专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050253285A1 Supporting unit for semiconductor manufacturing device and semiconductor manufacturing device with supporting unit installed 审中-公开
标题翻译：用于半导体制造装置和半导体制造装置的支撑单元，其中安装有支撑单元
公开(公告)号：US20050253285A1
公开(公告)日：2005-11-17
申请号：US11114867
申请日：2005-04-26
申请人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
发明人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
IPC分类号： H05B3/06 , C04B37/00 , C23C14/50 , C23C16/458 , H01L21/00 , H01L21/02 , H01L21/265 , H01L21/31 , H01L21/68 , H01L21/683 , H01L23/28 , H05B3/10 , H05B3/12 , H05B3/74
CPC分类号： H01L21/67103 , C23C16/4581
摘要： The present invention provides a supporting unit for semiconductor manufacturing device and semiconductor manufacturing device with supporting unit installed wherein there is high thermal uniformity in the support surface for the workpiece and strain to the support section and the support body is prevented. The supporting unit for semiconductor manufacturing device includes: a ceramic support section supporting a workpiece installed in a chamber of a semiconductor manufacturing device; and a hollow support body supporting the support section. The ceramic support section and the support body are hermetically bonded. Either the support body and the chamber are in contact with each other by way of a material with a thermal conductivity lower than that of the support body or the section of the chamber that comes into contact with the support body is a material with a thermal conductivity lower than that of the support body.
摘要翻译：本发明提供了一种用于半导体制造装置和半导体制造装置的支撑单元，其具有支撑单元，其中在工件的支撑表面中具有高的热均匀性，并且防止了对支撑部的应变，并且防止了支撑体。用于半导体制造装置的支撑单元包括：陶瓷支撑部，其支撑安装在半导体制造装置的室中的工件; 以及支撑所述支撑部的中空支撑体。陶瓷支撑部和支撑体被气密地接合。支撑体和腔室之间通过导热率低于支撑体的热导率的材料彼此接触，或者与支撑体接触的室的部分是具有导热性的材料比支撑体低。

2. 发明授权

US07361230B2 Substrate processing apparatus 失效
标题翻译：基板加工装置
公开(公告)号：US07361230B2
公开(公告)日：2008-04-22
申请号：US10119955
申请日：2002-04-09
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
IPC分类号： H01L21/00 , C23C16/00
CPC分类号： H01L21/67103 , C23C16/4581 , C23C16/4586 , H01L21/68714 , Y10T279/23
摘要： In the substrate processing apparatus, a ceramic module for mounting a substrate has a flat plate portion having an electric circuitry and a ceramic base body, and as at least a part of a surface of the flat plate portion other than the surface mounting the substrate is in contact with a chamber, it is supported by the chamber. Thus, a substrate processing apparatus can be provided which improves thermal uniformity, reduces cost, is suitable for size reduction of the apparatus and which can ease restrictions in mounting a power supply conductive member or the like.
摘要翻译：在基板处理装置中，用于安装基板的陶瓷模块具有具有电路和陶瓷基体的平板部分，并且作为安装基板的表面以外的平板部分的至少一部分表面，与腔室接触，它由腔室支撑。因此，可以提供提高热均匀性，降低成本的衬底处理装置，适合于装置的尺寸减小，并且可以减轻安装电源导电构件等的限制。

3. 发明授权

US07268322B2 Semiconductor heating apparatus 失效
标题翻译：半导体加热装置
公开(公告)号：US07268322B2
公开(公告)日：2007-09-11
申请号：US11099987
申请日：2005-04-05
申请人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
发明人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
IPC分类号： H05B3/68 , C23C16/00
CPC分类号： H01L21/67109 , H01L21/67103
摘要： A semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The semiconductor heating apparatus includes a heating part for mounting and heating the workpiece, a support part which supports the heating part, and a cooling module which contacts the support part. A plurality of heating parts and supporting parts are joined together. The workpiece mounting surfaces of the plurality of heating parts are preferably constructed in the same plane. In addition, there is preferably a thermal insulating material distributed underneath the support part. The heating part is preferably a ceramic heater.
摘要翻译：一种半导体加热装置，其中，当测量形成在大尺寸晶片上的多个芯片的电特性时，只有一个或几个芯片被均匀地加热，而另一个芯片在低温待机。半导体加热装置包括用于安装和加热工件的加热部件，支撑加热部件的支撑部件和与支撑部件接触的冷却模块。多个加热部和支撑部接合在一起。多个加热部的工件安装面优选构成为同一平面。此外，优选地，分布在支撑部分下方的绝热材料。加热部件优选为陶瓷加热器。

