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61. 发明申请

WO0247139A3 METHODE OF FORMING A COPPER FILM ON A SUBSTRATE 审中-公开
标题翻译：在基材上形成铜膜的方法
公开(公告)号：WO0247139A3
公开(公告)日：2004-01-15
申请号：PCT/JP0110590
申请日：2001-12-04
申请人： EBARA CORP , KONDO FUMIO , MISHIMA KOJI , TANAKA AKIRA , SUZUKI YOKO , TOGAWA TETSUJI , INOUE HIROAKI
发明人： KONDO FUMIO , MISHIMA KOJI , TANAKA AKIRA , SUZUKI YOKO , TOGAWA TETSUJI , INOUE HIROAKI
IPC分类号： B65G49/07 , B24B37/04 , B24B49/16 , C23C18/16 , C25D5/00 , C25D5/50 , C25D7/12 , H01L21/00 , H01L21/02 , H01L21/288 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/673 , H01L21/677 , H01L21/768 , H01L23/52 , B24B7/22
CPC分类号： H01L21/67161 , B24B37/005 , B24B37/042 , B24B37/245 , B24B37/345 , B24B41/061 , B24B49/16 , C23C18/1632 , C23C18/1653 , C25D7/123 , H01L21/02074 , H01L21/02087 , H01L21/0209 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/67167 , H01L21/67173 , H01L21/67184 , H01L21/67219 , H01L21/6723 , H01L21/67393 , H01L21/67396 , H01L21/67772 , H01L21/7684 , H01L21/76843 , H01L21/76849 , H01L21/76864 , H01L21/76873 , H01L21/76874 , H01L21/76877
摘要： A substrate processing method comprising steps for forming a copper film on a surface of a substrate. These steps includes the step of filling a first metal in the trenches so as to form a plated film of the first metal on an entire surface of the substrate by electroplating, wherein the electromagnetic field is adjusted by the virtual anode so that differences of thickness of the plated film between the central portion and the peripheral portion of the substrate being minimized, and polishing and removing the plated film by pressing the substrate to the polishing surface, wherein the pressures pressing the substrate to the polishing surface at a central portion and a peripheral portion are adjusted.
摘要翻译：一种基板处理方法，包括在基板的表面上形成铜膜的步骤。这些步骤包括在沟槽中填充第一金属以便通过电镀在基板的整个表面上形成第一金属的镀膜的步骤，其中电磁场由虚拟阳极调节，使得厚度差异基板的中心部分和周边部分之间的镀膜最小化，并且通过将基板压在研磨表面上来研磨和去除镀膜，其中将基板压在抛光表面的压力在中心部分和周边部分进行调整。

62. 发明申请

WO0003074A8 PLATING DEVICE 审中-公开
标题翻译：电镀装置
公开(公告)号：WO0003074A8
公开(公告)日：2000-05-04
申请号：PCT/JP9903729
申请日：1999-07-09
申请人： EBARA CORP , HONGO AKIHISA , SUZUKI KENICHI , CHONO ATSUSHI , TADA MITSUO , OGATA AKIRA , SENDAI SATOSHI , MISHIMA KOJI
发明人： HONGO AKIHISA , SUZUKI KENICHI , CHONO ATSUSHI , TADA MITSUO , OGATA AKIRA , SENDAI SATOSHI , MISHIMA KOJI
IPC分类号： C25D21/12 , G01R31/02
CPC分类号： C25D21/12 , G01R31/026
摘要： A conduction condition detecting means which can detect a conduction condition (contact condition) of a plurality of feeding contacts in contact with the conduction portion of a substrate to be plated, and a plating device which can form a plating film with a uniform film thickness by uniformizing plating currents flowing through individual feeding contacts. A plating device which plates a substrate to be plated (12), wherein an electrode (13) and a substrate to be plated (12) mounted to a plating jig (11) are arranged opposite to each other in a plating tank (10), the plating jig (11) is provided with a plurality of feeding contact (15) to come into contact with the conduction portion provided on the surface of the substrate to be plated (12), and a specified voltage is applied between the feeding contacts (15) and the electrode (13) to supply a plating current through the feeding contacts (15), the plating device being provided with a conduction condition detecting means (22) for detecting a conduction condition between individual feeding contacts (15) of the plating jig (11) and the conduction portion of the substrate to be plated (12).
摘要翻译：导电条件检测装置，其能够检测与待镀基板的导电部分接触的多个馈电触点的导电状态（接触状况）;以及电镀装置，其能够通过以下步骤形成具有均匀膜厚度的电镀膜：使流过各个馈电触点的电镀电流均匀化。本发明提供一种电镀装置，该电镀装置在镀槽（10）中对置配置电镀基板（12）的电极（13）和被镀基板（12），电镀夹具（11）设置有多个馈电触点（15），以与设置在待电镀基板（12）的表面上的导电部分接触，并且在馈电触点（15）与电极（13）之间的导电状态检测装置（22），用于通过馈电触点（15）提供电镀电流，所述电镀装置设置有用于检测电镀夹具（11）和待镀基板（12）的导电部分。

