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51. 发明授权

US6025607A Thin-film transistor and liquid crystal display device 失效
标题翻译：薄膜晶体管和液晶显示装置
公开(公告)号：US6025607A
公开(公告)日：2000-02-15
申请号：US842301
申请日：1997-05-05
申请人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Yuugo Goto
发明人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Yuugo Goto
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/266 , H01L21/336 , H01L29/786 , H01L31/0392
CPC分类号： H01L29/66757
摘要： A polysilicon pattern constituting an active portion of a TFT is formed on a substrate so as to be curved to generally assume a U shape, and a gate pattern is formed as a straight conductor pattern. The gate pattern is so disposed as to cross the U-shaped polysilicon pattern plural times. The silicon pattern comprise a plurality of channel regions and impurity regions of which alignment is symmetrical.
摘要翻译：构成TFT的有源部分的多晶硅图案形成在基板上，以弯曲成大致呈U字状，并且栅极图案形成为直导体图案。栅极图案被设置成多次跨越U形多晶硅图案。硅图案包括多个通道区域和其对准的对称的杂质区域。

52. 发明授权

US08779478B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08779478B2
公开(公告)日：2014-07-15
申请号：US13701028
申请日：2011-05-23
申请人： Masao Moriguchi , Michiko Takei , Yohsuke Kanzaki , Tsuyoshi Inoue , Tetsuo Fukaya , Yudai Takanishi , Takatsugu Kusumi , Yoshiki Nakatani , Tetsuya Okamoto , Kenji Nakanishi
发明人： Masao Moriguchi , Michiko Takei , Yohsuke Kanzaki , Tsuyoshi Inoue , Tetsuo Fukaya , Yudai Takanishi , Takatsugu Kusumi , Yoshiki Nakatani , Tetsuya Okamoto , Kenji Nakanishi
IPC分类号： H01L29/76 , H01L29/66 , H01L29/786 , H01L29/24
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78696
摘要： A TFT 20 includes a gate electrode 21, a gate insulating film 22, a semiconductor layer 23, a source electrode 24, a drain electrode 25, etc. The semiconductor layer 23 is comprised of a metal oxide semiconductor (IGZO), and has a source portion 23a that contacts the source electrode 24, a drain electrode 23b that contacts the drain electrode 25, and a channel portion 23c that is located between the source and drain portions 23a, 23b. A reduced region 30 is formed at least in the channel portion 23c of the semiconductor layer 23, and the reduced region 30 has a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer 23.
摘要翻译： TFT20包括栅极电极21，栅极绝缘膜22，半导体层23，源极24，漏极电极25等。半导体层23由金属氧化物半导体（IGZO）构成，具有与源电极24接触的源部23a，与漏电极25接触的漏电极23b和位于源极部23a，第二漏极23b之间的沟道部23c。还原区域30至少形成在半导体层23的沟道部分23c中，并且还原区域30具有比半导体层23的其余部分中诸如In的金属的单质更高的含量。

53. 发明申请

US20130175521A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20130175521A1
公开(公告)日：2013-07-11
申请号：US13701028
申请日：2011-05-23
申请人： Masao Moriguchi , Michiko Takei , Yohsuke Kanzaki , Tsuyoshi Inoue , Tetsuo Fukaya , Yudai Takanishi , Takatsugu Kusumi , Yoshiki Nakatani , Tetsuya Okamoto , Kenji Nakanishi
发明人： Masao Moriguchi , Michiko Takei , Yohsuke Kanzaki , Tsuyoshi Inoue , Tetsuo Fukaya , Yudai Takanishi , Takatsugu Kusumi , Yoshiki Nakatani , Tetsuya Okamoto , Kenji Nakanishi
IPC分类号： H01L29/786 , H01L29/24
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78696
摘要： A TFT 20 includes a gate electrode 21, a gate insulating film 22, a semiconductor layer 23, a source electrode 24, a drain electrode 25, etc. The semiconductor layer 23 is comprised of a metal oxide semiconductor (IGZO), and has a source portion 23a that contacts the source electrode 24, a drain electrode 23b that contacts the drain electrode 25, and a channel portion 23c that is located between the source and drain portions 23a, 23b. A reduced region 30 is formed at least in the channel portion 23c of the semiconductor layer 23, and the reduced region 30 has a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer 23.
摘要翻译： TFT20包括栅极电极21，栅极绝缘膜22，半导体层23，源极24，漏极电极25等。半导体层23由金属氧化物半导体（IGZO）构成，具有与源电极24接触的源部23a，与漏电极25接触的漏电极23b和位于源极部23a，第二漏极23b之间的沟道部23c。还原区域30至少形成在半导体层23的沟道部分23c中，并且还原区域30具有比半导体层23的其余部分中诸如In的金属的单质更高的含量。

