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61. 发明申请

US20070023320A1 Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit 审中-公开
标题翻译：晶片保持器，具有晶片保持器的加热器单元和具有加热器单元的晶片探测器
公开(公告)号：US20070023320A1
公开(公告)日：2007-02-01
申请号：US11492223
申请日：2006-07-25
申请人： Katsuhira Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Kenji Shinma
发明人： Katsuhira Itakura , Masuhiro Natsuhara , Tomoyuki Awazu , Hirohiko Nakata , Kenji Shinma
IPC分类号： B65D85/00
CPC分类号： H01L21/68757 , H01L21/67103
摘要： A wafer holder hardly deformable under high load and capable of effectively preventing a contact failure with a wafer and further capable of preventing temperature increase of a driving system of a wafer prober is provided. In a wafer holder having a chuck top and a supporter, variation in thickness of the chuck top from a wafer-mounting surface to a contact surface with the supporter, and variation in thickness of the supporter from a bottom surface to a contact surface with the chuck top are both set to at most 50 μm. When the supporter is of a structure having a circular tube portion and a base portion separate from each other, variation in thickness of the circular tube portion from a contact surface with the chuck top to a contact surface with the base portion, and variation in thickness of the base portion from a bottom surface to a contact surface with the circular tube portion are preferably both set to at most 25 μm.
摘要翻译：晶片保持器在高负载下几乎不变形，并且能够有效地防止与晶片的接触故障，并且还能够防止晶片探测器的驱动系统的温度升高。在具有卡盘顶部和支撑件的晶片保持器中，卡盘顶部从晶片安装表面到支撑件的接触表面的厚度变化，以及支撑件从底表面到接触表面的厚度的变化卡盘顶部都设定为最多50马姆。当支撑体具有圆形管部分和基部彼此分离的结构时，圆形管部分从与卡盘顶部的接触表面到与基部的接触表面的厚度的变化以及厚度的变化从底面到与圆管部分的接触表面的底部部分优选地设定为至多25μm。

62. 发明申请

US20060186904A1 Wafer holder for wafer prober and wafer prober equipped with the same 有权
标题翻译：用于晶圆探针和晶圆探测器的晶片支架配备相同
公开(公告)号：US20060186904A1
公开(公告)日：2006-08-24
申请号：US11287847
申请日：2005-11-29
申请人： Masuhiro Natsuhara , Katsuhiro Itakura , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Katsuhiro Itakura , Hirohiko Nakata
IPC分类号： G01R31/02
CPC分类号： G01R31/2886 , G01R31/2891
摘要： The invention provides a wafer-prober wafer holder that allows positional precision and temperature uniformity to be increased, and also allows the chip to be heated and cooled rapidly, and a wafer prober device provided with the same. The wafer-prober wafer holder of the invention is constituted by a chuck top having a chuck top conducting layer on its surface, and a support member for supporting the chuck top, and has a cavity in a portion between the chuck top and the support member. The chuck top preferably is provided with a heating member.
摘要翻译：本发明提供了一种能够提高位置精度和温度均匀性的晶片探针晶片保持器，并且还允许芯片被快速加热和冷却，以及提供其的晶片探测器装置。本发明的晶片探针晶片保持器由其表面上具有卡盘顶部导电层的卡盘顶板和用于支撑卡盘顶部的支撑件构成，并且在卡盘顶部和支撑件之间的部分中具有空腔。卡盘顶部优选地设置有加热构件。

63. 发明申请

US20050274325A1 Semiconductor heating apparatus 失效
标题翻译：半导体加热装置
公开(公告)号：US20050274325A1
公开(公告)日：2005-12-15
申请号：US11099987
申请日：2005-04-05
申请人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
发明人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
IPC分类号： G01R31/26 , C23C16/00 , G01R31/30 , H01L21/00 , H01L21/02 , H01L21/66 , H01L21/68 , H01L21/683 , H05B3/06 , H05B3/10 , H05B3/20 , H05B3/68 , H05B3/74
CPC分类号： H01L21/67109 , H01L21/67103
摘要： The present invention provides a semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The present invention is a semiconductor heating apparatus, comprising a heating part for mounting and heating the workpiece, a support part which supports the heating part, and a cooling module which contacts the support part. A plurality of heating parts and supporting parts are joined together. The workpiece mounting surfaces of the plurality of heating parts are preferably constructed in the same plane. In addition, there is preferably a thermal insulating material distributed underneath the support part. The heating part is preferably a ceramic heater.
摘要翻译：本发明提供一种半导体加热装置，其中，当测量形成在大尺寸晶片上的多个芯片的电特性时，只有一个或几个芯片被均匀地加热，并且其它芯片在低温待机。本发明是一种半导体加热装置，包括用于安装和加热工件的加热部件，支撑加热部件的支撑部件和与支撑部件接触的冷却模块。多个加热部和支撑部接合在一起。多个加热部的工件安装面优选构成为同一平面。此外，优选地，分布在支撑部分下方的绝热材料。加热部件优选为陶瓷加热器。

