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51. 发明授权

US06426255B1 Process for making a semiconductor integrated circuit device having a dynamic random access memory 失效
标题翻译：制造具有动态随机存取存储器的半导体集成电路器件的工艺
公开(公告)号：US06426255B1
公开(公告)日：2002-07-30
申请号：US09549085
申请日：2000-04-13
申请人： Isamu Asano , Yoshitaka Nakamura , Yuzuru Ohji , Tatsuyuki Saito , Takashi Yunogami
发明人： Isamu Asano , Yoshitaka Nakamura , Yuzuru Ohji , Tatsuyuki Saito , Takashi Yunogami
IPC分类号： H01L218242
CPC分类号： H01L27/10894 , H01L21/2885 , H01L27/10814 , H01L27/10882 , H01L28/55 , H01L28/60
摘要： After formation of a groove in a silicon oxide film, a Pt film is formed inside of the groove by electroplating using a conductive underlying film, which has been formed in advance below the silicon oxide film, as a cathode electrode. The silicon oxide film is then removed by etching, followed by dry etching of the conductive underlying film with the Pt film as a mask, whereby a lower electrode of a capacitor is formed from the Pt film and the conductive underlying film which has remained below the Pt film.
摘要翻译：在氧化硅膜中形成沟槽之后，通过使用在氧化硅膜之前预先形成的导电性底膜进行电镀而在沟槽内部形成Pt膜作为阴极电极。然后通过蚀刻去除氧化硅膜，然后用Pt膜作为掩模对导电性底膜进行干蚀刻，由此由Pt膜和导电性底层膜形成电容器的下电极，该电极保持在低于 Pt膜。

52. 发明授权

US08614147B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08614147B2
公开(公告)日：2013-12-24
申请号：US12801127
申请日：2010-05-24
申请人： Masanori Sakai , Tatsuyuki Saito
发明人： Masanori Sakai , Tatsuyuki Saito
IPC分类号： H01L21/443
CPC分类号： H01L21/28556 , C23C16/34 , C23C16/45525 , C23C16/45546 , C23C16/56 , H01L21/28562 , H01L21/76862
摘要： A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.
摘要翻译：通过向晶片供给TiCl4和NH3与TiCl4反应而形成TiN中间膜的第一步骤形成TiN膜，并且控制用于使没有经历取代反应的键合分支的处理条件保持在在TiCl4的一部分处的预定浓度，以及通过向晶片供给H2来代替包含在TiN中间膜中的结合分支的第二步骤，第一步骤和第二步骤依次进行。

53. 发明申请

US20110198954A1 Electric motor and reduction motor 有权
标题翻译：电机和还原电机
公开(公告)号：US20110198954A1
公开(公告)日：2011-08-18
申请号：US12998316
申请日：2009-10-07
申请人： Tatsuyuki Saito , Ryuichi Takakusagi , Toshiyuki Kimura , Yoshichika Kawashima , Kenji Sakata
发明人： Tatsuyuki Saito , Ryuichi Takakusagi , Toshiyuki Kimura , Yoshichika Kawashima , Kenji Sakata
IPC分类号： H01R39/32 , H02K7/116
CPC分类号： H02K3/28 , H02K7/1166 , H02K13/10 , H02K23/04 , H02K23/34
摘要： Disclosed is a motor in which a commutator (10) is provided with connecting wires which short-circuit equipotential segments; brushes (21) are constituted by a low-speed brush (21a), a high-speed brush (21b), and a common brush (21c) used in common by the low-speed and high-speed brushes, and are juxtaposed along the circumferential direction. The circumferential brush width (W2) of the high-speed brush is set to be smaller than the circumferential brush width (W1) of the low-speed brush. The high-speed brush and the low-speed brush are formed so that simultaneous sliding contact with equipotential segments (15) can be avoided. Additionally, armature cores (8) are provided such that a plurality of teeth (12) is point-symmetrical about a rotary shaft (3) at equal intervals in the circumferential direction, and the teeth and slots (13) are formed so as to exist alternately at intervals of 90 degrees in the circumferential direction. By virtue of the above configuration, vibration and noise can be reduced while achieving miniaturization and high performance of a motor.
摘要翻译：公开了一种电动机，其中换向器（10）设置有短路等电位段的连接线; 刷子（21）由低速和高速刷子共同使用的低速刷子（21a），高速刷子（21b）和普通刷子（21c）构成，并且并排圆周方向。高速刷的圆周刷宽度（W2）设定为小于低速刷的周向刷宽（W1）。形成高速电刷和低速电刷，可以避免与等电位段（15）的同时滑动接触。另外，电枢铁芯（8）设置成使得多个齿（12）在圆周方向上以相等的间隔围绕旋转轴（3）点对称，并且形成齿和槽（13），以便在圆周方向以90度的间隔交替地存在。通过上述结构，可以在实现电动机的小型化和高性能的同时降低振动和噪音。

