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1. 发明授权

US08779478B2 Thin film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08779478B2
公开(公告)日：2014-07-15
申请号：US13701028
申请日：2011-05-23
申请人： Masao Moriguchi , Michiko Takei , Yohsuke Kanzaki , Tsuyoshi Inoue , Tetsuo Fukaya , Yudai Takanishi , Takatsugu Kusumi , Yoshiki Nakatani , Tetsuya Okamoto , Kenji Nakanishi
发明人： Masao Moriguchi , Michiko Takei , Yohsuke Kanzaki , Tsuyoshi Inoue , Tetsuo Fukaya , Yudai Takanishi , Takatsugu Kusumi , Yoshiki Nakatani , Tetsuya Okamoto , Kenji Nakanishi
IPC分类号： H01L29/76 , H01L29/66 , H01L29/786 , H01L29/24
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78696
摘要： A TFT 20 includes a gate electrode 21, a gate insulating film 22, a semiconductor layer 23, a source electrode 24, a drain electrode 25, etc. The semiconductor layer 23 is comprised of a metal oxide semiconductor (IGZO), and has a source portion 23a that contacts the source electrode 24, a drain electrode 23b that contacts the drain electrode 25, and a channel portion 23c that is located between the source and drain portions 23a, 23b. A reduced region 30 is formed at least in the channel portion 23c of the semiconductor layer 23, and the reduced region 30 has a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer 23.
摘要翻译： TFT20包括栅极电极21，栅极绝缘膜22，半导体层23，源极24，漏极电极25等。半导体层23由金属氧化物半导体（IGZO）构成，具有与源电极24接触的源部23a，与漏电极25接触的漏电极23b和位于源极部23a，第二漏极23b之间的沟道部23c。还原区域30至少形成在半导体层23的沟道部分23c中，并且还原区域30具有比半导体层23的其余部分中诸如In的金属的单质更高的含量。

2. 发明申请

US20130175521A1 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20130175521A1
公开(公告)日：2013-07-11
申请号：US13701028
申请日：2011-05-23
申请人： Masao Moriguchi , Michiko Takei , Yohsuke Kanzaki , Tsuyoshi Inoue , Tetsuo Fukaya , Yudai Takanishi , Takatsugu Kusumi , Yoshiki Nakatani , Tetsuya Okamoto , Kenji Nakanishi
发明人： Masao Moriguchi , Michiko Takei , Yohsuke Kanzaki , Tsuyoshi Inoue , Tetsuo Fukaya , Yudai Takanishi , Takatsugu Kusumi , Yoshiki Nakatani , Tetsuya Okamoto , Kenji Nakanishi
IPC分类号： H01L29/786 , H01L29/24
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78696
摘要： A TFT 20 includes a gate electrode 21, a gate insulating film 22, a semiconductor layer 23, a source electrode 24, a drain electrode 25, etc. The semiconductor layer 23 is comprised of a metal oxide semiconductor (IGZO), and has a source portion 23a that contacts the source electrode 24, a drain electrode 23b that contacts the drain electrode 25, and a channel portion 23c that is located between the source and drain portions 23a, 23b. A reduced region 30 is formed at least in the channel portion 23c of the semiconductor layer 23, and the reduced region 30 has a higher content of a simple substance of a metal such as In than the remaining portion of the semiconductor layer 23.
摘要翻译： TFT20包括栅极电极21，栅极绝缘膜22，半导体层23，源极24，漏极电极25等。半导体层23由金属氧化物半导体（IGZO）构成，具有与源电极24接触的源部23a，与漏电极25接触的漏电极23b和位于源极部23a，第二漏极23b之间的沟道部23c。还原区域30至少形成在半导体层23的沟道部分23c中，并且还原区域30具有比半导体层23的其余部分中诸如In的金属的单质更高的含量。

