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1. 发明授权

US09466477B2 Method of manufacturing semiconductor device, substrate processing apparatus, and semiconductor device 有权
标题翻译：制造半导体器件，衬底处理设备和半导体器件的方法
公开(公告)号：US09466477B2
公开(公告)日：2016-10-11
申请号：US12849398
申请日：2010-08-03
申请人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
发明人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
IPC分类号： H01L21/02 , C23C16/34 , C23C16/455 , C23C16/52 , H01L21/285
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45523 , C23C16/45544 , C23C16/45563 , C23C16/52 , H01L21/02104 , H01L21/02172 , H01L21/02225 , H01L21/02263 , H01L21/02271 , H01L21/28506
摘要： There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
摘要翻译：提供了制造半导体器件，衬底处理设备和半导体器件的方法。该方法允许快速形成导电膜，其由于其致密的结构而具有从源极渗透的低浓度的杂质和低电阻率。该方法通过同时将两种或更多种源提供到处理室中以在放置在处理室中的基板上形成膜来执行。该方法包括：以第一供应流量将至少一种源提供到处理室中来执行第一源供应过程; 以及通过以与第一供给流量不同的第二供给流量将至少一种源提供到处理室来执行第二源供给处理。

2. 发明授权

US09045825B2 Method of forming metal-containing film 有权
标题翻译：形成含金属膜的方法
公开(公告)号：US09045825B2
公开(公告)日：2015-06-02
申请号：US13398523
申请日：2012-02-16
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
IPC分类号： C23C16/34 , C23C16/40 , C23C16/455 , H01L21/02 , C23C16/30 , C23C16/54 , H01L21/285
CPC分类号： C23C16/45544 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45523 , C23C16/45527 , C23C16/45531 , C23C16/45561 , C23C16/45578 , C23C16/52 , C23C16/54 , H01L21/02172 , H01L21/0228 , H01L21/02697 , H01L21/28562
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate.
摘要翻译：提供了与现有技术相比能够增加要形成的膜的功函数的半导体器件制造方法和衬底处理装置。一种循环，包括（a）将含金属的气体供给到容纳基板的处理室中（b）向处理室供应含氮气体; 和（c）向处理室供给含氧气体，含卤素气体及其组合中的一种，进行多次以在基板上形成含金属膜。

3. 发明授权

US08691708B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08691708B2
公开(公告)日：2014-04-08
申请号：US13012320
申请日：2011-01-24
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
IPC分类号： H01L21/31
CPC分类号： H01L21/32051 , C23C16/34 , C23C16/45523 , C23C16/45574 , H01L21/28556 , H01L21/28562
摘要： A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film at a higher film-forming rate. The method includes loading a substrate into a processing chamber; simultaneously starting a supply of a first processing gas and a second processing gas to form a film on the substrate, simultaneously stopping the supply of the first and second processing gas; removing the remaining first and second processing gas from the processing chamber; supplying the second processing gas into the processing chamber without supplying the first processing gas; removing the second processing gas starting and then stopping a supply of the first processing gas into the processing chamber without supplying the second processing gas; removing the first processing gas; and unloading the substrate from the processing chamber.
摘要翻译：一种制造半导体器件的方法和能够以更高的成膜速度提供TiN膜的衬底处理设备。该方法包括将衬底加载到处理室中; 同时开始供应第一处理气体和第二处理气体以在基板上形成膜，同时停止供应第一和第二处理气体; 从处理室中除去剩余的第一和第二处理气体; 在不提供第一处理气体的情况下将第二处理气体供应到处理室中; 除去所述第二处理气体，然后停止将所述第一处理气体供给到所述处理室中，而不供给所述第二处理气体; 去除第一处理气体; 并从处理室卸载基板。

4. 发明授权

US09238257B2 Method of manufacturing semiconductor device, cleaning method, and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法，清洗方法以及基板处理装置
公开(公告)号：US09238257B2
公开(公告)日：2016-01-19
申请号：US12862180
申请日：2010-08-24
申请人： Masanori Sakai , Yukinao Kaga , Takashi Yokogawa , Tatsuyuki Saito
发明人： Masanori Sakai , Yukinao Kaga , Takashi Yokogawa , Tatsuyuki Saito
IPC分类号： H01L21/00 , B08B7/00 , H01L21/67 , C23C16/44 , H01L21/285
CPC分类号： B08B7/00 , C23C16/4404 , C23C16/4405 , H01L21/28562 , H01L21/67028
摘要： It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.
摘要翻译：可以有效地除去附着在处理室的内壁和设置在处理室中的基板支撑工具等部分的导电膜或绝缘膜等沉积材料。提供了制造半导体器件的方法。该方法包括：将基板装载到处理室中; 通过将多个源气体供应到所述处理室中，在所述基板上形成导电膜或绝缘膜; 从处理室卸载基板; 以及通过向所述处理室供应修饰气体来修饰粘附到所述处理室的导电膜或绝缘膜。在进行加载循环之后，多次进行成形，卸载和修改处理，通过将清洁气体供给到处理室中而将附着到处理室的改性导电膜或改性绝缘膜从处理室中除去处理室。