54. 发明授权

US07569476B2 Semiconductor integrated circuit device and a method of manufacturing the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US07569476B2
公开(公告)日：2009-08-04
申请号：US11444316
申请日：2006-06-01
申请人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
发明人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
IPC分类号： H01L21/4763
CPC分类号： H01L21/2855 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.
摘要翻译：在制造半导体集成电路器件时，在形成于半导体衬底上的第一级互连件上的层间绝缘膜中形成互连沟槽和接触孔，在沟槽和接触孔内部形成阻挡膜，使其膜厚度从孔的底部的中心朝向接触孔底部的侧壁增加，在阻挡膜上形成铜膜，并且通过抛光形成第二级互连和连接器部分（插塞）通过CMP。以这种方式，通过连接器部分（插头）从第二级互连件流向第一级互连件的电流的几何最短路径与具有最低电阻的薄阻挡膜部分不一致，使得电流路径可以分散，并且电子的浓度不容易发生。

55. 发明授权

US06764945B2 Method of manufacturing a multilayer metallization structure with non-directional sputtering method 失效
标题翻译：使用非定向溅射法制造多层金属化结构的方法
公开(公告)号：US06764945B2
公开(公告)日：2004-07-20
申请号：US09822318
申请日：2001-04-02
申请人： Hiroshi Ashihara , Tatsuyuki Saito , Uitsu Tanaka , Hidenori Suzuki , Hideaki Tsugane , Yasuko Yoshida , Ken Okutani
发明人： Hiroshi Ashihara , Tatsuyuki Saito , Uitsu Tanaka , Hidenori Suzuki , Hideaki Tsugane , Yasuko Yoshida , Ken Okutani
IPC分类号： H01L214763
CPC分类号： H01L21/2855 , H01L21/28556 , H01L21/32051 , H01L21/76801 , H01L21/76804 , H01L21/76805 , H01L21/76814 , H01L21/76834 , H01L21/76837 , H01L21/76843 , H01L21/76846 , H01L21/7685 , H01L21/76855 , H01L21/76877 , H01L2221/1078 , H01L2924/0002 , H01L2924/00
摘要： In order to form a good contact between metallizations and improve the reliability and product yield of a semiconductor integrated circuit device, a plug is formed in a contact hole by depositing a first sputter film inside of the contact hole by traditional sputtering, depositing a second sputter film over the first sputter film by long throw sputtering, depositing a W film over the second sputtering film by CVD and removing the first and second sputter films and the W film from the outside of the contact hole. The barrier properties can be improved by constituting a barrier film from the first sputter film and second sputter film which are different in directivity.
摘要翻译：为了在金属化之间形成良好的接触并提高半导体集成电路器件的可靠性和产品产量，通过传统溅射在接触孔内部沉积第一溅射膜，在接触孔中形成插塞，沉积第二溅射通过长溅射溅射第一溅射膜上的膜，通过CVD在第二溅射膜上沉积W膜，并从接触孔的外部除去第一和第二溅射膜和W膜。可以通过从方向性不同的第一溅射膜和第二溅射膜构成阻挡膜来改善阻挡性。

56. 发明授权

US09045825B2 Method of forming metal-containing film 有权
标题翻译：形成含金属膜的方法
公开(公告)号：US09045825B2
公开(公告)日：2015-06-02
申请号：US13398523
申请日：2012-02-16
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
IPC分类号： C23C16/34 , C23C16/40 , C23C16/455 , H01L21/02 , C23C16/30 , C23C16/54 , H01L21/285
CPC分类号： C23C16/45544 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45523 , C23C16/45527 , C23C16/45531 , C23C16/45561 , C23C16/45578 , C23C16/52 , C23C16/54 , H01L21/02172 , H01L21/0228 , H01L21/02697 , H01L21/28562
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate.
摘要翻译：提供了与现有技术相比能够增加要形成的膜的功函数的半导体器件制造方法和衬底处理装置。一种循环，包括（a）将含金属的气体供给到容纳基板的处理室中（b）向处理室供应含氮气体; 和（c）向处理室供给含氧气体，含卤素气体及其组合中的一种，进行多次以在基板上形成含金属膜。

