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61. 发明专利

JPH05129307A METHOD AND APPARATUS FOR FORMATION OF BUMP 失效
公开(公告)号：JPH05129307A
公开(公告)日：1993-05-25
申请号：JP28962891
申请日：1991-11-06
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： ISHIDA TAKASHI , SATO MASAYUKI , NORITOMI TOYOSHIGE , MIYAMOTO HIROAKI , SANO YOSHIYUKI
IPC分类号： H01L21/60 , H05K3/34
摘要： PURPOSE:To form, easily and in a short time, a bump for a semiconductor integrated circuit device using a flip-chip system. CONSTITUTION:The following are installed: a molten-solder tank 18 which melts a solder for bump formation use and which stores the molten solder; and a molten-solder discharge plate 12 in which discharge holes 14 guiding the discharge position of the molten solder 13 flowing through a molten-solder passage pipe 17 from the molten-solder tank 18 have been made. In order to form bumps, the discharge holes 14 in the molten-solder discharge plate 12 are first aligned with substratum metal patterns 8 on a semiconductor wafer 7. In succession, the molten solder 13 from the discharge holes 14 is exposed to an extent that its surface swells due to surface tension; after that, a mounting stand 6 on which the semiconductor wafer 7 is mounted is lowered; the substratum metal patterns 8 are brought into direct contact with the exposed molten solder 13; the molten solder in prescribed quantities is applied to the substratum metal patterns 8; the bumps are formed.

62. 发明专利

JPH03250629A METHOD FOR FORMING PROTRUDENT ELECTRODE 失效
公开(公告)号：JPH03250629A
公开(公告)日：1991-11-08
申请号：JP4545890
申请日：1990-02-28
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , ISHIDA TAKASHI
IPC分类号： H01L21/60 , H01L21/321
摘要： PURPOSE:To simplify a process and attain a refined pitch and further, reduce a cost by covering the whole surface of a wafer after forming base metallic parts with a metallic film for forming protrudent electrodes and then, forming the protrudent electrodes selectively on the base metallic parts through partitioning the metallic film for forming protrudent electrodes. CONSTITUTION:A protection film 2 on electrodes 1 is bored, and BLMs(Ball Limiting Metalization) 3 are formed thereon. Then, a solder film 4 of a desired film thickness and a desired composition is formed by a vacuum evaporation and the like. A groove 6 for partitioning the solder film is formed on the boundary between the solder films 4 by projecting a laser beam 5 on it. By heating the solder films 4 to a solder fusing temperature after coating the surfaces of the solder films 4 with fluxes, semi-spherical solder bumps 7 are obtained on the BLMs 3 by virtue of surface tensions. Making the groove 6 for partitioning the solder film form the boundary, the solder film 4 shrinks into the right and left part respectively. Then, they change into sphere-like parts, each of which forms the shape in that the surface area is shrinked into the minimum one, on the BLMs 3 having good wettabilities for the solder films. In such a manner, by the fine working using the laser beam, the solder film formed on the whole surface of a wafer is partitioned all over the surface, and can be changed into the solder bumps.

63. 发明专利

JPH03142847A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH03142847A
公开(公告)日：1991-06-18
申请号：JP27969689
申请日：1989-10-30
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI
IPC分类号： H05K1/18 , H01L21/60
摘要： PURPOSE:To restrain a concentration of a thermal stress generated by a difference in a coefficient of thermal expansion by a method wherein a connecting member is formed as a needle-shaped electrode of a linear structure, one end side of it is connected to an electrode part of a wiring board and the other end side is connected to an electrode part of a semiconductor chip. CONSTITUTION:A wire 8 of a prescribed length is first passed through a wiring hole 11 in a wiring board 2; one end side of the wire 8 is pressure-bonded to an electrode 9 of the wiring board 2; a needle-shaped electrode 7 is formed. The other end side of the wire 8 is pressure-bonded to a corresponding chip electrode 4 of a semiconductor chip 1 which is fixed and bonded to a heat sink 5. Thereby, the chip electrode 4 of the semiconductor chip 1 and the electrode 9 of the wiring board 2 are connected electrically by using the needle- shaped electrode 7; In addition, all wires 8 of the wiring board 2 are pressure- bonded; after that, the semiconductor chip 1 connected to the wiring board 2 via needle-shaped electrodes 7 are sealed airtightly by using a cap 3 via sealing members 10. Thereby, a semiconductor integrated circuit device of a modular structure can be manufactured.

