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1. 发明专利

JPH0574773A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH0574773A
公开(公告)日：1993-03-26
申请号：JP23139391
申请日：1991-09-11
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： KAWASHIMA MASAYUKI , OTSUKA KANJI , ISHIDA TAKASHI
IPC分类号： H01L21/60 , H01L21/321 , H01L23/12
摘要： PURPOSE:A semiconductor chip is mounted on a package board through the intermediary of a CCB bump to form a semiconductor integrated circuit device, where voids are prevented from being generated inside the CCB bump. CONSTITUTION:An electrode 3a formed on the primary face of a package substrate and a BLM(Ball Limiting Metallization) formed on the primary surface of an semiconductor chip 7 are bonded together through the intermediary of the CCB bump 6 to mount the semiconductor chip 7 on the package semiconductor board 2, where the BLM pattern 8 formed on the primary surface 7 is formed flat in cross section.

2. 发明专利

JPH02288232A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH02288232A
公开(公告)日：1990-11-28
申请号：JP10767589
申请日：1989-04-28
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , ISHIDA TAKASHI , TATE HIROSHI
IPC分类号： H01L21/3213 , H01L21/3205 , H01L21/321 , H01L21/60
摘要： PURPOSE:To shorten a manufacturing process by forming insulating protective films as a lower layer and an upper layer onto the metallic wiring layer of a flip-chip electrode section and an external exposed pad section and simultaneously conducting the etching process of the machining of the upper-layer insulating protective film with the flip-chip electrode section and the external exposed pad section. CONSTITUTION:An SiO2 film 7 as an upper-layer insulating protective film is shaped onto the surfaces of an opened flip-chip electrode section 2 and an external exposed pad section 3. The SiO2 film 7 of the flip-chip electrode section 2 and the external exposed pad section 3 is opened through wet etching by a hydrofluoric acid group etchant. Since the etching rates of the SiO2 film 7 of the upper-layer insulating protective film and the Si3N4 film 6 of a lower-layer insulating protective film differ and the etching rate of the Si3N4 film 6 is made lower than that of the SiO2 film 7 by approximately centuple at that time, the etching of the external exposed pad section 3 progresses only up to the surface of the lower-layer insulating film, and the Si3N4 film 6 is not etched. Since the SiO2 film 7 formed to the flip-chip electrode section 2 and the external exposed pad section 3 can be opened simultaneously through wet etching, the upper-layer insulating protective film can be machined at a time.

3. 发明专利

JPS6221249A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6221249A
公开(公告)日：1987-01-29
申请号：JP16024985
申请日：1985-07-22
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： SAWARA KUNIZO , ISHIDA TAKASHI , OTSUKA KANJI , KISHIKAWA NORIO , OKINAGA TAKAYUKI
IPC分类号： H01L23/24 , H01L23/42
摘要： PURPOSE:To improve the cooling efficiency of semiconductor chips by mixing a diamond powder of high heat conductivity into the insulating gel, thereby reducing the heat resistance. CONSTITUTION:A diamond powder 8 of high heat conductivity is mixed into the insulating gel 9 for preventing the water infiltration to semiconductor chips 1, thereby reducing the heat resistance. Hereupon, the heat generated at chips 1 can be conducted through not only the projected electrodes 2 but also the gel 9, into which the diamond powder 8 is mixed, to a package substrate 6, further to dams 7 and a cap 10 so as to be dissipated. With this, the cooling efficiency of the chips 1 can be improved.

4. 发明专利

JPH03142946A VISUAL INSPECTION EQUIPMENT 失效
公开(公告)号：JPH03142946A
公开(公告)日：1991-06-18
申请号：JP27970789
申请日：1989-10-30
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： ISHIDA TAKASHI , AKASAKI HIROSHI , YAMASHITA MANABU
IPC分类号： G01N21/88 , G01N21/956 , H01L21/66
摘要： PURPOSE:To inspect the surface of a spherically moving object to be inspected from three-dimensional direction while keeping always a specified distance, by making the three-dimensional motion of an illuminating means and of a detecting means possible while keeping a specified distance from an object to be inspected mounted on a driving table. CONSTITUTION:The following are equipped; a driving table 4 which has freedom in three-dimensional direction and is capable of spheric motion, and an illuminat ing means and a detecting means which are capable of three dimensional motion while keeping a specified distance from an object 1 to be inspected mounted on the driving table 4. Hence the spheric motion of the object 1 to be inspected is possible, that is, the object can be subjected to rotational motion while the angle of the object is continuously changed. Thereby the surface of the object to be inspected which is subjected to spheric motion can be inspected from three-dimensional direction while a specified distance is always kept.

