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1. 发明授权

US06716304B2 Wafer holder for semiconductor manufacturing apparatus, and method of manufacturing the wafer holder 失效
标题翻译：用于半导体制造装置的晶片保持器，以及晶片保持器的制造方法
公开(公告)号：US06716304B2
公开(公告)日：2004-04-06
申请号：US10309402
申请日：2002-12-03
申请人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
发明人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
IPC分类号： H05H100
CPC分类号： H01L21/6835 , C04B37/005 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2237/06 , C04B2237/062 , C04B2237/064 , C04B2237/066 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/123 , C04B2237/125 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/567 , C04B2237/62 , C04B2237/66 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/80 , H01L21/4857 , H01L21/67103 , C04B41/0072 , C04B41/4539 , C04B41/4572 , C04B41/5133 , C04B41/5022 , C04B35/581
摘要： A wafer holder for a semiconductor manufacturing apparatus has a high heat conductivity. The wafer holder includes a sintered ceramic piece, a conductive layer such as a heater circuit pattern which can be formed with high precision on at least one surface of the sintered ceramic piece, and a protective layer formed over the conductive layer on the sintered ceramic piece so as to cover a surface of the conductive layer. The protective layer may contain a glass, a non-oxide ceramic such as aluminum nitride or silicon nitride, an oxide of ytterbium, neodymium and calcium, or an oxide of yttrium and aluminum. In a method of manufacturing the wafer holder, a paste containing metal particles is applied on a surface of the sintered ceramic piece and is fired to form a heater circuit pattern as the conductive layer. Then the protective layer is formed on the sintered ceramic piece to cover the surface of the conductive layer.
摘要翻译：用于半导体制造装置的晶片保持器具有高导热性。晶片保持器包括烧结陶瓷片，可以在烧结陶瓷片的至少一个表面上高精度地形成的加热器电路图案的导电层和形成在烧结陶瓷片上的导电层上的保护层以覆盖导电层的表面。保护层可以包含玻璃，诸如氮化铝或氮化硅的非氧化物陶瓷，镱，钕和钙的氧化物，或钇和铝的氧化物。在制造晶片保持器的方法中，将含有金属颗粒的糊剂施加在烧结陶瓷片的表面上，并且被烧制以形成作为导电层的加热器电路图案。然后在烧结陶瓷片上形成保护层以覆盖导电层的表面。

2. 发明授权

US06508884B2 Wafer holder for semiconductor manufacturing apparatus, method of manufacturing wafer holder, and semiconductor manufacturing apparatus 有权
标题翻译：用于半导体制造装置的晶片保持器，晶片保持器的制造方法以及半导体制造装置
公开(公告)号：US06508884B2
公开(公告)日：2003-01-21
申请号：US09741477
申请日：2000-12-19
申请人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
发明人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
IPC分类号： C23C1600
CPC分类号： H01L21/6835 , C04B37/005 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2237/06 , C04B2237/062 , C04B2237/064 , C04B2237/066 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/123 , C04B2237/125 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/567 , C04B2237/62 , C04B2237/66 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/80 , H01L21/4857 , H01L21/67103 , C04B41/0072 , C04B41/4539 , C04B41/4572 , C04B41/5133 , C04B41/5022 , C04B35/581
摘要： A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece, paste containing metal particles is applied and fired to form a heater circuit pattern as a conductive layer. Between the surface of the sintered aluminum nitride piece having the heater circuit pattern formed thereon and another sintered aluminum nitride piece, a glass layer is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces together.
摘要翻译：一种用于半导体制造装置的晶片保持器，其具有高导热性并且包括可以以高精度图案形成的加热器电路图案的导电层，制造晶片保持器的方法，以及其中具有提供晶片保持器。在烧结的氮化铝片的表面上，涂覆含有金属颗粒的糊状物并烧制以形成作为导电层的加热器电路图案。在其上形成有加热器电路图案的烧结氮化铝片的表面和另一个烧结的氮化铝片之间，设置玻璃层作为待烧结的接合层，以将烧结的氮化铝片接合在一起。

3. 发明授权

US06403510B1 Aluminum nitride sintered body and manufacturing method thereof 有权
标题翻译：氮化铝烧结体及其制造方法
公开(公告)号：US06403510B1
公开(公告)日：2002-06-11
申请号：US09641056
申请日：2000-08-17
申请人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Kazutaka Sasaki , Takashi Ishii
发明人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Kazutaka Sasaki , Takashi Ishii
IPC分类号： C04B3500
CPC分类号： C04B35/581 , H05K1/0306
摘要： An aluminum nitride sintered body with high heat conductivity and high strength as well as a method of inexpensively manufacturing such an aluminum nitride sintered body at a low temperature are provided. The aluminum nitride sintered body is manufactured by adding a compound of at least one type of rare earth element (R) selected from La, Ce, Pr, Sm; and Eu, Y compound, Ca compound, and Al compound to an AlN powder and sintering the resulting mixture at a temperature of 1550° C. to 1750° C. The content of oxygen forming Al2O3 existing in an aluminate with rare earth element (R), Y and Ca and oxygen forming independently existing Al2O3 is calculated as 0.01 to 5.0% by weight, heat conductivity is 166 to 200 W/mK, and bending strength is at least 300 MPa.
摘要翻译：提供具有高导热性和高强度的氮化铝烧结体以及低温下廉价制造这种氮化铝烧结体的方法。通过添加选自La，Ce，Pr，Sm中的至少一种稀土元素（R）的化合物来制造氮化铝烧结体; 和Eu，Y化合物，Ca化合物和Al化合物，并在1550℃至1750℃下烧结所得混合物。存在于具有稀土元素的铝酸盐中的形成氧化铝的含量（R ），Y和Ca和独立存在的Al 2 O 3的氧气的比例计算为0.01〜5.0重量％，热传导率为166〜200W / m·K，弯曲强度为300MPa以上。

