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1. 发明申请

US20060216925A1 Semiconductor integrated circuit device and a method of manufacturing the same 有权
公开(公告)号：US20060216925A1
公开(公告)日：2006-09-28
申请号：US11444316
申请日：2006-06-01
申请人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
发明人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
IPC分类号： H01L21/4763
CPC分类号： H01L21/2855 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.

2. 发明授权

US07569476B2 Semiconductor integrated circuit device and a method of manufacturing the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US07569476B2
公开(公告)日：2009-08-04
申请号：US11444316
申请日：2006-06-01
申请人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
发明人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
IPC分类号： H01L21/4763
CPC分类号： H01L21/2855 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.
摘要翻译：在制造半导体集成电路器件时，在形成于半导体衬底上的第一级互连件上的层间绝缘膜中形成互连沟槽和接触孔，在沟槽和接触孔内部形成阻挡膜，使其膜厚度从孔的底部的中心朝向接触孔底部的侧壁增加，在阻挡膜上形成铜膜，并且通过抛光形成第二级互连和连接器部分（插塞）通过CMP。以这种方式，通过连接器部分（插头）从第二级互连件流向第一级互连件的电流的几何最短路径与具有最低电阻的薄阻挡膜部分不一致，使得电流路径可以分散，并且电子的浓度不容易发生。

3. 发明授权

US07095120B2 Semiconductor integrated circuit device with a connective portion for multilevel interconnection 有权
标题翻译：具有用于多层互连的连接部分的半导体集成电路器件
公开(公告)号：US07095120B2
公开(公告)日：2006-08-22
申请号：US10263829
申请日：2002-10-04
申请人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
发明人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/2855 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.
摘要翻译：在制造半导体集成电路器件时，在形成于半导体衬底上的第一级互连件上的层间绝缘膜中形成互连沟槽和接触孔，在沟槽和接触孔内部形成阻挡膜，使其膜厚度从孔的底部的中心朝向接触孔底部的侧壁增加，在阻挡膜上形成铜膜，并且通过抛光形成第二级互连和连接器部分（插塞）通过CMP。以这种方式，通过连接器部分（插头）从第二级互连件流向第一级互连件的电流的几何最短路径与具有最低电阻的薄阻挡膜部分不一致，使得电流路径可以分散，并且电子的浓度不容易发生。

4. 发明授权

US07018919B2 Method of manufacturing a semiconductor integrated circuit device including a hole formed in an insulating film and a first conductive film formed over a bottom region and sidewalls of the hole 有权
标题翻译：一种制造半导体集成电路器件的方法，该半导体集成电路器件包括形成在绝缘膜中的孔和形成在该底部区域和该孔的侧壁上的第一导电膜
公开(公告)号：US07018919B2
公开(公告)日：2006-03-28
申请号：US10327024
申请日：2002-12-24
申请人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
发明人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
IPC分类号： H01L21/4763
CPC分类号： H01L21/2855 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.
摘要翻译：在制造半导体集成电路器件时，在形成于半导体衬底上的第一级互连件上的层间绝缘膜中形成互连沟槽和接触孔，在沟槽和接触孔内部形成阻挡膜，使其膜厚度从孔的底部的中心朝向接触孔底部的侧壁增加，在阻挡膜上形成铜膜，并且通过抛光形成第二级互连和连接器部分（插塞）通过CMP。以这种方式，通过连接器部分（插头）从第二级互连件流向第一级互连件的电流的几何最短路径与具有最低电阻的薄阻挡膜部分不一致，使得电流路径可以分散，并且电子的浓度不容易发生。

5. 发明授权

US07777346B2 Semiconductor integrated circuit device and a method of manufacturing the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US07777346B2
公开(公告)日：2010-08-17
申请号：US12345917
申请日：2008-12-30
申请人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
发明人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/2855 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.
摘要翻译：在制造半导体集成电路器件时，在形成于半导体衬底上的第一级互连件上的层间绝缘膜中形成互连沟槽和接触孔，在沟槽和接触孔内部形成阻挡膜，使其膜厚度从孔的底部的中心朝向接触孔底部的侧壁增加，在阻挡膜上形成铜膜，并且通过抛光形成第二级互连和连接器部分（插塞）通过CMP。以这种方式，通过连接器部分（插头）从第二级互连件流向第一级互连件的电流的几何最短路径与具有最低电阻的薄阻挡膜部分不一致，使得电流路径可以分散，并且电子的浓度不容易发生。