63. 发明公开

EP1018568A4 PLATING DEVICE 审中-公开
标题翻译： DEVICE电镀
公开(公告)号：EP1018568A4
公开(公告)日：2006-05-31
申请号：EP99929778
申请日：1999-07-09
申请人： EBARA CORP
发明人： HONGO AKIHISA , SUZUKI KENICHI , CHONO ATSUSHI , TADA MITSUO , OGATA AKIRA , SENDAI SATOSHI , MISHIMA KOJI
IPC分类号： C25D21/12 , G01R31/02
CPC分类号： C25D21/12 , G01R31/026
摘要： The present invention is to provide a conduction detection device that can detect electrical conductivity (contact condition) of feeding contacts with the conductive layers of a substrate. The present invention also provides an electroplating apparatus, which is able to produce uniform currents to flow through each of feeding contacts. The apparatus has a plating vessel (10), in which an electrode (13) is disposed opposite to a substrate (12) which is affixed to a plating jig (11) electrically through a plurality of feeding contacts (15) for applying a specific voltage between the electrode (13) and conductive layers provided on a plating surface of the substrate (12). Plating current flows from the plating jig (11) through the feeding contacts (15) to the substrate (12). A conduction detection device (22) is provided to detect electrical conductive states between the plurality of feeding contacts (15) and the conductive layer on the substrate (12).

64. 发明公开

EP1335038A4 DEVICE AND METHOD FOR ELECTROLESS PLATING 审中-公开
标题翻译： VORRICHTUNG UND VERFAHREN ZUM STROMLOSEN PLATTIEREN
公开(公告)号：EP1335038A4
公开(公告)日：2008-05-14
申请号：EP01978884
申请日：2001-10-24
申请人： EBARA CORP
发明人： HONGO AKIHISA , MISHIMA KOJI , INOUE HIROAKI , KIMURA NORIO , KARIMATA TSUTOMU
IPC分类号： C23C18/16 , C23C18/18 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76843 , C23C18/1619 , C23C18/1669 , C23C18/1678 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： A device and a method for electroless plating; the device capable of easily forming a plating film of uniform thickness on the plated surface of a plated material, comprising a holding part (10) having a heating part (14) and holding the plated material with the plated surface facing downward and a plating bath (24) allowing electroless plating solution (22) with a specified temperature to lead into a plating chamber (28) and holding the solution while allowing the solution to overflow from an overflow weir, wherein the plated material held by the holding part (10) is brought into contact with the plating solution (22) in the plating bath (24) for plating the plated material.
摘要翻译：一种化学镀的装置和方法; 该装置能够容易地在电镀材料的电镀表面上形成均匀厚度的电镀膜，该装置包括具有加热部分（14）并且保持电镀表面朝下的电镀材料的保持部分（10）和电镀浴（24），使规定温度的无电解电镀液（22）流入电镀室（28）内并保持该溶液，同时允许溶液从溢流堰溢出，其中由保持部件（10）保持的电镀材料与镀浴（24）中的镀液（22）接触，以镀覆镀材料。

