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1. 外观设计

USD655682S1 Boat of wafer processing apparatus 有权
公开(公告)号：USD655682S1
公开(公告)日：2012-03-13
申请号：US29378011
申请日：2010-10-28
申请人： Yuji Takebayashi , Tatsuyuki Saito , Tetsuo Yamamoto , Tsutomu Kato , Satoshi Okada
设计人： Yuji Takebayashi , Tatsuyuki Saito , Tetsuo Yamamoto , Tsutomu Kato , Satoshi Okada

2. 外观设计

USD655255S1 Boat of wafer processing apparatus 有权
标题翻译：晶圆加工设备船
公开(公告)号：USD655255S1
公开(公告)日：2012-03-06
申请号：US29378016
申请日：2010-10-28
申请人： Yuji Takebayashi , Tatsuyuki Saito , Tetsuo Yamamoto , Tsutomu Kato , Satoshi Okada
设计人： Yuji Takebayashi , Tatsuyuki Saito , Tetsuo Yamamoto , Tsutomu Kato , Satoshi Okada

3. 发明申请

US20100087069A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：制造半导体器件和衬底加工设备的方法
公开(公告)号：US20100087069A1
公开(公告)日：2010-04-08
申请号：US12571688
申请日：2009-10-01
申请人： Hironobu MIYA , Kazuyuki Toyoda , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi , Kenji Ono , Atsushi Morikawa , Satoshi Okada
发明人： Hironobu MIYA , Kazuyuki Toyoda , Masanori Sakai , Norikazu Mizuno , Tsutomu Kato , Yuji Takebayashi , Kenji Ono , Atsushi Morikawa , Satoshi Okada
IPC分类号： H01L21/316 , C23C16/46 , C23C16/513
CPC分类号： C23C16/405 , C23C16/483 , H01L21/02164 , H01L21/02181 , H01L21/02189 , H01L21/02277 , H01L21/0228 , H01L21/3141 , H01L21/31608 , H01L21/31641 , H01L21/31645
摘要： The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.
摘要翻译：可以提高氧化膜的覆盖特性或负载效果，而不必增加氧化剂的供给量或时间。提供了制造半导体器件的方法。该方法包括将至少一个衬底装载到处理室; 通过在加热所述基板的同时向所述处理室交替地供给第一反应材料和含有氧原子的第二反应材料，在所述基板上形成氧化膜; 以及从所述处理室中卸载所述基板，其中，通过将所述基板保持在所述第一反应材料的自身分解温度以下并且向所述第二反应材料照射紫外线的温度进行氧化膜的形成。

4. 外观设计

USD610559S1 Reaction tube 有权
公开(公告)号：USD610559S1
公开(公告)日：2010-02-23
申请号：US29327745
申请日：2008-11-12
申请人： Satoshi Okada , Yuji Takebayashi , Tsutomu Kato , Atsuhiko Ashitani , Shintaro Kogura
设计人： Satoshi Okada , Yuji Takebayashi , Tsutomu Kato , Atsuhiko Ashitani , Shintaro Kogura

5. 发明授权

US08343277B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08343277B2
公开(公告)日：2013-01-01
申请号：US12710549
申请日：2010-02-23
申请人： Yuji Takebayashi , Satoshi Okada , Takashi Nakagawa
发明人： Yuji Takebayashi , Satoshi Okada , Takashi Nakagawa
IPC分类号： C23C16/455 , C23C16/46 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： H01L21/67109 , C23C16/4402 , C23C16/4557 , C23C16/45578
摘要： To inhibit a diffusion of particles into a processing chamber and reduce a cost required for exchanging a gas filter. A substrate processing apparatus comprises: a processing chamber processing substrates; a gas supply part supplying processing gas into the processing chamber; wherein the gas supply part has a gas supply nozzle disposed in the processing chamber; a filter removing impurities contained in the processing gas; and a gas supply port opened in the gas supply nozzle, for supplying into the processing chamber the processing gas from which impurities are removed by the filter.
摘要翻译：抑制颗粒扩散到处理室中并降低更换气体过滤器所需的成本。一种基板处理装置，包括：处理基板; 将处理气体供给到处理室内的气体供给部; 其中所述气体供应部分具有设置在所述处理室中的气体供给喷嘴; 过滤器，其去除处理气体中所含的杂质; 以及在所述气体供给喷嘴中开口的供气口，用于向所述处理室供给由所述过滤器除去了杂质的处理气体。