3. 发明申请

US20120200482A1 LIQUID CRYSTAL DISPLAY PANEL 审中-公开
标题翻译：液晶显示面板
公开(公告)号：US20120200482A1
公开(公告)日：2012-08-09
申请号：US13500245
申请日：2010-09-30
申请人： Tetsuo Fukaya , Yuhichi Saitoh , Hiroyuki Moriwaki , Yasuhiro Nakatake , Yukio kurozumi , Masato Kakuta , Masahiko Nakamizo , Takahiro Umezawa
发明人： Tetsuo Fukaya , Yuhichi Saitoh , Hiroyuki Moriwaki , Yasuhiro Nakatake , Yukio kurozumi , Masato Kakuta , Masahiko Nakamizo , Takahiro Umezawa
IPC分类号： G09G3/36
CPC分类号： G02F1/136204 , G02F1/133345 , G02F1/13454 , G02F2201/50
摘要： A liquid crystal display panel 100 has: a first substrate 11, having an active region AA having pixel electrodes and TFTs, and a gate driver region GDR provided on the outside of the active region AA; and a second substrate 21, disposed opposing the first substrate 11 with a liquid crystal layer 30 interposed therebetween, and having an opposite electrode 23. The opposite electrode 23 opposes the gate driver region GDR with the liquid crystal layer 30 interposed therebetween, and an insulating resin layer 26 is formed on the region of the opposite electrode 23 so that the insulating resin layer 26 opposes the gate driver region GDR. Thus, short-circuit failure between the driver region of the TFT substrate and the opposite electrode is eliminated.
摘要翻译：液晶显示面板100具有：具有具有像素电极和TFT的有源区域AA的第一基板11和设置在有源区域AA的外侧的栅极驱动器区域GDR; 以及第二基板21，其与第一基板11相对设置有夹在其间的液晶层30，并且具有相对的电极23.相对电极23与栅极驱动器区域GDR相对，其间插入液晶层30，并且绝缘树脂层26形成在相对电极23的区域上，使得绝缘树脂层26与栅极驱动器区域GDR相对。因此，消除了TFT基板的驱动器区域和相对电极之间的短路故障。

4. 发明申请

US20130069930A1 SHIFT REGISTER, SCANNING SIGNAL LINE DRIVE CIRCUIT, AND DISPLAY DEVICE 审中-公开
标题翻译：移位寄存器，扫描信号线驱动电路和显示装置
公开(公告)号：US20130069930A1
公开(公告)日：2013-03-21
申请号：US13635414
申请日：2010-10-29
申请人： Tetsuo Fukaya , Masashi Yonemaru , Kenichi Ishii , Masahiko Nakamizo
发明人： Tetsuo Fukaya , Masashi Yonemaru , Kenichi Ishii , Masahiko Nakamizo
IPC分类号： G09G3/36
CPC分类号： G09G3/3648 , G09G3/3677 , G09G2300/0408 , G09G2300/0417 , G09G2310/0286 , G09G2310/0291 , G09G2310/08 , G09G2330/021 , G11C19/184 , G11C19/28
摘要： A bistable circuit includes an output terminal that outputs a state signal, an output terminal that outputs an other-stage control signal, a first node of which a potential is controlled based on a set signal and a clear signal, a thin-film transistor that provides a potential of a second clock to the output terminal when a potential of the first node is at a high level, a thin-film transistor that provides a potential of a first clock to the output terminal when a potential of the first node is at a high level, and a thin-film transistor for changing a potential of the other-stage control signal to a low level based on a reset signal. The first clock is generated by a power source of a different system from the second clock, and has a smaller amplitude than that of the second clock.
摘要翻译：双稳态电路包括输出状态信号的输出端子，输出其他级控制信号的输出端子，基于设定信号和清零信号控制电位的第一节点;薄膜晶体管，当第一节点的电位处于高电平时，向输出端提供第二时钟的电位;薄膜晶体管，当第一节点处于第一节点的电位时，向输出端提供第一时钟的电势高电平的薄膜晶体管和用于根据复位信号将另一级控制信号的电位变为低电平的薄膜晶体管。第一时钟由与第二时钟不同的系统的电源产生，并且具有比第二时钟的幅度更小的振幅。

5. 发明申请

US20130037807A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20130037807A1
公开(公告)日：2013-02-14
申请号：US13583311
申请日：2011-03-10
申请人： Tetsuo Fukaya
发明人： Tetsuo Fukaya
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L29/78606 , H01L27/1225 , H01L29/45 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A semiconductor device (100) according to the present invention includes: a substrate (1); a gate electrode (11) which is arranged on the substrate; a gate insulating layer (12) which has been formed on the gate electrode; an oxide semiconductor layer (13) which has been formed on the gate insulating layer and which includes a channel region (13c) and source and drain regions (13s, 13d) that interpose the channel region between them; a source electrode (14) which is electrically connected to the source region; a drain electrode (15) which is electrically connected to the drain region; and a metallic compound layer (16) which is arranged between the source and drain electrodes so as to be located on, and contact with, the oxide semiconductor layer. The metallic compound layer is an insulating layer or semiconductor layer which is made of a compound of the same metallic element as at least one of metallic elements that are included in the source and drain electrodes.
摘要翻译：根据本发明的半导体器件（100）包括：衬底（1）; 布置在基板上的栅电极（11）; 形成在栅电极上的栅极绝缘层（12）; 形成在所述栅极绝缘层上并且包括沟道区域（13c）的氧化物半导体层（13）和在其间插入沟道区域的源极和漏极区域（13s，13d）源极电极，其电连接到所述源极区域; 漏极电极，其电连接到所述漏极区域; 以及金属化合物层（16），其设置在源极和漏极之间，以便位于氧化物半导体层上并与其接触。金属化合物层是绝缘层或半导体层，其由与源极和漏极中包括的金属元素中的至少一种相同的金属元素的化合物制成。

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