64. 发明申请

US20050241584A1 Ceramics heater for semiconductor production system 审中-公开
标题翻译：陶瓷加热器用于半导体生产系统
公开(公告)号：US20050241584A1
公开(公告)日：2005-11-03
申请号：US10501791
申请日：2003-03-20
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： H05B3/20 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/687 , H05B3/10 , H05B3/12 , H05B3/14 , H05B3/74 , C23C16/00
CPC分类号： H01L21/68757 , H01L21/67103 , H05B3/143
摘要： For semiconductor manufacturing equipment a ceramic susceptor is made available in which by optimizing the inter-wiring-line separation in the resistive heating element, damage due to shorting between resistive heating element lines during heating operations is prevented while wafer-surface temperature uniformity is maintained. The ceramic susceptor (1) for semiconductor manufacturing equipment has a resistive heating element (3a) on a surface of or inside ceramic substrate (2), with the smallest angle θ formed by the bottom and lateral sides of the resistive heating element (3a) In a section of the resistive heating element (3a) being 5° or greater. A plasma electrode may be arranged on a surface of or inside the ceramic substrates (2a) of the ceramic susceptor (1). The ceramic substrates (2a) are preferably made of at least one selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.
摘要翻译：对于半导体制造设备，可以提供陶瓷感受体，其中通过优化电阻加热元件中的布线间隔离，防止在加热操作期间电阻加热元件线之间短路导致的损坏，同时保持晶片表面温度均匀性。用于半导体制造设备的陶瓷感受体（1）在陶瓷基板（2）的表面或内部具有电阻加热元件（3a），其中由电阻加热元件（3）的底部和侧面形成的最小的角度θ a）电阻加热元件（3a）的一部分为5°或更大。等离子体电极可以布置在陶瓷基座（1）的陶瓷基板（2a）的表面上或内部。陶瓷基板（2a）优选由选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种制成。

65. 发明申请

US20050184055A1 Heater and heating device 失效
标题翻译：加热器和加热装置
公开(公告)号：US20050184055A1
公开(公告)日：2005-08-25
申请号：US10987292
申请日：2004-11-15
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Kenji Shinma
IPC分类号： H05B3/20 , H01L21/00 , H01L21/205 , H01L21/3065 , H05B3/10 , H05B3/14 , H05B3/28 , H05B3/74
CPC分类号： H01L21/67103 , H05B3/143
摘要： In a heater member executing a heat process with a heat subject placed thereon, and a heat processor using the same, the power supply is reduced to achieve energy conservation, a damage risk to be caused by the thermal stress is eliminated, and the wiring design flexibility is increased for a heat-generating circuit section. Furthermore, the heat uniformity capability is increased, and the reliability is increased by preventing short-circuit accidents. At least entirely over the surface of a heat-subject-placing surface of a heater substrate 2, a low-radiation-rate film 10 made of a material whose radiation rate is lower than that of the heater substrate 2 is formed. By applying patterning to the low-radiation-rate film 10, the exposure rate of the heater substrate 2 is changed on the heat-subject-placing surface. Specifically, the radiation rate is varied in a manner such that the radiation rate becomes smaller from the center part of the heat-subject-placing surface toward the outer peripheral part thereof.
摘要翻译：在进行热处理的加热部件中，在加热部件上设置有加热对象的加热器部件和使用该加热部件的热处理器，减少电力供应，实现节能，消除由热应力引起的损害风险，发热电路部分的灵活性增加。此外，通过防止短路事故，增加了热均匀性，提高了可靠性。至少完全在加热器基板2的热对象放置表面的表面上形成由辐射率低于加热器基板2的材料制成的低辐射率膜10。通过向低辐射率膜10施加图案，加热基板2的曝光率在热对象放置面上发生变化。具体地说，辐射速率以从热被摄体放置面的中心部朝向其外周部的放射率变小的方式变化。

