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    • 61. 发明授权
    • Pad conditioning head for CMP process
    • 用于CMP工艺的垫片调节头
    • US07288165B2
    • 2007-10-30
    • US10970365
    • 2004-10-21
    • Alexander S PolyakAvi Tepman
    • Alexander S PolyakAvi Tepman
    • C23F1/00B24B1/00B24B49/00B24B7/00
    • B24B53/017H01L21/31053
    • In a first aspect, a first apparatus is provided for a chemical mechanical polishing (CMP) process. The first apparatus includes (1) a rotatable member; (2) an end effector adapted to receive and retain a conditioning disk; and (3) an elastic device disposed between the rotatable member and the end effector. The elastic device is (a) adapted to rotate the end effector via a torque from the rotatable member, and (b) flexibly extensible so as to impart a force to the end effector while permitting the end effector to deviate from a perpendicular alignment with the rotatable member in order for a conditioning surface of the conditioning disk to conform to an irregular polishing surface of a pad being conditioned. Numerous other aspects are provided, including methods and apparatus for using liquid or gas to deter polishing slurry or debris from entering the conditioning head.
    • 在第一方面,提供了用于化学机械抛光(CMP)工艺的第一设备。 第一装置包括(1)可旋转构件; (2)适于接收和保持调节盘的端部执行器; 和(3)设置在可旋转构件和末端执行器之间的弹性装置。 弹性装置是(a)适于通过来自可旋转构件的扭矩旋转末端执行器,以及(b)柔性可伸展的,以便向末端执行器施加力,同时允许末端执行器偏离与 可旋转构件,以便调节盘的调节表面与被调节的垫的不规则抛光表面相一致。 提供了许多其它方面,包括使用液体或气体来阻止抛光浆料或碎屑进入调节头的方法和装置。
    • 62. 发明授权
    • Substrate centering apparatus and method
    • 基板定心装置及方法
    • US07256132B2
    • 2007-08-14
    • US10631650
    • 2003-07-31
    • Alexander LernerAvi TepmanDonald Olgato
    • Alexander LernerAvi TepmanDonald Olgato
    • H01L21/302H01L21/461
    • H01L21/68
    • A semiconductor substrate centering mechanism includes a plurality of substrate support pins, each pin having a top surface. The top surfaces of the pins define a plane in which the substrate is supported. Each pin has a tab mounted eccentrically at the top surface of the pin. The tabs extend upwardly relative to the top surfaces of the pins. The centering mechanism further includes a pin rotation mechanism adapted to rotate each pin. The pin rotation mechanism rotates the pins between a first position in which the tabs define an envelope that is larger than a circumference of the substrate and a second position in which the tabs define a centered position for the substrate. A telescoping arrangement of nesting shield segments may also be provided for each pin to prevent processing fluid from reaching a shaft of the pin. In one aspect the centering mechanism is coupled to a substrate support of a substrate processing location, and thus allows a substrate to be centered as it is lowered to the processing location.
    • 半导体基板定心机构包括多个基板支撑销,每个销具有顶面。 销的顶表面限定了其中衬底被支撑的平面。 每个销具有偏心地安装在销的顶表面处的突片。 凸片相对于销的顶部表面向上延伸。 定心机构还包括适于旋转每个销的销旋转机构。 销旋转机构使销在第一位置和第二位置之间旋转,在第一位置中,突片限定了大于衬底周长的外壳,其中突片限定了衬底的居中位置。 也可以为每个销提供嵌套屏蔽段的伸缩布置,以防止处理流体到达销的轴。 在一个方面,定心机构耦合到衬底处理位置的衬底支撑件,并且因此允许衬底在被降低到处理位置时居中。
    • 63. 发明申请
    • Apparatus and method for two dimensional magnetron scanning for sputtering onto flat panels
    • 用于溅射到平板上的二维磁控管扫描的装置和方法
    • US20060049040A1
    • 2006-03-09
    • US11211141
    • 2005-08-24
    • Avi Tepman
    • Avi Tepman
    • C23C14/00
    • H01J37/3408
    • A rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron includes a closed plasma loop formed in a convolute shape, for example, a rectangularized helix with an inner pole of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole having the opposed polarity. External actuators move the magnetron slidably suspended from a gantry which sliding perpendicularly on the chamber walls.
