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1. 发明申请

US20140103342A1 TFT SUBSTRATE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US20140103342A1
公开(公告)日：2014-04-17
申请号：US14124178
申请日：2012-05-29
申请人： Yudai Takanishi , Masao Moriguchi , Yohsuke Kanzaki , Takatsugu Kusumi
发明人： Yudai Takanishi , Masao Moriguchi , Yohsuke Kanzaki , Takatsugu Kusumi
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78606 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A method of manufacturing a TFT substrate includes: forming a gate electrode (12) and a gate insulating film (30) on a substrate (8); forming a source electrode (14) and a drain electrode (15) at a gap from each other on the gate insulating film (30), and forming a drain connection part (16); forming, after the step of forming the source electrode and the drain electrode, an oxide semiconductor layer (18, 18a, 18b) that contains a channel portion connecting the source electrode (14) to the drain electrode (15) and that contains an additional portion (18a) covering the drain connection part (16); oxidizing a surface of the oxide semiconductor layer (18, 18a, 18b); forming a contact hole (22) in an insulating film (32) that covers the oxide semiconductor layer; removing a portion of the additional portion (18a) of the oxide semiconductor layer that is located inside the contact hole (22); and forming a conductive layer (20) that electrically connects the drain connection part (16) that has been exposed.
摘要翻译：制造TFT基板的方法包括：在基板（8）上形成栅极（12）和栅极绝缘膜（30）; 在所述栅极绝缘膜（30）上形成彼此间隔开的源极（14）和漏极（15），形成漏极连接部（16）。在形成所述源电极和所述漏电极的步骤之后，形成包含将所述源电极（14）连接到所述漏电极（15）的沟道部分的氧化物半导体层（18,18a，18b），所述沟道部分包含附加（18a）覆盖所述排水连接部（16）。氧化氧化物半导体层（18,18a，18b）的表面; 在覆盖氧化物半导体层的绝缘膜（32）中形成接触孔（22）; 去除位于接触孔（22）内的氧化物半导体层的附加部分（18a）的一部分; 以及形成电连接已经暴露的漏极连接部分（16）的导电层（20）。

2. 发明授权

US09377644B2 Display device 有权
标题翻译：显示设备
公开(公告)号：US09377644B2
公开(公告)日：2016-06-28
申请号：US14006479
申请日：2012-03-16
申请人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi
发明人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi
IPC分类号： G02F1/1333 , G02F1/1339 , G02F1/1362 , H01L29/786 , G02F1/1345 , G02F1/1368 , G02F1/1343 , H01L27/12
CPC分类号： G02F1/133345 , G02F1/1339 , G02F1/1345 , G02F1/136277 , G02F1/1368 , G02F2001/133311 , G02F2001/133357 , G02F2001/134372 , G02F2201/501 , H01L27/1248 , H01L29/78606 , H01L29/78636
摘要： A TFT 1 is formed on a glass substrate 11, and a flattening resin film 17 covering the TFT 1 is formed. Furthermore, a moisture-proof protective film 18 covering the entire surface of the flattening resin film 17 is formed. For the protective film 18, a SiO2 film, a SiN film, a SiON film, or a stacked film thereof is used. The edge surfaces of the flattening resin film 17 are disposed on the inner side of or under a seal 4, and are formed in a tapered shape. By this, the entry of moisture into the flattening resin film 17 is prevented, preventing display degradation. This effect becomes noticeable in a display device including an oxide semiconductor TFT.
摘要翻译：在玻璃基板11上形成TFT1，形成覆盖TFT1的平坦化树脂膜17。此外，形成覆盖平坦化树脂膜17的整个表面的防湿保护膜18。对于保护膜18，使用SiO 2膜，SiN膜，SiON膜或其叠层膜。平坦化树脂膜17的边缘表面设置在密封件4的内侧或下方，并且形成为锥形。由此，防止水分进入平坦化树脂膜17，防止显示劣化。在包括氧化物半导体TFT的显示装置中，这种效果变得显着。