6. 发明申请

US20100083898A1 Substrate processing apparatus 审中-公开
标题翻译：基板加工装置
公开(公告)号：US20100083898A1
公开(公告)日：2010-04-08
申请号：US12458816
申请日：2009-07-23
申请人： Shintaro Kogura , Yuji Takebayashi , Atsuhiko Ashitani , Satoshi Okada
发明人： Shintaro Kogura , Yuji Takebayashi , Atsuhiko Ashitani , Satoshi Okada
IPC分类号： C23C16/52 , C23C16/00
CPC分类号： C23C16/45578 , C23C16/405 , C23C16/45546 , H01L21/3141 , H01L21/31641 , H01L21/67109
摘要： There are provided an inner tube in which a substrate is stored; an outer tube surrounding the inner tube; a gas nozzle disposed in the inner tube; a gas ejection hole opened on the gas nozzle; a gas supply unit supplying gas into the inner tube through the gas nozzle; a gas exhausts hole opened on the side wall of the inner tube; and an exhaust unit exhausting a space between the outer tube and the inner tube and generating a gas flow in the inner tube toward the gas exhaust hole from the gas ejection hole, wherein the side wall of the inner tube is constituted, so that a distance between an outer edge of the substrate and the gas exhaust hole is set to be longer than a distance between the outer edge of the substrate and the gas ejection hole.
摘要翻译：设置有存储基板的内管; 围绕内管的外管; 设置在内管中的气体喷嘴; 在气体喷嘴上开口的气体喷射孔; 气体供给单元，其通过所述气体喷嘴向所述内管供给气体; 在内管的侧壁上开口的排气孔; 以及排气单元，其排出所述外管和所述内管之间的空间，并且从所述气体喷射孔向所述内管朝向所述排气孔产生气流，其中，所述内管的侧壁被构成，基板的外缘与排气孔之间的距离设定为比基板的外缘和气体喷出孔的距离长。

7. 发明申请

US20100035437A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20100035437A1
公开(公告)日：2010-02-11
申请号：US12510572
申请日：2009-07-28
申请人： Hirohisa YAMAZAKI , Satoshi Okada , Tsutomu Kato
发明人： Hirohisa YAMAZAKI , Satoshi Okada , Tsutomu Kato
IPC分类号： H01L21/465
CPC分类号： F16L25/00 , C23C16/405 , C23C16/4405 , C23C16/4408 , C23C16/45527 , C23C16/45546 , H01L21/02271
摘要： Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A substrate processing apparatus includes a substrate holder holding horizontally oriented and stacked substrates, an inner tube accommodating the substrate holder, an outer tube enclosing the inner tube, a gas nozzle installed in the inner tube, a gas injection hole formed in the gas nozzle, a source gas supply unit supplying source gas to an inside of the inner tube through the gas nozzle, a gas exhaust outlet formed in a sidewall of the inner tube, an exhaust unit exhausting a gap between the outer tube and the inner tube to create a gas stream inside the inner tube from the gas injection hole to the gas exhaust outlet, and a gas penetration preventing cylinder enclosing a region of the substrate holder lower than a region of the substrate holder where the substrates are stacked.
摘要翻译：晶片表面和晶片之间的基板加工均匀性得到改善。基板处理装置包括保持水平取向和堆叠的基板的基板保持器，容纳基板保持件的内管，封装内管的外管，安装在内管中的气体喷嘴，形成在气体喷嘴中的气体注入孔，源气体供给单元，其通过气体喷嘴向内管的内部供给源气体，形成在内管的侧壁中的排气口，排出外管和内管之间的间隙的排气单元，从气体喷射孔到气体排出口的内管内的气流，以及包围基板保持器的区域的气体穿透防止气缸低于基板保持器的堆叠基板的区域。

8. 发明授权

US08741063B2 Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08741063B2
公开(公告)日：2014-06-03
申请号：US12510572
申请日：2009-07-28
申请人： Hirohisa Yamazaki , Satoshi Okada , Tsutomu Kato
发明人： Hirohisa Yamazaki , Satoshi Okada , Tsutomu Kato
IPC分类号： C23C16/458
CPC分类号： F16L25/00 , C23C16/405 , C23C16/4405 , C23C16/4408 , C23C16/45527 , C23C16/45546 , H01L21/02271
摘要： Substrate processing uniformity is improved in the surfaces of wafers and between the wafers. A substrate processing apparatus including: a substrate holder including a substrate stacking part configured to hold a plurality of vertically stacked substrates and a cylinder part disposed under the substrate stacking part to enclose a lower portion of the substrate holder; an inner tube configured to accommodate the substrate holder wherein a space between the cylinder part and a lower portion of the inner tube is smaller than a space between the substrate stacking part and an upper portion of the inner tube; an outer tube configured to enclose the inner tube with a gap therebetween; a gas nozzle installed in the inner tube; a gas injection hole disposed in the gas nozzle; a source gas supply unit configured to supply a source gas to an inside of the inner tube through the gas nozzle; a gas exhaust outlet disposed in a sidewall of the inner tube such that the inside of the inner tube communicates with the gap through the plurality of gas exhaust outlets; an exhaust unit configured to exhaust the gap so as to create a gas stream inside the inner tube in a direction from the gas injection hole to the plurality of gas exhaust outlets.
摘要翻译：晶片表面和晶片之间的基板加工均匀性得到改善。一种基板处理装置，包括：基板保持器，其包括被配置为保持多个垂直堆叠的基板的基板堆叠部分和设置在所述基板堆叠部分下方以包围所述基板保持器的下部的圆筒部分; 内管，其构造成容纳所述基板保持器，其中所述筒部与所述内管的下部之间的间隔小于所述基板堆叠部与所述内管的上部之间的间隔; 外管，其构造成围绕内管间隙; 安装在内管中的气体喷嘴; 设置在所述气体喷嘴中的气体注入孔; 源气体供给单元，其构造成通过所述气体喷嘴将源气体供给到所述内管的内部; 排气出口，其设置在所述内管的侧壁中，使得所述内管的内部通过所述多个排气出口与所述间隙连通; 排气单元，其构造成排出所述间隙，以在从所述气体注入孔到所述多个排气出口的方向上在所述内管内产生气流。