57. 发明授权

US08941283B2 Electric motor and reduction motor 有权
标题翻译：电机和还原电机
公开(公告)号：US08941283B2
公开(公告)日：2015-01-27
申请号：US13859475
申请日：2013-04-09
申请人： Tatsuyuki Saito , Ryuichi Takakusagi , Toshiyuki Kimura , Yoshichika Kawashima , Kenji Sakata
发明人： Tatsuyuki Saito , Ryuichi Takakusagi , Toshiyuki Kimura , Yoshichika Kawashima , Kenji Sakata
IPC分类号： H02K13/00
CPC分类号： H02K3/28 , H02K7/1166 , H02K13/10 , H02K23/04 , H02K23/34
摘要： A windshield wiper motor includes a reduction mechanism unit and an electric motor. The electric motor includes a yoke formed in a bottomed cylindrical shape; four magnets arranged in a cylindrical shape on an inner surface of the yoke, an armature including a rotary shaft rotatably supported by the yoke, an armature core fixed to the rotary shaft and including any teeth of fourteen teeth, eighteen teeth, and twenty two teeth, a commutator being fixed to the rotary shaft and including a plurality of segments insulated from each other with the same number as the number of the teeth of the armature core, an armature coil being wound, and a plurality of connecting wires respectively connected to the segments arranged to face each other around the rotary shaft, and a first brush, a second brush, and a third brush coming into sliding contact with the segments of the commutator.
摘要翻译：挡风玻璃刮水器马达包括减速机构单元和电动马达。电动机包括形成为有底圆筒形状的磁轭; 在磁轭的内表面上以圆柱形形式布置的四个磁体，包括由该磁轭可旋转地支撑的旋转轴的电枢，固定到旋转轴的电枢铁芯，包括十四个齿，十八个齿和二十二个齿的任何齿固定在所述旋转轴上的换向器，并且具有与所述电枢铁芯的齿数，卷绕的电枢线圈相同数量的彼此绝缘的多个段，以及分别连接到所述电枢铁芯的多个连接线被布置为围绕旋转轴彼此面对的部分，以及第一刷子，第二刷子和与换向器的段滑动接触的第三刷子。

58. 发明授权

US08691708B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08691708B2
公开(公告)日：2014-04-08
申请号：US13012320
申请日：2011-01-24
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
IPC分类号： H01L21/31
CPC分类号： H01L21/32051 , C23C16/34 , C23C16/45523 , C23C16/45574 , H01L21/28556 , H01L21/28562
摘要： A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film at a higher film-forming rate. The method includes loading a substrate into a processing chamber; simultaneously starting a supply of a first processing gas and a second processing gas to form a film on the substrate, simultaneously stopping the supply of the first and second processing gas; removing the remaining first and second processing gas from the processing chamber; supplying the second processing gas into the processing chamber without supplying the first processing gas; removing the second processing gas starting and then stopping a supply of the first processing gas into the processing chamber without supplying the second processing gas; removing the first processing gas; and unloading the substrate from the processing chamber.
摘要翻译：一种制造半导体器件的方法和能够以更高的成膜速度提供TiN膜的衬底处理设备。该方法包括将衬底加载到处理室中; 同时开始供应第一处理气体和第二处理气体以在基板上形成膜，同时停止供应第一和第二处理气体; 从处理室中除去剩余的第一和第二处理气体; 在不提供第一处理气体的情况下将第二处理气体供应到处理室中; 除去所述第二处理气体，然后停止将所述第一处理气体供给到所述处理室中，而不供给所述第二处理气体; 去除第一处理气体; 并从处理室卸载基板。

59. 发明申请

US20120086107A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件制造方法，衬底加工设备和半导体器件
公开(公告)号：US20120086107A1
公开(公告)日：2012-04-12
申请号：US13250708
申请日：2011-09-30
申请人： Katsuhiko Yamamoto , Yuji Takebayashi , Tatsuyuki Saito , Masahisa Okuno
发明人： Katsuhiko Yamamoto , Yuji Takebayashi , Tatsuyuki Saito , Masahisa Okuno
IPC分类号： H01L29/02 , H01L21/26 , C23C16/511
CPC分类号： H01L21/67115 , C23C16/405 , C23C16/56 , H01L21/02189 , H01L21/0228 , H01L21/02337 , H01L21/02345 , H01L28/40
摘要： A semiconductor device manufacturing method includes loading a substrate, on which a high-k film is formed, into a processing chamber, performing a reforming process by heating the high-k film through irradiation of a microwave on the substrate, and unloading the substrate from the processing chamber.
摘要翻译：一种半导体器件制造方法，包括将形成有高k膜的衬底加载到处理室中，通过在衬底上照射微波加热高k膜并进行重整处理，并将衬底从处理室。

60. 外观设计

USD655255S1 Boat of wafer processing apparatus 有权
标题翻译：晶圆加工设备船
公开(公告)号：USD655255S1
公开(公告)日：2012-03-06
申请号：US29378016
申请日：2010-10-28
申请人： Yuji Takebayashi , Tatsuyuki Saito , Tetsuo Yamamoto , Tsutomu Kato , Satoshi Okada
设计人： Yuji Takebayashi , Tatsuyuki Saito , Tetsuo Yamamoto , Tsutomu Kato , Satoshi Okada

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