    • 放置在矩形靶的背面的矩形磁控管,以在用于将靶材溅射到矩形板上的溅射反应器中加强等离子体。 磁控管的尺寸仅略低于目标的尺寸,并且在靶的两个垂直方向上扫描,扫描长度例如对于2m靶的扫描长度为约100mm。 扫描可以沿着平行于目标侧的两个链接和两个连接对角线沿着双Z图案。 磁控管包括形成为卷积形状的闭合等离子体环,例如,具有沿着单个路径延伸的几乎恒定宽度的内极的矩形螺旋,并且具有由具有相反极性的外极完全包围的一个磁极。 外部执行器将磁控管可移动地悬挂在垂直于室壁上滑动的龙门架上。
    • 64. 发明申请
    • Target tiles in a staggered array
    • 目标瓦片在交错阵列中
    • US20060006064A1
    • 2006-01-12
    • US11158270
    • 2005-06-21
    • Avi Tepman
    • Avi Tepman
    • C23C14/00
    • H01J37/3423C23C14/3407
    • A sputtering target, particularly for sputter depositing a target material onto large rectangular panels, in which a plurality of target tiles are bonded to a backing plate in a two-dimensional non-rectangular array such that the tiles meet at interstices of no more than three tile, thus locking the tiles against excessive misalignment during bonding and repeated thermal cycling. The rectangular tiles may be arranged in staggered rows or in a herringbone or zig-zag pattern. Hexagonal and triangular tiles also provide many of the advantages of the invention. Sector-shaped tiles may be arranged in a circular target with a staggered offset at the center.
    • 一种溅射靶,特别是用于将目标材料溅射沉积到大矩形板上,其中多个目标瓦片以二维非矩形阵列结合到背板上,使得瓦片在不超过三个的间隙处相遇 从而在接合和重复热循环过程中将瓷砖锁定在过大的未对准位置。 矩形瓦片可以以交错的行或人字形或锯齿形图案布置。 六角形和三角形瓦片也提供了本发明的许多优点。 扇形瓦片可以布置在圆形目标中,在中心具有错开的偏移。
    • 66. 发明申请
    • Two dimensional magnetron scanning for flat panel sputtering
    • 二维磁控管扫描用于平板溅射
    • US20050145478A1
    • 2005-07-07
    • US10863152
    • 2004-06-07
    • Avi Tepman
    • Avi Tepman
    • C23C14/35H01J37/34
    • C23C14/35H01J37/3408
    • A generally rectangular magnetron placed at the back of a rectangular target to intensify the plasma in a sputter reactor configured for sputtering target material onto a rectangular panel. The magnetron has a size only somewhat less than that of the target and is scanned in the two perpendicular directions of the target with a scan length of, for example, about 100 mm for a 2 m target. The scan may follow a double-Z pattern along two links parallel to a target side and the two connecting diagonals. The magnetron includes a closed plasma loop formed in a convolute shape, for example, serpentine or rectangularized helix with an inner pole of nearly constant width extending along a single path and having one magnetic polarity completely surrounded by an outer pole having the opposed polarity.
    • 放置在矩形靶的背面的大致矩形的磁控管,以在用于将靶材溅射到矩形面板上的溅射反应器中加强等离子体。 磁控管的尺寸仅略低于目标的尺寸,并且在靶的两个垂直方向上扫描,扫描长度例如对于2m靶的扫描长度为约100mm。 扫描可以沿着平行于目标侧的两个链接和两个连接对角线沿着双Z图案。 磁控管包括形成为卷积形状的闭合等离子体环,例如蛇形或矩形螺旋,具有几乎恒定宽度的内极,沿着单个路径延伸,并具有完全被具有相反极性的外极包围的一个磁极。
    • 67. 发明授权
    • Clamshell and small volume chamber with fixed substrate support
    • 蛤壳式和小容积室具有固定衬底支撑
    • US06866746B2
    • 2005-03-15
    • US10302774
    • 2002-11-21
    • Lawrence C. LeiAlfred W. MakGwo-Chuan TzuAvi TepmanMing XiWalter Benjamin Glenn
    • Lawrence C. LeiAlfred W. MakGwo-Chuan TzuAvi TepmanMing XiWalter Benjamin Glenn
    • C23C16/44C23C16/455H01L21/00C23C16/00C23F1/00H01L21/306
    • C23C16/45565C23C16/4412C23C16/45521C23C16/45574H01L21/6719
    • Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly. The first assembly and the second assembly can be selectively positioned between an open position and a closed position.