66. 发明申请

US20050184054A1 Ceramics heater for semiconductor production system 审中-公开
标题翻译：陶瓷加热器用于半导体生产系统
公开(公告)号：US20050184054A1
公开(公告)日：2005-08-25
申请号：US10501744
申请日：2003-03-20
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： H05B3/20 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/3065 , H05B3/10 , H05B3/12 , H05B3/14 , H05B3/74 , H05B3/02
CPC分类号： H01L21/67103 , H05B3/143
摘要： Affords ceramic susceptors, for semiconductor manufacturing equipment, in which wafer-surface isothermal quality during heating operations is heightened by enhancing the degree of planarization of the susceptor wafer-carrying face in its high-temperature region where wafers are processed in the course of manufacturing semiconductors. Ceramic susceptor (1) for semiconductor manufacturing equipment has in the surface or interior of ceramic substrates (2a) and (2b) resistive heating element (3), and a non-heating (ordinary-temperature) arched contour in its wafer-carrying face is a concavity of 0.001 to 0.7 mm per 300 mm. A plasma electrode furthermore may be disposed in ceramic susceptor 1, in the surface or interior of ceramic substrates (2a) and (2b). Preferably, moreover, ceramic substrates (2a) and (2b) are at least one ceramic selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.
摘要翻译：提供用于半导体制造设备的陶瓷感受器，其中在加热操作期间的晶片表面等温质量通过提高在制造半导体的过程中处理晶片的高温区域中的基座晶片承载面的平坦化程度来提高。用于半导体制造设备的陶瓷基座（1）在陶瓷基板（2a）和（2b）电阻加热元件（3）的表面或内部，以及在其晶片制造设备中的非加热（常温）承载面为0.001〜0.7mm / 300mm的凹度。此外，等离子体电极可以设置在陶瓷基座1中，陶瓷基板（2a）和（2b）的表面或内部。此外，优选地，陶瓷基板（2a）和（2b）是选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种陶瓷。

67. 发明申请

US20050160988A1 Semiconductor-producing apparatus 审中-公开
标题翻译：半导体制造装置
公开(公告)号：US20050160988A1
公开(公告)日：2005-07-28
申请号：US11029408
申请日：2005-01-06
申请人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
发明人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
IPC分类号： H01L21/02 , C23C16/00 , C23C16/458 , C23C16/46 , H01L21/00
CPC分类号： H01L21/67109 , C23C16/4586 , C23C16/46
摘要： A semiconductor-producing apparatus increases both the cooling rate of the heater and the uniformity in the temperature distribution of the heater. The semiconductor-producing apparatus of the present invention is provided with a heater for heat-treating a semiconductor wafer and a cooling block for cooling the heater. The cooling block is provided with at least one through hole for inserting a penetrating object. The distance from the inner surface of the or each through hole to the penetrating object is at most 50 mm. The cooling block is arranged such that it can both make contact with and separate from the heater's face opposite to the face for placing the wafer. The foregoing penetrating object is a current-feeding electrode for feeding current to the heater circuit, a temperature-measuring means, or the like.
摘要翻译：半导体制造装置增加了加热器的冷却速度和加热器的温度分布的均匀性。本发明的半导体制造装置设置有用于对半导体晶片进行热处理的加热器和用于冷却加热器的冷却块。冷却块设置有用于插入穿透物体的至少一个通孔。从该贯通孔的内表面到穿透物的距离为50mm以下。冷却块被布置成使得其可以与加热器的与面的相反的面接触并与其分离以放置晶片。上述穿透物体是用于将电流馈送到加热器电路的电流馈送电极，温度测量装置等。