54. 发明授权

US08207046B2 Method for producing semiconductor device and semiconductor device produced by same method 有权
标题翻译：通过相同方法制造半导体器件和半导体器件的方法
公开(公告)号：US08207046B2
公开(公告)日：2012-06-26
申请号：US12682221
申请日：2008-10-21
申请人： Michiko Takei , Shin Matsumoto , Yasumori Fukushima , Yutaka Takafuji
发明人： Michiko Takei , Shin Matsumoto , Yasumori Fukushima , Yutaka Takafuji
IPC分类号： H01L21/02
CPC分类号： H01L27/1266 , H01L21/76254 , H01L27/1214 , H01L29/66772
摘要： To prevent bubbles from occurring along a transfer interface, the present method includes the steps of: forming a peeled layer 10 in a transferred member 6 by implanting a peeled-layer forming substance into the transferred member 6; forming a planar surface in the transferred member 6 by planarizing a surface of the transferred member 6; forming a composite including the transferred member 6 and a glass substrate 2 by directly combining the transferred member 6 via the planar surface with a surface of the glass substrate 2; and peeling a part of the transferred member 6 from the composite along the peeled layer 10 serving as an interface by heat-treating the composite.
摘要翻译：为了防止沿着转移界面发生气泡，本方法包括以下步骤：通过将剥离层形成物质注入到被转印元件6中，在转印元件6中形成剥离层10; 通过使转印部件6的表面平坦化，在被转印部件6中形成平面; 通过经由平面表面直接将转印部件6与玻璃基板2的表面直接组合，形成包括转印部件6和玻璃基板2的复合体; 以及通过热处理复合材料，沿着作为界面的剥离层10将复合材料的一部分从复合材料剥离。

55. 发明申请

US20110272694A1 INSULATING SUBSTRATE FOR SEMICONDUCTOR APPARATUS, SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS 有权
标题翻译：用于半导体装置的绝缘基板，半导体装置和制造半导体装置的方法
公开(公告)号：US20110272694A1
公开(公告)日：2011-11-10
申请号：US12674560
申请日：2008-09-08
申请人： Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
发明人： Michiko Takei , Shin Matsumoto , Kazuhide Tomiyasu , Yasumori Fukushima , Yutaka Takafuji
IPC分类号： H01L29/24 , H01L21/762 , B32B3/00 , H01L29/04
CPC分类号： H01L27/1266 , H01L21/02076 , H01L21/76254 , H01L27/1214 , H01L29/78603 , Y10T428/24355
摘要： The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.
摘要翻译：本发明旨在提供一种由绝缘材料制成的玻璃基板（20），其可以通过将单晶硅膜（50）或包括半导体器件的基板转移到表面上而构成半导体装置（10） 24），作为表面（24）的一部分的转印面（26），能够设置在转印面（26）上的单晶硅膜（50），转印面（26）具有算术平均粗糙度不大于0.4nm。

56. 发明授权

US08008205B2 Methods for producing a semiconductor device having planarization films 有权
标题翻译：具有平坦化膜的半导体器件的制造方法
公开(公告)号：US08008205B2
公开(公告)日：2011-08-30
申请号：US12159582
申请日：2006-10-13
申请人： Yasumori Fukushima , Yutaka Takafuji , Michiko Takei , Kazuhide Tomiyasu
发明人： Yasumori Fukushima , Yutaka Takafuji , Michiko Takei , Kazuhide Tomiyasu
IPC分类号： H01L21/311
CPC分类号： H01L21/84 , H01L21/26506 , H01L21/76254 , H01L21/823475 , H01L21/823481 , H01L27/12 , H01L29/6659 , H01L29/7833
摘要： A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer.
摘要翻译：本发明的方法包括：第一平坦化膜形成步骤，在第二区域的平坦部分的至少一部分中形成具有均匀厚度的第一平坦化膜; 第二平坦化膜形成步骤，在所述第一平坦化膜之间形成与所述第一平坦化膜的表面共面的第二平坦化膜; 剥离层形成步骤，通过经由第一平坦化膜或第二平坦化膜将剥离材料离子注入基底层来形成剥离层; 以及分离步骤，用于沿着剥离层分离基底层的一部分。

57. 发明申请

US20110175917A1 MOBILE DISPLAY DEVICE AND CONTROL METHOD IN MOBILE DISPLAY DEVICE 有权
标题翻译：移动显示设备中的移动显示设备和控制方法
公开(公告)号：US20110175917A1
公开(公告)日：2011-07-21
申请号：US12741022
申请日：2008-10-30
申请人： Natsuhito Honda , Hiroshi Tsuruta , Tomoyuki Urano , Michiko Takei
发明人： Natsuhito Honda , Hiroshi Tsuruta , Tomoyuki Urano , Michiko Takei
IPC分类号： G06T11/00
CPC分类号： G06F3/018 , G06F17/276
摘要： It is possible to provide a mobile display device which can improve usability even when the character size is increased for improving visibility. A method for controlling the mobile display device is also disclosed. A control unit (18) can set a conversion candidate of an input character displayed on a second display region (conversion candidate character display region (162)) of a display unit (16) to a first display mode (normal mode) for displaying the conversion candidate in a first character size and to a second display mode (enlarged mode) for displaying the conversion candidate in a second character size greater than the first character size while differentiating a display priority of a plurality of conversion candidates to be displayed in the second display region in the first display mode and a display priority of a plurality of conversion candidates to be displayed in the second display region in the second display mode.
摘要翻译：即使提高字符尺寸以提高可视性，也可以提供一种能够提高可用性的移动显示装置。还公开了一种用于控制移动显示装置的方法。控制单元（18）可以将显示单元（16）的第二显示区域（转换候选字符显示区域（162））上显示的输入字符的转换候选设置为显示第一显示模式（正常模式）以及第二显示模式（放大模式），用于在第二字符尺寸大于第一字符尺寸的情况下显示转换候选，同时对要在第二字符尺寸中显示的多个转换候选的显示优先级进行微分显示区域和第二显示模式中显示在第二显示区域中的多个转换候选者的显示优先级。

