专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明申请

WO2012022329A3 METHOD FOR LOCALLY REMOVING A SURFACE LAYER, AND SOLAR CELL 审中-公开
标题翻译：方法表层及太阳能电池的局部切除
公开(公告)号：WO2012022329A3
公开(公告)日：2012-04-19
申请号：PCT/DE2011075152
申请日：2011-06-28
申请人： CENTROTHERM PHOTOVOLTAICS AG , KUEHN TINO , TEPPE ANDREAS , FRIESS TOBIAS , ESTURO-BRETON AINHOA , KELLER STEFFEN
发明人： KUEHN TINO , TEPPE ANDREAS , FRIESS TOBIAS , ESTURO-BRETON AINHOA , KELLER STEFFEN
IPC分类号： H01L31/0224 , H01L31/0236 , H01L31/18
CPC分类号： H01L29/34 , H01L21/268 , H01L31/02363 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The invention relates to a method for locally removing a surface layer (36) which is applied to a texture (30) of a textured substrate, wherein the texture (30) has a multiplicity of structure elements (32) with structure tips (34) and/or structure edges, having the steps of locally irradiating the texture (30) through the surface layer (36) by means of laser radiation which at least partially penetrates through the surface layer (36) and which is at least partially absorbed by the texture (30), the intensity of which laser radiation is set such that the texture (30) is locally melted by means of the laser radiation and subsequently recrystallized (16), wherein the surface layer (36) is locally opened in the region of the structure tips (34) and/or of the structure edges such that the openings around the structure tips (34) and/or the structure edges after the local irradiation of the texture (30) are completely surrounded by continuous, non-open regions of the surface layer (36), and removing (18) the recrystallized regions (38) of the texture (30) in an etching step by means of an etching medium, wherein the surface layer (36) outside the recrystallized regions (38) is used as an etching mask against the etching medium, and to a solar cell (70).
摘要翻译：一种用于局部去除的表面层（36），其被施加到织构的衬底的织构（30）的过程中，织构（30）包括多个结构元件（32），其具有结构顶部（34）和/或具有结构的边缘，其包括以下步骤通过表面层的装置中的纹理（30）通过该表面层（36）的局部照射（36）至少部分地穿透和从纹理（30）至少部分地吸收激光辐射，其强度被设定为使得所述纹理（30）借助于激光辐射局部熔化和下面（16）中重结晶，其特征在于，使得根据纹理（30）的局部照射到尖端的结构中的开口在结构尖端的区域中的表面层（36）（34）和/或结构边缘局部地打开的（34）和/或围绕的表面层的连续的开放区域边缘结构（36）v 其中，从所述再结晶区域的表面层（36）远（38）用作抗蚀刻介质的蚀刻掩模通过蚀刻介质的装置在蚀刻步骤中的纹理（30）的再结晶区域（38）的包围ollständig，并除去（18），和太阳能电池（70）。

62. 发明申请

WO2012025819A1 CONTINUOUS FURNACE 审中-公开
标题翻译：连续炉
公开(公告)号：WO2012025819A1
公开(公告)日：2012-03-01
申请号：PCT/IB2011/001949
申请日：2011-08-25
申请人： CENTROTHERM PHOTOVOLTAICS AG , FLÜCKIGER, Andreas , KÖTSCHAU, Immo , REICHART, Andreas
发明人： FLÜCKIGER, Andreas , KÖTSCHAU, Immo , REICHART, Andreas
IPC分类号： C23C14/06 , C23C14/58 , F27B9/30 , H01L31/18
CPC分类号： C23C14/5806 , C23C14/0623 , F27B9/20 , F27B9/2407 , F27B9/3005 , H01L31/0322 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： Continuous furnace for the thermal conversion of a metallic precursor layer arranged on a substrate (3) in a gas flow, in particular for the conversion of a precursor layer into a CIGSS layer, with a continuous tunnel, comprising a plurality of successive segments (5, 6, 7, 8, 9), wherein the cross-section of the tunnel in a middle segment (6, 7) is smaller than in a segment (5, 8, 9) adjacent the middle segment.
摘要翻译：用于在气流中布置在基板（3）上的金属前驱体层的热转化的连续炉，特别是用于将前体层转变成CIGSS层的连续炉，其包括多个连续段（5 ，6,7,8,9），其中所述隧道在中间段（6,7）中的横截面小于与所述中段相邻的段（5,8,9）。