4. 发明授权

US07015583B2 Submount and semiconductor device 有权
标题翻译：底座和半导体器件
公开(公告)号：US07015583B2
公开(公告)日：2006-03-21
申请号：US10512828
申请日：2003-04-24
申请人： Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
发明人： Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
IPC分类号： H01L23/48 , H01L23/152 , H01L29/40
CPC分类号： H01S5/02236 , H01L23/488 , H01L33/62 , H01L2224/83192 , H01S5/02272 , H01S5/02476
摘要： A submount can mount on it a semiconductor light-emitting device with high bonding strength, and a semiconductor unit incorporates the submount. The submount comprises (a) a submount substrate, (b) a solder layer formed at the top surface of the submount substrate, and (c) a solder intimate-contact layer that is formed between the submount substrate and the solder layer and that has a structure in which a transition element layer consisting mainly of at least one type of transition element and a precious metal layer consisting mainly of at least one type of precious metal are piled up. In the above structure, the transition element layer is formed at the submount-substrate side. The semiconductor unit is provided with a semiconductor light-emitting device mounted on the solder layer of the submount.
摘要翻译：底座可以在其上安装具有高粘结强度的半导体发光器件，并且半导体单元结合了底座。所述基座包括（a）副安装座基板，（b）形成在所述副安装座基板的顶表面处的焊料层，以及（c）形成在所述副安装座基板和所述焊料层之间的焊料紧密接触层，堆积了主要由至少一种类型的过渡元素组成的过渡元素层和主要由至少一种贵金属组成的贵金属层的结构。在上述结构中，过渡元素层形成在基座侧基板侧。半导体单元设置有安装在基座的焊料层上的半导体发光器件。

5. 发明申请

US20050167679A1 Submount and semiconductor device 有权
标题翻译：底座和半导体器件
公开(公告)号：US20050167679A1
公开(公告)日：2005-08-04
申请号：US10512828
申请日：2003-04-24
申请人： Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
发明人： Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
IPC分类号： H01L21/52 , H01L23/488 , H01S5/02 , H01S5/022 , H01S5/024 , H01L27/15
CPC分类号： H01S5/02236 , H01L23/488 , H01L33/62 , H01L2224/83192 , H01S5/02272 , H01S5/02476
摘要： A submount can mount on it a semiconductor light-emitting device with high bonding strength, and a semiconductor unit incorporates the submount. The submount comprises (a) a submount substrate, (b) a solder layer formed at the top surface of the submount substrate, and (c) a solder intimate-contact layer that is formed between the submount substrate and the solder layer and that has a structure in which a transition element layer consisting mainly of at least one type of transition element and a precious metal layer consisting mainly of at least one type of precious metal are piled up. In the above structure, the transition element layer is formed at the submount-substrate side. The semiconductor unit is provided with a semiconductor light-emitting device mounted on the solder layer of the submount.
摘要翻译：底座可以在其上安装具有高粘结强度的半导体发光器件，并且半导体单元结合了底座。所述基座包括（a）副安装座基板，（b）形成在所述副安装座基板的顶表面处的焊料层，以及（c）形成在所述副安装座基板和所述焊料层之间的焊料紧密接触层，堆积了主要由至少一种类型的过渡元素组成的过渡元素层和主要由至少一种贵金属组成的贵金属层的结构。在上述结构中，过渡元素层形成在基座侧基板侧。半导体单元设置有安装在基座的焊料层上的半导体发光器件。

6. 发明授权

US07298049B2 Submount for mounting semiconductor device 有权
标题翻译：用于安装半导体器件的底座
公开(公告)号：US07298049B2
公开(公告)日：2007-11-20
申请号：US10506510
申请日：2003-03-03
申请人： Teruo Amoh , Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
发明人： Teruo Amoh , Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
IPC分类号： H01L23/48
CPC分类号： H01S5/02272 , H01L33/62 , H01L2924/0002 , H01S5/02476 , H01L2924/00
摘要： A submount that enables the reliable mounting of a semiconductor light-emitting device on it, and a semiconductor unit incorporating the submount. A submount 3 comprises (a) a substrate 4; and (b) a solder layer 8 formed on the top surface 4f of the substrate 4. The solder layer 8 before melting has a surface roughness, Ra, of at most 0.18 μm. It is more desirable that the solder layer 8 before melting have a surface roughness, Ra, of at most 0.15 μm, yet more desirably at most 0.10 μm. A semiconductor unit 1 comprises the submount 3 and a laser diode 2 mounted on the solder layer 8 of the submount 3.
摘要翻译：一种能够在其上可靠地安装半导体发光器件的基座，以及并入该基座的半导体单元。基座3包括（a）基板4; 和（b）形成在基板4的顶面4f上的焊料层8。熔融前的焊料层8的表面粗糙度Ra为0.18μm以下。更理想的是，熔融前的焊料层8的表面粗糙度Ra为0.15μm以下，进一步优选为0.10μm以下。半导体单元1包括基座3和安装在基座3的焊料层8上的激光二极管2。