4. 发明申请

US20050263516A1 Heating device 审中-公开
标题翻译：加热装置
公开(公告)号：US20050263516A1
公开(公告)日：2005-12-01
申请号：US11140668
申请日：2005-05-27
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
IPC分类号： H05B3/20 , F27B17/00 , F27D11/00 , F27D99/00 , H01L21/00 , H01L21/02 , H01L21/66 , H01L21/68 , H01L21/683 , H05B3/06 , H05B3/10 , H05B3/74
CPC分类号： F27D99/0006 , F27B17/0025 , F27D2099/0008 , H01L21/67103
摘要： The present invention provides a heating device which is rigid with little likelihood of warping. The workpiece mounting surface has a high thermal conductivity, and there is improved heat uniformity, and rapid cooling is possible. The heating device of the present invention comprises: a mounting part for mounting the workpiece; a heating part which has a resistance heating element and which heats the mounting part; and a support part which supports the mounting part and heating part. The Young's modulus for each of the mounting part and support part is 100 GPa or greater. By having a Young's modulus of 100 GPa or greater, even if the mounting part is thin, there is little deformation when pressed by a probe card.
摘要翻译：本发明提供一种加热装置，该加热装置具有几乎不变形的刚性。工件安装面具有高导热性，并且具有改善的热均匀性，并且可以进行快速冷却。本发明的加热装置包括：用于安装工件的安装部件; 加热部，其具有电阻加热元件，并加热所述安装部; 以及支撑安装部和加热部的支撑部。每个安装部分和支撑部分的杨氏模量为100GPa或更大。通过具有100GPa以上的杨氏模量，即使安装部分较薄，当由探针卡按压时几乎没有变形。

5. 发明申请

US20050274325A1 Semiconductor heating apparatus 失效
标题翻译：半导体加热装置
公开(公告)号：US20050274325A1
公开(公告)日：2005-12-15
申请号：US11099987
申请日：2005-04-05
申请人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
发明人： Akira Kuibira , Hirohiko Nakata , Kenji Shinma
IPC分类号： G01R31/26 , C23C16/00 , G01R31/30 , H01L21/00 , H01L21/02 , H01L21/66 , H01L21/68 , H01L21/683 , H05B3/06 , H05B3/10 , H05B3/20 , H05B3/68 , H05B3/74
CPC分类号： H01L21/67109 , H01L21/67103
摘要： The present invention provides a semiconductor heating apparatus, in which, when measuring the electrical properties of multiple chips formed on a large size wafer, only one or a several chips are heated uniformly, and the other chips are on standby at a low temperature. The present invention is a semiconductor heating apparatus, comprising a heating part for mounting and heating the workpiece, a support part which supports the heating part, and a cooling module which contacts the support part. A plurality of heating parts and supporting parts are joined together. The workpiece mounting surfaces of the plurality of heating parts are preferably constructed in the same plane. In addition, there is preferably a thermal insulating material distributed underneath the support part. The heating part is preferably a ceramic heater.
摘要翻译：本发明提供一种半导体加热装置，其中，当测量形成在大尺寸晶片上的多个芯片的电特性时，只有一个或几个芯片被均匀地加热，并且其它芯片在低温待机。本发明是一种半导体加热装置，包括用于安装和加热工件的加热部件，支撑加热部件的支撑部件和与支撑部件接触的冷却模块。多个加热部和支撑部接合在一起。多个加热部的工件安装面优选构成为同一平面。此外，优选地，分布在支撑部分下方的绝热材料。加热部件优选为陶瓷加热器。

