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51. 发明申请

US20080056557A1 System and method for analyzing a light beam of a wafer inspection tool or an exposure tool 审中-公开
标题翻译：用于分析晶片检查工具或曝光工具的光束的系统和方法
公开(公告)号：US20080056557A1
公开(公告)日：2008-03-06
申请号：US11514798
申请日：2006-08-31
申请人： J.E. Patrick Gagnon , Chris Dale Atkinson , Richard L. Guldi
发明人： J.E. Patrick Gagnon , Chris Dale Atkinson , Richard L. Guldi
IPC分类号： G06K9/00
CPC分类号： G01N21/9501 , G03F7/7085
摘要： A system operable to detect a light beam generated by a light source includes a substrate that comprises a wafer operable to be inspected by a wafer inspection tool or exposed by an exposure tool. One or more image sensors are disposed outwardly from the substrate. An image sensor of the one or more image sensors is operable to detect a light beam and generate a sensor signal representing the detected light beam.
摘要翻译：可操作以检测由光源产生的光束的系统包括：基板，其包括可操作以由晶片检查工具检查或由曝光工具暴露的晶片。一个或多个图像传感器从衬底向外设置。一个或多个图像传感器的图像传感器可操作以检测光束并产生表示检测到的光束的传感器信号。

52. 发明授权

US06967110B2 Sensitive test structure for assessing pattern anomalies 有权
标题翻译：用于评估模式异常的敏感测试结构
公开(公告)号：US06967110B2
公开(公告)日：2005-11-22
申请号：US10438651
申请日：2003-05-15
申请人： Richard L. Guldi , Howard Tigelaar , Anand Reddy
发明人： Richard L. Guldi , Howard Tigelaar , Anand Reddy
IPC分类号： H01L23/544 , H01L21/00
CPC分类号： H01L22/34
摘要： A subset test module and associated methodology for utilizing the same are disclosed that facilitate identification of process drift in semiconductor fabrication processing. A test wafer having a plurality of die formed thereon has a plurality of test modules formed within the die. The plurality of test modules are substantially the same from die to die, and the respective modules similarly include a plurality of test structures that are substantially the same from module to module. Corresponding test structures within respective modules on different die are inspected and compared to one another to find structures that are sensitive to process drift. One or more structures that experience differences from module to module on different die are utilized to develop one or more test modules that can be selectively located within production wafers and monitored to determine whether process drift and/or one or more other aberrant processing conditions are occurring.
摘要翻译：公开了一种用于利用其的子集测试模块和相关联的方法，其有助于识别半导体制造处理中的工艺漂移。具有形成在其上的多个模具的测试晶片具有在模具内形成的多个测试模块。多个测试模块从模具到芯片基本上相同，并且各个模块类似地包括从模块到模块基本上相同的多个测试结构。对不同模具内相应模块内的相应测试结构进行检查和比较，以找到对工艺漂移敏感的结构。利用在不同管芯上从模块到模块经历差异的一个或多个结构来开发一个或多个可选择性地位于生产晶片内并被监控的测试模块，以确定是否发生过程漂移和/或一个或多个其它异常处理条件。

