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1. 发明授权

US5908738A Undercoating composition for photolithography 失效
标题翻译：用于光刻的底漆组合物
公开(公告)号：US5908738A
公开(公告)日：1999-06-01
申请号：US18910
申请日：1998-02-05
申请人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/09 , G03F7/11 , G03F7/26 , H01L21/027 , G03C1/825
CPC分类号： G03F7/091 , Y10S430/117 , Y10S430/124
摘要： Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.
摘要翻译：提出了通过介于基板表面和光致抗蚀剂层之间用于光致抗蚀剂层的光刻图案中的新颖的底涂层组合物，以减少来自基板表面的反射光的不利影响。本发明的底漆组合物包含（a）被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物和（b）多羟基二苯甲酮化合物，二苯基砜化合物或二苯基亚砜化合物，任选地与（c）（甲基）丙烯酸酯的不溶性树脂。

2. 发明授权

US5925495A Photoresist laminate and method for patterning using the same 失效
标题翻译：光刻胶层压板和使用其的图案化方法
公开(公告)号：US5925495A
公开(公告)日：1999-07-20
申请号：US924260
申请日：1997-09-05
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , G03F7/11 , H01L21/027 , H01L21/302 , H01L21/3065 , G03C1/492
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photoresist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition comprising an oxime sulfonate acid generating agent. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.
摘要翻译：提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。因此，在包含（a）基底的光致抗蚀剂层压件上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 以及（c）由抗反酸涂层形成的抗氧化剂层，其特征在于包含肟磺酸生成剂的特定负性化学增感光致抗蚀剂组合物。图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

3. 发明授权

US6083665A Photoresist laminate and method for patterning using the same 有权
标题翻译：光刻胶层压板和使用其的图案化方法
公开(公告)号：US6083665A
公开(公告)日：2000-07-04
申请号：US273262
申请日：1999-03-22
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/09 , G03F7/11 , H01L21/027 , H01L21/302 , H01L21/3065 , G03F7/40
CPC分类号： G03F7/091 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photo-resist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.
摘要翻译：提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。因此，在包含（a）基材的光致抗蚀剂层压体上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 和（c）由特定的负性化学增感光致抗蚀剂组合物形成在抗反射涂层上的光致抗蚀剂层。图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

4. 发明授权

US5756255A Undercoating composition for photolithography 失效
标题翻译：用于光刻的底漆组合物
公开(公告)号：US5756255A
公开(公告)日：1998-05-26
申请号：US747567
申请日：1996-11-12
申请人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Toshimasa Nakayama
发明人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/09 , G03F7/11 , G03F7/26 , H01L21/027 , G03C1/825
CPC分类号： G03F7/091 , Y10S430/117 , Y10S430/124
摘要： Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.
摘要翻译：提出了通过介于基板表面和光致抗蚀剂层之间用于光致抗蚀剂层的光刻图案中的新颖的底涂层组合物，以减少来自基板表面的反射光的不利影响。本发明的底漆组合物包含（a）被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物和（b）多羟基二苯甲酮化合物，二苯基砜化合物或二苯基亚砜化合物，任选地与（c）（甲基）丙烯酸酯的不溶性树脂。

5. 发明授权

US5939510A Undercoating composition for photolithographic resist 失效
标题翻译：光刻抗蚀剂底涂组合物
公开(公告)号：US5939510A
公开(公告)日：1999-08-17
申请号：US845358
申请日：1997-04-24
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko
IPC分类号： G03F7/11 , C09K3/00 , G03F7/09 , H01L21/027 , C08G8/02 , C08G12/00
CPC分类号： G03F7/091
摘要： Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photoresist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.
摘要翻译：提出了一种新颖的底涂层组合物，用于形成底涂层和介于光致抗蚀剂层之间的底涂层，目的在于降低光致抗蚀剂层的图案曝光中光的反射对基板表面的不利影响在干蚀刻处理中，在图案化的抗蚀剂层和底涂层之间的蚀刻速率方面，没有不希望的层之间的混合现象和开槽以及大的选择比。底涂层组合物包含（A）紫外线吸收剂，其为在芳基上具有至少一个未取代或烷基取代的氨基的二苯甲酮化合物或芳族偶氮甲碱化合物，（B）优选三聚氰胺化合物的交联剂，其具有至少两个羟甲基或分子中的氮原子以重量比（A）：（B））键合在1：1至1:10范围内的烷氧基甲基。