58. 发明授权

US06884666B2 Thin film transistor, liquid crystal display substrate, and their manufacture methods 有权
标题翻译：薄膜晶体管，液晶显示基板及其制造方法
公开(公告)号：US06884666B2
公开(公告)日：2005-04-26
申请号：US10624074
申请日：2003-07-21
申请人： Michiko Takei , Yasuyoshi Mishima , Mitsuru Chida , Kohta Yoshikawa
发明人： Michiko Takei , Yasuyoshi Mishima , Mitsuru Chida , Kohta Yoshikawa
IPC分类号： G02F1/136 , G02F1/1345 , G02F1/1368 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/8234 , H01L21/84 , H01L23/522 , H01L27/08 , H01L27/088 , H01L27/12 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78 , H01L29/786 , H01L21/00
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/66757 , H01L29/78621 , H01L29/78624 , H01L29/78645
摘要： A current path pattern of semiconductor material is formed on the insulating principal surface of a substrate. A gate pattern three-dimensionally crosses the current path pattern in first and second cross areas. A channel region of the current path pattern is defined in an area superposed upon by the gate pattern. A gate insulating film is disposed between the current path pattern and gate pattern. The current path pattern has a lightly doped drain structure on both sides of the channel region in the first cross area, and is not provided with the lightly doped drain structure in regions in contact with the channel region in the second cross area. TFTs are provided having a small off-current and being not necessary for high precision position alignment during manufacture processes even if a gate length is short.
摘要翻译：半导体材料的电流路径图案形成在基板的绝缘主表面上。栅极图案在第一和第二交叉区域中三维地穿过当前路径图案。当前路径图案的通道区域被限定在由栅极图案叠加的区域中。栅极绝缘膜设置在电流路径图案和栅极图案之间。电流路径图案在第一交叉区域中的沟道区域的两侧上具有轻掺杂的漏极结构，并且在与第二十字区域中的沟道区域接触的区域中不设置轻掺杂漏极结构。提供具有小的截止电流的TFT，并且即使栅极长度短，也不需要在制造过程中的高精度位置对准。

59. 发明授权

US06198517B1 Liquid crystal display device 有权
公开(公告)号：US06198517B1
公开(公告)日：2001-03-06
申请号：US09323559
申请日：1999-06-01
申请人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Hideomi Suzawa , Naoaki Yamaguchi
发明人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Hideomi Suzawa , Naoaki Yamaguchi
IPC分类号： G02F1136
CPC分类号： G02F1/136209
摘要： An active type liquid crystal display device, comprising an electrode being formed by using a transparent electrically conductive film constituting a pixel electrode, which allows the black matrix to be set as the common potential. Also claimed is an active type liquid crystal display device of the same type as above, comprising an electrode being formed on the same layer as that of the source line, which allows the black matrix to be set as the common potential.

60. 发明授权

US5929948A Black matrix coupled to common electrode through a transparent conductive film 失效
标题翻译：黑色矩阵通过透明导电膜耦合到公共电极
公开(公告)号：US5929948A
公开(公告)日：1999-07-27
申请号：US808949
申请日：1997-02-19
申请人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Hideomi Suzawa , Naoaki Yamaguchi
发明人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Hideomi Suzawa , Naoaki Yamaguchi
IPC分类号： G02F1/1335 , G02F1/1343 , G02F1/1362 , G02F1/136 , G02F1/1333 , G02F1/1345
CPC分类号： G02F1/136209
摘要： An active matrix liquid crystal display comprising a common electrode (#217), connected to a conductive black matrix (#302 and #303) through a coupling electrode (#227), which allows the black matrix to be set at the common potential. The common electrode is formed on the same layer as that of the source lines and data lines. The pixel electrode (#228) and the coupling electrode (#227) are comprised of the same transparent electrically conductive material.
摘要翻译：一种有源矩阵液晶显示器，包括通过耦合电极（＃227）连接到导电黑矩阵（＃302和＃303）的公共电极（＃217），其允许将黑矩阵设置在公共电位。公共电极形成在与源极线和数据线的层相同的层上。像素电极（＃228）和耦合电极（＃227）由相同的透明导电材料构成。

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