5. 发明专利

JPH03250629A METHOD FOR FORMING PROTRUDENT ELECTRODE 失效
公开(公告)号：JPH03250629A
公开(公告)日：1991-11-08
申请号：JP4545890
申请日：1990-02-28
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , ISHIDA TAKASHI
IPC分类号： H01L21/60 , H01L21/321
摘要： PURPOSE:To simplify a process and attain a refined pitch and further, reduce a cost by covering the whole surface of a wafer after forming base metallic parts with a metallic film for forming protrudent electrodes and then, forming the protrudent electrodes selectively on the base metallic parts through partitioning the metallic film for forming protrudent electrodes. CONSTITUTION:A protection film 2 on electrodes 1 is bored, and BLMs(Ball Limiting Metalization) 3 are formed thereon. Then, a solder film 4 of a desired film thickness and a desired composition is formed by a vacuum evaporation and the like. A groove 6 for partitioning the solder film is formed on the boundary between the solder films 4 by projecting a laser beam 5 on it. By heating the solder films 4 to a solder fusing temperature after coating the surfaces of the solder films 4 with fluxes, semi-spherical solder bumps 7 are obtained on the BLMs 3 by virtue of surface tensions. Making the groove 6 for partitioning the solder film form the boundary, the solder film 4 shrinks into the right and left part respectively. Then, they change into sphere-like parts, each of which forms the shape in that the surface area is shrinked into the minimum one, on the BLMs 3 having good wettabilities for the solder films. In such a manner, by the fine working using the laser beam, the solder film formed on the whole surface of a wafer is partitioned all over the surface, and can be changed into the solder bumps.

6. 发明专利

JPH0330457A SEMICONDUCTOR DEVICE COOLING METHOD AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH0330457A
公开(公告)日：1991-02-08
申请号：JP16398089
申请日：1989-06-28
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , ISHIDA TAKASHI , OTSUKA KANJI
IPC分类号： H01L23/427
摘要： PURPOSE:To improve a semiconductor device in cooling efficiency and reliability, to make a cooling structure simple and miniaturized, and to protect it against corrosion and contamination caused by coolant by a method wherein specific liquid is supplied to the heat releasing part of the semiconductor device and vaporized, and the heat releasing part is cooled by latent heat of vaporization. CONSTITUTION:Specific liquid 4 is supplied to a heat releasing part 2b of a semiconductor device and vaporized, and the heat releasing part 2b is cooled by the latent heat of vaporization. For instance, liquefied CO2 4 spouted out from a liquid feed opening 3a of a liquid feed nozzle 3 is uniformly sprayed on the rear side 2b of the semiconductor chip 2, and when the fine particles of liquefied CO2 4 are vaporized, they absorb heat released from the rear side 2b of the semiconductor ship 2 as latent heat of vaporization, whereby heat exchange takes place at the surface to turn liquefied CO2 into CO2 gas 5 to cool the semiconductor chip 2. Vaporized CO2 gas 5 is exhausted through an exhaust vent 8 of a vaporizing chamber 7, introduced into a compression liquidizing mechanism 10 passing through a circulation tube 9, liquefied by compression and returned to the liquid feed nozzle 3, and spouted out again from the liquid feed opening 3a against the rear side 2b of the semiconductor chip 2.

7. 发明专利

JPH02218143A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH02218143A
公开(公告)日：1990-08-30
申请号：JP3821689
申请日：1989-02-20
申请人： HITACHI LTD , HITACHI VLSI ENG
发明人： AKASAKI HIROSHI , ISHIDA TAKASHI , OTSUKA KANJI
IPC分类号： H01L21/60
摘要： PURPOSE:To decrease fatigue caused by thermal stress at the bonding part of a chip and a mounting board by connecting a chip electrode on the main surface of a semiconductor chip and a board electrode on the main surface of the mounting board which faces said chip electrode with an approximately curved lead. CONSTITUTION:A semiconductor chip 1 on which an integrated circuit element is formed and a mounting board 2 on which the semiconductor chip 1 is mounted are provided. A chip electrode 5 which is formed on the main surface of the semiconductor chip 1 is connected to a board electrode 8 which is formed on the main surface of the mounting board 2 so as to face the chip electrode 5 with an approximately curved lead 11. As a result, thermal stress caused by the difference in thermal expansions of the semiconductor chip 1 and the mounting board 2 is absorbed with the approximately curved lead 11. In this way, the fatigue of the lead connecting part for connecting the semiconductor chip and the mounting board can be suppressed.

