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1. 发明授权

US07569856B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07569856B2
公开(公告)日：2009-08-04
申请号：US11078440
申请日：2005-03-14
申请人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
发明人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
IPC分类号： H01L29/786 , H01L21/336 , H01L21/84
CPC分类号： H01L29/665 , H01L21/02145 , H01L21/02244 , H01L21/02258 , H01L21/31116 , H01L21/31144 , H01L21/31683 , H01L21/31687 , H01L21/321 , H01L27/124 , H01L27/127 , H01L29/458 , H01L29/66598 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要翻译：形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。此后，进行一个导电性元素的离子掺杂。高电阻率区域限定在栅极绝缘膜下。

2. 发明授权

US07235828B2 Semiconductor device with residual nickel from crystallization of semiconductor film 失效
标题翻译：具有半导体膜结晶残留镍的半导体器件
公开(公告)号：US07235828B2
公开(公告)日：2007-06-26
申请号：US10952774
申请日：2004-09-30
申请人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
发明人： Hisashi Ohtani , Akiharu Miyanaga , Hongyong Zhang , Naoaki Yamaguchi
IPC分类号： H01L29/786
CPC分类号： H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/1277 , H01L29/66757
摘要： It is an object to obtain a crystalline silicon film having preferable characteristics for a thin film transistor.A crystalline silicon film having improved crystallinity is obtained by the following steps: forming a silicon nitride film substantially in contact with an amorphous silicon film on glass substrate; introducing a catalyst element such as nickel; performing an annealing treatment at a temperature of 500 to 600° C. for crystallization; and further irradiating it with a laser light, thereby a crystalline silicon film having improved crystallinity can be obtained. By using the crystalline silicon film thus obtained, a semiconductor device such as a TFT having improved characteristic can be obtained.
摘要翻译：本发明的目的是获得具有优选薄膜晶体管特性的晶体硅膜。通过以下步骤获得具有改善的结晶度的晶体硅膜：在玻璃基板上形成与非晶硅膜基本接触的氮化硅膜; 引入催化剂元素如镍; 在500〜600℃的温度下进行退火处理，进行结晶化; 并进一步用激光照射，从而可以获得具有改善的结晶度的结晶硅膜。通过使用由此获得的结晶硅膜，可以获得具有改善的特性的诸如TFT的半导体器件。

3. 发明申请

US20070138473A1 Semiconductor device and method of manufacture thereof 失效
公开(公告)号：US20070138473A1
公开(公告)日：2007-06-21
申请号：US11647179
申请日：2006-12-29
申请人： Hongyong Zhang , Yasuhiko Takemura , Toshimitsu Konuma , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi
发明人： Hongyong Zhang , Yasuhiko Takemura , Toshimitsu Konuma , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi
IPC分类号： H01L29/04
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： There is provided a method by which lightly doped drain (LDD) regions can be formed easily and at good yields in source/drain regions in thin film transistors possessing gate electrodes covered with an oxide covering. A lightly doped drain (LDD) region is formed by introducing an impurity into an island-shaped silicon film in a self-aligning manner, with a gate electrode serving as a mask. First, low-concentration impurity regions are formed in the island-shaped silicon film by using rotation-tilt ion implantation to effect ion doping from an oblique direction relative to the substrate. Low-concentration impurity regions are also formed below the gate electrode at this time. After that, an impurity at a high concentration is introduced normally to the substrate, so forming high-concentration impurity regions. In the above process, a low-concentration impurity region remains below the gate electrode and constitutes a lightly doped drain region.