64. 发明专利

JPH0330457A SEMICONDUCTOR DEVICE COOLING METHOD AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0330457A
公开(公告)日：1991-02-08
申请号：JP16398089
申请日：1989-06-28
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , ISHIDA TAKASHI , OTSUKA KANJI
IPC分类号： H01L23/427
摘要： PURPOSE:To improve a semiconductor device in cooling efficiency and reliability, to make a cooling structure simple and miniaturized, and to protect it against corrosion and contamination caused by coolant by a method wherein specific liquid is supplied to the heat releasing part of the semiconductor device and vaporized, and the heat releasing part is cooled by latent heat of vaporization. CONSTITUTION:Specific liquid 4 is supplied to a heat releasing part 2b of a semiconductor device and vaporized, and the heat releasing part 2b is cooled by the latent heat of vaporization. For instance, liquefied CO2 4 spouted out from a liquid feed opening 3a of a liquid feed nozzle 3 is uniformly sprayed on the rear side 2b of the semiconductor chip 2, and when the fine particles of liquefied CO2 4 are vaporized, they absorb heat released from the rear side 2b of the semiconductor ship 2 as latent heat of vaporization, whereby heat exchange takes place at the surface to turn liquefied CO2 into CO2 gas 5 to cool the semiconductor chip 2. Vaporized CO2 gas 5 is exhausted through an exhaust vent 8 of a vaporizing chamber 7, introduced into a compression liquidizing mechanism 10 passing through a circulation tube 9, liquefied by compression and returned to the liquid feed nozzle 3, and spouted out again from the liquid feed opening 3a against the rear side 2b of the semiconductor chip 2.

65. 发明专利

JPH02218143A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02218143A
公开(公告)日：1990-08-30
申请号：JP3821689
申请日：1989-02-20
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , ISHIDA TAKASHI , OTSUKA KANJI
IPC分类号： H01L21/60
摘要： PURPOSE:To decrease fatigue caused by thermal stress at the bonding part of a chip and a mounting board by connecting a chip electrode on the main surface of a semiconductor chip and a board electrode on the main surface of the mounting board which faces said chip electrode with an approximately curved lead. CONSTITUTION:A semiconductor chip 1 on which an integrated circuit element is formed and a mounting board 2 on which the semiconductor chip 1 is mounted are provided. A chip electrode 5 which is formed on the main surface of the semiconductor chip 1 is connected to a board electrode 8 which is formed on the main surface of the mounting board 2 so as to face the chip electrode 5 with an approximately curved lead 11. As a result, thermal stress caused by the difference in thermal expansions of the semiconductor chip 1 and the mounting board 2 is absorbed with the approximately curved lead 11. In this way, the fatigue of the lead connecting part for connecting the semiconductor chip and the mounting board can be suppressed.

66. 发明专利

JPH02180057A COOLING OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02180057A
公开(公告)日：1990-07-12
申请号：JP19489
申请日：1989-01-04
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , YAMASHITA MANABU
IPC分类号： H01L23/373 , H01L23/427
摘要： PURPOSE:To improve cooling efficiency by bringing a cooling medium directly vaporizing from a solid into directly contact with a heating part of a semiconductor device in order to cool the heating part. CONSTITUTION:Carbon dioxide 20 in a solid state powdered by a powdering processing device 11 of a cooling medium is supplied to a heating part of a semiconductor device 1 while interposing a powder supply tube 12. Then, the heating part of a semiconductor device 1, that is, a semiconductor pellet 3 is arranged inside a cooling part 13 while being sheltered from the open air. Accordingly, as compared with a liquid cooling medium, a vaporization layer to be formed between the heating part and the cooling medium can be reduced, or existence of the vaporization layer can be partly in an instant extinguished. Thereby, a calorie to be emitted to the cooling medium from the heating part of the semiconductor device increases so that cooling efficiency can be improved.

67. 发明专利

JPH01270252A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH01270252A
公开(公告)日：1989-10-27
申请号：JP9811888
申请日：1988-04-22
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI
IPC分类号： H01L23/29 , H01L23/28 , H01L23/36
摘要： PURPOSE:To elevate adhesion with a semiconductor pellet and a heat radiator with simple constitution and improve heat radiation efficiency by filling with gel resin in a gap between the heat conducting surface of a heat radiator equipped with a heat conducting surface with an area larger than that of a semiconductor pellet and the wiring board surface. CONSTITUTION:A heat radiator 8, which is mounted on the back of an integrated circuit forming surface 3a and equipped with a heat conducting surface with an area larger than that of a semiconductor pellet 3, is provided to the semiconductor pellet 3 which is mounted through a bump electrode 4 in the condition that the integrated circuit forming face 3a is opposed to a wiring board 5. And gel resin 10 is filled in between the heat conducting surface 8b of this heat radiator 8 and the wiring board face 5. Hereby, adhesion between the heat radiator 8 and the semiconductor pellet 3 can be elevated, and the contact condition between the back of the semiconductor pellet 3 and the heat conducting surface of the heat radiator 8 can be maintained without using a bonding means such as metallization, etc. Also, cooling efficiency of the conductor pellet 3 can be improved and reliability in operation of the semiconductor device can be improved.