63. 发明申请

WO2012023027A1 PROCESS FOR CONDENSATION OF CHALCOGEN VAPOUR AND APPARATUS TO CARRY OUT THE PROCESS 审中-公开
标题翻译：浓缩蒸汽的方法和装置的执行过程
公开(公告)号：WO2012023027A1
公开(公告)日：2012-02-23
申请号：PCT/IB2011/001892
申请日：2011-08-17
申请人： CENTROTHERM PHOTOVOLTAICS AG , KÖTSCHAU, Immo , KOCH, Raphael , BOGER, Raimund
发明人： KÖTSCHAU, Immo , KOCH, Raphael , BOGER, Raimund
IPC分类号： C23C14/24
CPC分类号： C23C14/246 , B01D5/0051 , B01D5/009 , C01B17/021 , C01B19/02 , C23C14/0623 , F28B9/08
摘要： Process for the condensation of chalcogen vapour (36) and re¬ circulation of condensed chalcogen (23) into an evaporation unit (1) having the process steps of the feeding of the chal- cogen vapour (36) in the condenser (9), of the condensing of at least part of the chalcogen vapour (36) fed into the con¬ denser (9) into liquid chalcogen (23), of the recirculation of the liquid chalcogen (23) into the evaporation unit (1) via a trap (35) formed as part of a return line (17) and of the pro- vision of a column (21) of liquid chalcogen in the trap (35), of the equalisation of pressure differentials between pres¬ sures prevailing in the condenser (9) and in the evaporation unit (1) by means of this column (21) of liquid chalcogen, of the at least partial melting of a solid chalcogen stopper (22) sealing off the trap (35), and of the control of the flow of liquid chalcogen (23) through the trap (35) by means of a melt valve (24), and apparatus to carry out this process.
摘要翻译：用于使硫属蒸汽（36）冷凝并将冷凝的硫属元素（23）再循环到蒸发单元（1）中的方法，所述蒸发单元具有在冷凝器（9）中进给所述共态蒸汽（36）的方法步骤，将进料到致密器（9）的至少部分硫属元素蒸气（36）冷凝成液体硫属元素（23），通过捕集器将液态硫属元素（23）再循环到蒸发单元（1）中（35）形成为回流管线（17）的一部分，以及在所述阱（35）中的液态硫属钢柱（21）的设计，在冷凝器中存在的压力之间的压差的均衡（ 9）和在蒸发单元（1）中通过该液体硫族元素塔（21）至少部分熔化固体硫霉素阻挡物（22），密封捕集器（35），并控制液体硫属元素（23）通过熔体阀（24）通过捕集器（35）的流动，以及用于执行该过程的装置。

64. 发明申请

WO2011135420A1 PROCESS FOR THE PRODUCTION OF A COMPOUND SEMICONDUCTOR LAYER 审中-公开
标题翻译：生产化合物半导体层的方法
公开(公告)号：WO2011135420A1
公开(公告)日：2011-11-03
申请号：PCT/IB2011/000833
申请日：2011-04-14
申请人： CENTROTHERM PHOTOVOLTAICS AG , EISENMANN, Lorenz , KAMPMANN, Andreas , KÖTSCHAU, Immo , SCHMID, Dieter
发明人： EISENMANN, Lorenz , KAMPMANN, Andreas , KÖTSCHAU, Immo , SCHMID, Dieter
IPC分类号： H01L21/36 , H01L21/02 , H01L31/18 , C23C8/00
CPC分类号： H01L21/02568 , C23C8/62 , C23C14/16 , C23C14/5866 , H01L21/02422 , H01L21/02491 , H01L21/02614 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： Process for the production of a I-III-VI-compo.und semiconductor layer (80), in which a substrate (50) is provided (10, 12) with a coating (63) which has a metallic precursor layer (57), the coating (63) is heated and kept for the duration of a process time at temperatures of at least 350 °C (16) and the metallic precursor layer (57) is thereby converted (16), in the presence of a chalcogen (58; 72), into the compound semiconductor layer (80) while areal contact is provided (14; 24) between a preponderant proportion (15a) of a free surface (15a, 15b; 25) of the coating (63) and a cover (60; 70) during at least part of the process time.
摘要翻译：制备其中具有金属前体层（57）的涂层（63）的基板（10,12）的I-III-VI-组合半导体层（80）的方法，，在至少350℃（16）的温度下将涂层（63）加热并保持处理时间的持续时间，并且金属前体层（57）由此转化（16），在硫属元素在所述涂层（63）的自由表面（15a，15b; 25）的优势比例（15a）和覆盖层（15）之间提供面覆盖（14; 24）的情况下，进入所述化合物半导体层（80）（60; 70）在至少部分处理时间内。

