专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

US20090267267A1 IMPRINT METHOD 有权
标题翻译： IMPRINT方法
公开(公告)号：US20090267267A1
公开(公告)日：2009-10-29
申请号：US12426527
申请日：2009-04-20
申请人： Ikuo Yoneda , Tetsuro Nakasugi , Shinji Mikami
发明人： Ikuo Yoneda , Tetsuro Nakasugi , Shinji Mikami
IPC分类号： B29C59/00
CPC分类号： B29C37/006 , B29C35/0888 , B29C37/0053 , B29C2035/0827 , B29C2059/023 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： An imprint method includes contacting a template on a substrate, the template including a pattern to be transferred on the substrate, separating the template from the substrate, and removing particle adhered on the template before contacting the template on the substrate, the removing the particle including pressing the template on an adhesive member and separating the pressed template from the adhesive member, wherein adhesiveness of the adhesive member to the template is higher than adhesiveness of the adhesive member to the substrate.
摘要翻译：压印方法包括使基板上的模板接触，所述模板包括要在基板上转印的图案，将模板与基板分离，以及在与基板之间的模板接触之前除去附着在模板上的颗粒，除去包括将模板压在粘合剂构件上并将压制模板与粘合构件分离，其中粘合剂与模板的粘合性高于粘合剂与基材的粘合性。

62. 发明申请

US20090095711A1 MICROFABRICATION APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：微生物装置和装置制造方法
公开(公告)号：US20090095711A1
公开(公告)日：2009-04-16
申请号：US12237806
申请日：2008-09-25
申请人： Takeshi Koshiba , Yumi Nakajima , Tetsuro Nakasugi , Kazuo Tawarayama , Ikuo Yoneda , Hiroyuki Mizuno
发明人： Takeshi Koshiba , Yumi Nakajima , Tetsuro Nakasugi , Kazuo Tawarayama , Ikuo Yoneda , Hiroyuki Mizuno
IPC分类号： B44C1/22 , B29C43/02
CPC分类号： B29C43/021 , B29C33/303 , B29C43/003 , B29C43/58 , B29C2043/025 , B29C2043/142 , B29C2043/525 , B29C2043/5833 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F9/7003 , G03F9/7042 , G03F9/7088
摘要： A microfabrication apparatus for pressing an original plate including a pattern down on a substrate to transfer the pattern on the substrate includes a first measurement unit for measuring relative positional displacement between the substrate and the plate above the substrate, a position correction unit for correcting relative position between the substrate and the plate such that the pattern is to be transferred on a first predetermined position of the substrate based on the relative positional displacement measured by the first measurement unit, a pressing unit for pressing the plate above the substrate down on the substrate to transfer the pattern on the substrate in a state that the relative positional displacement between the substrate and the plate is corrected by the position correction unit, and a second measurement unit for measuring relative positional relationship between the pattern transferred on the substrate and a pattern previously formed on the substrate.
摘要翻译：一种用于将包括图案的原稿板压在基板上以将图案转印到基板上的微加工装置包括：第一测量单元，用于测量基板和基板上方的板之间的相对位置偏移;位置校正单元，用于校正相对位置在基板和板之间，基于由第一测量单元测量的相对位置位移，将图案转印到基板的第一预定位置上;按压单元，用于将基板上方的基板向下压在基板上，在通过位置校正单元校正基板和板之间的相对位置偏移的状态下，在基板上转印图案;以及第二测量单元，用于测量在基板上传送的图案与先前形成的图案之间的相对位置关系在基板上。

63. 发明授权

US07482604B2 Electron beam lithography apparatus, lithography method, lithography program, and manufacturing method of a semiconductor device 失效
标题翻译：电子束光刻设备，光刻方法，光刻程序和半导体器件的制造方法
公开(公告)号：US07482604B2
公开(公告)日：2009-01-27
申请号：US11430044
申请日：2006-05-09
申请人： Tetsuro Nakasugi , Noriaki Sasaki , Takeshi Koshiba , Takumi Ota
发明人： Tetsuro Nakasugi , Noriaki Sasaki , Takeshi Koshiba , Takumi Ota
IPC分类号： G21G5/00
CPC分类号： H01J37/3026 , H01J2237/31761
摘要： According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.
摘要翻译：根据本发明的一个方面，提供了一种电子束光刻设备，包括：第一设定单元，被配置为基于半导体衬底的布局信息来设置半导体衬底上的绘制位置;第二设置单元，被配置为设置有效范围基于所述半导体衬底的形状信息在所述半导体衬底上，确定单元，被配置为确定所述绘制位置是否在所述有效范围内;以及照射单元，被配置为当所述确定单元确定时照射所述半导体衬底电子束绘图位置在有效范围内。

