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1. 发明专利

JPS60154647A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60154647A
公开(公告)日：1985-08-14
申请号：JP1018184
申请日：1984-01-25
申请人： HITACHI LTD , HITACHI OME ELECTRONIC CO
发明人： ISHIDA TAKASHI , SEKI MASATOSHI , SAWARA KUNIZOU , FURUKAWA MICHIAKI , ANJIYOU KEIICHI
IPC分类号： H01L23/15 , H01L23/08 , H01L23/10
摘要： PURPOSE:To improve the reliability and to improve the wiring characteristics of a semiconductor device by forming sealing glass or wirings through an alumina layer on a substrate made of electrically insulating silicon carbide, thereby increasing the bonding strength of the substrate with the glass. CONSTITUTION:A pellet 2 such as Si is mounted with an adhesive layer 3 on the surface at the center of a substrate 1 made of an electrically insulating silicon carbide. On the other hand, a cap 6 made of the silicon carbide is bonded through the sealing glass 4 and leads 5. The bonding pad of the pellet 2 and the inner lead of the leads 5 are electrically connected via wirings 7. In this embodiment, when the glass 4 is bonded onto the substrate 1, an alumina (alpha-Al2O3) layer 8 is formed on the substrate 1. The layer 4 is formed by coating by screen printing an alumina material on the substrate 1 and then baking at approx. 1,000 deg.C.

2. 发明专利

JPS6115352A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS6115352A
公开(公告)日：1986-01-23
申请号：JP13511284
申请日：1984-07-02
申请人： Hitachi Ltd
发明人： OOTSUKA KANJI , USAMI TAMOTSU , NAKAMURA KOUSUKE , SEKI MASATOSHI , SAWARA KUNIZOU
IPC分类号： H01L21/48 , H01L21/52 , H01L21/58 , H01L23/15 , H01L23/50
CPC分类号： H01L24/32 , H01L21/4857 , H01L23/15 , H01L24/73 , H01L2224/13099 , H01L2224/16 , H01L2224/16225 , H01L2224/16235 , H01L2224/32225 , H01L2224/48 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/01004 , H01L2924/15153 , H01L2924/1517 , H01L2924/15312 , H01L2924/16152 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PURPOSE:To obtain substrates excellent in thermal conductivity and electric insulation by a method wherein a substrate is formed out of a sintered body of Si carbide containing a small amount of beryllium formed by hot press. CONSTITUTION:An arbitrary number of stripe metallized wirings 2 are printed in one direction on the surface of a pre-molded body 1 of flat plate form obtained from the powder of Si carbide containing a small amount of beryllium oxide. A required number of pieces of pre-molded bodies 1 of the same shape with the formed wirings 2 are laminated. Then, these are hot-pressed into an element material 3. The element material 3 resulting from the hot-press is sliced into required thickness rectangularly to the wirings 2 with a diamond wheel or the like. A plurality of substrates 4 can be obtained by slicing the element material 3 in repetition. The substrate 4 has two main surfaces parallel to each other where the cut surfaces of wirings 2 are exposed. One of the two main surfaces serves as the surface for mounting a pellet.
摘要翻译：目的：通过其中通过热压形成的含有少量铍的碳化铌烧结体形成基板的方法来获得导热性和电绝缘性优异的基板。构成：在从含有少量氧化铍的碳化硅粉末获得的平板形式的预成型体1的表面上，沿一个方向印刷任意数量的条状金属化布线2。将形成有布线2的相同形状的预成型体1所需的片数层叠。然后，将它们热压成元件材料3.由热压制成的元件材料3用金刚石砂轮等将其切成半导体至布线2的所需厚度。可以通过重复地对元件材料3进行切片来获得多个基板4。基板4具有彼此平行的两个主表面，其中布线2的切割表面暴露。两个主表面之一用作安装颗粒的表面。

3. 发明专利

JPS60132351A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60132351A
公开(公告)日：1985-07-15
申请号：JP23973883
申请日：1983-12-21
申请人： HITACHI LTD
发明人： KATOU HIROMASA , USAMI MITSUO , SAWARA KUNIZOU , SHIRAI MASAYUKI
IPC分类号： H01L21/60 , H01L23/50
摘要： PURPOSE:To provide for a larger number of pins and to improve the yield after bonding and device reliability by a method wherein the shape of a double bonding pad positioned on a pellet is made to be longer along the center line of the pellet. CONSTITUTION:In a semiconductor device provided with a pellet carrying a large-scale integrated circuit, the lateral dimension of a double bonding pad 1A is similar to or smaller than a bonding pad 5 whereto only one bonding wire is to be attached. The double bonding pad 1A is elongated so that bondings can be arranged longitudinally on a pellet 4. Installing the pad 1A of this type on the pellet 4 ensures a constant distance between the double bonding pad 1A and the other bonding pad 5, and increases the number of pins. The resultant large space between the bonding pads leads to an improved yield after bonding and higher reliability.

