US10647246
申请日：2003-08-26
申请人： Masao Kondo , Hideki Yamawaki , Kenji Maruyama , Kazuaki Kurihara , Masaharu Hida , Shigeyoshi Umemiya , Masaki Kurasawa
发明人： Masao Kondo , Hideki Yamawaki , Kenji Maruyama , Kazuaki Kurihara , Masaharu Hida , Shigeyoshi Umemiya , Masaki Kurasawa
IPC分类号： H01L27/04 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8246 , H01L27/105 , H01L41/08 , H01L41/09 , H01L41/18 , H01L41/22 , H01L41/29 , H01L41/318 , H03H3/08 , H03H9/02 , H01L29/76
CPC分类号： H01L28/55 , H01L21/31691 , H01L28/60 , H03H9/02574
摘要： A device having a capacitor element includes: an underlying body having a non-orientated first surface; a lower electrode formed on the first surface of the underlying body, the lower electrode containing conductive metal oxide and not containing noble metal, such as LaNiO3, the conductive metal oxide having a (0 0 1) orientated ABO3 type pervskite structure; a ferroelectric layer formed on the lower electrode, having a rhombohedral ABO3 type pervskite structure, the ferroelectric layer being preferentially (0 0 1) orientated in conformity with the orientation of the lower electrode, and an upper electrode formed on the ferroelectric layer.
摘要翻译：具有电容器元件的器件包括：具有非取向第一表面的下体; 形成在下体的第一表面上的下电极，下电极包含导电金属氧化物，不含贵金属，例如LaNiO 3，导电金属氧化物具有（0 1）取向 ABO 3型钙钛矿结构; 形成在下电极上的具有菱形ABO 3型钙钛矿结构的铁电层，所述铁电层优选（0 1）与所述下电极的取向一致，所述上电极形成在铁电层上。

4. 发明授权

US06747317B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06747317B2
公开(公告)日：2004-06-08
申请号：US10093519
申请日：2002-03-11
申请人： Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
发明人： Masao Kondo , Kazuaki Kurihara , Kenji Maruyama , Hideki Yamawaki
IPC分类号： H01L2701
CPC分类号： H01L21/02266 , C23C14/28 , C30B23/02 , C30B25/18 , C30B29/32 , H01L21/02197 , H01L21/02293 , H01L21/02304 , H01L21/31691
摘要： The present invention provides a semiconductor device comprising a single-crystal silicon substrate; and a single-crystal oxide thin film having a perovskite structure formed through epitaxial growth on the single-crystal silicon substrate. The single-crystal oxide thin film is directly in contact with a surface of the single-crystal silicon substrate, and contains a bivalent metal that is reactive to silicon.
摘要翻译：本发明提供一种包括单晶硅衬底的半导体器件; 以及在单晶硅衬底上通过外延生长形成具有钙钛矿结构的单晶氧化物薄膜。单晶氧化物薄膜直接与单晶硅衬底的表面接触，并且含有与硅反应的二价金属。

5. 发明申请

US20090050949A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20090050949A1
公开(公告)日：2009-02-26
申请号：US12239892
申请日：2008-09-29
申请人： Kenji MARUYAMA , Masao Kondo , Keisuke Sato
发明人： Kenji MARUYAMA , Masao Kondo , Keisuke Sato
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L21/28291 , G11C11/22 , H01L29/516 , H01L29/6684 , H01L29/78391 , H01L43/06
摘要： The present invention is to provide a semiconductor memory device capable of providing excellent storage properties, scaling and high integration and a method of fabricating the same. A semiconductor memory device has a multiferroic film exhibiting ferroelectricity and ferromagnetism, a channel region on an interface of a semiconductor substrate below the multiferroic film, source and drain regions formed on both sides of the channel region, a gate electrode (data write electrode) applying gate voltage to the multiferroic film to write data in such a way that the orientation of magnetization is changed as corresponding to the orientation of dielectric polarization, and source and drain electrodes (data read electrodes) that read data based on a deviation in a flow of the carrier, the deviation caused by applying the Lorentz force to the carrier flowing in the channel region from a magnetic field occurring in the channel region because of magnetization.
摘要翻译：本发明提供能够提供优异的存储特性，缩放和高集成度的半导体存储器件及其制造方法。半导体存储器件具有显示铁电性和铁磁性的多铁性膜，在多铁性膜下方的半导体衬底的界面上的沟道区，形成在沟道区两侧的源极和漏极区，施加了栅电极（数据写入电极）栅极电压到多层膜以这样的方式写入数据，使得磁化的取向对应于介电极化的取向而变化，以及源极和漏极（数据读取电极），其基于流动的偏差读取数据载体，由于由于磁化而从在沟道区域中发生的磁场向在沟道区域中流动的载流子施加洛伦兹力所引起的偏差。