65. 发明申请

WO2011107094A3 SOLARZELLE MIT DIELEKTRISCHER RÜCKSEITENVERSPIEGELUNG UND VERFAHREN ZU DEREN HERSTELLUNG 审中-公开
公开(公告)号：WO2011107094A3
公开(公告)日：2011-09-09
申请号：PCT/DE2011/075036
申请日：2011-03-03
申请人： CENTROTHERM PHOTOVOLTAICS AG , MÜNZER, Adolf , TEPPE, Andreas , SCHÖNE, Jan , SCHLOSSER, Reinhold , KELLER, Steffen
发明人： MÜNZER, Adolf , TEPPE, Andreas , SCHÖNE, Jan , SCHLOSSER, Reinhold , KELLER, Steffen
IPC分类号： H01L31/068 , H01L31/18 , H01L31/0224 , H01L31/052
摘要： Verfahren zur Herstellung einer Solarzelle (70), bei welchem auf eine Rückseite eines Solarzellensubstrats (72) ein Schichtstapel (74, 76) dielektrischer Schichten (74, 76) aufgebracht wird (14, 16; 54, 56), der Schichtstapel (74, 75) erhitzt und während eines Zeitraums von wenigstens 5 Minuten auf Temperaturen von mindestens 700°C gehalten wird (20) sowie Solarzelle (70).

66. 发明申请

WO2010100561A1 PROCESS AND DEVICE FOR THE THERMAL CONVERSION OF METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS USING A CHALCOGEN SOURCE 审中-公开
标题翻译：金属前驱体层转换成半导体层的过程和器件
公开(公告)号：WO2010100561A1
公开(公告)日：2010-09-10
申请号：PCT/IB2010/000472
申请日：2010-03-08
申请人： CENTROTHERM PHOTOVOLTAICS AG , KÖTSCHAU, Immo , LENZ, Reinhard , SCHMID, Dieter , HARTUNG, Robert, Michael
发明人： KÖTSCHAU, Immo , LENZ, Reinhard , SCHMID, Dieter , HARTUNG, Robert, Michael
IPC分类号： C23C14/06 , C23C14/58
CPC分类号： C23C14/0623 , C23C14/5866
摘要： The present invention relates to a process for the thermal conversion of metallic precursor layers on flat substrates into semiconducting layers with a recovery of chalcogen, as well as a device for carrying out the process. The aim of the invention is to provide a rapid and readily executable process for the thermal conversion of metallic precursor layers, as well as a device suitable for carrying out the process with as small as possible primary consumption of chalcogens..This is achieved by forming an inlet-side and outlet-side gas lock (4.1, 4.2, 4.3, 4.4) for closing a furnace chamber (1) in an oxygen-tight manner, introducing one or more substrates (6) prepared with at least one metallic precursor layer into the furnace chamber (1), introducing a chalcogen vapour /carrier gas mixture (10) above the substrates (6) at a pressure close to atmospheric pressure, said mixture being distributed as uniformly as possible over the width of the substrates (6), heating the substrates (6) in the chalcogen vapour/carrier gas atmosphere (10) to a final temperature with the metallic precursor layers being transformed into semiconducting layers, removing the chalcogen vapour that has not been consumed in the reaction, cooling the substrates (6) and removing the latter from the furnace chamber (1). It is advantageous to heat the substrates (6) in a protective gas atmosphere to a temperature at which as far as possible no condensation of chalcogens can take place.
摘要翻译：本发明涉及一种用于在平坦基板上将金属前体层热转化成具有回收硫族元素的半导体层的方法，以及用于实施该方法的装置。本发明的目的是提供一种用于金属前体层的热转化的快速且容易执行的方法，以及适于以尽可能少的硫化氢原子消耗的方式进行该方法的装置。这是通过形成用于以不透气的方式关闭炉室（1）的入口侧和出口侧气体锁（4.1,4.2,4.3,4.4），引入一个或多个由至少一个金属前体层制备的基底（6）在炉室（1）中，在接近大气压的压力下在基板（6）上方引入硫属元素蒸汽/载气混合物（10），所述混合物在基板（6）的宽度上尽可能均匀地分布，，将金属前体层转变为半导体层，将硫霉素蒸汽/载气气氛（10）中的基板（6）加热至最终温度，除去反应中未被消耗的硫属蒸汽，冷却基板（6）并将其从炉室（1）中取出。将保护气体气氛中的基板（6）加热到尽可能不发生硫属元素的冷凝的温度是有利的。