4. 发明申请

US20070138468A1 Semiconductor device and method for producing it 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070138468A1
公开(公告)日：2007-06-21
申请号：US11705710
申请日：2007-02-14
申请人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
发明人： Shunpei Yamazaki , Naoaki Yamaguchi , Setsuo Nakajima
IPC分类号： H01L31/00
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1277 , H01L27/14609 , H01L29/42384 , H01L29/4908 , H01L29/66765
摘要： Disclosed is a technique of improving the heat resistance of the aluminum gate electrode in bottom-gate-type TFT of which the active layer is made of a crystalline silicon film. A pattern of a laminate of a titanium film 102 and an aluminum film 103 is formed on a glass substrate 101. The pattern is to give a gate electrode 100. Then, the titanium film 102 is side-etched. Next, the layered substrate is heated to thereby intentionally form hillocks and whiskers on the surface of the aluminum pattern 103. Next, the aluminum pattern 103 acting as an anode is subjected to anodic oxidation to form an oxide film 105 thereon. The anodic oxidation extends to the lower edge of the aluminum pattern 103, at which the titanium layer was side-etched. Next, a gate-insulating film 106 and an amorphous silicon film are formed. A mask is formed over the pattern, which is to give the gate electrode, and then a nickel acetate solution is applied to the layered structure. Thus, nickel is kept in contact with the surface of the structure. Next, this is heated to induce crystal growth in the silicon film from the region contacted with nickel to the masked region. In the bottom-gate-type TFT thus produced, the active layer is made of a crystalline silicon film. In this process, since the anodic oxide film is formed as in FIG. 1(C), aluminum does neither melt to flow away nor diffuse away. Thus, the heat resistance of the aluminum electrode formed is improved.
摘要翻译：公开了一种提高活性层由结晶硅膜制成的底栅型TFT中的铝栅电极的耐热性的技术。在玻璃基板101上形成钛膜102和铝膜103的叠层图案。图案是给予栅电极100.然后，对钛膜102进行侧蚀刻。接下来，加热层叠基板，从而有意地在铝图案103的表面上形成小丘和晶须。接下来，将用作阳极的铝图案103进行阳极氧化以在其上形成氧化膜105。阳极氧化延伸到铝图案103的下边缘，钛层被侧蚀刻。接下来，形成栅极绝缘膜106和非晶硅膜。在图案上形成掩模，得到栅电极，然后将乙酸镍溶液施加到层状结构。因此，镍与结构的表面保持接触。接下来，将其加热以在与镍接触的区域中的硅膜中引起晶体生长至掩蔽区域。在如此制造的底栅型TFT中，有源层由结晶硅膜制成。在该方法中，由于阳极氧化膜如图1所示那样形成。如图1（C）所示，铝既不熔化，也不会流失。因此，形成的铝电极的耐热性得到改善。

5. 发明授权

US07206053B2 Electro-optical device 有权
标题翻译：电光装置
公开(公告)号：US07206053B2
公开(公告)日：2007-04-17
申请号：US11073752
申请日：2005-03-08
申请人： Hongyong Zhang , Naoaki Yamaguchi , Yasuhiko Takemura
发明人： Hongyong Zhang , Naoaki Yamaguchi , Yasuhiko Takemura
IPC分类号： G02F1/1343
CPC分类号： G02F1/136286 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F2201/121 , G02F2201/40
摘要： An auxiliary capacitor for a pixel of an active matrix type liquid crystal display is provided without decreasing the aperture ratio. A transparent conductive film for a common electrode is formed under a pixel electrode constituted by a transparent conductive film with an insulation film provided there between. Further, the transparent conductive film for the common electrode is maintained at fixed potential, formed so as to cover a gate bus line and a source bus line, and configured such that signals on each bus line are not applied to the pixel electrode. The pixel electrode is disposed so that all edges thereof overlap the gate bus line and source bus line. As a result, each of the bus lines serves as a black matrix. Further, the pixel electrode overlaps the transparent conductive film for the common electrode to form a storage capacitor.
摘要翻译：提供一种用于有源矩阵型液晶显示器的像素的辅助电容器，而不会降低开口率。用于公共电极的透明导电膜形成在由透明导电膜构成的像素电极之间，其间设置有绝缘膜。此外，用于公共电极的透明导电膜保持固定电位，形成为覆盖栅极总线和源极总线，并且被配置为使得每个总线上的信号不被施加到像素电极。像素电极被设置成使得其所有边缘与栅极总线和源极总线重叠。结果，每条总线作为黑矩阵。此外，像素电极与用于公共电极的透明导电膜重叠形成存储电容器。

6. 发明授权

US07166503B2 Method of manufacturing a TFT with laser irradiation 失效
标题翻译：用激光照射制造TFT的方法
公开(公告)号：US07166503B2
公开(公告)日：2007-01-23
申请号：US10917373
申请日：2004-08-13
申请人： Hongyong Zhang , Hideto Ohnuma , Naoaki Yamaguchi , Yasuhiko Takemura
发明人： Hongyong Zhang , Hideto Ohnuma , Naoaki Yamaguchi , Yasuhiko Takemura
IPC分类号： H01L21/00
CPC分类号： H01L27/1296 , H01L27/1214 , H01L27/127 , H01L29/66757 , H01L29/78618
摘要： In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a relatively high voltage. A gate insulating film is etched using the barrier anodic oxide as a mask. The porous anodic oxide is selectively etched after etching barrier anodic oxide, to obtain a region of an active layer on which the gate insulating film is formed and the other region of the active layer on which the gate insulating film is not formed. An element including at least one of oxygen, nitrogen and carbon is introduced into the region of the active layer at high concentration in comparison with a concentration of the other region of the active layer. Further, N- or P-type impurity is introduced into the active layer. Accordingly, high resistance impurity regions are formed in both sides of a channel forming region.
摘要翻译：在薄膜晶体管（TFT）中，在栅电极上形成掩模，并且使用相对低的电压在栅电极的两侧形成多孔阳极氧化物。在栅电极和多孔阳极氧化物之间以及使用较高电压的栅电极上形成阻挡阳极氧化物。使用阻挡阳极氧化物作为掩模蚀刻栅极绝缘膜。在蚀刻阻挡阳极氧化物之后，选择性地蚀刻多孔阳极氧化物，以获得其上形成栅极绝缘膜的有源层的区域和不形成栅极绝缘膜的有源层的另一区域。与活性层的其他区域的浓度相比，包含氧，氮和碳中的至少一种的元素以高浓度被引入活性层的区域。此外，将N型或P型杂质引入有源层。因此，在沟道形成区域的两侧形成高电阻杂质区域。