6. 发明授权

US07893473B2 Semiconductor memory device and method of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07893473B2
公开(公告)日：2011-02-22
申请号：US12239892
申请日：2008-09-29
申请人： Kenji Maruyama , Masao Kondo , Keisuke Sato
发明人： Kenji Maruyama , Masao Kondo , Keisuke Sato
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L21/00
CPC分类号： H01L21/28291 , G11C11/22 , H01L29/516 , H01L29/6684 , H01L29/78391 , H01L43/06
摘要： The present invention is to provide a semiconductor memory device capable of providing excellent storage properties, scaling and high integration and a method of fabricating the same. A semiconductor memory device has a multiferroic film exhibiting ferroelectricity and ferromagnetism, a channel region on an interface of a semiconductor substrate below the multiferroic film, source and drain regions formed on both sides of the channel region, a gate electrode (data write electrode) applying gate voltage to the multiferroic film to write data in such a way that the orientation of magnetization is changed as corresponding to the orientation of dielectric polarization, and source and drain electrodes (data read electrodes) that read data based on a deviation in a flow of the carrier, the deviation caused by applying the Lorentz force to the carrier flowing in the channel region from a magnetic field occurring in the channel region because of magnetization.
摘要翻译：本发明提供能够提供优异的存储特性，缩放和高集成度的半导体存储器件及其制造方法。半导体存储器件具有显示铁电性和铁磁性的多铁性膜，在多铁性膜下方的半导体衬底的界面上的沟道区，形成在沟道区两侧的源极和漏极区，施加了栅电极（数据写入电极）栅极电压到多层膜以这样的方式写入数据，使得磁化的取向对应于介电极化的取向而变化，以及源极和漏极（数据读取电极），其基于流动的偏差读取数据载体，由于由于磁化而从在沟道区域中发生的磁场向在沟道区域中流动的载流子施加洛伦兹力所引起的偏差。

7. 发明授权

US07153705B2 Electronic device with electrode and its manufacture 失效
标题翻译：带电极的电子设备及其制造
公开(公告)号：US07153705B2
公开(公告)日：2006-12-26
申请号：US10821841
申请日：2004-04-12
申请人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
发明人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
IPC分类号： H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.
摘要翻译：制造电子器件的方法包括以下步骤：（a）制备（001）取向的ReO 3 N 3层; 和（b）在ReO 3层上形成具有钙钛矿结构的（001）取向的氧化物铁电层。优选地，步骤（a）包括以下步骤：（a-1）制备（001）取向的MgO层; 和（a-2）在MgO层上形成（001）取向的ReO 3 3层。提供一种能够获得大极化的铁电体层的电子装置及其制造方法。

