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1. 发明授权

US07491432B2 Ceramic susceptor for semiconductor manufacturing equipment 有权
标题翻译：陶瓷感受器用于半导体制造设备
公开(公告)号：US07491432B2
公开(公告)日：2009-02-17
申请号：US10605764
申请日：2003-10-24
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： B32B9/00
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68735 , H05B3/143 , Y10T428/131
摘要： For semiconductor manufacturing equipment, a ceramic susceptor that without occurrence of cracking in the course of heating wafers suppresses thermal radiation from the circumferential surface of a wafer placed on the ceramic susceptor, to heighten isothermal quality in the wafer face. A semiconductor-manufacturing-equipment ceramic susceptor (1) including a resistive heating element (3) in the face or interior of ceramic substrates (2a, 2b) has a wafer pocket (5) consisting of a recess that can accommodatingly carry a wafer. The angle that the perimetric inside surface and the bottom face of the wafer pocket (5) form is over 90° and 170° or less, and/or the curvature of the bottom-portion circumferential rim where the perimetric inside surface and the bottom face of the pocket join is 0.1 mm or more. A plasma electrode furthermore may be disposed in the face or interior of the ceramic substrates (2a, 2b) of the ceramic susceptor (1).
摘要翻译：对于半导体制造设备，在加热晶片的过程中不发生开裂的陶瓷基座抑制来自放置在陶瓷基座上的晶片的圆周表面的热辐射，以提高晶片表面的等温质量。在陶瓷基板（2a，2b）的表面或内部包括电阻加热元件（3）的半导体制造设备陶瓷基座（1）具有由可以容纳地携带晶片的凹部构成的晶片槽（5）。晶片槽（5）的周边内表面和底面形成的角度超过90°和170°或更小，和/或底部周缘的曲率，其中周边内表面和底面的口袋连接为0.1mm以上。此外，等离子体电极可以设置在陶瓷基座（1）的陶瓷基板（2a，2b）的表面或内部。

2. 发明申请

US20060177697A1 CERAMIC SUSCEPTOR FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT 有权
标题翻译：陶瓷制造半导体制造设备
公开(公告)号：US20060177697A1
公开(公告)日：2006-08-10
申请号：US10605764
申请日：2003-10-24
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： B32B13/04 , B32B9/00 , B32B19/00
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68735 , H05B3/143 , Y10T428/131
摘要： For semiconductor manufacturing equipment, a ceramic susceptor that without occurrence of cracking in the course of heating wafers suppresses thermal radiation from the circumferential surface of a wafer placed on the ceramic susceptor, to heighten isothermal quality in the wafer face. A semiconductor-manufacturing-equipment ceramic susceptor (1) including a resistive heating element (3) in the face or interior of ceramic substrates (2a, 2b) has a wafer pocket (5) consisting of a recess that can accommodatingly carry a wafer. The angle that the perimetric inside surface and the bottom face of the wafer pocket (5) form is over 90° and 170° or less, and/or the curvature of the bottom-portion circumferential rim where the perimetric inside surface and the bottom face of the pocket join is 0.1 mm or more. A plasma electrode furthermore may be disposed in the face or interior of the ceramic substrates (2a, 2b) of the ceramic susceptor (1).
摘要翻译：对于半导体制造设备，在加热晶片的过程中不发生开裂的陶瓷基座抑制来自放置在陶瓷基座上的晶片的圆周表面的热辐射，以提高晶片表面的等温质量。在陶瓷基板（2a，2b）的表面或内部包括电阻加热元件（3）的半导体制造设备陶瓷基座（1）具有晶片槽（5），该凹槽由可容纳地携带晶圆。晶片槽（5）的周边内表面和底面形成的角度超过90°和170°或更小，和/或底部周缘的曲率，其中周边内表面和底面的口袋连接为0.1mm以上。此外，等离子体电极可以设置在陶瓷基座（1）的陶瓷基板（2a，2b）的表面或内部。

3. 发明申请

US20050167422A1 Ceramics heater for semiconductor production system 审中-公开
标题翻译：陶瓷加热器用于半导体生产系统
公开(公告)号：US20050167422A1
公开(公告)日：2005-08-04
申请号：US10500736
申请日：2003-03-20
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： H05B3/20 , H01L21/00 , H01L21/02 , H01L21/687 , H05B3/10 , H05B3/12 , H05B3/14 , H05B3/18 , H05B3/74
CPC分类号： H01L21/68757 , H01L21/67103 , H05B3/143
摘要： For semiconductor manufacturing equipment a ceramic susceptor is made available in which the temperature uniformity in the surface of a wafer during heating operations is enhanced by keeping fluctuations in the shape of the susceptor—particularly in the outer diameter along the thickness at normal temperature—under control. The ceramic susceptor (1) for semiconductor manufacturing equipment has a resistive heating element (3) on a surface of or inside ceramic substrates (2a), (2b). The difference between the maximum outer diameter and minimum outer diameter along the thickness of the ceramic susceptor when not heating is 0.8% or less of the average diameter along the wafer-support side. A plasma electrode may be arranged on a surface of or inside the ceramic substrates (2a), (2b) of the ceramic susceptor (1). The ceramic substrates (2a), (2b) are preferably made of at least one selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.
摘要翻译：对于半导体制造设备，可以提供陶瓷感受体，其中通过保持基座形状的波动（特别是在正常温度下的厚度的外径）来控制加热操作期间晶片表面的温度均匀性 - 在控制下。用于半导体制造设备的陶瓷感受体（1）在陶瓷基板（2a），（2b）的表面上或内部具有电阻加热元件（3）。沿着不加热时的陶瓷基座的厚度的最大外径和最小外径之间的差异为晶片支撑侧的平均直径的0.8％以下。等离子体电极可以布置在陶瓷基座（1）的陶瓷基板（2a），（2b）的表面上或内部。陶瓷基板（2a），（2b）优选由选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种制成。

