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61. 发明授权

US5800964A Photoresist composition 失效
标题翻译：光刻胶组成
公开(公告)号：US5800964A
公开(公告)日：1998-09-01
申请号：US717779
申请日：1996-09-24
申请人： Mitsuru Sato , Kazuyuki Nitta , Hideo Hada , Tatsuya Hashiguchi , Hiroshi Komano , Toshimasa Nakayama
发明人： Mitsuru Sato , Kazuyuki Nitta , Hideo Hada , Tatsuya Hashiguchi , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： Disclosed is a novel and improved photoresist composition which comprises: (A) a film-forming resinous compound which is, in the presence of an acid, subject to a change in the solubility in an alkaline solution; and (B) an acid-generating agent capable of releasing an acid by the exposure to actinic rays which is an oxime sulfonate compound represented by the general formula NC--CR.sup.1 .dbd.N--O--SO.sub.2 --R.sup.2, in which R.sup.1 and R.sup.2 are, each independently from the other, an unsubstituted or halogen-substituted monovalent aliphatic hydrocarbon group, e.g., alkyl, cycloalkyl, alkenyl and cycloalkenyl groups. By virtue of the non-aromatic nature of the component (B) as well as good solubility thereof in organic solvents and high acid strength of the acid released therefrom, the composition is highly transparent to deep ultraviolet light even when the content of the component (B) is relatively large and the photosensitivity of the composition is very high so that the photoresist composition is capable of giving a patterned resist layer having excellent characteristics.
摘要翻译：公开了一种新颖且改进的光致抗蚀剂组合物，其包含：（A）在酸存在下，在碱溶液中溶解度变化的成膜树脂化合物; 和（B）能够通过暴露于由通式NC-CR1 = NO-SO2-R2表示的肟磺酸盐化合物的光化射线释放酸的酸产生剂，其中R 1和R 2各自独立地为另一个，未取代或卤素取代的一价脂族烃基，例如烷基，环烷基，烯基和环烯基。由于组分（B）的非芳香性质以及其在有机溶剂中的良好溶解性和从其释放的酸的高酸强度，组合物对于深紫外光是高度透明的，即使组分（ B）相对较大并且组合物的光敏性非常高，使得光致抗蚀剂组合物能够提供具有优异特性的图案化抗蚀剂层。

62. 发明授权

US5795702A Photoresist stripping liquid compositions and a method of stripping photoresists using the same 失效
标题翻译：光刻胶剥离液体组合物和使用其剥离光致抗蚀剂的方法
公开(公告)号：US5795702A
公开(公告)日：1998-08-18
申请号：US717778
申请日：1996-09-24
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： C11D7/32 , C11D7/50 , G03F7/42 , H01L21/027 , H01L21/304 , G03C5/00 , C11D9/04
CPC分类号： G03F7/425
摘要： The improved photoresist stripping liquid composition comprises (a) 2-30 wt % of a hydroxylamine, (b) 2-35 wt % of water, (c) 2-20 wt % of an amine having an acid dissociation constant (pKa) of 7.5-13 in aqueous solution at 25.degree. C., (d) 35-80 wt % of a water-soluble organic solvent and (e) 2-20 wt % of a corrosion inhibitor and the. method using this composition are capable of not only efficient removal of modified photoresist films that have been formed by dry etching, ashing, ion implantation and other treatments under hostile conditions but also effective prevention of the corrosion that would otherwise occur in substrates irrespective of whether they are overlaid with Al or Al alloy layers or Ti layers.
摘要翻译：改进的光致抗蚀剂剥离液体组合物包含（a）2-30重量％的羟胺，（b）2-35重量％的水，（c）2-20重量％的具有酸解离常数（pKa）的胺在25℃的水溶液中为7.5-13，（d）35-80重量％的水溶性有机溶剂和（e）2-20重量％的缓蚀剂，使用该组合物的方法不仅能够有效去除在恶劣条件下通过干法蚀刻，灰化，离子注入和其它处理形成的改性光致抗蚀剂膜，而且可以有效地防止否则会在基材中发生的腐蚀，而不管它们是否覆盖有Al或Al合金层或Ti层。