64. 发明申请

US20080001077A1 Charged particle beam drawing apparatus, charged particle beam drawing method and semiconductor device manufacturing method 审中-公开
标题翻译：带电粒子束拉制装置，带电粒子束拉制法和半导体器件制造方法
公开(公告)号：US20080001077A1
公开(公告)日：2008-01-03
申请号：US11808070
申请日：2007-06-06
申请人： Tetsuro Nakasugi , Takeshi Koshiba
发明人： Tetsuro Nakasugi , Takeshi Koshiba
IPC分类号： G01D18/00 , G03C5/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A charged particle beam drawing apparatus is disclosed, which includes a drawing section which draws a pattern on a resist film applied to a substrate to be processed on which a under-layer mark is formed, by a charged particle beam, a position computing section which computes a position of the under-layer mark and a position of a displacement measuring pattern drawn by the drawing section on the resist film using a correction coefficient, by scanning the under-layer mark and the displacement measuring pattern by a charged particle beam, a displacement amount computing section which computes an amount of displacement from the positions of the under-layer mark and the displacement measuring pattern, and a correcting section which corrects the correction coefficient according to the amount of displacement.
摘要翻译：公开了一种带电粒子束描绘装置，其包括：绘制部分，其通过带电粒子束在施加到其上形成底层标记的待处理基板上的抗蚀剂膜上绘制图案;位置计算部分，使用校正系数，通过用带电粒子束扫描下层标记和位移测量图案，计算下层标记的位置和由图形部分在抗蚀剂膜上绘制的位移测量图案的位置，位移量计算部，其从所述下层标记和所述位移测量图案的位置计算位移量;以及校正部，其根据所述位移量来校正所述校正系数。

65. 发明申请

US20070263921A1 Character pattern extracting method, charged particle beam drawing method, and character pattern extracting program 失效
标题翻译：字符图案提取方法，带电粒子束绘制方法和字符图案提取程序
公开(公告)号：US20070263921A1
公开(公告)日：2007-11-15
申请号：US11797531
申请日：2007-05-04
申请人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
发明人： Tetsuro Nakasugi , Takumi Ota , Takeshi Koshiba , Noriaki Sasaki
IPC分类号： G06K9/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.
摘要翻译：字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案，提取数量小于最大值的第一提取图案以大量的读取字符图案的数量以参考时间数字的降序排列，将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案，从候选图案中选择多个候选图案，数字对应于从最大数量提取的图案的数量之间的差异，以及创建所选择的候选图案的组合，以及提取包括在候选图案的组合中的组合中的第二提取图案，其中半导体器件的制造时间最缩短。

66. 发明授权

US07242014B2 Charged particle beam drawing equipment, method of adjusting aperture mask, and method of manufacturing semiconductor device 失效
标题翻译：带电粒子束拉制设备，调整孔径掩模的方法和制造半导体器件的方法
公开(公告)号：US07242014B2
公开(公告)日：2007-07-10
申请号：US11172996
申请日：2005-07-05
申请人： Takumi Ota , Tetsuro Nakasugi
发明人： Takumi Ota , Tetsuro Nakasugi
IPC分类号： H01J37/30 , H01J37/256
CPC分类号： H01J37/3045 , B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A charged particle beam drawing equipment includes charged particle beam source, first and second shaping aperture masks with first and second opening portions for rotation adjustment, detection section to detect charged particle beam intensity distribution in a plane parallel to the second mask, the beam being emitted from the source and passing through the opening portions, rotation angle control section to control relative rotation angle between the masks, acquisition section to acquire relative rotation angle between the masks such that deviation in relative rotation angle between the masks falls within a predetermined range based on detection results obtained by changing the relative rotation angle between the masks plural times by the control section and by detecting the beam by the detection section for each rotation angle, and instruction section to instruct the rotation angle control section such that the relative rotation angle between the masks be the acquired rotation angle.
摘要翻译：带电粒子束拉制设备包括带电粒子束源，具有用于旋转调节的第一和第二开口部分的第一和第二成形孔径掩模，用于检测平行于第二掩模的平面中的带电粒子束强度分布的检测部分，从源极通过开口部分，旋转角度控制部分，以控制掩模之间的相对旋转角度，获取部分，以获得掩模之间的相对旋转角度，使得掩模之间的相对旋转角度的偏差落在预定范围内，基于通过控制部分多次改变掩模之间的相对旋转角度并且通过每个旋转角度由检测部分检测光束而获得的检测结果，以及指令部分，其指示旋转角度控制部分，使得旋转角度控制部分之间的相对旋转角度掩模是获得的旋转角度。

67. 发明申请

US20060076508A1 System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device 有权
标题翻译：用于校正用于光刻和观察的带电粒子束的控制条件的系统，方法和程序，以及用于制造半导体器件的程序和方法
公开(公告)号：US20060076508A1
公开(公告)日：2006-04-13
申请号：US11239428
申请日：2005-09-30
申请人： Tetsuro Nakasugi , Takumi Ota
发明人： Tetsuro Nakasugi , Takumi Ota
IPC分类号： G01N23/00
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31793
摘要： A system for correcting a charged particle beam lithography condition including: an error calculation unit configured to calculate an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters; a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum; and a main correction unit configured to calculate main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.
摘要翻译：一种用于校正带电粒子束光刻条件的系统，包括：误差计算单元，被配置为计算带电粒子束的照明位置的误差，带电粒子束由通过初始校正参数校正的光刻条件控制; 临时校正单元，被配置为计算临时校正参数以将所述误差减小到最小; 以及主校正单元，被配置为通过使用临时校正参数和初始校正参数执行统计处理来计算校正光刻条件的主要校正参数。