5. 发明授权

US08808455B2 Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08808455B2
公开(公告)日：2014-08-19
申请号：US13014419
申请日：2011-01-26
申请人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
发明人： Tatsuyuki Saito , Masanori Sakai , Yukinao Kaga , Takashi Yokogawa
IPC分类号： C23C16/455 , C23C16/52 , C23C16/00 , H01L21/00 , H01L21/02 , C23C16/30 , H01L23/482 , H01L21/3205
CPC分类号： C23C16/455 , C23C16/301 , C23C16/303 , C23C16/45578 , C23C16/52 , H01L21/00 , H01L21/02186 , H01L21/3205 , H01L23/482 , H01L2924/0002 , H01L2924/00
摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates.
摘要翻译：本发明提供一种能够形成导电膜的基板处理装置和半导体装置的制造方法，所述半导体装置在较高的成膜速率下能够形成致密的导电膜，其包含低浓度源源杂质并具有低电阻率。基板处理装置包括：处理室，被配置为堆叠并容纳多个基板; 第一处理气体供应系统，被配置为将第一处理气体供应到所述处理室中; 第二处理气体供应系统，被配置为将第二处理气体供应到所述处理室中; 以及控制单元，被配置为控制第一处理气体供应系统和第二处理气体供应系统。这里，第一处理气体供给系统和第二处理气体供给系统中的至少一个包括沿基板的堆叠方向垂直配置的两个喷嘴，并且具有不同的形状，并且控制单元被配置为提供至少一个当通过在具有不同成膜速率的脉冲下将第一处理气体和第二处理气体供应到处理室中时，通过具有不同形状的两个喷嘴将第一处理气体和第二处理气体输送到处理室中，。

6. 发明申请

US20120214300A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件制造方法和基板处理装置
公开(公告)号：US20120214300A1
公开(公告)日：2012-08-23
申请号：US13398523
申请日：2012-02-16
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai , Takashi Yokogawa
IPC分类号： H01L21/28
CPC分类号： C23C16/45544 , C23C16/308 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45523 , C23C16/45527 , C23C16/45531 , C23C16/45561 , C23C16/45578 , C23C16/52 , C23C16/54 , H01L21/02172 , H01L21/0228 , H01L21/02697 , H01L21/28562
摘要： Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate.
摘要翻译：提供了与现有技术相比能够增加要形成的膜的功函数的半导体器件制造方法和衬底处理装置。一种循环，包括（a）将含金属的气体供给到容纳基板的处理室中（b）向处理室供应含氮气体; 和（c）向处理室供给含氧气体，含卤素气体及其组合中的一种，进行多次以在基板上形成含金属膜。

7. 发明申请

US20100297846A1 Method of manufacturing a semiconductor device and substrate processing apparatus 审中-公开
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US20100297846A1
公开(公告)日：2010-11-25
申请号：US12801082
申请日：2010-05-20
申请人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai
发明人： Yukinao Kaga , Tatsuyuki Saito , Masanori Sakai
IPC分类号： H01L21/285 , C23C16/06 , C23C16/34
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/45527 , C23C16/45544 , H01L21/76841
摘要： A method of manufacturing a semiconductor device includes the steps of: forming a first metal film on the substrate placed in a processing chamber by alternately supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber more than once; forming a second metal film on the substrate by simultaneously supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber once so that the metal compound and the reactant gas are mixed with each other; and modifying at least one of the first metal film and the second metal film is modified using at least one of the reactant gas and an inert gas after at least one of the alternate supply process and the simultaneous supply process. It thus becomes possible to provide a dense, low-resistive metal film having a smooth film surface with a better quality in comparison with a titanium nitride film formed by the CVD method at a higher deposition rate, that is, at a higher productivity, in comparison with a titanium nitride film formed by the ALD method at a low temperature.
摘要翻译：一种制造半导体器件的方法包括以下步骤：通过交替地供给至少一种作为无机原料的金属化合物和具有反应性的反应物气体，在放置在处理室中的基板上形成第一金属膜金属化合物对处理室不止一次; 通过同时将至少一种作为无机原料的金属化合物和与金属化合物具有反应性的反应物气体同时供给到处理室，从而在基板上形成第二金属膜，使得金属化合物和反应气体相互混合; 并且在交替供给处理和同时供给处理中的至少一个之后，使用至少一种反应气体和惰性气体来修饰第一金属膜和第二金属膜中的至少一个。因此，与通过CVD法形成的氮化钛膜以更高的生产率，即更高的生产率相比，可以提供具有光滑膜表面的致密的低电阻金属膜，具有更好的质量与在低温下通过ALD法形成的氮化钛膜进行比较。