53. 发明授权

US06395102B1 Method and apparatus for in-situ reticle cleaning at photolithography tool 有权
标题翻译：光刻工具中原位掩模版清洗的方法和装置
公开(公告)号：US06395102B1
公开(公告)日：2002-05-28
申请号：US09139420
申请日：1998-08-25
申请人： Sima Salamati-Saradh , Richard L. Guldi , David R. Wyke
发明人： Sima Salamati-Saradh , Richard L. Guldi , David R. Wyke
IPC分类号： B08B700
CPC分类号： G03F1/82 , B08B5/02 , G03F7/70866 , G03F7/70925 , G03F7/70933 , Y10S134/902
摘要： A method and system for cleaning a reticle. There is provided a clean chamber and a reticle having a pair of opposing edges and a pair of opposing surfaces which is to be cleaned disposed in the clean chamber. A gas inert to the reticle is directed in a direction tangential to each of the surfaces of the reticle and along one the edge of the reticle. The gas is exhausted from a location spaced from the other of the pair of opposing edges and remote form the one edge. An optional monitor monitors the particles in the exhausted gas. The gas is preferably applied in pulses which have a pulse length of from about 0.05 second to about 1 second and a pulse repetition rate of from about 0.5/second to about 40/second. The gas is preferably ionized and preferably is applied at a pressure of from about 20 psi to about 120 psi. The stepper chamber is vibrationally isolated from the blow-off chamber. Also, the controller for the cleaning operation is synchronized with the stepper operation to avoid cleaning while the stepper operation is ongoing.
摘要翻译：一种用于清洁掩模版的方法和系统。提供了一个干净的室和一个具有一对相对边缘和一对待清洁的相对表面的掩模版，其设置在清洁室中。对于掩模版惰性的气体沿与掩模版的每个表面相切的方向并且沿着掩模版的边缘的一个方向被引导。气体从与该对相对边缘中的另一个间隔开的位置排出并远离形成一个边缘。可选的监视器监视排出的气体中的颗粒。气体优选以脉冲长度为约0.05秒至约1秒的脉冲和约0.5秒/秒至约40秒的脉冲重复频率施加。气体优选被离子化，并且优选以约20psi至约120psi的压力施加气体。步进室与吹出室振动隔离。此外，用于清洁操作的控制器与步进器操作同步，以在步进操作正在进行时避免清洁。

54. 发明授权

US06267894B1 Method for efficient filtration of chemical baths 有权
标题翻译：有效过滤化学浴的方法
公开(公告)号：US06267894B1
公开(公告)日：2001-07-31
申请号：US09205028
申请日：1998-12-03
申请人： Richard L. Guldi , Vikram N. Doshi , James M. Drumm
发明人： Richard L. Guldi , Vikram N. Doshi , James M. Drumm
IPC分类号： B01D2952
CPC分类号： B01D37/04 , B01D61/142 , B01D61/22 , B01D2201/54 , Y10S134/902
摘要： A method of filtering a bath (1,31) having a liquid containing particles of varying sizes therein and the recirculation and filtering system. The method and system require providing a recirculation route from the bath outflow and returning to the bath inflow. The route includes a first path communicating with the bath outflow and having serially a first controllable valve (5,9) and a filter having a relatively large pore size. The route also includes a second path communicating with the bath outflow and having serially a second controllable valve (11,15) and a filter having a relatively small pore size. There is a return path from each filter to the bath inflow. The return path from each filter can be a separate path or the paths can be connected at the output end before returning to the bath. The particle count in the recirculation route can be monitored either between the bath outflow and the first and second valves (3), between the bath inflow and each of the filters having large and small pore size (23), or both for controlling operation of the first and second valves. The controllable valves can also be controlled by a time program, bath operation program or the like.
摘要翻译：一种过滤具有含有各种尺寸颗粒的液体的浴液（1,31）的方法和再循环和过滤系统。该方法和系统需要从浴槽出口提供再循环路线并返回到浴槽流入。该路线包括与浴槽流出物连通并具有串联的第一可控阀（5,9）和具有较大孔径的过滤器的第一路径。该路线还包括与浴流出物连通的第二路径，并且连续地具有第二可控阀（11,15）和具有相对较小孔径的过滤器。从每个过滤器到浴缸流入都有一个返回路径。来自每个过滤器的返回路径可以是单独的路径，或者可以在返回到浴缸之前在输出端连接路径。可以在浴流出与第一和第二阀（3）之间，浴槽流入与具有大孔径和小孔径（23）的每个过滤器之间，或两者之间监控再循环路线中的颗粒数，以控制操作第一和第二阀。可控阀也可以通过时间程序，浴操作程序等进行控制。