3. 发明授权

US09190526B2 Thin film transistor, display panel, and method for fabricating thin film transistor 有权
标题翻译：薄膜晶体管，显示面板和制造薄膜晶体管的方法
公开(公告)号：US09190526B2
公开(公告)日：2015-11-17
申请号：US14111887
申请日：2012-04-12
申请人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi
发明人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi
IPC分类号： H01L29/10 , H01L29/12 , H01L21/00 , H01L51/40 , H01L29/786 , G02F1/1368 , H01L29/66 , H01L27/12
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L29/6675
摘要： A thin film transistor includes a gate electrode (11a), a gate insulating film (12a) covering the gate electrode (11a), a semiconductor layer (13a) made of an oxide semiconductor and provided on the gate insulating film (12a), a source electrode (16aa) and a drain electrode (16ab) provided on the semiconductor layer (13a) via easily reducible metal layers (15aa, 15ab) and spaced apart from each other, with a channel region (C) interposed therebetween, a conductive region (E) provided in the semiconductor layer (13a), and a diffusion reducing portion (13ca, 13cb) provided in the semiconductor layer (13a), for reducing diffusion of the conductive region (E) into the channel region (C).
摘要翻译：薄膜晶体管包括栅电极（11a），覆盖栅极（11a）的栅极绝缘膜（12a），由栅极绝缘膜（12a）设置的由氧化物半导体构成的半导体层（13a），源极电极（16aa）和漏极电极（16ab），其经由易于还原的金属层（15aa，15ab）设置在半导体层（13a）上并且彼此间隔开，并且沟道区域（C）彼此间隔开，导电区域（13a），以及设置在半导体层（13a）中的扩散减少部分（13ca，13cb），用于减少导电区域（E）扩散到沟道区域（C）中。

4. 发明授权

US08900914B2 TFT substrate and method for manufacturing same 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US08900914B2
公开(公告)日：2014-12-02
申请号：US14124178
申请日：2012-05-29
申请人： Yudai Takanishi , Masao Moriguchi , Yohsuke Kanzaki , Takatsugu Kusumi
发明人： Yudai Takanishi , Masao Moriguchi , Yohsuke Kanzaki , Takatsugu Kusumi
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12 , H01L29/66
CPC分类号： H01L29/78606 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： A method of manufacturing a TFT substrate includes: forming a gate electrode (12) and a gate insulating film (30) on a substrate (8); forming a source electrode (14) and a drain electrode (15) at a gap from each other on the gate insulating film (30), and forming a drain connection part (16); forming, after the step of forming the source electrode and the drain electrode, an oxide semiconductor layer (18, 18a, 18b) that contains a channel portion connecting the source electrode (14) to the drain electrode (15) and that contains an additional portion (18a) covering the drain connection part (16); oxidizing a surface of the oxide semiconductor layer (18, 18a, 18b); forming a contact hole (22) in an insulating film (32) that covers the oxide semiconductor layer; removing a portion of the additional portion (18a) of the oxide semiconductor layer that is located inside the contact hole (22); and forming a conductive layer (20) that electrically connects the drain connection part (16) that has been exposed.
摘要翻译：制造TFT基板的方法包括：在基板（8）上形成栅极（12）和栅极绝缘膜（30）; 在所述栅极绝缘膜（30）上形成彼此间隔开的源极（14）和漏极（15），形成漏极连接部（16）。在形成所述源电极和所述漏电极的步骤之后，形成包含将所述源电极（14）连接到所述漏电极（15）的沟道部分的氧化物半导体层（18,18a，18b），所述沟道部分包含附加（18a）覆盖所述排水连接部（16）。氧化氧化物半导体层（18,18a，18b）的表面; 在覆盖氧化物半导体层的绝缘膜（32）中形成接触孔（22）; 去除位于接触孔（22）内的氧化物半导体层的附加部分（18a）的一部分; 以及形成电连接已经暴露的漏极连接部分（16）的导电层（20）。