65. 发明公开

EP1126512A4 WAFER PLATING METHOD AND APPARATUS 审中-公开
标题翻译： ABSCHEIDUNGSMETHODE UND -APPARATFÜRHALBLEITERSCHEIBEN
公开(公告)号：EP1126512A4
公开(公告)日：2007-10-17
申请号：EP99937028
申请日：1999-08-11
申请人： EBARA CORP
发明人： HONGO AKIHISA , OGURE NAOAKI , INOUE HIROAKI , SENDAI SATOSHI , IKEGAMI TETSUMA , MISHIMA KOJI , OKUYAMA SHUICHI , NAGAI MIZUKI , KIMIZUKA RYOICHI , MARUYAMA MEGUMI
IPC分类号： C23C18/16 , C23C18/38 , C25D3/38 , C25D7/12 , H01L21/288 , H01L21/768 , H05K3/10 , H05K3/24 , H05K3/42 , H01L21/3205
CPC分类号： H01L21/76843 , C23C18/1632 , C23C18/1653 , C23C18/1682 , C23C18/38 , C25D3/38 , C25D7/123 , C25D17/001 , H01L21/2885 , H01L21/76873 , H01L21/76874 , H01L21/76877 , H01L2221/1089 , H05K3/107 , H05K3/241 , H05K3/423
摘要： A method for plating through a simple manufacturing process a semiconductor wafer (W) so as to efficiently fill a fine recess (42) for interconnection made in the wafer (W) with a plating metal (43) having little voids and immune to contamination and to create an interconnection, comprising an electroless plating step of forming an initial film (41) on the wafer (W) and an electroplating step of filling the recess by electroplating using the initial film as the electricity feeding layer. An apparatus for plating a semiconductor wafer by such a method is also disclosed.
摘要翻译：一种通过简单的制造工艺对半导体晶片（W）进行电镀的方法，以便利用几乎没有空隙且不受污染的电镀金属（43）在晶片（W）中有效地填充用于互连的微小凹槽（42）包括在晶片（W）上形成初始膜（41）的无电电镀步骤和通过使用初始膜作为电馈送层通过电镀填充凹槽的电镀步骤。还公开了通过这种方法镀覆半导体晶片的设备。

66. 发明公开

EP1179617A4 APPARATUS FOR PLATING SUBSTRATE, METHOD FOR PLATING SUBSTRATE, ELECTROLYTIC PROCESSING METHOD, AND APPARATUS THEREOF 审中-公开
标题翻译：装置和方法电镀的基材，电解处理方法及装置
公开(公告)号：EP1179617A4
公开(公告)日：2007-01-24
申请号：EP00985856
申请日：2000-12-25
申请人： EBARA CORP , TOSHIBA KK
发明人： KUNISAWA JUNJI , ODAGAKI MITSUKO , MAKINO NATSUKI , MISHIMA KOJI , NAKAMURA KENJI , INOUE HIROAKI , KIMURA NORIO , MATSUDA TETSUO , KANEKO HISASHI , HAYASAKA NOBUO , OKUMURA KATSUYA , TSUJIMURA MANABU , MORITA TOSHIYUKI
IPC分类号： C23C18/16 , C25D7/12 , C25D17/12 , C25D17/14 , H01L21/00 , H01L21/288 , H01L21/768 , H05K3/42
CPC分类号： H01L21/6719 , C25D7/123 , C25D17/001 , C25D17/12 , C25D17/14 , H01L21/2885 , H01L21/67046 , H01L21/67051 , H01L21/6708 , H01L21/6715 , H01L21/6723 , H01L21/76877 , H01L21/76879 , H01L2924/0002 , H05K3/423 , H01L2924/00
摘要： An apparatus for plating a substrate by filling a fine interconnection pattern (recess) formed in a semiconductor substrate with a metal such as copper (Cu) comprises a substrate holding section (36) for horizontally holding and rotating a substrate so oriented that the surface to be plate faces up, a sealer (90) that comes into contact with the periphery of the surface to be plated of the held substrate to seal the periphery water-tightly, and a cathode (88) that comes into contact with the substrate to supply current thereto, and further comprises a cathode section (38) rotatable with the substrate holding section (36), an electrode arm section (30) provided horizontally and vertically movably above the cathode section (38) and having an anode (98) oriented down, and plating solution injecting means for injecting a plating solution into the space between the surface to be plated of the held substrate and the anode of the electrode arm section (30) brought near to the surface to be plated. Therefore, the processings including the plating and its collateral processings are carried out by means of a single unit. A method for plating a substrate is also disclosed.

67. 发明专利

DE60141186D1 未知
公开(公告)号：DE60141186D1
公开(公告)日：2010-03-11
申请号：DE60141186
申请日：2001-05-28
申请人： EBARA CORP
发明人： MISHIMA KOJI , KUNISAWA JUNJI , MAKINO NATSUKI , KIMURA NORIO , INOUE HIROAKI , NAKAMURA KENJI , MATSUMOTO MORIJI , NANJO TAKAHIRO , ODAGAKI MITSUKO
IPC分类号： H01L21/00 , H01L21/677 , H01L21/68
摘要： A substrate processing apparatus fills a metal such as copper or the like in fine interconnection patterns or trenches defined in a semiconductor substrate. The substrate processing apparatus has a loading/unloading unit for placing a substrate cassette to load and unload a substrate, a substrate treating unit for treating a substrate, and a transfer robot for transferring a substrate between the loading/unloading unit and the substrate treating unit. The loading/unloading unit, the substrate treating unit, and the transfer robot are installed in a single facility. The loading/unloading unit has a rotary table which is horizontally rotatable for positioning the substrate cassette in a position to detect the substrate cassette placed in the loading/unloading unit and to remove the substrate from the substrate cassette with the transfer robot.