6. 发明授权

US06653604B2 Heater member for mounting heating object and substrate processing apparatus using the same 有权
标题翻译：用于安装加热物体的加热器部件和使用其的基板处理装置
公开(公告)号：US06653604B2
公开(公告)日：2003-11-25
申请号：US10119812
申请日：2002-04-09
申请人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
发明人： Masuhiro Natsuhara , Hirohiko Nakata , Akira Kuibira , Kenji Shinma
IPC分类号： H05B368
CPC分类号： H01L21/67103
摘要： In the heater member for mounting an object of heating, at least a part of a surface other than a surface mounting a substrate such as a semiconductor wafer or a substrate for liquid crystal, is mirror-finished. Accordingly, power fed to the heater for heating to a prescribed temperature can be reduced, and thus, a heater member for mounting an object of heating and a substrate processing apparatus using the heater member, that can heat the object with higher efficiency, can be obtained.
摘要翻译：在用于安装加热对象的加热器构件中，对安装诸如半导体晶片或液晶基板的基板以外的表面的至少一部分进行镜面加工。因此，可以减少供给到加热器的加热到规定温度的电力，因此，可以使用加热器构件加热加热物体的加热器部件和能够以更高的效率加热物体的加热器部件获得。

7. 发明授权

US07306858B2 Aluminum nitride sintered body 失效
标题翻译：氮化铝烧结体
公开(公告)号：US07306858B2
公开(公告)日：2007-12-11
申请号：US11198009
申请日：2005-08-04
申请人： Masuhiro Natsuhara , Kenji Shinma , Hirohiko Nakata
发明人： Masuhiro Natsuhara , Kenji Shinma , Hirohiko Nakata
IPC分类号： B32B9/00
CPC分类号： C04B35/581 , C04B35/62655 , C04B35/645 , C04B2235/3225 , C04B2235/5409 , C04B2235/5445 , C04B2235/608 , C04B2235/6584 , C04B2235/668 , C04B2235/72 , C04B2235/724 , C04B2235/963 , C04B2235/9692 , Y10T428/12736
摘要： In an aluminum nitride sintered body, the bismuth and chlorine contents are restricted to be no more than fixed amounts. More specifically, in an aluminum nitride sintered body having aluminum nitride as its main component, the bismuth content in the aluminum nitride sintered body is no more than 30 ppm and the chlorine content is no more than 100 ppm. It would be preferable to form a resistance heating body on the aluminum nitride sintered body, and it would be preferable for the aluminum nitride sintered body to be used as a semiconductor heating part.
摘要翻译：在氮化铝烧结体中，铋和氯的含量被限定为不大于固定量。更具体地说，在以氮化铝为主要成分的氮化铝烧结体中，氮化铝烧结体中的铋含量为30ppm以下，氯含量为100ppm以下。优选在氮化铝烧结体上形成电阻加热体，优选将氮化铝烧结体用作半导体加热部。

8. 发明申请

US20050178334A1 Susceptor Unit and Apparatus in Which the Susceptor Is Installed 审中-公开
标题翻译：受害者单位和装置，其中安装了受体感染者
公开(公告)号：US20050178334A1
公开(公告)日：2005-08-18
申请号：US10906325
申请日：2005-02-15
申请人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
发明人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
IPC分类号： H05B3/20 , C23C14/50 , C23C16/00 , C23C16/458 , H01L21/02 , H01L21/205 , H01L21/3065 , H01L21/68 , H01L21/683 , H05B3/00 , H05B3/10 , H05B3/74
CPC分类号： C23C16/4585 , C23C14/50 , C23C16/4581
摘要： Affords a susceptor unit in which the temperature uniformity of the susceptor baseplate is enhanced, and devices in which such a susceptor unit is installed. The susceptor unit is made up of a susceptor baseplate for carrying an object to be heated and performing heating operations on the object, and a containment for shielding the susceptor baseplate. In this susceptor unit, the shielding containment shields at least the surface of the susceptor baseplate that forms a lateral side with respect to the baseplate's heated-object-carrying face; and the difference between the maximum and the minimum separations in the encompassing interval between the lateral side of the susceptor baseplate and, facing onto the baseplate lateral side, the inside surface of the shielding containment is not more than 2.2 mm. In implementations including a cooling block, the shielding extends over the lateral side of the cooling block as well.
摘要翻译：提供一种感受器单元，其中感受器基板的温度均匀性得到增强，以及安装这种感受器单元的装置。基座单元由用于承载待加热物体的基座基座和对物体进行加热操作以及用于屏蔽基座基板的容纳物构成。在该感受器单元中，屏蔽容纳物至少屏蔽基座底板的相对于底板加热物体承载面形成侧面的表面; 并且基座基板的侧面与屏障侧面的基板侧面之间的包围间隔中的最大和最小间隔之间的差异不大于2.2mm。在包括冷却块的实施方案中，屏蔽也在冷却块的侧面上延伸。