5. 发明申请

US20140110249A1 SPUTTERING TARGET, METHOD FOR MANUFACTURING SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 审中-公开
标题翻译：溅射靶，其制造方法和制造薄膜晶体管的方法
公开(公告)号：US20140110249A1
公开(公告)日：2014-04-24
申请号：US14002674
申请日：2012-02-24
申请人： Yohsuke Kanzaki , Takatsugu Kusumi , Naohiro Tamari , Masao Moriguchi
发明人： Yohsuke Kanzaki , Takatsugu Kusumi , Naohiro Tamari , Masao Moriguchi
IPC分类号： C23C14/34 , H01L21/203
CPC分类号： C23C14/3407 , H01J37/3417 , H01J37/3429 , H01J37/3435 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/203 , H01L29/7869 , Y10T29/49826
摘要： The purpose of the present invention is to provide a sputtering target with which a film having excellent characteristics can be obtained. A sputtering target (100) is constituted of a plurality of target members (10), a backing plate (20), a bonding agent (30), and protective members (50). The plurality of target members (10) and the backing plate (20) are bonded to each other with the bonding agent (30) therebetween. On a backing plate (20) surface that corresponds in position to gaps (15) between adjacent target members (10), grooves (40) are formed. Each of the grooves (40) is provided with the protective members (50), which are composed of the same material as that of the target members (10). The width (W2) of the protective members (50) is greater than the width (W1) of the gaps (15), and is less than the width (W3) of the grooves (40). The thickness (T4) of the protective members (50) is larger than the depth (D1) of the grooves (40).
摘要翻译：本发明的目的是提供一种能够获得具有优异特性的膜的溅射靶。溅射靶（100）由多个靶构件（10），背板（20），粘合剂（30）和保护构件（50）构成。多个目标构件（10）和背板（20）之间用粘合剂（30）彼此结合。在与相邻目标构件（10）之间的间隙（15）对应的背板（20）表面上形成有凹槽（40）。每个凹槽（40）设置有与目标构件（10）相同的材料构成的保护构件（50）。保护构件（50）的宽度（W2）大于间隙（15）的宽度（W1），并且小于槽（40）的宽度（W3）。保护部件（50）的厚度（T4）大于槽（40）的深度（D1）。

6. 发明申请

US20140034947A1 THIN FILM TRANSISTOR, DISPLAY PANEL, AND METHOD FOR FABRICATING THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，显示面板以及制造薄膜晶体管的方法
公开(公告)号：US20140034947A1
公开(公告)日：2014-02-06
申请号：US14111887
申请日：2012-04-12
申请人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi
发明人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L29/6675
摘要： A thin film transistor includes a gate electrode (11a), a gate insulating film (12a) covering the gate electrode (11a), a semiconductor layer (13a) made of an oxide semiconductor and provided on the gate insulating film (12a), a source electrode (16aa) and a drain electrode (16ab) provided on the semiconductor layer (13a) via easily reducible metal layers (15aa, 15ab) and spaced apart from each other, with a channel region (C) interposed therebetween, a conductive region (E) provided in the semiconductor layer (13a), and a diffusion reducing portion (13ca, 13cb) provided in the semiconductor layer (13a), for reducing diffusion of the conductive region (E) into the channel region (C).
摘要翻译：薄膜晶体管包括栅电极（11a），覆盖栅极（11a）的栅极绝缘膜（12a），由栅极绝缘膜（12a）设置的由氧化物半导体构成的半导体层（13a），源极电极（16aa）和漏极电极（16ab），其经由易于还原的金属层（15aa，15ab）设置在半导体层（13a）上并且彼此间隔开，并且沟道区域（C）插入其间，导电区域（13a），以及设置在半导体层（13a）中的扩散减少部分（13ca，13cb），用于减少导电区域（E）扩散到沟道区域（C）中。