55. 发明授权

US06239003B1 Method of simultaneous fabrication of isolation and gate regions in a semiconductor device 有权
标题翻译：在半导体器件中同时制造隔离和栅极区域的方法
公开(公告)号：US06239003B1
公开(公告)日：2001-05-29
申请号：US09334786
申请日：1999-06-16
申请人： Kalipatnam V. Rao , Richard L. Guldi , Kueing-Long Chen
发明人： Kalipatnam V. Rao , Richard L. Guldi , Kueing-Long Chen
IPC分类号： H01L2176
CPC分类号： H01L21/76205 , H01L21/823462 , H01L21/823481
摘要： A method of forming a semiconductor device includes forming a moat stack outwardly from a substrate, the moat stack comprising a dielectric pad disposed outwardly from the substrate, a silicon buffer structure disposed outwardly from the dielectric pad, and a protective dielectric cap disposed outwardly from the silicon buffer structure. The method further comprises forming a protective sidewall structure outwardly from at least a sidewall of the silicon buffer structure, forming an isolation dielectric region adjacent to the moat stack, after formation of the isolation dielectric region, removing the protective dielectric cap, and forming a conductive gate comprising the silicon buffer structure.
摘要翻译：形成半导体器件的方法包括从衬底向外形成护城河堆叠，所述护城河堆叠包括从衬底向外设置的介质焊盘，从介质焊盘向外设置的硅缓冲结构以及从该介质焊盘设置向外的保护电介质盖硅缓冲结构。该方法还包括从硅缓冲结构的至少一个侧壁向外形成保护侧壁结构，在形成隔离电介质区域之后形成隔离电介质区域邻近的隔离电介质区域，去除保护电介质盖并形成导电门包括硅缓冲结构。

56. 发明授权

US06174817B1 Two step oxide removal for memory cells 有权
标题翻译：用于记忆细胞的两步氧化物去除
公开(公告)号：US06174817B1
公开(公告)日：2001-01-16
申请号：US09140578
申请日：1998-08-26
申请人： Vikram N. Doshi , Hiro Tomomatsu , Roy D. Clark , Richard L. Guldi
发明人： Vikram N. Doshi , Hiro Tomomatsu , Roy D. Clark , Richard L. Guldi
IPC分类号： H01L2130
CPC分类号： H01L21/02054 , H01L21/31116 , H01L21/31637 , H01L27/10814 , H01L28/40
摘要： Hydrofluoric acid (HF) mixed with water and often buffered with ammonium fluoride is a standard silicon dioxide wet etchant which is followed by a rinse. An improved silicon dioxide etch is vapor HF which may be followed by a water vapor rinse. The invention discloses a further improved silicon dioxide etch. Following an initial exposure to vapor HF for oxide removal, a first insitu water rinse occurs. A second exposure to vapor HF then occurs and is followed by a second insitu water rinse. Water, rather than water vapor, aids in freeing particles from the wafer surface. During both the water rinses, the wafer may be rotated at increasing speeds to aid in sweeping particles from wafer surface. The process may be practiced in a commercially available reactor and is suitable for ULSI devices having complex topographies, such as, for example, 64 megabit DRAMs employing crown type memory cells.
摘要翻译：与水混合并经常用氟化铵缓冲的氢氟酸（HF）是标准的二氧化硅湿蚀刻剂，随后进行冲洗。改进的二氧化硅蚀刻是蒸汽HF，其后可以是水蒸汽冲洗。本发明公开了进一步改进的二氧化硅蚀刻。在初始暴露于蒸气HF以除去氧化物后，发生第一次原位水冲洗。然后发生第二次暴露于蒸气HF，然后进行第二次自身水冲洗。水而不是水蒸汽有助于从晶片表面释放颗粒。在水冲洗期间，晶片可以以增加的速度旋转以帮助从晶片表面清除颗粒。该方法可以在市售反应器中实施，并且适用于具有复杂形貌的ULSI器件，例如采用冠型存储器单元的64兆位DRAM。