9. 发明授权

US08950987B2 Method of boring work by 5-axis machining double-housing machine tool and 5-axis machining double-housing machine tool 有权
标题翻译：五轴加工双机床加工双轴机床五轴加工方法
公开(公告)号：US08950987B2
公开(公告)日：2015-02-10
申请号：US13128187
申请日：2009-08-31
申请人： Satoshi Okada , Masazumi Nakanishi , Kazuki Uemura , Yasushi Manabe , Yuji Kuramochi
发明人： Satoshi Okada , Masazumi Nakanishi , Kazuki Uemura , Yasushi Manabe , Yuji Kuramochi
IPC分类号： B23C1/12 , B23Q1/54 , B23B35/00 , B23B39/00
CPC分类号： B23Q1/5406 , B23B35/00 , B23B39/00 , B23Q2220/006 , Y10T29/5107 , Y10T29/5114 , Y10T409/303808 , Y10T409/304424 , Y10T409/307672 , Y10T409/307728 , Y10T409/308232 , Y10T409/308288 , Y10T409/308512 , Y10T409/50082
摘要： A slip ring is accommodated in a ram 34. The slip ring includes a fixed portion 72 having a feed element connected to a power source and a movable portion 73 electrically connected to the feed element. The movable portion 73 includes a contact 75 for supplying electricity to a spindle unit 100 and an electric device of a spindle head 118. After determining the position of a saddle 32 in a Y-axis direction and the position of a table in an X-axis direction, the position of the spindle head 118 about a B-axis is determined. Then, the ram 34 is moved along the Z-axis direction with the spindle unit 100 revolved about the C-axis, and, with a non-rotational cutting tool 170 attached to the spindle unit 100, a hole is bored in a workpiece W on the table.
摘要翻译：滑环容纳在冲头34中。滑环包括具有连接到动力源的进给元件的固定部分72和与进给元件电连接的可移动部分73。可移动部分73包括用于向主轴单元100供电的触头75和主轴头118的电气装置。在确定鞍座32在Y轴方向上的位置和X轴方向上的台的位置之后，确定主轴头118围绕B轴的位置。然后，主轴单元100围绕C轴旋转，使活塞34沿着Z轴方向移动，并且通过未旋转切削工具170附接到主轴单元100，在工件W中钻孔在桌子上。

10. 发明申请

US20140329914A1 Amphiphilic Peptides for Thoracic Air Leakage Occlusion 审中-公开
标题翻译：两亲性肽用于胸腔漏气闭塞
公开(公告)号：US20140329914A1
公开(公告)日：2014-11-06
申请号：US14239954
申请日：2012-08-31
申请人： Satoru Kobayashi , Satoshi Okada , Kentaro Takamura
发明人： Satoru Kobayashi , Satoshi Okada , Kentaro Takamura
IPC分类号： A61K47/42 , A61K31/397
CPC分类号： A61K47/42 , A61K31/397 , A61K38/10
摘要： Provided are compounds and methods useful for sealing air leaks in the thoracic cavity. Compounds and compositions of the invention comprise certain amphiphilic peptides, 8-200 amino acid residues long, that self-assemble spontaneously to form a gel in the presence of physiological pH and/or in the presence of a cation. In one embodiment, the peptide comprises a repeated sequence arginine-alanine-aspartic acid-alanine (RADA). Methods of the invention include a method of occluding a pulmonary air leak in a subject, comprising applying a compound of the invention to the site of a pulmonary air leak. The compounds and methods of the invention can be combined with other agents useful to treat cancer, inflammation, or infection.
摘要翻译：提供了用于密封胸腔漏气的化合物和方法。本发明的化合物和组合物包含长达8-200个氨基酸残基的某些两亲肽，其在生理pH和/或阳离子存在下自发组装以形成凝胶。在一个实施方案中，肽包含重复序列精氨酸 - 丙氨酸 - 天冬氨酸 - 丙氨酸（RADA）。本发明的方法包括阻塞受试者的肺部空气泄漏的方法，包括将本发明的化合物施用于肺部空气泄漏的部位。本发明的化合物和方法可以与可用于治疗癌症，炎症或感染的其它试剂组合。

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