7. 发明授权

US07518155B2 Light emitting element mounting member, and semiconductor device using the same 有权
标题翻译：发光元件安装构件和使用其的半导体装置
公开(公告)号：US07518155B2
公开(公告)日：2009-04-14
申请号：US10546777
申请日：2004-03-15
申请人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
发明人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L33/486 , H01L2224/05568 , H01L2224/05573 , H01L2224/05644 , H01L2224/16225 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01S5/0224 , H01S5/02292 , H01L2924/00014 , H01L2924/00
摘要： The object of the present invention is to provide a light-emitting element mounting member and a semiconductor device using the same that is easy to process and that allows adequate heat dissipation.A light-emitting element mounting member 200 includes: a substrate 2 including an element mounting surface 2a mounting a semiconductor light-emitting element 1 and first and second conductive regions 21, 22 disposed on the element mounting surface 2a and connected to the semiconductor light-emitting element 1; a reflective member 6 including a reflective surface 6a defining an internal space 6b for housing the semiconductor light-emitting element 1 and containing a metal disposed on the element mounting surface 1a; and a metal layer 13 disposed on the reflective surface 6a. The reflective surface 6a is sloped relative to the element mounting surface 2a so that a diameter of the internal space 6b is greater away from the element mounting surface 2a.
摘要翻译：本发明的目的是提供一种发光元件安装构件和使用该发光元件安装构件的半导体装置，其易于处理并且允许充分的散热。发光元件安装构件200包括：基板2，其包括安装半导体发光元件1的元件安装表面2a和设置在元件安装表面2a上并连接到半导体发光元件1的第一和第二导电区域21,22。发光元件1; 反射构件6，其包括限定用于容纳半导体发光元件1并且容纳设置在元件安装表面1a上的金属的内部空间6b的反射表面6a; 以及设置在反射面6a上的金属层13。反射表面6a相对于元件安装表面2a倾斜，使得内部空间6b的直径远离元件安装表面2a。

8. 发明授权

US07420223B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07420223B2
公开(公告)日：2008-09-02
申请号：US11929387
申请日：2007-10-30
申请人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
发明人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/46 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove. The groove is for preventing outward flow of connection member 34 of electrode 32.
摘要翻译：提供了用于充分去除由半导体元件产生的热的半导体器件。半导体器件100配备有具有底面2b和位于底面2b的相反侧的元件安装面2a的基板2和具有主表面1a的半导体元件1，安装在元件安装表面2a上。其中L为主面1的长度方向的长度，H为底面2b与元件安装面2a的距离，H / L的比为0.3以上。当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。金属层13设置在空腔2u的表面上。此外，当在主表面1a上设置连接到外部部分的电极32时，在与电极32连接的部分的空腔侧上，主表面1a设置有凹槽。凹槽用于防止电极32的连接构件34向外流动。

9. 发明申请

US20080067540A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080067540A1
公开(公告)日：2008-03-20
申请号：US11929492
申请日：2007-10-30
申请人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
发明人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/46 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove. The groove is for preventing outward flow of connection member 34 of electrode 32.
摘要翻译：提供了用于充分去除由半导体元件产生的热的半导体器件。半导体器件100配备有具有底面2b和位于底面2b的相反侧的元件安装面2a的基板2和具有主表面1a的半导体元件1，安装在元件安装表面2a上。其中L为主面1的长度方向的长度，H为底面2b与元件安装面2a的距离，H / L的比为0.3以上。当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。金属层13设置在空腔2u的表面上。此外，当在主表面1a上设置连接到外部部分的电极32时，在与电极32连接的部分的空腔侧，主表面1a设置有凹槽。凹槽用于防止电极32的连接构件34向外流动。

10. 发明申请

US20060118808A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060118808A1
公开(公告)日：2006-06-08
申请号：US10539926
申请日：2004-03-08
申请人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
发明人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/46 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1a and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u.
摘要翻译：提供了用于充分去除由半导体元件产生的热的半导体器件。半导体器件100配备有具有底面2b和位于底面2b的相反侧的元件安装面2a的基板2和具有主表面1a的半导体元件1，安装在元件安装表面2a上。在L表示主表面1a的长度方向上的长度a和H是底面2b与元件安装面2a之间的距离时，H / L的比例为0.3以上。当半导体元件是发光元件时，元件安装表面2a是空腔2u，元件1设置在腔体2u中。金属层13设置在空腔2u的表面上。

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