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    • 1. 发明申请
    • Wafer holder, heater unit having the wafer holder, and wafer prober having the heater unit
    • 晶片保持器,具有晶片保持器的加热器单元和具有加热器单元的晶片探测器
    • US20070023320A1
    • 2007-02-01
    • US11492223
    • 2006-07-25
    • Katsuhira ItakuraMasuhiro NatsuharaTomoyuki AwazuHirohiko NakataKenji Shinma
    • Katsuhira ItakuraMasuhiro NatsuharaTomoyuki AwazuHirohiko NakataKenji Shinma
    • B65D85/00
    • H01L21/68757H01L21/67103
    • A wafer holder hardly deformable under high load and capable of effectively preventing a contact failure with a wafer and further capable of preventing temperature increase of a driving system of a wafer prober is provided. In a wafer holder having a chuck top and a supporter, variation in thickness of the chuck top from a wafer-mounting surface to a contact surface with the supporter, and variation in thickness of the supporter from a bottom surface to a contact surface with the chuck top are both set to at most 50 μm. When the supporter is of a structure having a circular tube portion and a base portion separate from each other, variation in thickness of the circular tube portion from a contact surface with the chuck top to a contact surface with the base portion, and variation in thickness of the base portion from a bottom surface to a contact surface with the circular tube portion are preferably both set to at most 25 μm.
    • 晶片保持器在高负载下几乎不变形,并且能够有效地防止与晶片的接触故障,并且还能够防止晶片探测器的驱动系统的温度升高。 在具有卡盘顶部和支撑件的晶片保持器中,卡盘顶部从晶片安装表面到支撑件的接触表面的厚度变化,以及支撑件从底表面到接触表面的厚度的变化 卡盘顶部都设定为最多50马姆。 当支撑体具有圆形管部分和基部彼此分离的结构时,圆形管部分从与卡盘顶部的接触表面到与基部的接触表面的厚度的变化以及厚度的变化 从底面到与圆管部分的接触表面的底部部分优选地设定为至多25μm。