7. 发明申请

US20140021038A1 SPUTTERING TARGET, METHOD FOR MANUFACTURING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 审中-公开
标题翻译：溅射靶，其制造方法和制造薄膜晶体管的方法
公开(公告)号：US20140021038A1
公开(公告)日：2014-01-23
申请号：US14001986
申请日：2012-02-23
申请人： Takatsugu Kusumi , Yohsuke Kanzaki
发明人： Takatsugu Kusumi , Yohsuke Kanzaki
IPC分类号： H01L21/02
CPC分类号： H01L21/02365 , C23C14/3407 , H01J37/3414 , H01J37/3417 , H01J37/3429 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/7869 , Y10T156/1082
摘要： An object is to provide a sputtering target capable of obtaining a film having favorable characteristics.A sputtering target (100) is configured of a plurality of target materials (10) made of IGZO, a backing plate (20) made of Cu or the like, and a bonding material (30) made of In or the like. The plurality of target materials (10) are bonded with the backing plate (20) via the bonding material 30. A groove (40) having a length (L2), a width (W3) and a depth (D1) is provided on the surface of each target material (10). This groove (40) is provided parallel to a joint (15) of the mutually adjacent target materials (10) in the vicinity of the joint (15) (position with a distance (W2) from the joint (15)). The width (W3) of the groove (40) and the distance (W2) between the joint (15) and the groove (40) are sufficiently smaller than the length (L1) of each of upper and lower sides of the target material (10).
摘要翻译：目的在于提供能够得到具有良好特性的膜的溅射靶。溅射靶（100）由IGZO制成的多个靶材料（10），由Cu等制成的背板（20）和由In等构成的接合材料（30）构成。多个目标材料（10）经由接合材料30与背板（20）结合。具有长度（L2），宽度（W3）和深度（D1）的凹槽（40）设置在每个靶材料（10）的表面。该槽（40）平行于相邻的目标材料（10）的接头（15）附近（与接头15的距离（W2）的位置）的连接部15。槽（40）的宽度（W3）和接头（15）与槽（40）之间的距离（W2）足够小于目标材料的上侧和下侧的长度（L1） 10）。

8. 发明申请

US20130285054A1 SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS 有权
标题翻译：半导体器件和显示器
公开(公告)号：US20130285054A1
公开(公告)日：2013-10-31
申请号：US13992367
申请日：2011-12-06
申请人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi , Hiroshi Matsukizono
发明人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi , Hiroshi Matsukizono
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , G02F1/1368 , H01L21/46 , H01L27/1225 , H01L27/3262 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device according to the present invention includes: a gate electrode (62) of a thin film transistor (10) and an oxygen supply layer (64), the gate electrode (62) and the oxygen supply layer (64) being formed on a substrate (60); a gate insulating layer (66) formed on the gate electrode (62) and the oxygen supply layer (64); an oxide semiconductor layer (68) of the thin film transistor (10), the oxide semiconductor layer (68) being formed on the gate insulating layer (66); and a source electrode (70S) and a drain electrode (70d) of the thin film transistor (10), the source electrode (70S) and the drain electrode (70d) being formed on the gate insulating layer (66) and the oxide semiconductor layer (68).
摘要翻译：根据本发明的半导体器件包括：薄膜晶体管（10）的栅电极（62）和氧供给层（64），栅电极（62）和供氧层（64）形成在基板（60）; 形成在所述栅电极（62）和所述供氧层（64）上的栅绝缘层（66）。所述薄膜晶体管（10）的氧化物半导体层（68），所述氧化物半导体层（68）形成在所述栅极绝缘层（66）上; 以及所述薄膜晶体管（10）的源电极（70S）和漏电极（70d），所述源极电极（70S）和所述漏极电极（70d）形成在所述栅极绝缘层（66）上，并且所述氧化物半导体层（68）。