8. 发明申请

US20060166378A1 Method of producing semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US20060166378A1
公开(公告)日：2006-07-27
申请号：US10532249
申请日：2003-11-05
申请人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
发明人： Kenji Maruyama , Masaki Kurasawa , Masao Kondo , Yoshihiro Arimoto
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A semiconductor device incorporating a capacitor structure that includes a ferroelectric thin film is obtained by forming, on a single crystalline substrate 10 having a surface suited for growing thereon a thin film layer of ferroelectric single crystal having a plane (111), a ferroelectric single crystalline thin film 12′ containing Pb and having a plane (111) 11 in parallel with the surface of the substrate (or a ferroelectric polycrystalline thin film containing Pb and oriented parallel with the plane (111) in parallel with the surface of the substrate) and part 16 of a circuit of a semiconductor device, to thereby fabricate the single crystalline substrate 10 having said ferroelectric thin film containing Pb and said part of the circuit of the semiconductor device; and bonding said single crystalline substrate 10 to another substrate on which the other circuit of the semiconductor device has been formed in advance, to couple the two circuits together. The capacitor in the semiconductor device thus obtained includes a ferroelectric thin film having a large amount of polarizing charge. The semiconductor device can be used as a highly reliable nonvolatile memory.
摘要翻译：通过在具有适于生长表面的单晶衬底10上形成具有平面（111）的铁电单晶薄膜层，铁电单结晶含有Pb的具有与基板表面平行的平面（111）11的薄膜12'（或含有Pb的铁电体多晶薄膜，与基板的表面平行取向平行），以及半导体器件的电路的第16部分，从而制造具有含有Pb的所述铁电薄膜和所述半导体器件的所述电路的所述部分的单晶衬底10; 并将所述单晶衬底10预先连接到其上形成有半导体器件的另一电路的另一衬底上，以将两个电路耦合在一起。由此得到的半导体装置中的电容器具有极性电荷量大的铁电薄膜。半导体器件可以用作高度可靠的非易失性存储器。

9. 发明授权

US06744085B2 Electronic device with electrode and its manufacture 失效
公开(公告)号：US06744085B2
公开(公告)日：2004-06-01
申请号：US10076349
申请日：2002-02-19
申请人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
发明人： Kenji Maruyama , Masao Kondo , Masaki Kurasawa
IPC分类号： H01L2972
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/56 , H01L28/60
摘要： A method of manufacturing an electronic device includes the steps of: (a) preparing a (001) oriented ReO3 layer; and (b) forming a (001) oriented oxide ferroelectric layer having a perovskite structure on the ReO3 layer. Preferably, the step (a) includes the steps of: (a-1) preparing a (001) oriented MgO layer; and (a-2) forming a (001) oriented ReO3 layer on the MgO layer. An electronic device capable of obtaining a ferroelectric layer of a large polarization and a method of manufacturing the same are provided.

10. 发明授权

US09171199B2 Information processing device and information processing method 有权
标题翻译：信息处理装置及信息处理方法
公开(公告)号：US09171199B2
公开(公告)日：2015-10-27
申请号：US13876580
申请日：2011-09-30
申请人： Yusuke Sakai , Masao Kondo
发明人： Yusuke Sakai , Masao Kondo
IPC分类号： G06K9/00 , H04N7/14 , H04N7/15 , H04N21/4223 , H04N21/441 , H04N21/442 , H04N21/4788 , H04N21/658
CPC分类号： H04N7/152 , G06K9/00288 , G06K9/00335 , H04N7/141 , H04N7/15 , H04N21/4223 , H04N21/441 , H04N21/44218 , H04N21/4788 , H04N21/6582
摘要： An information processing apparatus may include a user recognition unit to recognize a user in a captured image, and a behavior recognition unit to recognize a behavior of a user. In addition, the apparatus may include a generation unit to generate user behavior information including information of the recognized user and the recognized behavior of the recognized user. Further, the apparatus may include a communication unit to transmit the user behavior information to an external apparatus.
摘要翻译：信息处理装置可以包括识别拍摄图像中的用户的用户识别单元和识别用户的行为的行为识别单元。此外，该装置可以包括生成单元，用于生成包括识别的用户的信息和识别的用户的识别的行为的用户行为信息。此外，该装置可以包括用于将用户行为信息发送到外部设备的通信单元。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式