6. 发明申请

US20090115063A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体集成电路装置及其制造方法
公开(公告)号：US20090115063A1
公开(公告)日：2009-05-07
申请号：US12345917
申请日：2008-12-30
申请人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
发明人： Kensuke Ishikawa , Tatsuyuki Saito , Masanori Miyauchi , Toshio Saito , Hiroshi Ashihara
IPC分类号： H01L23/52
CPC分类号： H01L21/2855 , H01L21/76807 , H01L21/76838 , H01L21/76843 , H01L21/76864 , H01L21/76873 , H01L23/5226 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In manufacturing a semiconductor integrated circuit device, an interconnect trench and a contact hole are formed in an interlayer insulating film formed over a first-level interconnect on a semiconductor substrate, a barrier film is formed inside of the trench and contact hole so that its film thickness increases from the center of the bottom of the hole toward the sidewalls all around the bottom of the contact hole, a copper film is formed over the barrier film, and a second-level interconnect and a connector portion (plug) are formed by polishing by CMP. In this way, the geometrically shortest pathway of an electrical current flowing from the second-level interconnect toward the first-level interconnect through a connector portion (plug) does not coincide with a thin barrier film portion which has the lowest electrical resistance, so that the current pathway can be dispersed and a concentration of electrons does not occur readily.
摘要翻译：在制造半导体集成电路器件时，在形成于半导体衬底上的第一级互连件上的层间绝缘膜中形成互连沟槽和接触孔，在沟槽和接触孔内部形成阻挡膜，使其膜厚度从孔的底部的中心朝向接触孔底部的侧壁增加，在阻挡膜上形成铜膜，并且通过抛光形成第二级互连和连接器部分（插塞）通过CMP。以这种方式，通过连接器部分（插头）从第二级互连件流向第一级互连件的电流的几何最短路径与具有最低电阻的薄阻挡膜部分不一致，使得电流路径可以分散，并且电子的浓度不容易发生。

7. 发明授权

US07423822B2 Lens barrel and optical apparatus 失效
标题翻译：镜筒和光学装置
公开(公告)号：US07423822B2
公开(公告)日：2008-09-09
申请号：US11715913
申请日：2007-03-09
申请人： Masanori Miyauchi , Yasuhide Takahashi
发明人： Masanori Miyauchi , Yasuhide Takahashi
IPC分类号： G02B7/02
CPC分类号： G02B7/10 , G02B7/102
摘要： The present invention is directed to a lens barrel that is simplified in structure with the reduced number of components and is facilitated in assembly and associated adjustment. The lens barrel enables an appropriate frictional force against the rotation force caused by manipulating rotary operation rings such as a zooming ring and a focusing ring to effect the optimum operating force on the rotary operation rings. In the lens barrel where a fixed barrel has its inner and outer circumferential surfaces provided with at least two slidable-rotatable members that are rotatably held about the optical axis but unable to move along the optical axis, an annular member is secured to the fixed barrel between the slidable-rotatable members, the annular member being pivotal about the optical axis and being provided with resilient protrusions on the opposite major surfaces toward the subject and the image field; and the resilient protrusions are pressed against a rear end face of one of the slidable-rotatable members closer to the subject and against a fore end face of the other slidable-rotatable member closer to the image field.
摘要翻译：本发明涉及一种透镜镜筒，其结构简化，部件数量减少，并且易于组装和相关调整。透镜筒能够抵抗由操纵旋转操作环（例如变焦环和聚焦环）引起的旋转力的适当摩擦力，以实现旋转操作环上的最佳操作力。在透镜筒中，固定筒的内周面和外圆周表面设置有至少两个可旋转地保持在光轴上但不能沿光轴移动的可滑动旋转构件，环形构件固定到固定筒在所述可滑动旋转构件之间，所述环形构件绕所述光轴枢转并且在朝向所述被摄体和所述图像场的相对主表面上设置有弹性突起; 并且弹性突起压靠在靠近被摄体的一个可滑动旋转部件的后端面上，并抵靠靠近图像场的另一个可滑动旋转部件的前端面。

8. 发明申请

US20120028937A1 CYCLIC AMINE-1-CARBOXYLIC ACID ESTER DERIVATIVE AND PHARMACEUTICAL COMPOSITION CONTAINING THE SAME 有权
标题翻译：环己基氨基-1-羧酸酯衍生物和含有其的药物组合物
公开(公告)号：US20120028937A1
公开(公告)日：2012-02-02
申请号：US12991224
申请日：2009-05-07
申请人： Yasunori Tsuzuki , Toshiya Morie , Takanori Nakamura , Isao Shimizu , Masanori Miyauchi
发明人： Yasunori Tsuzuki , Toshiya Morie , Takanori Nakamura , Isao Shimizu , Masanori Miyauchi
IPC分类号： A61K31/56 , C07D205/04 , C07D207/16 , A61K31/445 , A61K31/397 , A61P25/22 , A61P29/00 , A61P25/08 , A61P25/24 , A61P23/00 , A61P9/06 , A61P23/02 , C07D211/62 , A61K31/40
CPC分类号： C07D205/04
摘要： Provided is a compound useful as a therapeutic drug for pain and inflammation caused by various pathological conditions such as neuropathic pain and rheumatoid arthritis. The compound of the formula (I) or a salt thereof [wherein R1 is a methyl group or a hydrogen atom, R2 represents a hydrogen atom, an alkyl group, an alkylcarbonyl group or an aryl carbonyl group, A represents a cycloalkyl group, a cycloalkenyl group, an aryl group or a heteroaryl group (each group may be substituted with a substituent selected from the group consisting of alkyl, alkenyl, cycloalkyl and halogen), n and m each represent an integer of 1, 2 or 3, and p represents an integer of 0, 1, 2 or 3].
摘要翻译：提供作为用于由各种病理状况如神经性疼痛和类风湿性关节炎引起的疼痛和炎症的治疗药物的化合物。式（I）化合物或其盐[其中R 1是甲基或氢原子，R 2表示氢原子，烷基，烷基羰基或芳基羰基，A表示环烷基，环烯基，芳基或杂芳基（各基团可以被选自烷基，烯基，环烷基和卤素的取代基取代），n和m各自表示1,2或3的整数，p 表示0,1,2或3的整数]。

