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    • 62. 发明授权
    • Apparatus and method for analyzing and modifying a specimen surface
    • 用于分析和修改试样表面的装置和方法
    • US08769709B2
    • 2014-07-01
    • US13954617
    • 2013-07-30
    • Carl Zeiss SMS GmbH
    • Christof BaurKlaus EdingerThorsten HofmannGabriel Baralia
    • G01Q10/00
    • G01Q10/00G01Q70/06G01Q80/00G03F1/72G03F1/82
    • The invention refers to a probe assembly for a scanning probe microscope which comprises at least one first probe-adapted for analyzing a specimen, at least one second probe adapted for modifying the specimen and at least one motion element associated with the probe assembly and adapted for scanning one of the probes being in a working position across a surface of the specimen so that the at least one first probe interacts with the specimen whereas the at least one second probe is in a neutral position in which it does not interact with the specimen and to bring the at least one second probe into a position so that the at least one second probe can modify a region of the specimen analyzed with the at least one first probe.
    • 本发明涉及一种用于扫描探针显微镜的探针组件,其包括至少一个适用于分析样本的第一探针,至少一个适于修改样本的第二探针和与该探针组件相关联的至少一个运动元件, 扫描探针中的一个位于穿过试样的表面的工作位置,使得至少一个第一探针与试样相互作用,而至少一个第二探针处于其不与试样相互作用的中性位置, 以使至少一个第二探针进入位置,使得至少一个第二探针可以修改用至少一个第一探针分析的样本的区域。
    • 64. 发明申请
    • MICROSCOPE AND METHOD FOR CHARACTERIZING STRUCTURES ON AN OBJECT
    • 用于表征对象结构的微观方法和方法
    • US20130321609A1
    • 2013-12-05
    • US13908192
    • 2013-06-03
    • Carl Zeiss AGCarl Zeiss SMS GmbH
    • Holger SeitzThomas FrankThomas TrautzschNorbert Kerwien
    • G02B21/00G02B21/36
    • G02B21/0016G02B21/06G02B21/361G02B21/364G02B21/365
    • A microscope includes an illumination unit for illuminating a mask at a predetermined non-axial illumination angle, an imaging unit for imaging an aerial image of the mask within a predetermined defocus region, and an imaging field stop, in which as a result of the lateral displacement of the aerial image depending on the position within the defocus region and on the non-axial illumination angle, the opening of the imaging field stop is dimensioned such that the aerial image is either completely encompassed or circumferentially cut within the defocus region.A method for characterizing a mask having a structure includes illuminating the mask at at least one illumination angle using monochromatic illumination radiation such that a diffraction image of the structure is created, recording the diffraction image, establishing the intensities of the maxima of the adjacent orders of diffraction, and establishing an intensity ratio of the intensities.
    • 显微镜包括用于以预定的非轴向照明角度照射掩模的照明单元,用于在预定的散焦区域内对掩模的空间图像进行成像的成像单元和成像场停止,其中作为横向 取决于散焦区域内的位置和非轴向照射角度的空间图像的位移,成像场停止件的开口的尺寸被设计成使得空间图像在散焦区域内完全包围或周向切割。 用于表征具有结构的掩模的方法包括:使用单色照射辐射以至少一个照明角度照射掩模,使得产生该结构的衍射图像,记录衍射图像,建立相邻阶数的最大值的强度 衍射,并建立强度的强度比。
    • 68. 发明申请
    • DETERMINATION OF THE RELATIVE POSITION OF TWO STRUCTURES
    • 确定两个结构的相对位置
    • WO2011012265A1
    • 2011-02-03
    • PCT/EP2010/004517
    • 2010-07-23
    • CARL ZEISS SMS GMBHARNZ, MichaelSEIDEL, Dirk
    • ARNZ, MichaelSEIDEL, Dirk
    • G03F7/20G03F1/00
    • G03F7/70633G03F7/70625
    • A method is provided for determining the position of a first structure (8a) relative to a second structure (8b) or a part thereof, said method having the steps of: a) providing a first picture (Fl) having a multiplicity of pixels and which contains the first structure, b) providing a second picture (F2) having a multiplicity of pixels and which contains the second structure, c) forming an optimization function with the displacement of the two pictures relative to one another as parameter, the optimization function overlying the two pictures and masking the overlay such that in a determination of an extreme value of the optimization function a contribution is made only by the region of the overlay that corresponds to the second structure or the part thereof, d) ascertaining the extreme value of the optimization function and determining the optimal value of the displacement based on the extreme value of the optimization function, and e) determining the position of the first structure relative to the second structure or a part thereof with the optimal displacement value ascertained in step d).