8. 发明授权

US08614147B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08614147B2
公开(公告)日：2013-12-24
申请号：US12801127
申请日：2010-05-24
申请人： Masanori Sakai , Tatsuyuki Saito
发明人： Masanori Sakai , Tatsuyuki Saito
IPC分类号： H01L21/443
CPC分类号： H01L21/28556 , C23C16/34 , C23C16/45525 , C23C16/45546 , C23C16/56 , H01L21/28562 , H01L21/76862
摘要： A TiN film is formed by a first step of forming a TiN intermediate film on a wafer by supplying TiCl4 and NH3 reacting with TiCl4 to the wafer and controlling a processing condition for causing a bonding branch that has not undergone a substitution reaction to remain at a predetermined concentration at a part of TiCl4 and a second step of substituting the bonding branch contained in the TiN intermediate film by supplying H2 to the wafer, the first step and the second step being performed in this order.
摘要翻译：通过向晶片供给TiCl4和NH3与TiCl4反应而形成TiN中间膜的第一步骤形成TiN膜，并且控制用于使没有经历取代反应的键合分支的处理条件保持在在TiCl4的一部分处的预定浓度，以及通过向晶片供给H2来代替包含在TiN中间膜中的结合分支的第二步骤，第一步骤和第二步骤依次进行。

9. 发明授权

US08901011B2 Substrate processing apparatus and semiconductor device producing method 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US08901011B2
公开(公告)日：2014-12-02
申请号：US13104626
申请日：2011-05-10
申请人： Masanori Sakai , Tomohiro Yoshimura
发明人： Masanori Sakai , Tomohiro Yoshimura
IPC分类号： H01L21/469 , C23C14/54 , C23C16/455 , C23C16/509 , H01L21/67 , C23C16/458 , C23C16/34
CPC分类号： H01L21/0228 , C23C16/345 , C23C16/45525 , C23C16/45544 , C23C16/45546 , C23C16/45563 , C23C16/4584 , C23C16/509 , C23C16/52 , H01L21/0217 , H01L21/67017 , H01L21/67109 , H01L21/67253
摘要： Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times.
摘要翻译：公开了一种基板处理装置，包括：处理基板的处理室; 用于旋转衬底的衬底旋转机构; 用于向基板供给气体的气体供给单元，至少两种气体A和B交替地供给多次以在基板上形成所需的膜; 以及控制器，用于控制衬底的旋转周期或气体供给周期，其被定义为当气体A被制造流动的时刻与下一次气体A流动的时刻之间的时间段，使得旋转周期并且至少在交替气体供给被执行预定次数时，气体供给周期不彼此同步。

10. 发明授权

US08366868B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08366868B2
公开(公告)日：2013-02-05
申请号：US13489018
申请日：2012-06-05
申请人： Kazuyuki Okuda , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Toru Kagaya , Masanori Sakai
IPC分类号： C23F1/00 , H01L21/306 , C23C16/52 , C23C16/06 , C23C16/22
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/4412 , H01L21/02057 , H01L21/67253
摘要： A substrate processing apparatus cleaning method that includes: containing a cleaning gas in a reaction tube without generating a gas flow of the cleaning gas in the reaction tube by supplying the cleaning gas into the reaction tube and by completely stopping exhaustion of the cleaning gas from the reaction tube or by exhausting the cleaning gas at an exhausting rate which substantially does not affect uniform diffusion of the cleaning gas in the reaction tube from at a point of time of a period from a predetermined point of time before the cleaning gas is supplied into the reaction tube to a point of time when several seconds are elapsed after starting of supply of the cleaning gas into the reaction tube; and thereafter exhausting the cleaning gas from the reaction tube.
摘要翻译：一种基板处理装置的清洗方法，其特征在于，包括：在反应管内容纳清洗气体，在反应管内不产生清洗气体的气流，将清洗气体供给反应管，反应管或通过以排气速率排出清洁气体，其排气速率基本上不影响清洁气体在反应管中的均匀扩散从在清洁气体被供给到预定时间之前的预定时间点的时间点反应管到开始向反应管供给清洁气体后经过几秒钟的时间点; 然后从反应管中排出清洗气体。

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