67. 发明申请

WO2010100560A1 PROCESS AND DEVICE FOR THE THERMAL CONVERSION OF METALLIC PRECURSOR LAYERS INTO SEMICONDUCTING LAYERS WITH CHALCOGEN RECOVERY 审中-公开
标题翻译：金属前驱体层转换成半导体层的过程和器件与CHALCOGEN RECOVERY
公开(公告)号：WO2010100560A1
公开(公告)日：2010-09-10
申请号：PCT/IB2010/000462
申请日：2010-03-05
申请人： CENTROTHERM PHOTOVOLTAICS AG , HARTUNG, Robert, Michael , KÖTSCHAU, Immo , SCHMID, Dieter
发明人： HARTUNG, Robert, Michael , KÖTSCHAU, Immo , SCHMID, Dieter
IPC分类号： H01L21/36 , H01L21/02
CPC分类号： H01L21/02568 , C23C14/5866 , H01L21/02614 , H01L31/0322 , Y02E10/541
摘要： The present invention concerns a process for the thermal conversion of metallic precursor layers on flat substrates into semiconducting layers with a recovery of chalcogen, as well as a device for carrying out the process. The aim of the invention is to provide a rapid and readily executable process for the thermal conversion of metallic precursor layers on flat substrates into semiconducting layers, as well as a device suitable for carrying out the process with as small as possible primary consumption of chalcogens. This is achieved by heating substrates in a furnace at approximately atmospheric pressure to a final temperature in the range 400°C to 6000C and transforming them into semiconducting layers in an atmosphere formed from a mixture of at least one carrier gas and chalcogen vapour, wherein chalcogen vapour not consumed in the reaction is made available to the process again via exhaust gas recirculation.
摘要翻译：本发明涉及一种在平坦基板上将金属前体层热转化成具有硫属元素回收的半导体层的方法，以及用于实施该方法的装置。本发明的目的是提供一种用于将平坦基底上的金属前体层热转化成半导体层的快速且容易执行的方法，以及适于以尽可能少的硫原子消耗初次消耗的方式进行该方法的装置。这通过将炉中的基板在大气压下加热到400℃至600℃的最终温度并将其转化成由至少一种载气和硫族元素蒸汽的混合物形成的气氛中的半导体层来实现，其中硫族元素在反应中不消耗的蒸气通过废气再循环再次可用于该方法。

68. 发明申请

WO2010035126A3 DIFFUSION DEVICE FOR THE PRODUCTION OF SOLAR CELLS AND METHOD FOR PRODUCING SOLAR CELLS 审中-公开
公开(公告)号：WO2010035126A3
公开(公告)日：2010-04-01
申请号：PCT/IB2009/006981
申请日：2009-09-28
申请人： CENTROTHERM PHOTOVOLTAICS AG , NUSSBAUMER, Hartmut
发明人： NUSSBAUMER, Hartmut
IPC分类号： H01L21/677 , H01L31/18
摘要： A diffusion device (1; 28) for the production of solar cells comprises a first dopant source applicator {3) by means of which a dopant source (5) can be disposed on a substrate (7), a first continuous furnace (12) arranged downstream in the process direction (10) through which the substrates (7) can pass, by means of which dopant from the dopant source (5) can be diffused into the substrate (7), and a second continuous furnace (14; 44) arranged downstream of the first continuous furnace (12) in the process direction which is disposed such that a surface passivating layer is formed on the substrates (7) while they pass through the second continuous furnace (14; 44), and an etching device (16) disposed between the first (12) and the second (14; 44) continuous furnace which is arranged to at least partially remove layers formed at the surface of the substrates (7) during the passage through the first continuous furnace (12); and a process for producing solar cells (60).