57. 发明授权

US5576230A Method of fabrication of a semiconductor device having a tapered implanted region 失效
标题翻译：具有锥形植入区域的半导体器件的制造方法
公开(公告)号：US5576230A
公开(公告)日：1996-11-19
申请号：US300301
申请日：1994-09-02
申请人： Richard L. Guldi
发明人： Richard L. Guldi
IPC分类号： H01L21/266 , H01L21/336 , H01L29/08 , H01L29/78 , H01L21/265
CPC分类号： H01L29/66575 , H01L21/266 , H01L29/0847 , H01L29/6659 , H01L29/7833 , Y10S438/965
摘要： A semiconductor device includes implanted regions (54) formed in a semiconductor layer (12). The implanted regions (54) are self-aligned with field oxide regions (20) and a gate structure (25) and have side edges (56, 57) that are formed at an angle with respect to the (001) plane and bottom edges (58) that are aligned with the (110) plane. Since side edges (56, 57) and not aligned with the (001) plane, when an anneal is performed, recrystallization proceeds primarily from the (110) plane alone rather than from the (110) and (001) planes simultaneously. Accordingly, the edge recrystalline damage caused by the intersecting of recrystallized silicon growing along the (110) and (001) planes simultaneously is avoided.
摘要翻译：半导体器件包括形成在半导体层（12）中的注入区（54）。植入区域（54）与场氧化物区域（20）和栅极结构（25）自对准，并且具有相对于（001）面成角度形成的侧边缘（56,57）和底部边缘（58）与（110）平面对齐。由于侧边缘（56,57）并且不与（001）平面对齐，当进行退火时，重结晶主要仅从（110）面而不是从（110）和（001）面同时进行。因此，避免了沿（110）面和（001）面同时生长的再结晶硅相交引起的边缘再结晶损伤。

58. 发明授权

US5520205A Apparatus for wafer cleaning with rotation 失效
标题翻译：用于旋转晶圆清洗的装置
公开(公告)号：US5520205A
公开(公告)日：1996-05-28
申请号：US269737
申请日：1994-07-01
申请人： Richard L. Guldi , Robert F. Kunesh
发明人： Richard L. Guldi , Robert F. Kunesh
IPC分类号： H01L21/00 , B08B3/12 , B08B11/02
CPC分类号： H01L21/67057 , H01L21/67051 , Y10S134/902
摘要： A method and apparatus for a wafer cleaner using a rotation mechanism. Wafers are placed into a carrier 3 having grooves to maintain a spacing between the wafers. The carrier 3 and wafers are placed into a tank 1 with a cleaning solution. Nozzles 11 are used to direct pressurized solution against the wafers causing them to rotate within the carrier. In another embodiment, the tank 1 includes a megasonic transducer 16. In the second embodiment, the wafers are rotated while the megasonic transducer 16 is producing megasonic energy. The rotation of the wafers causes the cleaning solution and the megasonic energy to act on the wafers uniformly, and further exposes the edges of the wafers directly to the cleaning solution and the megasonic energy, thereby enhancing particle removal from the wafers. Other embodiments are provided.
摘要翻译：一种使用旋转机构的晶片清洁器的方法和装置。将晶片放置在具有凹槽的载体3中以保持晶片之间的间隔。载体3和晶片被放置在具有清洁溶液的罐1中。喷嘴11用于将加压溶液引导到晶片上，使得它们在载体内旋转。在另一个实施例中，储罐1包括一个兆声换能器16.在第二实施例中，晶片在兆声波换能器16产生兆声波能量的同时旋转。晶片的旋转导致清洁溶液和兆声波能量均匀地作用在晶片上，并且进一步将晶片的边缘直接暴露于清洁溶液和兆声波能量，从而增强颗粒从晶片的去除。提供其他实施例。