9. 发明申请

US20080211526A1 Wafer holder, heater unit used for wafer prober and having wafer holder, and wafer prober 审中-公开
标题翻译：晶圆支架，用于晶圆探测器的加热器单元和具有晶片支架的晶片探测器
公开(公告)号：US20080211526A1
公开(公告)日：2008-09-04
申请号：US11492225
申请日：2006-07-25
申请人： Kenji Shinma , Katsuhiro Itakura , Tomoyuki Awazu , Hirohiko Nakata
发明人： Kenji Shinma , Katsuhiro Itakura , Tomoyuki Awazu , Hirohiko Nakata
IPC分类号： G01R31/02 , B23B5/22
CPC分类号： G01R31/2865 , G01R31/2875 , H01L21/67109 , H01L21/68757 , Y10T279/17
摘要： By wafer holder including a chuck top for mounting a wafer and a supporter supporting the chuck top and having flatness of at most 0.1 mm, a heater unit for a wafer prober and the wafer prober using the wafer holder, a wafer holder and a wafer prober apparatus hardly deformable even under high load and capable of effectively preventing contact failure, and capable of preventing temperature increase in a driving system when a semiconductor wafer having semiconductor chips with minute circuitry that requires high accuracy is heated can be provided. In the wafer holder of the present invention, the flatness of the supporter is preferably at most 0.05 mm, and more preferably at most 0.01 mm.
摘要翻译：通过晶片保持器，其包括用于安装晶片的卡盘顶部和支撑卡盘顶部并具有至多0.1mm的平坦度的支撑件，用于晶片探测器的加热器单元和使用晶片保持器的晶片探测器，晶片保持器和晶片探测器可以提供即使在高负载下即使在高负载下也能够变形的装置，并且能够有效地防止接触故障，并且可以提供具有加热需要高精度的具有微小电路的半导体芯片的半导体晶片的驱动系统中的温度升高的装置。在本发明的晶片保持器中，支撑体的平坦度优选为0.05mm以下，更优选为0.01mm以下。

10. 发明申请

US20080083732A1 Wafer holder and exposure apparatus equipped with wafer holder 审中-公开
标题翻译：晶圆座和曝光装置配有晶圆座
公开(公告)号：US20080083732A1
公开(公告)日：2008-04-10
申请号：US11544636
申请日：2006-10-10
申请人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
发明人： Kenji Shinma , Hirohiko Nakata , Masuhiro Natsuhara
IPC分类号： B05C13/00 , C23C16/00
CPC分类号： H01L21/67103 , H01L21/67109
摘要： The present invention is a wafer holder including a heating plate 2 equipped with heating means such as a film-form/foil-form heat generating body 9 or the like, a cooling plate 3 equipped with cooling means such as a coolant passage 7 or the like, and temperature measurement means 4, wherein the heating plate 2 and cooling plate 3 are layered in a direction perpendicular to the wafer placement surface. The heating plate 2 is preferably disposed closer to the wafer placement surface than the cooling plate 3, and a heat conducting member 8 is disposed between the heating plate 2 and cooling plate 3.
摘要翻译：本发明是一种晶片保持器，其包括装有诸如薄膜/箔形发热体9等加热装置的加热板2，具有冷却装置如冷却剂通道7的冷却板3或和温度测量装置4，其中加热板2和冷却板3在垂直于晶片放置表面的方向上层叠。加热板2优选地设置成比冷却板3更靠近晶片放置表面，并且在加热板2和冷却板3之间设置导热部件8。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式