69. 发明公开

EP1029954A4 SUBSTRATE PLATING DEVICE 审中-公开
标题翻译： SUBSTRATBESCHICHTUNGSVORRICHTUNG
公开(公告)号：EP1029954A4
公开(公告)日：2006-07-12
申请号：EP99943206
申请日：1999-09-08
申请人： EBARA CORP
发明人： HONGO AKIHISA , OGURE NAOAKI , UEYAMA HIROYUKI , YAMAKAWA JUNITSU , NAGAI MIZUKI , SUZUKI KENICHI , CHONO ATSUSHI , SENDAI SATOSHI , MISHIMA KOJI
IPC分类号： C25D7/12 , C25D17/00 , C25D21/14
CPC分类号： C25D21/14 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02
摘要： A substrate plating device capable of using an insoluble anode and replenishing metal ions automatically; a substrate plating device capable of making uniform a primary current distribution between a cathode and an anode and downsizing the device itself; and a plating device with which black film turned into a particle form does not contaminate a substrate to be plated even when a soluble anode is used. A substrate plating device, wherein a substrate to be metal-plated and an insoluble anode are disposed opposite to each other in a plating tank containing a plating solution, wherein soluble anode and cathode are disposed opposite to each other in a circulation tank or a dummy tank provided separately from the plating tank and an anion exchange membrane or a cation selective exchange membrane are disposed between the anode and the cathode. Current is allowed to run between the separately disposed anode and cathode to thereby generate metal ions continuously for replenishing into the plating tank. In addition, an ion exchange membrane or a porous neutral barrier membrane is disposed between a substrate to be plated and an anode to provide a substrate-to-be-plated side area and an anode side area separated from each other.
摘要翻译：本发明的目的是提供一种使用不溶性阳极的基板电镀装置，特别是能够容易且自动地供给金属离子的基板电镀装置。本发明的另一个目的是提供一种能够在阴极和阳极之间提供均匀的初级电流分布并且有助于减小电镀装置的尺寸的基板电镀装置。本发明的另一个目的是提供一种能够防止基板被黑色膜产生的颗粒污染的电镀装置，即使使用可溶性阳极也是如此。本发明涉及一种用于在含有电镀液的电镀液中电镀基板的基板电镀装置，在与基板相对的电镀槽中设置不溶性阳极，所述基板电镀装置包括：循环容器或虚拟容器，与电镀浴，可溶性阳极和阴极设置在循环容器或虚拟容器中，阴离子交换膜或选择性阳离子交换膜设置在阳极和阴极之间并将其隔离; 其中通过在可溶性阳极和阴极之间流动电流而在循环容器或虚拟容器中产生金属离子，并将所产生的金属离子供应到镀浴。基板电镀装置包括在电镀槽中设置在基板和阳极之间的离子交换膜或中性多孔隔膜; 其中所述离子交换膜或中性多孔隔膜将所述镀浴分为衬底区域和阳极区域。

70. 发明专利

JP2002285343A ELECTROLESS PLATING APPARATUS 审中-公开
公开(公告)号：JP2002285343A
公开(公告)日：2002-10-03
申请号：JP2001377874
申请日：2001-12-11
申请人： EBARA CORP
发明人： HONGO AKIHISA , MISHIMA KOJI , KIMURA NORIO , ABE KENICHI , O CHIKAAKI
IPC分类号： C23C18/31 , H01L21/02 , H01L21/288 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide an electroless plating device, with which it becomes possible to easily form a plated film having a uniform thickness on the surface to be plated of a material to be plated. SOLUTION: This electroless plating device has a heating part 14, a holding part 10 for holding a material W to be plated in such a manner that the surface S to be plated is directed downward, and a plating tank 24 which is arranged at the lower part of the holding part 10, introduces an electroless plating liquid 22 having a prescribed temperature and being directed upward into the inside of a plating chamber 28 and holds the electroless plating liquid 22 while allowing the liquid 22 to overflow an overflow weir 30. Plating is carried out by bringing the material W to be plated held by the holding part 10 into contact with the plating liquid 22 in the plating tank 24.

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