8. 发明专利

JP2010114350A Method of manufacturing semiconductor device, and semiconductor device 有权
标题翻译：制造半导体器件的方法和半导体器件
公开(公告)号：JP2010114350A
公开(公告)日：2010-05-20
申请号：JP2008287478
申请日：2008-11-10
申请人： Hitachi Ltd , Honda Motor Co Ltd , 本田技研工業株式会社 , 株式会社日立製作所
发明人： YOKOYAMA GOICHI , ISHIDA TAKASHI , NAKAMURA MORIO , MIYAGAWA NOBUAKI
IPC分类号： H01L25/065 , H01L21/3205 , H01L23/52 , H01L25/07 , H01L25/18 , H01L27/00
CPC分类号： H01L2224/13009 , H01L2224/14 , H01L2224/16145 , H01L2224/17517 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/73204 , H01L2224/73265 , H01L2225/06513 , H01L2225/06544 , H01L2924/01079 , H01L2924/1305 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of improving a manufacturing yield of a semiconductor device of a three-dimensional structure having a penetrating electrode. SOLUTION: By forming a support part with a spacer 49 and a second electrode 50a laminated therein in a region without having a first bump electrode 50 formed therein between a surface protective film 48 on a principal surface of a wafer W2 and a back surface of a wafer 3, the flexure of the wafer W3 is prevented to keep the distance between the surface protective film 48 on the principal surface of the wafer W2 and the back surface of the wafer W3 uniform. Accordingly, generation of an unfilled part of an adhesive 51 between the surface protective film 48 on the principal surface of the wafer W2 and the back surface of the wafer W3 is prevented. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供能够提高具有穿透电极的三维结构的半导体器件的制造成品率的技术。解决方案：通过在不具有在晶片W2的主表面上的表面保护膜48和背面之间形成的第一突起电极50的区域中形成具有间隔件49和第二电极50a的支撑部分，晶片3的表面，防止了晶片W3的弯曲，保持晶片W2的主表面上的表面保护膜48与晶片W3的后表面之间的距离一致。因此，防止在晶片W2的主表面上的表面保护膜48与晶片W3的背面之间产生粘合剂51的未填充部分。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2000100869A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000100869A
公开(公告)日：2000-04-07
申请号：JP26870298
申请日：1998-09-22
申请人： HITACHI LTD
发明人： SATO MASAYUKI , ISHIDA TAKASHI
IPC分类号： H01L21/60
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device, capable of preventing the generation of α rays and increased manufacturing costs and mechanically electrically bonding a chip to a substrate by bonding terminals. SOLUTION: A bonding terminal 18c which bonding a semiconductor chip 10 to a substrate 20 has a bump 42 formed of Cu, a chip side solder layer 17 formed on both sides of the bump 42 and formed of Ag-Sn, and a substrate side solder layer 27 formed of Au-Sn, where the bump 42 is soldered to a chip- side electrode pad 12 by the chip-side solder layer 17 and is soldered to the substrate side electrode pad 22 with the substrate side solder layer 27. Since the Cu bump 42 is soldered by the chip side solder layer 17, formed of Ag-Sn and by the substrate side solder layer 27 formed of Au-Sn, the amount of use of solder can be reduced and moreover since no use of Pb is made, this reduces cost and prevents generation of α rays.

10. 发明专利

JPH08150899A ANTITHEFT DEVICE FOR VEHICLE 失效
公开(公告)号：JPH08150899A
公开(公告)日：1996-06-11
申请号：JP29708694
申请日：1994-11-30
申请人： NIPPON DENSO CO , MITSUBISHI ELECTRIC CORP , HITACHI LTD , TELEFUNKEN MICROELECTRON , MAZDA MOTOR
发明人： ISHIDA TAKASHI , SAWAMOTO TETSUO , NAGASAWA SHIRO , WACHI SATOSHI , ISHII TOSHIO , IKEDA YUJI , REINAA AATERU , NOBAATO HAATOUINGU , KIMURA SHOGO , TOOMASU RUUPUREHITO , OKAMITSU ATSUSHI , TAGAWA YUTAKA , KAWAZOE SATORU , KITAKI YOSHIMASA
IPC分类号： E05B49/00 , B60R25/04 , B60R25/24 , G08B13/00 , H04B1/06
摘要： PURPOSE: To provide an antitheft apparatus for vehicles having a further enhanced antitheft property such that when the proper driver who has lost the key is to re-register an ID code, all ID codes including that of the lost key, except the ID code of a key used for executing a re-registration mode, are eliminated so that only the ID code of the key owned by the proper driver is newly registered. CONSTITUTION: This apparatus has an immobilizer unit 4 which checks a characteristic ID code from a transponder 1 against the ID code of the immobilizer unit 4 and outputs code words to an EGI unit 9 when the codes match, and an EGI unit 9 which checks the code words against the code words stored in the EGI unit 9 and permits engine start when they match. The code words registered in the immobilizer unit 4 cannot be reloaded.

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