68. 发明专利

JPS63293931A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS63293931A
公开(公告)日：1988-11-30
申请号：JP12828587
申请日：1987-05-27
申请人： HITACHI LTD
发明人： SAWARA KUNIZO , OTSUKA KANJI , ISHIDA TAKASHI
IPC分类号： H01L23/34 , H01L21/60
摘要： PURPOSE:To improve remarkably heat dissipation characteristics, by performing the heat dissipation from a semiconductor region in which heat dissipation bump is used, via an insulating film composed of diamond having superior thermal conductivity. CONSTITUTION:A diamond thin film 11 is formed on the surface of a mother chip 1. A heat dissipating bump 9 is fixed on the diamond thin film 11 via a bonding metal 12, and connected to a sub-chip 3. A heat dissipating fin 16 is fixed on the surface of a substrate 2 opposite to the surface on which the mother chip 1 is fixed. The diamond thin film 11 is preferably formed by electron beam CVD method. The heat generated from a semiconductor active region 17 of the sub-chip 3 is dissipated through the diamond insulating film 11, the heat dissipating bump 9, the mother chip 1, the substrate 2 of a package, and the heat dissipating fin 16. As the thermal conductivity of the diamond thin film 11 is superior, a multichip module whose heat dissipation characteristics are excellent can be obtained.

69. 发明专利

JPS63107145A FLIP CHIP 失效
公开(公告)号：JPS63107145A
公开(公告)日：1988-05-12
申请号：JP25167586
申请日：1986-10-24
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , SATO TOSHIHIKO
IPC分类号： H01L21/60
摘要： PURPOSE:To prevent the peel-off between metal layers in ground layers beneath an electrode and to improve the life of the electrode, by forming a meniscus part at the lower edge part of the ground layer of the electrode in a flip chip having a protruding electrode. CONSTITUTION:The surface of a planar element, in which inner electrode wiring 3 consisting of an Al electrode wiring is formed, is coated with a protecting film 4 consisting of an SiO2 film, a glass film and the like. An electrode window is provided in the protecting film 4. A Cr layer 6 is constituted by chemical dry etching so as to form a meniscus 11 at the inner skirt of an egdge part 10 of the window. Then sputtering or ion milling is performed when a Cu layer 7 and an Au layer 8 are formed. As a result, the side walls of the end parts of the etched Cu layer 7 and Au layer 8 are vertically etched with respect to the protecting film 4. Stress concentration is made less by the formation of the meniscus 11 in this way, and the peel-off of the Cr layers from the other layer 5 can be prevented.

70. 发明专利

JPS60154647A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60154647A
公开(公告)日：1985-08-14
申请号：JP1018184
申请日：1984-01-25
申请人： HITACHI LTD , HITACHI OME ELECTRONIC CO
发明人： ISHIDA TAKASHI , SEKI MASATOSHI , SAWARA KUNIZOU , FURUKAWA MICHIAKI , ANJIYOU KEIICHI
IPC分类号： H01L23/15 , H01L23/08 , H01L23/10
摘要： PURPOSE:To improve the reliability and to improve the wiring characteristics of a semiconductor device by forming sealing glass or wirings through an alumina layer on a substrate made of electrically insulating silicon carbide, thereby increasing the bonding strength of the substrate with the glass. CONSTITUTION:A pellet 2 such as Si is mounted with an adhesive layer 3 on the surface at the center of a substrate 1 made of an electrically insulating silicon carbide. On the other hand, a cap 6 made of the silicon carbide is bonded through the sealing glass 4 and leads 5. The bonding pad of the pellet 2 and the inner lead of the leads 5 are electrically connected via wirings 7. In this embodiment, when the glass 4 is bonded onto the substrate 1, an alumina (alpha-Al2O3) layer 8 is formed on the substrate 1. The layer 4 is formed by coating by screen printing an alumina material on the substrate 1 and then baking at approx. 1,000 deg.C.

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