59. 发明授权

US5506169A Method for reducing lateral dopant diffusion 失效
标题翻译：减少横向掺杂剂扩散的方法
公开(公告)号：US5506169A
公开(公告)日：1996-04-09
申请号：US326268
申请日：1994-10-20
申请人： Richard L. Guldi
发明人： Richard L. Guldi
IPC分类号： H01L21/22 , H01L21/302
CPC分类号： H01L21/22 , Y10S438/92
摘要： A process is disclosed for inhibiting lateral diffusion of dopants in a semiconductive material. At least one conductivity dependent region is formed in the semiconductor, and a blocking layer is provided in overlying relation with the conductivity dependent region. Interstitial sites or vacancies are introduced into the conductivity dependent region in accordance with the diffusion mechanism of a selected dopant, and dopant is diffused into the semiconductor in a direction that is substantially transverse to the semiconductor upper surface while inhibiting with the introduced interstitial sites or vacanies lateral diffusion of the dopant into the conductivity dependent region.
摘要翻译：公开了一种抑制半导体材料中掺杂剂的横向扩散的方法。在半导体中形成至少一个导电性相关区域，并且以与导电性依赖区域重叠的关系提供阻挡层。根据所选择的掺杂剂的扩散机理，将间隙位置或空位引入到导电性相关区域中，并且掺杂剂在基本横向于半导体上表面的方向上扩散到半导体中，同时抑制所引入的间隙位置或空位掺杂剂向导电性依赖区域的横向扩散。

60. 发明授权

US5334556A Method for improving gate oxide integrity using low temperature oxidation during source/drain anneal 失效
标题翻译：在源极/漏极退火期间使用低温氧化改善栅极氧化物完整性的方法
公开(公告)号：US5334556A
公开(公告)日：1994-08-02
申请号：US35868
申请日：1993-03-23
申请人： Richard L. Guldi
发明人： Richard L. Guldi
IPC分类号： H01L21/265 , H01L21/336 , H01L21/324
CPC分类号： H01L29/6659 , H01L21/26513 , Y10S148/003 , Y10S438/909
摘要： A method of annealing a partially fabricated semiconductor device which comprises the steps of annealing a partially fabricated semiconductor device in an atmosphere of an inert gas and an oxidizing gas. The inert gas is preferably one of nitrogen and argon and the oxidizing gas is preferably one or more of oxygen, hydrogen chloride and nitrogen trifluoride. The oxidizing gas is from about 1 to about 10% by volume of the atmosphere. The annealing step comprises maintaining the partially fabricated semiconductor device at a first temperature, preferably about 700.degree. C., for a first time period, preferably about 20 minutes, ramping up the temperature at a rate to a second temperature, preferably about 800.degree. C., maintaining the second temperature for a second time period, preferably about 20 minutes, ramping up the temperature at a rate, preferably about 10.degree. C./minute, to a third temperature, preferably about 900.degree. C. maintaining the third temperature for a third time period, preferably about 45 minutes, ramping down the temperature at a rate, preferably about 3.degree. C./minute, to a fourth temperature, preferably about 800.degree. then maintaining the fourth temperature for a fourth time period while maintaining the oxidizing gas in the atmosphere only during at least one of the first time period, the first ramping up, the second time period, the second ramping up, the ramping down or the fourth time period.
摘要翻译：一种对部分制造的半导体器件进行退火的方法，其包括在惰性气体和氧化气体的气氛中退火部分制造的半导体器件的步骤。惰性气体优选为氮和氩之一，氧化气体优选为氧，氯化氢和三氟化氮中的一种或多种。氧化气体是大气压的约1至约10体积％。退火步骤包括将部分制造的半导体器件保持在第一温度，优选约700℃，第一时间段，优选约20分钟，将温度升高至第二温度，优选约800℃ 将第二温度保持第二时间，优选约20分钟，将温度以优选约10℃/分钟的速率升高至第三温度，优选约900℃，将第三温度保持在第三时间段，优选约45分钟，将温度以优选约3℃/分钟的速度降低至第四温度，优选约800℃，然后将第四温度保持第四时间，同时保持氧化大气中的气体只有在第一时间段中的至少一个，第一次升高，第二时间段，第二次升高，升高或第四时间段期间。

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