63. 发明授权

US5631314A Liquid coating composition for use in forming photoresist coating films and photoresist material using said composition 失效
标题翻译：用于使用所述组合物形成光致抗蚀剂涂层膜和光致抗蚀剂材料的液体涂料组合物
公开(公告)号：US5631314A
公开(公告)日：1997-05-20
申请号：US427900
申请日：1995-04-26
申请人： Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： C08F2/44 , G03F7/004 , G03F7/09 , C08L101/04
CPC分类号： G03F7/0048 , G03F7/091
摘要： A liquid coating composition for forming an anti-interference film over a photoresist film is prepared by combining a water-soluble, film-forming component with a specified fluorosurfactant or by combining said water-soluble, film-forming component with a fluoro-surfactant and a specified anionic surfactant. A coating film is formed from said liquid coating composition over a photoresist film to produce a photoresist material of a dual structure. The photoresist material is particularly effective in lessening the multiple-interference effect of light, thereby enabling the formation of very fine resist patterns having high fidelity to mask patterns.
摘要翻译：通过将水溶性成膜组分与特定的含氟表面活性剂组合或将所述水溶性成膜组分与氟表面活性剂组合，制备用于在光致抗蚀剂膜上形成抗干扰膜的液体涂料组合物，指定的阴离子表面活性剂。在光致抗蚀剂膜上由所述液体涂料组合物形成涂膜以产生具有双重结构的光致抗蚀剂材料。光致抗蚀剂材料在减轻光的多重干涉效应方面特别有效，从而能够形成对掩模图案具有高保真度的非常精细的抗蚀剂图案。

64. 发明授权

US5614271A Method for the formation of a silica-based coating film 失效
标题翻译：形成二氧化硅基涂膜的方法
公开(公告)号：US5614271A
公开(公告)日：1997-03-25
申请号：US692187
申请日：1996-08-05
申请人： Tatsuhiko Shibuya , Susumu Okano , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
发明人： Tatsuhiko Shibuya , Susumu Okano , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
IPC分类号： B05D3/06 , B05D7/00 , B05D7/24 , C04B41/50 , C09D183/00 , C09D183/16 , C23C18/12 , C23C18/14 , H01L21/316 , B29C71/02
CPC分类号： H01L21/316 , C04B41/5035 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C04B2111/00844
摘要： Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.
摘要翻译：提出了在半导体器件的制造中在硅晶片等基板的表面上形成二氧化硅类涂膜的改进方法，其中通过用含聚硅氮烷的涂布溶液涂布基板表面，随后将涂层转化聚硅氮烷层形成二氧化硅基涂膜。该方法包括以规定的加热速度按照加热方案干燥聚硅氮烷的涂层，连续或逐步升高温度至240℃至350℃，然后在远紫外光的温度下进行辐射处理 240℃至350℃，然后在350℃至800℃下进行烘烤处理。

65. 发明授权

US5520952A Method for forming a protective coating film on electronic parts and devices 失效
标题翻译：在电子零件和装置上形成保护涂膜的方法
公开(公告)号：US5520952A
公开(公告)日：1996-05-28
申请号：US274021
申请日：1994-07-12
申请人： Katsuya Tanitsu , Atsushi Kawakami , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Katsuya Tanitsu , Atsushi Kawakami , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： B05D5/00 , C03C17/00 , C03C17/30 , C09D183/02 , C09D183/06 , G02F1/1333 , B05D3/02
CPC分类号： G02F1/133345 , B05D5/00 , C03C17/009 , C03C17/30 , C09D183/02 , C09D183/06 , Y10T428/1045
摘要： Proposed is a novel method for the formation of a protective coating film having a pencil hardness of up to 9 H on the surface of various substrates or, in particular, electronic parts such as color filters and liquid crystal display panels. The method comprises: coating the surface with a liquid coating composition of which the principal ingredient is a partial cohydrolysis-condensation product of a tetraalkoxy silane, e.g., tetraethoxy silane, and a functional alkoxy silane, e.g., 3-methacryloxypropyl trimethoxy silane, and drying and heating the coating layer to effect complete curing. The hardness of the cured protective film can be increased by admixing the liquid coating composition with a finely divided inorganic filler such as a colloidal silica. It is optional that the functional alkoxy silane is subjected to the cohydrolysis reaction after it is polymerized alone or after it is copolymerized with a polyfunctional acrylic monomer.
摘要翻译：提出了在各种基板的表面上形成铅笔硬度高达9H的保护涂膜的新颖方法，特别是电子部件如滤色器和液晶显示面板。该方法包括：用液体涂料组合物涂覆表面，其中主要成分是四烷氧基硅烷（例如四乙氧基硅烷）和官能的烷氧基硅烷（例如3-甲基丙烯酰氧基丙基三甲氧基硅烷）的部分共水解缩合产物和干燥并加热涂层以完成固化。固化保护膜的硬度可以通过将液体涂料组合物与细碎的无机填料如胶体二氧化硅混合来提高。功能性烷氧基硅烷在单独聚合或与多官能丙烯酸单体共聚后，可进行共水解反应是可选的。