9. 发明申请

US20150108467A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 审中-公开
标题翻译：半导体器件和显示器件
公开(公告)号：US20150108467A1
公开(公告)日：2015-04-23
申请号：US13996033
申请日：2011-12-15
申请人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi , Hiroshi Matsukizono
发明人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi , Hiroshi Matsukizono
IPC分类号： H01L23/00 , H01L27/12 , H01L29/786
CPC分类号： H01L27/124 , G02F1/136286 , G02F1/1368 , G02F2001/134372 , H01L23/564 , H01L27/1225 , H01L27/1248 , H01L27/1255 , H01L27/3262 , H01L27/3276 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device (100) according to the present invention is a semiconductor device with a thin-film transistor (10), and includes: a gate electrode (62) which has been formed on a substrate (60) as a part of the thin-film transistor (10); a gate insulating layer (66) which has been formed on the gate electrode (62); an oxide semiconductor layer (68) which has been formed on the gate insulating layer (66); a source electrode (70s) and a drain electrode (70d) which have been formed on the oxide semiconductor layer (68); a protective layer (72) which has been formed on the oxide semiconductor layer (68), the source electrode (70s) and the drain electrode (70d); an oxygen supplying layer (74) which has been formed on the protective layer (72); and an anti-diffusion layer (78) which has been formed on the oxygen supplying layer (74).
摘要翻译：根据本发明的半导体器件（100）是具有薄膜晶体管（10）的半导体器件，包括：栅极电极（62），其形成在基板（60）上，作为薄膜晶体管 - 薄膜晶体管（10）; 已经形成在所述栅极（62）上的栅极绝缘层（66）; 形成在栅极绝缘层（66）上的氧化物半导体层（68）; 形成在所述氧化物半导体层上的源极电极和漏极电极，形成在氧化物半导体层（68）上的保护层（72），源电极（70s）和漏电极（70d）。形成在保护层（72）上的供氧层（74）; 和形成在供氧层（74）上的抗扩散层（78）。

10. 发明授权

US08957418B2 Semiconductor device and display apparatus 有权
标题翻译：半导体装置及显示装置
公开(公告)号：US08957418B2
公开(公告)日：2015-02-17
申请号：US13992367
申请日：2011-12-06
申请人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi , Hiroshi Matsukizono
发明人： Masao Moriguchi , Yohsuke Kanzaki , Yudai Takanishi , Takatsugu Kusumi , Hiroshi Matsukizono
IPC分类号： H01L21/46 , H01L27/15 , H01L27/12 , H01L29/786 , H01L29/49 , H01L29/66 , H01L27/32 , G02F1/1368
CPC分类号： H01L27/15 , G02F1/1368 , H01L21/46 , H01L27/1225 , H01L27/3262 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： A semiconductor device according to the present invention includes: a gate electrode (62) of a thin film transistor (10) and an oxygen supply layer (64), the gate electrode (62) and the oxygen supply layer (64) being formed on a substrate (60); a gate insulating layer (66) formed on the gate electrode (62) and the oxygen supply layer (64); an oxide semiconductor layer (68) of the thin film transistor (10), the oxide semiconductor layer (68) being formed on the gate insulating layer (66); and a source electrode (70S) and a drain electrode (70d) of the thin film transistor (10), the source electrode (70S) and the drain electrode (70d) being formed on the gate insulating layer (66) and the oxide semiconductor layer (68).
摘要翻译：根据本发明的半导体器件包括：薄膜晶体管（10）的栅电极（62）和氧供给层（64），栅电极（62）和供氧层（64）形成在基板（60）; 形成在所述栅电极（62）和所述供氧层（64）上的栅绝缘层（66）。所述薄膜晶体管（10）的氧化物半导体层（68），所述氧化物半导体层（68）形成在所述栅极绝缘层（66）上; 以及所述薄膜晶体管（10）的源电极（70S）和漏电极（70d），所述源极电极（70S）和所述漏极电极（70d）形成在所述栅极绝缘层（66）上，并且所述氧化物半导体层（68）。

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