69. 发明申请

WO2007051457A3 ANTIREFLECTIVE COATING ON SOLAR CELLS AND METHOD FOR THE PRODUCTION OF SUCH AN ANTIREFLECTIVE COATING 审中-公开
标题翻译：太阳能电池上的抗反射涂层，以及制造这种抗反射涂层的方法
公开(公告)号：WO2007051457A3
公开(公告)日：2007-07-05
申请号：PCT/DE2006001927
申请日：2006-11-02
申请人： CENTROTHERM PHOTOVOLTAICS AG , MOELLER RAINER , HARTUNG ROBERT MICHAEL
发明人： MOELLER RAINER , HARTUNG ROBERT MICHAEL
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , Y02E10/50
摘要： The invention relates to an antireflective coating on solar cells made of crystalline silicon as well as a method for producing such an antireflective coating. The aim of the invention is to create an antireflective coating on solar cells made of crystalline silicon which makes it possible to optimize the optical and passivating properties thereof while making it possible to easily and economically integrate the production thereof into the production process especially of very thin crystalline silicon solar cells. Said aim is achieved by the fact that the antireflective coating is composed of successive partial layers, i.e. a lower partial layer (S1) which covers the crystalline silicon, is embodied as an antireflective coating and as passivation with a particularly great hydrogen concentration, and is covered by an upper partial layer (S2) having an increased barrier effect against hydrogen diffusion.
摘要翻译：晶体硅太阳能电池上的抗反射涂层及其制造方法技术领域本发明涉及晶体硅太阳能电池上的抗反射涂层及其制造方法。本发明提供太阳能电池上的抗反射涂层是从晶体硅创建，无论是光学和钝化特性的最佳设计使得和它们的制备可以在生产过程中，特别是非常薄的晶体硅太阳能电池的容易和经济集成。实现的是，连续子层的防反射涂层由其中形成低的事实，结晶硅（S），其覆盖部分层（S1）作为防反射涂层和钝化具有特别高的氢含量，顶层的（S2）覆盖着增加的屏障效应，防止氢向外扩散。

70. 发明申请

WO2006133695A1 VERFAHREN ZUR ENTFERNUNG EINER DOTIERTEN OBERFLÄCHENSCHICHT AN RÜCKSEITEN VON KRISTALLINEN SILIZIUM-SOLARWAFERN 审中-公开
标题翻译：方法去除掺杂表层BACK晶体硅太阳能硅片
公开(公告)号：WO2006133695A1
公开(公告)日：2006-12-21
申请号：PCT/DE2006/001058
申请日：2006-06-14
申请人： FRAUNHOFER-GESELLSCHAFT ZÜR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. , CENTROTHERM PHOTOVOLTAICS AG , HEINTZE, Moritz , MÖLLER, Rainer , WANKA, Harald , LOPEZ, Elena , HOPFE, Volkmar , DANI, Ines , ROSINA, Milan
发明人： HEINTZE, Moritz , MÖLLER, Rainer , WANKA, Harald , LOPEZ, Elena , HOPFE, Volkmar , DANI, Ines , ROSINA, Milan
IPC分类号： H01L31/18 , H01L21/3065
CPC分类号： H01L31/1804 , H01L21/3065 , H01L27/142 , Y02E10/547 , Y02P70/521
摘要： Die Erfindung betrifft ein Verfahren zum einseitigen Entfernen einer dotierten Oberflächenschicht an Rückseiten von kristallinen Silizium-Solarwafern. Gemäss der gestellten Aufgabe sollen dotierte Oberflächenschichten von Rückseiten solcher Solarwafer kostengünstig und bei substratschonender Handhabung entfernt werden können. Ausserdem soll die Frontseite nicht verändert werden. Erfindungsgemäss wird im Bereich des Atmosphärendruckes mit einem Plasma ein Ätzgas auf die rückseitige Oberfläche von Slizium-Solarwafern gerichtet.
摘要翻译：本发明涉及一种方法，用于除去在晶体硅太阳能晶片的背面的一掺杂的表面层。根据对象集合是可以以低成本和衬底温和处理去除这样的太阳能晶片的背面表面的掺杂表面层。此外，前不应改变。根据本发明涉及在用等离子蚀刻气体，Slizium太阳能晶片的背面大气压的面积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式