6. 发明授权

US5789136A Negative-working photoresist composition 失效
标题翻译：负性光刻胶组合物
公开(公告)号：US5789136A
公开(公告)日：1998-08-04
申请号：US626147
申请日：1996-04-05
申请人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Fumitake Kaneko
发明人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Fumitake Kaneko
IPC分类号： G03F7/004 , G03F7/038 , G03C1/73
CPC分类号： G03F7/0045 , G03F7/038 , Y10S430/121 , Y10S430/122 , Y10S430/126 , Y10S430/128
摘要： Proposed is an alkali-developable negative-working photoresist composition in the form of a solution capable of exhibiting high sensitivity and greatly improved stability of the resist layer of the composition on a substrate surface after pattern-wise exposure to actinic rays and kept for a substantial length of time before further processing. The photoresist composition comprises, as the essential ingredients, (a) an alkali-soluble resin such as a copolymer of hydroxystyrene and styrene; (b) a compound capable of releasing an acid when irradiated with actinic rays such as tris(2,3-dibromopropyl) isocyanurate; (c) a crosslinking agent selected from the group consisting of melamine resins and urea resins substituted at the N-positions by methylol groups, alkoxy methyl groups or a combination thereof; and (d) a sensitivity improver which is hexa(methoxymethyl) melamine or di(methoxymethyl) urea, each in a specified proportion.
摘要翻译：提出了一种可显影的负性光致抗蚀剂组合物，其形式为能够显示出高灵敏度并且大大提高组合物的抗蚀剂层在图案形式暴露于光化射线之后在基材表面上的稳定性，并保持基本上进一步处理之前的时间长短。光致抗蚀剂组合物包含作为必要成分的（a）碱溶性树脂，例如羟基苯乙烯和苯乙烯的共聚物; （b）当用诸如三（2,3-二溴丙基）异氰脲酸酯的光化射线照射时能够释放酸的化合物; （c）选自三聚氰胺树脂和在N-位被羟甲基取代的尿素树脂的交联剂，烷氧基甲基或其组合; 和（d）灵敏度改进剂，其为六（甲氧基甲基）三聚氰胺或二（甲氧基甲基）脲，各自为特定比例。

7. 发明授权

US6087068A Undercoating composition for photolithographic resist 有权
标题翻译：光刻抗蚀剂底涂组合物
公开(公告)号：US6087068A
公开(公告)日：2000-07-11
申请号：US271899
申请日：1999-03-18
申请人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko
发明人： Mitsuru Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko
IPC分类号： G03F7/11 , C09K3/00 , G03F7/09 , H01L21/027
CPC分类号： G03F7/091
摘要： Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photo-resist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.
摘要翻译：提出了一种新颖的底涂层组合物，用于形成底涂层和介于光致抗蚀剂层之间的底涂层，其目的是减少光抗蚀剂图案曝光中光在基板表面上的反射的不利影响在干蚀刻处理中，在图案化的抗蚀剂层和底涂层之间的蚀刻速率方面，层间相对紫外光没有不希望的层之间的混合现象和开槽以及大的选择比。底涂层组合物包含（A）紫外线吸收剂，其为在芳基上具有至少一个未取代或烷基取代的氨基的二苯甲酮化合物或芳族偶氮甲碱化合物，（B）优选三聚氰胺化合物的交联剂，其具有至少两个羟甲基或分子中的氮原子以重量比（A）：（B））键合在1：1至1:10范围内的烷氧基甲基。

8. 发明授权

US5700625A Negative-working photoresist composition 失效
标题翻译：负性光刻胶组合物
公开(公告)号：US5700625A
公开(公告)日：1997-12-23
申请号：US630621
申请日：1996-04-10
申请人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Fumitake Kaneko
发明人： Mitsuru Sato , Katsumi Oomori , Kiyoshi Ishikawa , Etsuko Iguchi , Fumitake Kaneko
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027
CPC分类号： G03F7/0045 , G03F7/038
摘要： Disclosed is a novel chemical-sensitization type negative-working photoresist composition capable of exhibiting high sensitivity to actinic rays and giving a patterned resist layer with high resolution and excellently orthogonal cross sectional profile of the patterned resist layer without occurrence of microbridges. The composition comprises (a) a poly(hydroxystyrene)-based resin; (b) a compound capable of releasing an acid by the irradiation with actinic rays such as tris(2,3-dibromopropyl) isocyanurate; and (c) a crosslinking agent such as a urea resin and melamine resin, each in a specified weight proportion, the poly(hydroxystyrene)-based resin as the component (a) having such a dispersion of the molecular weight distribution that the ratio of the weight-average molecular weight M.sub.w to the number-average molecular weight M.sub.n does not exceed 1.4 and being substantially free from low molecular weight fractions including unpolymerized monomer and oligomers having a molecular weight smaller than 1000.
摘要翻译：公开了一种新型化学增感型负性光致抗蚀剂组合物，其能够对光化射线表现出高灵敏度，并且提供了图案化抗蚀剂层的高分辨率和非常正交的截面轮廓的图案化抗蚀剂层，而不会发生微桥。组合物包含（a）聚（羟基苯乙烯）类树脂; （b）能够通过光化射线如三（2,3-二溴丙基）异氰脲酸酯的照射而释放酸的化合物; 和（c）以规定重量比例的交联剂如尿素树脂和三聚氰胺树脂，作为组分（a）的聚（羟基苯乙烯）基树脂具有这样的分子量分布：重均分子量Mw与数均分子量Mn不超过1.4，基本上不含低分子量级分，包括分子量小于1000的未聚合单体和低聚物。