    • 本发明的实施例一般涉及具有固定衬底支撑件的蛤壳式和小容积室。 处理室的一个实施例包括具有基板接收表面的固定基板支撑件,围绕基板接收表面的周边设置的泵送环和设置在固定基板支撑件上方的气体分配组件。 泵送环形成泵送通道的至少一部分并且具有通过其形成的一个或多个孔。 腔室还可以包括设置在泵送环的孔的径向内侧的气流扩散器。 处理室的另一实施例包括包括固定衬底支撑件的第一组件和包括气体分配组件的第二组件。 第一组件包括第一组件主体,其形状和尺寸使得第一组件主体的至少一部分在衬底支撑件的衬底接收表面下方。 铰链组件联接第一组件和第二组件。 第一组件和第二组件可以选择性地定位在打开位置和关闭位置之间。
    • 68. 发明授权
    • Apparatus for wafer rinse and clean and edge etching
    • 晶圆清洗和边缘蚀刻装置
    • US06689418B2
    • 2004-02-10
    • US09922130
    • 2001-08-03
    • Donald J. K. OlgadoAvi TepmanYeuk-Fai Edwin MokArnold V. Kholodenko
    • Donald J. K. OlgadoAvi TepmanYeuk-Fai Edwin MokArnold V. Kholodenko
    • B05D312
    • H01L21/68728B08B3/048C11D7/08C11D7/265C11D11/0047H01L21/67057
    • An apparatus for and method of rinsing one side of a two-sided substrate and removing unwanted material from the substrate's edge and/or backside. One embodiment of the method is directed toward rinsing and cleaning a substrate having a front side upon which integrated circuits are to be formed and a backside. This embodiment includes dropping the substrate front side down onto a pool of rinsing liquid in a manner such that the front side of the substrate is in contact with the solution while the substrate is held in suspension by the surface tension of the solution liquid thereby preventing the backside of the substrate from sinking under an upper surface of the pool. Next, while the substrate is in suspension in said rinsing liquid, the substrate is secured by its edge with a first set of fingers and in some embodiments the substrate is subsequently spun. In another embodiment, a method of forming a copper layer on a front side of a substrate is disclosed. The method includes plating the copper layer over the front side of the substrate in a plating device and then transferring the substrate from the plating device to rinsing and cleaning station. At the rinsing and cleaning station, the substrate is dropped front side down onto a pool of rinsing liquid so that the surface tension of the liquid holds the substrate in suspension thereby preventing the backside of said substrate from sinking under an upper surface of the pool and then, while the substrate is suspended in the pool, it is secured with a first set of fingers.
    • 一种用于冲洗双面基板的一侧并从基板的边缘和/或背面去除不想要的材料的装置和方法。 该方法的一个实施例涉及冲洗和清洁具有正面的衬底,集成电路将在其上形成背面。 该实施例包括将衬底正面朝下放置到冲洗液池上,使得衬底的前侧与溶液接触,同时衬底被溶液的表面张力保持悬浮,从而防止了 衬底的背面从池的上表面下沉。 接下来,当衬底在所述漂洗液体中悬浮时,衬底通过其边缘用第一组手指固定,并且在一些实施例中,衬底随后被旋转。 在另一实施例中,公开了一种在衬底前侧形成铜层的方法。 该方法包括在电镀装置中在基板的正面上电镀铜层,然后将基板从电镀装置转移到冲洗和清洗台。 在冲洗和清洁站处,基板被正面向下落到冲洗液池上,使得液体的表面张力将基板保持在悬浮状态,从而防止所述基板的背面沉入池的上表面,并且 然后,当衬底悬挂在池中时,其用第一组手指固定。
    • 69. 发明授权
    • Method and apparatus for accurate placement of semiconductor wafers onto respective platforms within a single reaction chamber
    • 将半导体晶片精确放置在单个反应室内的相应平台上的方法和装置
    • US06430468B1
    • 2002-08-06
    • US09716039
    • 2000-11-17
    • Avi TepmanLawrence Chung-Lai Lei
    • Avi TepmanLawrence Chung-Lai Lei
    • G06F700
    • H01L21/67748H01L21/67751Y10S414/136
    • Method and apparatus are provided for accurately placing first and second semiconductor wafers onto a first and a second platforms, respectively, in a single processing chamber despite changes in the exact positions of the platforms caused by variations in temperature within the chamber. A computer controls a mechanism having a pair of wafer-supporting blades to insert the wafers into the chamber. The computer determines from position sensors when the first wafer is centered over the first platform, then actuates lift pins associated with the first platform to lift the first wafer off of its respective blade. Then the computer in the same way in response to other position sensors moves the second wafer into alignment with the second platform, and raises by lift pins the second wafer off of its respective blade. Thereafter the computer removes the blades from the chamber, and lowers the wafers in precise positions onto their respective platforms.
    • 提供了方法和装置,用于在第一和第二平台分别在单个处理室中精确地放置第一和第二半导体晶片,尽管由室内的温度变化导致的平台的精确位置的变化。 计算机控制具有一对晶片支撑刀片以将晶片插入腔室的机构。 当第一晶片在第一平台上居中时,计算机从位置传感器确定,然后致动与第一平台相关联的提升销,以将第一晶片从其相应的叶片提升。 然后以相同方式响应于其它位置传感器的计算机将第二晶片移动到与第二平台对准,并且通过提升销使第二晶片从其相应的刀片升高。 此后,计算机从腔室中移除刀片,并将晶片在精确位置下降到各自的平台上。