4. 发明专利

JPS6053035A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6053035A
公开(公告)日：1985-03-26
申请号：JP16033383
申请日：1983-09-02
申请人： HITACHI LTD
发明人： SAWARA KUNIZOU , OOTSUKA KANJI , ISHIDA TAKASHI , SEKI MASATOSHI
IPC分类号： H01L23/12 , H01L21/58 , H01L23/52 , H01L25/065 , H01L25/07 , H01L25/18 , H05K1/03 , H05K1/14
摘要： PURPOSE:To secure simultaneously high density mounting and heat dissipation at a semiconductor device by a method wherein pellets of the plural number are mounted on an insulating substrate of favorable heat conductivity, and the mounted substrates thereof of the plural number are mounted on an insulating substrate of favorable heat conductivity to construct a tier construction. CONSTITUTION:A semiconductor device is provided with a mother board 1 as a wiring substrate, and subboards 2 of the plural number as pellet mounting substrates. The boards 1, 2 thereof are constructed by using an electrically insulating substrate consisting of a material mainly consisting of silicon carbide as an electrically insulating material of favorable heat conductivity. Pellets 5 of the plural number are connected mechanically and moreover electrically to be mounted according to the face down bonding method to the top of the subboards 2. The respective pellets 5 are so constructed as to have circuits enabled to display a memory function and a logic function, etc., and so designed properly as to be enabled to display the desired integrated function according to the pellets 5 of the plural number. Pads 7 of a large number of pieces for repair of the logic function are formed in the neighborhoods of the respective pellets 5 on the tops of the subboards 2, and the pads 7 thereof are used as occasion demands for the change of the circuit when the desired logic function can not be obtained.

5. 发明专利

JPS5923552A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5923552A
公开(公告)日：1984-02-07
申请号：JP13195782
申请日：1982-07-30
申请人： Hitachi Ltd
发明人： ISHIDA TAKASHI , OOTSUKA KANJI , SAWARA KUNIZOU
IPC分类号： H01L23/50 , H01L21/60 , H01L23/495
CPC分类号： H01L23/49582 , H01L2224/32245 , H01L2224/451 , H01L2224/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/48472 , H01L2224/73265 , H01L2224/85424 , H01L2924/01013 , H01L2924/01029 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To obtain a lead frame having excellent fine structure and electric properties by forming an aluminum layer on the wire bonding part of a lead frame of Fe alloy and forming a gold layer of low resistance on the other part. CONSTITUTION:In order to thermally match to a ceramic container, a lead frame is formed of Fe alloy of 42-alloy or the like, and a semiconductor 5 is secured onto a tab 2. Aluminum 7 is deposited on the bonding part between the lead 3 and wirings 6, thereby bonding the wirings 6. Cu layers 8 are deposited on both upper and lower surfaces of the leads 3. According to this structure, preferable bondability can be obtained by the layer 7, and electric properties can be improved by the layer 8. Accordingly, even if the lead frame is ultrafinely formed, electric properties are not deteriorated.
摘要翻译：目的：通过在Fe合金的引线框架的引线接合部分上形成铝层并形成另一部分低电阻的金层，以获得具有优异的精细结构和电性能的引线框架。构成：为了与陶瓷容器热匹配，引线框架由42合金等的Fe合金形成，半导体5固定在突片2上。铝7沉积在引线之间的接合部分上 3和布线6，从而结合布线6.将Cu层8沉积在引线3的上表面和下表面上。根据该结构，可以通过层7获得优选的粘合性，并且可以通过因此，即使引线框架被超细地形成，电性能也不会劣化。

6. 发明专利

JPS6053093A CIRCUIT BOARD 失效
公开(公告)号：JPS6053093A
公开(公告)日：1985-03-26
申请号：JP16033283
申请日：1983-09-02
申请人： HITACHI LTD
发明人： SAWARA KUNIZOU , ISHIDA TAKASHI , SEKI MASATOSHI , KEIKOUIN TOSHIAKI
IPC分类号： H05K3/34 , H01L21/60 , H01L23/48 , H05K1/02