9. 发明授权

US6042988A Chemical-amplification-type negative resist composition 有权
标题翻译：化学放大型负光刻胶组合物
公开(公告)号：US6042988A
公开(公告)日：2000-03-28
申请号：US161778
申请日：1998-09-29
申请人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
发明人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
IPC分类号： G03F7/004 , G03F7/038 , G03C1/492
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical-amplification-type negative resist composition containing an alkali-soluble resin, a compound capable of generating an acid by irradiation and a crosslinking agent, and the resist composition of the present invention is characterized in that it further contains an organic carboxylic acid compound as an acidic compound and an organic amine compound as an alkaline compound. According to the content of such acidic and alkaline compounds, the negative resist composition achieves a negative resist pattern exhibiting improved definition and an excellent profile with a reduced dependency on the type of substrate as well as a minimized change in the sensitivety and film thickness with the passage of time and a satisfactory PEG margin, and therefore, the negative resist composition of the present invention can be used in the field of manufacturing electronic parts such as semiconductor devices and liquid-crystal display devices, where finer and more precise processing is increasingly required.
摘要翻译：本发明提供一种含有碱溶性树脂，能够通过照射产生酸的化合物和交联剂的化学扩增型负性抗蚀剂组合物，其特征在于，其还含有作为酸性化合物的有机羧酸化合物和作为碱性化合物的有机胺化合物。根据这种酸性和碱性化合物的含量，负性抗蚀剂组合物实现了抗蚀剂图案显示出改善的清晰度和优异的轮廓，对基材的类型的依赖性降低，并且使敏感度和膜厚度的最小化变化与时间的流逝和令人满意的PEG余量，因此，本发明的负性抗蚀剂组合物可以用于半导体器件和液晶显示器件等电子部件的制造领域，其中越来越需要更精细和更精确的加工。

10. 发明授权

US5976760A Chemical-sensitization resist composition 失效
标题翻译：化学增感抗蚀剂组合物
公开(公告)号：US5976760A
公开(公告)日：1999-11-02
申请号：US898105
申请日：1997-07-22
申请人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
发明人： Katsumi Oomori , Hideo Hada , Fumitake Kaneko , Mitsuru Sato , Kazufumi Sato , Toshimasa Nakayama
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , H01L21/027 , G03C1/492
CPC分类号： G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： Proposed is a novel chemical-sensitization resist composition capable of giving a positively or negatively patterned resist layer of excellent pattern resolution and cross sectional profile of the patterned resist layer with high sensitivity. Characteristically, the resist composition is formulated, as combined with a resinous ingredient which is subject to changes in the solubility behavior in an alkaline developer solution by interaction with an acid, with a specific oximesulfonate compound as the radiation-sensitive acid-generating agent represented by the general formulaR.sup.1 --C(CN).dbd.N--O--SO.sub.2 --R.sup.2,in which R.sup.1 is an inert organic group and R.sup.2 is an unsubstituted or substituted polycyclic monovalent hydrocarbon group selected from the group consisting of polycyclic aromatic hydrocarbon groups such as naphthyl and polycyclic non-aromatic hydrocarbon groups such as a terpene or camphor residue.
摘要翻译：提出了一种能够以高灵敏度赋予图案化抗蚀剂层优异图案分辨率和截面轮廓的正或负图案化抗蚀剂层的新型化学增感抗蚀剂组合物。特别地，将抗蚀剂组合物配制成与通过与酸相互作用而在碱性显影剂溶液中溶解度行为发生变化的树脂成分与特定的肟磺酸酯化合物作为辐射敏感性产酸剂，通式为R1-C（CN）= NO-SO2-R2，其中R1为惰性有机基团，R2为未取代或取代的多环一价烃基，选自多环芳烃基如萘基和多环非芳族烃基如萜烯或樟脑残基。

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