68. 发明申请

US20050028739A1 Semiconductor Manufacturing Apparatus 审中-公开
标题翻译：半导体制造装置
公开(公告)号：US20050028739A1
公开(公告)日：2005-02-10
申请号：US10710841
申请日：2004-08-06
申请人： Masuhiro Natsuhara , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Hirohiko Nakata
IPC分类号： C23C16/00 , C23C16/458 , H01L21/68 , H01L21/683
CPC分类号： C23C16/4586 , C23C16/4581
摘要： According to the present invention, a wafer holder is supported by support pieces mounted on a pedestal and is installed within the processing chamber of a semiconductor manufacturing device, wherein the lift pins are set up anchored to the semiconductor-manufacturing-device chamber and the pedestal is driven vertically, thereby running the wafer holder up/down to thrust the lift pins out from, or retract them into, the top side of the wafer holder, which makes it possible to dechuck wafers from and pocket them into the holder. Consequently, leveling the height of the tip ends of the plurality of lift pins is facilitated and synchronization problems are completely eliminated besides, which thus makes it possible to prevent wafer drop-off during wafer dechucking/pocketing. And since a mechanism for synchronously driving the plural lift pins up/down is unnecessary, the device overall can be made more compact.
摘要翻译：根据本发明，晶片保持器由安装在基座上的支撑件支撑并安装在半导体制造装置的处理室内，其中提升销被固定在半导体制造装置室和基座被垂直驱动，从而使晶片保持器上/下移动以将提升销推出或者将其退回到晶片保持器的顶侧，这使得可以将晶片从其中取出并将其包入保持器中。因此，除了多个提升销的顶端的高度以外，还能够完全消除同步问题，从而可以防止晶片脱胶/贴片期间的晶片脱落。并且，由于不需要同时驱动多个提升销的机构，因此能够使装置整体更加紧凑。

69. 发明授权

US06783867B2 Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same 失效
标题翻译：使用氮化铝衬底材料的半导体器件的构件及其制造方法
公开(公告)号：US06783867B2
公开(公告)日：2004-08-31
申请号：US10454288
申请日：2003-06-04
申请人： Kazutaka Sasaki , Hirohiko Nakata , Akira Sasame , Mitsunori Kobayashi
发明人： Kazutaka Sasaki , Hirohiko Nakata , Akira Sasame , Mitsunori Kobayashi
IPC分类号： H01L2314
CPC分类号： H01L23/498 , H01L23/49822 , H01L24/48 , H01L2224/05599 , H01L2224/45099 , H01L2224/48091 , H01L2224/8547 , H01L2924/00014 , H01L2924/01019 , H01L2924/01078 , H01L2924/01322 , H01L2924/15747 , H05K3/38 , Y10T428/12528 , Y10T428/12576 , Y10T428/12806 , Y10T428/12812 , Y10T428/1291 , Y10T428/24917 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000° C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire metallization.
摘要翻译：一种半导体器件的高可靠性部件，其中主要由诸如W和/或Mo的高熔点金属组成的高熔点金属化层和熔点不大于 1000℃，并且主要由选自Ni，Cu和Fe中的至少一种组成，在AlN衬底材料上依次设置在AlN衬底材料上，并且主要由铜组成的导体层直接结合到中间金属层而不介入焊料层。半导体元件等安装在半导体器件用部件上，制造半导体器件。高熔点金属化层通过后火或共火金属化在氮化铝衬底上形成。

70. 发明授权

US06716304B2 Wafer holder for semiconductor manufacturing apparatus, and method of manufacturing the wafer holder 失效
标题翻译：用于半导体制造装置的晶片保持器，以及晶片保持器的制造方法
公开(公告)号：US06716304B2
公开(公告)日：2004-04-06
申请号：US10309402
申请日：2002-12-03
申请人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
发明人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
IPC分类号： H05H100
CPC分类号： H01L21/6835 , C04B37/005 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2237/06 , C04B2237/062 , C04B2237/064 , C04B2237/066 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/123 , C04B2237/125 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/567 , C04B2237/62 , C04B2237/66 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/80 , H01L21/4857 , H01L21/67103 , C04B41/0072 , C04B41/4539 , C04B41/4572 , C04B41/5133 , C04B41/5022 , C04B35/581
摘要： A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.
摘要翻译：用于半导体制造装置的晶片保持器具有高导热性。晶片保持器包括烧结陶瓷片，可以在烧结陶瓷片的至少一个表面上高精度地形成的加热器电路图案的导电层和形成在烧结陶瓷片上的导电层上的保护层以覆盖导电层的表面。保护层可以包含玻璃，诸如氮化铝或氮化硅的非氧化物陶瓷，镱，钕和钙的氧化物，或钇和铝的氧化物。在制造晶片保持器的方法中，将含有金属颗粒的糊剂施加在烧结陶瓷片的表面上，并且被烧制以形成作为导电层的加热器电路图案。然后在烧结陶瓷片上形成保护层以覆盖导电层的表面。

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