4. 发明申请

US20050241584A1 Ceramics heater for semiconductor production system 审中-公开
标题翻译：陶瓷加热器用于半导体生产系统
公开(公告)号：US20050241584A1
公开(公告)日：2005-11-03
申请号：US10501791
申请日：2003-03-20
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： H05B3/20 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/687 , H05B3/10 , H05B3/12 , H05B3/14 , H05B3/74 , C23C16/00
CPC分类号： H01L21/68757 , H01L21/67103 , H05B3/143
摘要： For semiconductor manufacturing equipment a ceramic susceptor is made available in which by optimizing the inter-wiring-line separation in the resistive heating element, damage due to shorting between resistive heating element lines during heating operations is prevented while wafer-surface temperature uniformity is maintained. The ceramic susceptor (1) for semiconductor manufacturing equipment has a resistive heating element (3a) on a surface of or inside ceramic substrate (2), with the smallest angle θ formed by the bottom and lateral sides of the resistive heating element (3a) In a section of the resistive heating element (3a) being 5° or greater. A plasma electrode may be arranged on a surface of or inside the ceramic substrates (2a) of the ceramic susceptor (1). The ceramic substrates (2a) are preferably made of at least one selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.
摘要翻译：对于半导体制造设备，可以提供陶瓷感受体，其中通过优化电阻加热元件中的布线间隔离，防止在加热操作期间电阻加热元件线之间短路导致的损坏，同时保持晶片表面温度均匀性。用于半导体制造设备的陶瓷感受体（1）在陶瓷基板（2）的表面或内部具有电阻加热元件（3a），其中由电阻加热元件（3）的底部和侧面形成的最小的角度θ a）电阻加热元件（3a）的一部分为5°或更大。等离子体电极可以布置在陶瓷基座（1）的陶瓷基板（2a）的表面上或内部。陶瓷基板（2a）优选由选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种制成。

5. 发明申请

US20050184054A1 Ceramics heater for semiconductor production system 审中-公开
标题翻译：陶瓷加热器用于半导体生产系统
公开(公告)号：US20050184054A1
公开(公告)日：2005-08-25
申请号：US10501744
申请日：2003-03-20
申请人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
发明人： Yoshifumi Kachi , Akira Kuibira , Hirohiko Nakata
IPC分类号： H05B3/20 , H01L21/00 , H01L21/02 , H01L21/205 , H01L21/3065 , H05B3/10 , H05B3/12 , H05B3/14 , H05B3/74 , H05B3/02
CPC分类号： H01L21/67103 , H05B3/143
摘要： Affords ceramic susceptors, for semiconductor manufacturing equipment, in which wafer-surface isothermal quality during heating operations is heightened by enhancing the degree of planarization of the susceptor wafer-carrying face in its high-temperature region where wafers are processed in the course of manufacturing semiconductors. Ceramic susceptor (1) for semiconductor manufacturing equipment has in the surface or interior of ceramic substrates (2a) and (2b) resistive heating element (3), and a non-heating (ordinary-temperature) arched contour in its wafer-carrying face is a concavity of 0.001 to 0.7 mm per 300 mm. A plasma electrode furthermore may be disposed in ceramic susceptor 1, in the surface or interior of ceramic substrates (2a) and (2b). Preferably, moreover, ceramic substrates (2a) and (2b) are at least one ceramic selected from aluminum nitride, silicon nitride, aluminum oxynitride, and silicon carbide.
摘要翻译：提供用于半导体制造设备的陶瓷感受器，其中在加热操作期间的晶片表面等温质量通过提高在制造半导体的过程中处理晶片的高温区域中的基座晶片承载面的平坦化程度来提高。用于半导体制造设备的陶瓷基座（1）在陶瓷基板（2a）和（2b）电阻加热元件（3）的表面或内部，以及在其晶片制造设备中的非加热（常温）承载面为0.001〜0.7mm / 300mm的凹度。此外，等离子体电极可以设置在陶瓷基座1中，陶瓷基板（2a）和（2b）的表面或内部。此外，优选地，陶瓷基板（2a）和（2b）是选自氮化铝，氮化硅，氮氧化铝和碳化硅中的至少一种陶瓷。

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