    • 提供一种用于确定第一结构(8a)相对于第二结构(8b)或其一部分的位置的方法,所述方法具有以下步骤:a)提供具有多个像素的第一图像(F1)和 其包含第一结构,b)提供具有多个像素并且包含第二结构的第二图像(F2),c)形成具有两个图像相对于彼此的位移的优化函数作为参数,优化函数 覆盖两个图片并掩盖覆盖层,使得在确定优化函数的极值时,仅通过对应于第二结构或其部分的覆盖区域进行贡献,d)确定最优值 优化函数,并根据优化函数的极值确定位移的最优值,以及e)确定第一结构关系的位置 具有在步骤d)中确定的最佳位移值的第二结构或其一部分。
    • 70. 发明申请
    • METHOD FOR ANALYZING MASKS FOR PHOTOLITHOGRAPHY
    • 用于分析胶片的方法
    • WO2009127368A1
    • 2009-10-22
    • PCT/EP2009/002668
    • 2009-04-09
    • CARL ZEISS SMS GMBHSTROESSNER, UlrichSCHERUEBL, Thomas
    • STROESSNER, UlrichSCHERUEBL, Thomas
    • G03F7/20
    • G03F7/70666G03F7/705G03F7/70608
    • The invention relates to a method for analyzing masks for photolithography. In this method, an aerial image of the mask for a first focus setting is generated and stored in an aerial image data record. The aerial image data record is transferred to an algorithm that simulates a photolithographic wafer exposure on the basis of this data record. In this case, the simulation is carried out for a plurality of mutually different energy doses. Then, at a predetermined height from the wafer surface, contours which separate regions with photoresist from those regions without photoresist are in each case determined. The result, that is to say the contours, are stored for each of the energy doses in each case in a contour data record with the energy dose as a parameter. Finally, the contour data records are combined to form a three-dimensional multicontour data record with the reciprocal of the energy dose as a third dimension, and, on the basis of the transitions from zero to values different than zero in the contours, a three-dimensional profile of the reciprocal of the energy dose depending on the position on the mask is generated. This profile, the so-called effective aerial image, is output or stored or automatically evaluated. The same can also occur with sections through said profile.
    • 本发明涉及一种用于分析光刻掩模的方法。 在该方法中,生成用于第一焦点设置的掩模的空间图像并将其存储在空中图像数据记录中。 将空间图像数据记录转移到基于该数据记录模拟光刻晶片曝光的算法。 在这种情况下,对多个相互不同的能量剂量进行模拟。 然后,在距离晶片表面的预定高度处,分别确定了与光致抗蚀剂区域分开的区域。 在能量剂量作为参数的轮廓数据记录中,在每种情况下,为每个能量剂量存储结果,也就是说轮廓。 最后,轮廓数据记录被组合以形成具有作为第三维度的能量剂量的倒数的三维多轨道数据记录,并且基于在轮廓中从零到不同于零的值的过渡,三 产生根据掩模上的位置的能量剂量的倒数的三维轮廓。 该配置文件,即所谓的有效航空图像,被输出或存储或自动评估。 通过所述剖面也可能发生同样的情况。