9. 发明申请

US20070217036A1 Lens barrel and optical apparatus 失效
标题翻译：镜筒和光学装置
公开(公告)号：US20070217036A1
公开(公告)日：2007-09-20
申请号：US11715913
申请日：2007-03-09
申请人： Masanori Miyauchi , Yasuhide Takahashi
发明人： Masanori Miyauchi , Yasuhide Takahashi
IPC分类号： G02B7/02
CPC分类号： G02B7/10 , G02B7/102
摘要： The present invention is directed to a lens barrel that is simplified in structure with the reduced number of components and is facilitated in assembly and associated adjustment. The lens barrel enables an appropriate frictional force against the rotation force caused by manipulating rotary operation rings such as a zooming ring and a focusing ring to effect the optimum operating force on the rotary operation rings. In the lens barrel where a fixed barrel has its inner and outer circumferential surfaces provided with at least two slidable-rotatable members that are rotatably held about the optical axis but unable to move along the optical axis, an annular member is secured to the fixed barrel between the slidable-rotatable members, the annular member being pivotal about the optical axis and being provided with resilient protrusions on the opposite major surfaces toward the subject and the image field; and the resilient protrusions are pressed against a rear end face of one of the slidable-rotatable members closer to the subject and against a fore end face of the other slidable-rotatable member closer to the image field.
摘要翻译：本发明涉及一种透镜镜筒，其结构简化，部件数量减少，并且易于组装和相关调整。透镜筒能够抵抗由操纵旋转操作环（例如变焦环和聚焦环）引起的旋转力的适当摩擦力，以实现旋转操作环上的最佳操作力。在透镜筒中，固定筒的内周面和外圆周表面设置有至少两个可旋转地保持在光轴上但不能沿光轴移动的可滑动旋转构件，环形构件固定到固定筒在所述可滑动旋转构件之间，所述环形构件绕所述光轴枢转并且在朝向所述被摄体和所述图像场的相对主表面上设置有弹性突起; 并且弹性突起压靠在靠近被摄体的一个可滑动旋转部件的后端面上，并抵靠靠近图像场的另一个可滑动旋转部件的前端面。

10. 发明授权

US08367835B2 Cyclic amine-1-carboxylic acid ester derivative and pharmaceutical composition containing the same 有权
标题翻译：环状胺-1-羧酸酯衍生物和含有它的药物组合物
公开(公告)号：US08367835B2
公开(公告)日：2013-02-05
申请号：US12991224
申请日：2009-05-07
申请人： Yasunori Tsuzuki , Toshiya Morie , Takanori Nakamura , Isao Shimizu , Masanori Miyauchi
发明人： Yasunori Tsuzuki , Toshiya Morie , Takanori Nakamura , Isao Shimizu , Masanori Miyauchi
IPC分类号： A61K31/445 , C07D211/26
CPC分类号： C07D205/04
摘要： Provided is a compound useful as a therapeutic drug for pain and inflammation caused by various pathological conditions such as neuropathic pain and rheumatoid arthritis. The compound of the formula (I) or a salt thereof [wherein R1 is a methyl group or a hydrogen atom, R2 represents a hydrogen atom, an alkyl group, an alkylcarbonyl group or an aryl carbonyl group, A represents a cycloalkyl group, a cycloalkenyl group, an aryl group or a heteroaryl group (each group may be substituted with a substituent selected from the group consisting of alkyl, alkenyl, cycloalkyl and halogen), n and m each represent an integer of 1, 2 or 3, and p represents an integer of 0, 1, 2 or 3].
摘要翻译：提供作为用于由各种病理状况如神经性疼痛和类风湿性关节炎引起的疼痛和炎症的治疗药物的化合物。式（I）化合物或其盐[其中R 1是甲基或氢原子，R 2表示氢原子，烷基，烷基羰基或芳基羰基，A表示环烷基，环烯基，芳基或杂芳基（各基团可以被选自烷基，烯基，环烷基和卤素的取代基取代），n和m各自表示1,2或3的整数，p 表示0,1,2或3的整数]。

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