66. 发明授权

US06261745B1 Post-ashing treating liquid compositions and a process for treatment therewith 有权
标题翻译：后灰化处理液体组合物及其处理方法
公开(公告)号：US06261745B1
公开(公告)日：2001-07-17
申请号：US09323988
申请日：1999-06-02
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Hiroshi Komano , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Hiroshi Komano , Toshimasa Nakayama
IPC分类号： G03F740
CPC分类号： H01L21/02071 , G03F7/425 , G03F7/427 , H01L21/02052 , H01L21/31116 , H01L21/31138
摘要： Disclosed herein is a post-ashing treating liquid composition comprising a salt of hydrofluoric acid with a base free from metal ions, a water-soluble organic solvent, water, and an acetylene alcohol/alkylene oxide adduct. Disclosed also herein is a process for treatment with said treating liquid composition. For removal of resist residues such as modified photoresist films and metal depositions, the treating liquid composition and the treating process can be advantageously applied to the substrates having been dry-etched, followed by ashing under severe conditions, without corrosion on metal layers and damage to an organic SOG layer formed thereon.
摘要翻译：本文公开了一种后灰化处理液体组合物，其包含氢氟酸盐与不含金属离子的碱，水溶性有机溶剂，水和乙炔醇/烯化氧加合物。本文还公开了用所述处理液组合物进行处理的方法。为了除去抗蚀剂残留物如改性光致抗蚀剂膜和金属沉积物，处理液组合物和处理方法可以有利地应用于已经被干法蚀刻的基底上，随后在苛刻条件下灰化，而不会对金属层产生腐蚀和损坏在其上形成有机SOG层。

67. 发明授权

US6132928A Coating solution for forming antireflective coating film 失效
标题翻译：用于形成抗反射涂膜的涂布溶液
公开(公告)号：US6132928A
公开(公告)日：2000-10-17
申请号：US148997
申请日：1998-09-08
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： G03F7/004 , C09D5/00 , G03F7/09 , G03F7/11 , H01L21/027 , G03C1/72
CPC分类号： G03F7/091 , Y10S430/106 , Y10S430/121
摘要： A coating solution for forming an antireflective coating film making it possible to form a uniform coating film, which sustains an antireflective effect and shows no unevenness of coating or little surface discontinuity, even in a small application dose and thus ensuring the production of semiconductor devices at a low cost and a high efficiency. The coating solution for forming an antireflective coating film is one to be used for forming an anti-interference film on a resist film, characterized in that the coating solution gives a contact angle to the resist film of 15.degree. or below, when applied onto the resist film.
摘要翻译：一种用于形成抗反射涂膜的涂布溶液，使得可以形成均匀的涂膜，即使在小的涂布剂量下也能保持抗反射效果，并且不显示涂层不均匀或少量的表面不连续性，从而确保半导体器件的生产成本低，效率高。用于形成抗反射涂膜的涂布溶液是用于在抗蚀剂膜上形成抗干扰膜的涂布溶液，其特征在于，当涂布在抗蚀剂膜上时，涂布溶液与抗蚀剂膜接触角为15°或更低抗拒膜。