68. 发明授权

US06941008B2 Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US06941008B2
公开(公告)日：2005-09-06
申请号：US10407126
申请日：2003-04-07
申请人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
发明人： Atsushi Ando , Kazuyoshi Sugihara , Katsuya Okumura , Tetsuro Nakasugi
IPC分类号： G03F7/20 , H01J37/304 , H01J37/317 , H01L21/027 , G06K9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/7045 , G03F7/70675 , H01J37/3045 , H01J37/3174 , Y10S430/143
摘要： To achieve down-sizing and improvements of throughputs, light exposure and charge beam exposure are sometimes used together. In case of performing exposure of a desired pattern in a plurality of stages, a positional displacement of each of exposure patterns in the stages leads to a decrease in exposure accuracy. According to the present invention, in case of forming a fine pattern by exposure after exposure of a rough pattern, the exposure position of the rough pattern is adjusted, based on a latent image of the rough pattern which has been subjected to exposure. As a result, a positional-displacement between rough and fine patterns is reduced so that a desired pattern can be formed with high accuracy.
摘要翻译：为了实现规模缩小和吞吐量的提高，有时一起使用曝光和电荷束曝光。在多级中进行期望图案的曝光的情况下，各级的曝光图案的位置偏移导致曝光精度降低。根据本发明，在粗糙图案曝光后通过曝光形成精细图案的情况下，基于经受曝光的粗糙图案的潜像，调整粗糙图案的曝光位置。结果，粗略和精细图案之间的位置偏移减小，从而可以高精度地形成期望的图案。

69. 发明授权

US06897454B2 Energy beam exposure method and exposure apparatus 失效
标题翻译：能量束曝光方法和曝光装置
公开(公告)号：US06897454B2
公开(公告)日：2005-05-24
申请号：US10443856
申请日：2003-05-23
申请人： Noriaki Sasaki , Tetsuro Nakasugi
发明人： Noriaki Sasaki , Tetsuro Nakasugi
IPC分类号： G03F1/20 , G03F1/68 , G03F7/20 , H01J37/317 , H01L21/027 , A61N5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70441 , G03F7/70475 , H01J37/3174 , H01J2237/31761 , H01J2237/31776
摘要： An exposure method using an energy beam exposure apparatus capable of controlling magnitude relation between blurs of energy beam in first and second directions for exposing a pattern on a sample in the apparatus in a state in which the blur of energy beam in one direction of the first and second directions is set smaller than the blur of energy beam in the other direction comprises adjusting the magnitude relation of the blurs of energy beam in the first and second directions, adjusting the direction of the sample in the apparatus on the basis of the pattern and the magnitude relation of the blurs of energy beam in the first and second directions, and projecting the pattern onto the sample by exposing the sample to the energy beam and using shape correction of the pattern needed to compensate blurs of energy beam in the first and second directions.
摘要翻译：一种使用能量束曝光装置的曝光方法，能量束曝光装置能够控制能量束在第一和第二方向上的模糊之间的大小关系，用于在第一和第二方向上的能量束的一个方向上的能量束的模糊的状态下暴露在装置中的样品上的图案并且将第二方向设定为小于在另一方向上的能量束的模糊包括调整能量束在第一和第二方向上的模糊的大小关系，基于图案调整装置中的样本的方向，以及能量束在第一和第二方向上的模糊的大小关系，以及通过将样本暴露于能量束并且使用形状校正来补偿第一和第二方向上的能量束的模糊所需的图案，将图案投影到样本上方向。

70. 发明申请

US20050048413A1 Pattern forming method, semiconductor device and method for manufacturing the same 审中-公开
标题翻译：图案形成方法，半导体装置及其制造方法
公开(公告)号：US20050048413A1
公开(公告)日：2005-03-03
申请号：US10893947
申请日：2004-07-20
申请人： Tetsuro Nakasugi
发明人： Tetsuro Nakasugi
IPC分类号： H01L21/027 , G03F7/00 , G03F7/09 , G03F7/11 , H01L21/3213
CPC分类号： H01L21/32139 , G03F7/093 , G03F7/11 , H01L21/0275
摘要： There is disclosed a pattern forming method comprising providing a first film having conductivity above a substrate to be processed, providing a second film having an acid diffusion preventing function above the first film, providing a third film having photosensitivity on the second film, and exposing a predetermined pattern on the third film by applying an energy beam onto the third film.
摘要翻译：公开了一种图案形成方法，包括提供在待加工基材上方具有导电性的第一膜，在第一膜上方提供具有酸扩散防止功能的第二膜，在第二膜上提供具有光敏性的第三膜，通过将能量束施加到第三膜上而在第三膜上的预定图案。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式