7. 发明专利

JPS6020521A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6020521A
公开(公告)日：1985-02-01
申请号：JP12763083
申请日：1983-07-15
申请人： HITACHI LTD
发明人： ISHIDA TAKASHI , SEKI MASATOSHI , SAWARA KUNIZOU , EMOTO YOSHIAKI , KAMATA CHIYOSHI
IPC分类号： H01L21/60
摘要： PURPOSE:To obtain a wiring, dimensional accuracy thereof is high and resistance thereof is low, by forming the wiring on a package substrate by a multilayer wiring consisting of chromium and copper. CONSTITUTION:A wiring 4 is formed as three layer thin-film multilayer wirings consisting of a chromium layer 10 formed on a package substrate 1 after sintering through the evaporation of a thin-film, a copper layer 11 evaporated on the layer 10 in a thin-film shape and a chromium layer 12 evaporated on the layer 11 in the thin-film shape. A pedestal section 5 is composed of a copper layer 13 evaporated on the chromium layer 12 as the uppermost layer of the wiring 4 in the thin-film shape and a chromium layer 14 evaporated around the copper layer 13 in the thin-film shape. Since the wiring 4 is formed by the three layer thin- film evaporated layers of the chromium layer 10, the copper layer 11 and the chromium layer 12, the wiring 4 and the pedestal section 5 are formed with dimensional accuracy higher than a tungsten wiring formed through sintering. Accordingly, a large-sized pellet can be face-down bonded, and the resistance of the wiring 4 can be lowered by the presence of the copper layer 11.

8. 发明专利

JPS59207692A Method of producing multilayer circuit board 失效
公开(公告)号：JPS59207692A
公开(公告)日：1984-11-24
申请号：JP8085883
申请日：1983-05-11
申请人： Hitachi Ltd
发明人： KAMATA CHIYOJI , OOTSUKA KANJI , SAWARA KUNIZOU , EMOTO YOSHIAKI , KOBAYASHI TSUNEO
IPC分类号： H05K3/46 , B32B15/08 , H05K3/40

9. 发明专利

JPS5923553A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS5923553A
公开(公告)日：1984-02-07
申请号：JP13195982
申请日：1982-07-30
申请人： Hitachi Ltd
发明人： OOTSUKA KANJI , SAWARA KUNIZOU , USAMI TAMOTSU
IPC分类号： H01L23/12 , H01L23/495 , H01L23/50
CPC分类号： H01L23/49551 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： PURPOSE:To facilitate the bending, forming and package of a frame in the same direction and degree as the bent of a lead frame. CONSTITUTION:Leads 12 are bent in a clamp shape at the position of the outer peripheral side, and inner leads 13 are enhanced in height (l) higher than the surface of the lead frame 10. Simultaneously, for corners are bent in the size (l) in the same direction as the leads 12. In this case, holes 14 of four corners are utilized and opened. According to this structure, even after the ends of the inner leads 13 are bent and formed, the leads can be held at the same position, and corrections for the position and the size are not necessary at the time of punching the frame 10, thereby maintaining accurate position of the leads and facilitating a packaging.
摘要翻译：目的：为了方便框架的弯曲，成型和包装，与引线框架的弯曲方向和程度相同。构成：引线12在外周侧的位置处弯曲成夹具形状，并且内引线13的高度（l）增加到高于引线框架10的表面。同时，对于拐角弯曲尺寸（在这种情况下，利用并打开四个角的孔14。根据该结构，即使在内引线13的端部弯曲形成之后，也可以将引线保持在同一位置，并且在冲压框架10时不需要对位置和尺寸进行校正，因此，保持引线的准确位置并促进包装。

10. 发明专利

JPS58101431A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS58101431A
公开(公告)日：1983-06-16
申请号：JP19859281
申请日：1981-12-11
申请人： HITACHI LTD , HITACHI MICROCUMPUTER ENG
发明人： SAWARA KUNIZOU , OKINAGA TAKAYUKI
IPC分类号： H01L21/52 , H01L21/60
摘要： PURPOSE:To reduce the cost of bonding a semiconductor pellet by bonding the back surface of the pellet with the Al deposited layer on the pellet mounting surface of a package via aluminum alloy. CONSTITUTION:An Al deposited layer 2 is formed simultaneously with other wirings on the pellet mounting surface of the base 1 of a ceramic package, an Al deposited layer 4 is also formed on the mounting surface of a pellet 3, and the layers 2, 4 are bonded via an Al alloy layer 5. The layer 5 employs a foil which contains, for example, approx. 0.2% of Ge. According to this configuration, the pellet can be mounted without using an expensive material such as Au, thereby largely reducing the cost.

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