7. 发明授权

US07078246B2 Optical processing apparatus and optical processing method 失效
公开(公告)号：US07078246B2
公开(公告)日：2006-07-18
申请号：US10816899
申请日：2004-04-05
申请人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
发明人： Naoaki Yamaguchi , Koichiro Tanaka , Satoshi Teramoto
IPC分类号： H01L21/00
CPC分类号： C30B13/24 , Y10S117/904
摘要： In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.

8. 发明授权

US06982768B2 Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US06982768B2
公开(公告)日：2006-01-03
申请号：US09797913
申请日：2001-03-01
申请人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Hideomi Suzawa , Naoaki Yamaguchi
发明人： Tatsuya Ohori , Michiko Takei , Hongyong Zhang , Hideomi Suzawa , Naoaki Yamaguchi
IPC分类号： G02F1/136
CPC分类号： G02F1/136209
摘要： An active type liquid crystal display device, comprising an electrode being formed by using a transparent electrically conductive film constituting a pixel electrode, which allows the black matrix to be set as the common potential. Also claimed is an active type liquid crystal display device of the same type as above, comprising an electrode being formed on the same layer as that of the source line, which allows the black matrix to be set as the common potential.
摘要翻译：一种主动型液晶显示装置，其特征在于，具有通过使用构成像素电极的透明导电膜形成的电极，其能够将黑矩阵设定为公共电位。还要求保护的是与上述相同类型的有源型液晶显示装置，其包括形成在与源极线相同的层上的电极，其允许将黑矩阵设定为公共电位。

9. 发明申请

US20050153489A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050153489A1
公开(公告)日：2005-07-14
申请号：US11078440
申请日：2005-03-14
申请人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
发明人： Toshimitsu Konuma , Akira Sugawara , Yukiko Uehara , Hongyong Zhang , Atsunori Suzuki , Hideto Ohnuma , Naoaki Yamaguchi , Hideomi Suzawa , Hideki Uochi , Yasuhiko Takemura
IPC分类号： H01L21/311 , H01L21/316 , H01L21/321 , H01L21/336 , H01L27/12 , H01L29/45 , H01L29/786 , H01L21/84
CPC分类号： H01L29/665 , H01L21/02145 , H01L21/02244 , H01L21/02258 , H01L21/31116 , H01L21/31144 , H01L21/31683 , H01L21/31687 , H01L21/321 , H01L27/124 , H01L27/127 , H01L29/458 , H01L29/66598 , H01L29/66757 , H01L29/78621 , H01L29/78627
摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.
摘要翻译：形成在绝缘基板源极，漏极和沟道区上的TFT，至少形成在沟道区上的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。在沟道区域和漏极区域之间，提供具有较高电阻率的区域以便减小偏转电流。形成该结构的方法包括以下步骤：在栅电极侧阳极氧化栅电极以形成多孔阳极氧化膜; 使用多孔阳极氧化膜去除一部分栅极绝缘体作为掩模，使得栅极绝缘膜延伸超过栅极电极但不完全覆盖源极和漏极区域。此后，进行一个导电性元素的离子掺杂。高电阻率区域限定在栅极绝缘膜下。

10. 发明授权

US06914260B2 Electro-optical device 失效
公开(公告)号：US06914260B2
公开(公告)日：2005-07-05
申请号：US10267526
申请日：2002-10-08
申请人： Hongyong Zhang , Naoaki Yamaguchi , Yasuhiko Takemura
发明人： Hongyong Zhang , Naoaki Yamaguchi , Yasuhiko Takemura
IPC分类号： G02B5/00 , G02F1/1343 , G02F1/136 , G02F1/1362 , G02F1/1368 , G09F9/00 , H01L29/786 , H01L29/04
CPC分类号： G02F1/136286 , G02F1/136209 , G02F1/136213 , G02F1/136227 , G02F2201/121 , G02F2201/40
摘要： An auxiliary capacitor for a pixel of an active matrix type liquid crystal display is provided without decreasing the aperture ratio. A transparent conductive film for a common electrode is formed under a pixel electrode constituted by a transparent conductive film with an insulation film provided therebetween. Further, the transparent conductive film for the common electrode is maintained at fixed potential, formed so as to cover a gate bus line and a source bus line, and configured such that signals on each bus line are not applied to the pixel electrode. The pixel electrode is disposed so that all edges thereof overlap the gate bus line and source bus line. As a result, each of the bus lines serves as a black matrix. Further, the pixel electrode overlaps the transparent conductive film for the common electrode to form a storage capacitor.

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