68. 发明授权

US5985525A Developer solution for photoresist composition 失效
标题翻译：光致抗蚀剂组合物的显影剂溶液
公开(公告)号：US5985525A
公开(公告)日：1999-11-16
申请号：US127640
申请日：1993-09-28
申请人： Mitsuru Sato , Hatsuyuki Tanaka , Toshimasa Nakayama
发明人： Mitsuru Sato , Hatsuyuki Tanaka , Toshimasa Nakayama
IPC分类号： G03F7/32 , H01L21/027 , H01L21/30 , G03C5/00
CPC分类号： G03F7/322
摘要： Proposed is an aqueous developer solution for an alkali-developable photoresist composition which contains, besides a water-soluble organic basic compound such as tetramethyl ammonium hydroxide and an anionic or non-ionic surface active agent as conventional ingredients in the prior art developwer solutions, an inorganic ammonium salt such as ammonium sulfate, ammonium phosphates and ammonium borates in a limited amount. By virtue of this unique additive, the developer solution is advantageous in respect of the absence of any scums on the patterned resist layer obtained by the development treatment therewith as well as quite good orthogonality in the cross sectional profile of line-patterned resist layer in addition to the greatly improved latitude in the light exposure dose and range of focusing depth in the light-exposure process of the resist layer with ultraviolet light.
摘要翻译：提出了一种用于碱显影光致抗蚀剂组合物的水性显影剂溶液，其除了水溶性有机碱性化合物如四甲基氢氧化铵和阴离子或非离子表面活性剂外，还含有现有技术的开发溶液中的常规成分，无机铵盐如硫酸铵，磷酸铵和硼酸铵。由于这种独特的添加剂，显影剂溶液在通过其显影处理获得的图案化抗蚀剂层上不存在任何浮渣以及线图案化抗蚀剂层的横截面轮廓中的相当好的正交性方面是有利的在抗紫外线的光曝光过程中的曝光剂量和聚焦深度的范围大大提高。

69. 发明授权

US5908738A Undercoating composition for photolithography 失效
标题翻译：用于光刻的底漆组合物
公开(公告)号：US5908738A
公开(公告)日：1999-06-01
申请号：US18910
申请日：1998-02-05
申请人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/09 , G03F7/11 , G03F7/26 , H01L21/027 , G03C1/825
CPC分类号： G03F7/091 , Y10S430/117 , Y10S430/124
摘要： Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.
摘要翻译：提出了通过介于基板表面和光致抗蚀剂层之间用于光致抗蚀剂层的光刻图案中的新颖的底涂层组合物，以减少来自基板表面的反射光的不利影响。本发明的底漆组合物包含（a）被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物和（b）多羟基二苯甲酮化合物，二苯基砜化合物或二苯基亚砜化合物，任选地与（c）（甲基）丙烯酸酯的不溶性树脂。

70. 发明授权

US5792274A Remover solution composition for resist and method for removing resist using the same 失效
标题翻译：去除抗蚀剂的溶液组合物及使用其去除抗蚀剂的方法
公开(公告)号：US5792274A
公开(公告)日：1998-08-11
申请号：US747898
申请日：1996-11-13
申请人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
发明人： Masahito Tanabe , Kazumasa Wakiya , Masakazu Kobayashi , Toshimasa Nakayama
IPC分类号： C11D7/10 , C11D7/26 , C11D7/32 , C11D7/50 , C11D17/08 , G03F7/42 , H01L21/027 , B08B3/04 , B08B3/08
CPC分类号： G03F7/423 , G03F7/425
摘要： A remover solution composition for resist which comprises (a) a salt of hydrofluoric acid with a metal-free base, (b) a water-soluble organic solvent, and (c) water and optionally (d) an anticorrosive, and has a pH of 5 to 8. A method for removing resist which comprises the steps of (I) forming a resist layer on a substrate having a metal film, (II) light-exposing the resist layer through a mask pattern and subsequently developing the resist layer to form a resist pattern, and (III) dry-etching the substrate using the resist pattern as a mask and then removing the unnecessary resist and modified resist film with the remover solution composition.
摘要翻译：一种抗蚀剂去除剂溶液组合物，其包含（a）氢氟酸与无金属碱的盐，（b）水溶性有机溶剂和（c）水和任选的（d）防腐蚀剂，并具有pH （I）在具有金属膜的基板上形成抗蚀剂层的步骤，（II）通过掩模图案曝光抗蚀剂层，然后将抗蚀剂层显影到形成抗蚀剂图案，（III）使用抗蚀剂图案作为掩模对基板进行干蚀刻，然后用去除剂溶液组合物除去不需要的抗蚀剂和改性的抗蚀剂膜。

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