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    • 52. 发明授权
    • Method and apparatus for reviewing defects
    • 检查缺陷的方法和装置
    • US08090190B2
    • 2012-01-03
    • US12695090
    • 2010-01-27
    • Ryo NakagakiToshifumi Honda
    • Ryo NakagakiToshifumi Honda
    • G06K9/00
    • G06T7/001G06T2207/30148
    • An apparatus for reviewing defects including an image processing section (defect classification device section) with a function of estimating a non-defective state (reference image) of a portion in which the defect exists by use of a defect image, and a function of judging criticality or non-flat state of the defect by use of the estimation result. It becomes possible to establish both of a high-throughput image collecting sequence in which any reference image is not acquired and high-precision defect classification, and then to realize both of a high performance classifying function and a high-throughput image collecting function in a defect reviewing apparatus which automatically collects and classifies images of defects existing on a sample of a semiconductor wafer or the like.
    • 一种用于检查缺陷的装置,包括具有通过使用缺陷图像来估计存在缺陷的部分的非缺陷状态(参考图像)的功能的图像处理部分(缺陷分类装置部分),以及判断 通过使用估计结果,缺陷的关键性或非平坦状态。 可以建立不获取任何参考图像的高通量图像采集序列和高精度缺陷分类,然后实现高性能分类功能和高吞吐量图像采集功能 缺陷检查装置,其自动地收集和分类存在于半导体晶片等的样本上的缺陷的图像。
    • 57. 发明授权
    • Defect review method and device for semiconductor device
    • 半导体器件缺陷检查方法和器件
    • US07626163B2
    • 2009-12-01
    • US12033470
    • 2008-02-19
    • Toshifumi Honda
    • Toshifumi Honda
    • H01J37/28H01J37/256G01N23/04
    • H01J37/28G01N2223/6116G06T7/0006G06T2207/10056G06T2207/30148H01J37/265H01J2237/2817
    • A defect review method and device of the invention solves the previous problem of a long inspection time that is caused by the increase of a process-margin-narrow pattern as a result of the size reduction of a semiconductor device. With the method and device of the invention, an SEM (Scanning Electron Microscope) image is derived by capturing an image of a process-margin-narrow pattern portion extracted based on lithography simulation with image-capturing conditions of a relatively low resolution. The resulting SEM image is compared with CAD (Computer Aided Design) data for extraction of any abnormal section. An image of the area extracted as being abnormal is captured again, and the resulting high-resolution SEM image is compared again with the CAD data for defect classification based on the feature amount of the image, e.g., shape deformation. The abnormal section is then measured in dimension at a position preset for the classification result so that the time taken for inspection can be prevented from increasing.
    • 本发明的缺陷评价方法和装置解决了由于半导体器件的尺寸减小导致的工艺边缘窄度图案的增加而导致的长检查时间的先前问题。 利用本发明的方法和装置,通过捕获基于光刻模拟提取的处理边缘窄图案部分的图像,以相对低分辨率的图像捕获条件来导出SEM(扫描电子显微镜)图像。 将所得SEM图像与CAD(计算机辅助设计)数据进行比较,以提取任何异常部分。 再次捕获提取为异常的区域的图像,并且基于图像的特征量(例如形状变形)将所得到的高分辨率SEM图像再次与用于缺陷分类的CAD数据进行比较。 然后在为分类结果预设的位置处的尺寸上测量异常部分,使得可以防止检查所花费的时间增加。
    • 58. 发明申请
    • System and method for monitoring semiconductor device manufacturing process
    • 半导体器件制造工艺监控系统及方法
    • US20090231424A1
    • 2009-09-17
    • US12379645
    • 2009-02-26
    • Toshifumi HondaYuuji Takagi
    • Toshifumi HondaYuuji Takagi
    • H04N7/18
    • G06T7/0006G06T2207/10061G06T2207/30148H01L22/12H01L2924/0002H01L2924/00
    • A hotspot searching apparatus manufactures a small number of chips or regions on a semiconductor wafer under respectively different manufacturing process conditions, compares SEM images of their external appearances to output a point having large differences as a narrow process window, that is, a process monitoring point that should be managed in mass production, the narrow process window having a narrow manufacturing process condition (exposure condition) in the manufacturing of the semiconductor wafer, and sets the point as a measurement point by a CD-SEM apparatus, such that it extracts and determines plural circuit pattern parts having a narrow manufacturing process margin as the process monitoring point in a short time and a process monitoring point monitoring performs shape inspection or shape length measurement in detail at high resolution.
    • 热点搜索装置分别在不同的制造工艺条件下制造半导体晶片上的少量芯片或区域,比较其外观的SEM图像以输出具有较大差异的点作为窄工艺窗口,即处理监视点 应在大规模生产中进行管理,在半导体晶片的制造中具有窄制造工艺条件(曝光条件)的窄工艺窗口,并且通过CD-SEM装置将点设定为测量点,使得其提取和 在短时间内确定具有窄制造工艺余量的多个电路图形部分作为处理监视点,并且处理监视点监视以高分辨率详细地进行形状检查或形状长度测量。
    • 59. 发明申请
    • METHOD AND APPARATUS FOR DISPLAYING DETECTED DEFECTS
    • 显示检测缺陷的方法和装置
    • US20070194231A1
    • 2007-08-23
    • US11677669
    • 2007-02-22
    • Kenji NakahiraToshifumi Honda
    • Kenji NakahiraToshifumi Honda
    • G21K7/00
    • H01J37/28H01J2237/24592H01J2237/2807H01J2237/2817
    • Defect image display screens are capable of accurately presenting features of defects. On a thumbnail display screen of a defect, images likely to most clearly indicating features of the defect are determined in units of the defect from, for example, inspection information and a defect type, and then are displayed. On a detail display screen of a defect, for example, images for being displayed so as to clearly indicate features of the defect, and the display sequence thereof are determined in accordance with, for example, inspection information and a defect type, and then are displayed. Further, steps for acquiring a display image during or after defect image acquisition by using, for example, a different defect image acquisition apparatus and a different imaging condition in accordance with preliminarily specified rules are added to an imaging sequence (procedure).
    • 缺陷图像显示屏幕能够准确地呈现缺陷的特征。 在缺陷的缩略图显示屏幕上,可能以最清楚地指示缺陷特征的图像以例如检查信息和缺陷类型的缺陷为单位来确定,然后被显示。 在缺陷的详细显示屏幕上,例如,根据例如检查信息和缺陷类型来确定用于显示以清楚地指示缺陷的特征的图像及其显示顺序,然后是 显示。 另外,通过使用例如不同的缺陷图像获取装置和根据预先规定的规则的不同的成像条件,在缺陷图像获取期间或之后获取显示图像的步骤被添加到成像序列(程序)中。