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1. 发明授权

US5698038A Method for wafer carrier cleaning 失效
标题翻译：晶圆载体清洗方法
公开(公告)号：US5698038A
公开(公告)日：1997-12-16
申请号：US485409
申请日：1995-06-07
申请人： Richard L. Guldi , Robert F. Kunesh
发明人： Richard L. Guldi , Robert F. Kunesh
IPC分类号： H01L21/00 , B08B3/12 , B08B7/04
CPC分类号： H01L21/67057 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning a wafer carrier. A tank having sides and a bottom is provided. A weir is provided within the tank and having sides lower than the sides of the tank. Nozzles for outputting pressurized solution are provided within the weir. Laminar flow jets are also provided within the weir and are coupled to a pump for providing the laminar flow. To clean a wafer carrier, the carrier is placed within the weir. Solution is directed into the grooves of the wafer carrier using the nozzles. After the wafer carrier is cleaned using the nozzles, the nozzles are turned off. The laminar flow jets are activated using the laminar flow pump to provide a vertical laminar flow. This flow carries particles released from the wafer carrier by the pressurized solution upwards and over the weir. After a predetermined time period the cleaned wafer carrier is removed from the weir. Megasonic energy may be applied during the cleaning process to further enhance the removal of particles from the wafer carrier.
摘要翻译：一种清洗晶片载体的方法。提供具有侧面和底部的罐。堰体设置在油箱内，侧面低于油箱两侧。在堰内设置用于输出加压溶液的喷嘴。堰内还设有层流喷射器，并与泵连接以提供层流。为了清洁晶片载体，载体被放置在堰内。使用喷嘴将溶液引导到晶片载体的凹槽中。在使用喷嘴清洁晶片载体之后，关闭喷嘴。使用层流泵激活层流射流以提供垂直层流。这种流动将从晶片载体释放的颗粒通过加压溶液向上和超过堰。在预定时间段之后，将清洁的晶片载体从堰上移除。在清洁过程中可以施加超声波能量，以进一步增强颗粒从晶片载体的去除。

2. 发明授权

US5698040A Method for rotational wafer cleaning in solution 失效
标题翻译：溶液中旋转晶片清洗方法
公开(公告)号：US5698040A
公开(公告)日：1997-12-16
申请号：US473455
申请日：1995-06-07
申请人： Richard L. Guldi , Robert F. Kunesh
发明人： Richard L. Guldi , Robert F. Kunesh
IPC分类号： H01L21/00 , B08B3/02 , B08B3/12
CPC分类号： H01L21/67057 , H01L21/67051 , Y10S134/902
摘要： A method for a wafer cleaner using a rotation mechanism. Wafers are placed into a carrier 3 having grooves to maintain a spacing between the wafers. The carrier 3 and wafers are placed into a tank 1 with a cleaning solution. Nozzles 11 are used to direct pressurized solution against the wafers causing them to rotate within the carrier. In another embodiment, the tank 1 includes a megasonic transducer 16. In the second embodiment, the wafers are rotated while the megasonic transducer 16 is producing megasonic energy. The rotation of the wafers causes the cleaning solution and the megasonic energy to act on the wafers uniformly, and further exposes the edges of the wafers directly to the cleaning solution and the megasonic energy, thereby enhancing particle removal from the wafers. Other embodiments are provided.
摘要翻译：一种使用旋转机构的晶片清洁器的方法。将晶片放置在具有凹槽的载体3中以保持晶片之间的间隔。载体3和晶片被放置在具有清洁溶液的罐1中。喷嘴11用于将加压溶液引导到晶片上，使得它们在载体内旋转。在另一个实施例中，储罐1包括一个兆声换能器16.在第二实施例中，晶片在兆声波换能器16产生兆声波能量的同时旋转。晶片的旋转导致清洁溶液和兆声波能量均匀地作用在晶片上，并且进一步将晶片的边缘直接暴露于清洁溶液和兆声波能量，从而增强颗粒从晶片的去除。提供其他实施例。

3. 发明授权

US5520205A Apparatus for wafer cleaning with rotation 失效
标题翻译：用于旋转晶圆清洗的装置
公开(公告)号：US5520205A
公开(公告)日：1996-05-28
申请号：US269737
申请日：1994-07-01
申请人： Richard L. Guldi , Robert F. Kunesh
发明人： Richard L. Guldi , Robert F. Kunesh
IPC分类号： H01L21/00 , B08B3/12 , B08B11/02
CPC分类号： H01L21/67057 , H01L21/67051 , Y10S134/902
摘要： A method and apparatus for a wafer cleaner using a rotation mechanism. Wafers are placed into a carrier 3 having grooves to maintain a spacing between the wafers. The carrier 3 and wafers are placed into a tank 1 with a cleaning solution. Nozzles 11 are used to direct pressurized solution against the wafers causing them to rotate within the carrier. In another embodiment, the tank 1 includes a megasonic transducer 16. In the second embodiment, the wafers are rotated while the megasonic transducer 16 is producing megasonic energy. The rotation of the wafers causes the cleaning solution and the megasonic energy to act on the wafers uniformly, and further exposes the edges of the wafers directly to the cleaning solution and the megasonic energy, thereby enhancing particle removal from the wafers. Other embodiments are provided.
摘要翻译：一种使用旋转机构的晶片清洁器的方法和装置。将晶片放置在具有凹槽的载体3中以保持晶片之间的间隔。载体3和晶片被放置在具有清洁溶液的罐1中。喷嘴11用于将加压溶液引导到晶片上，使得它们在载体内旋转。在另一个实施例中，储罐1包括一个兆声换能器16.在第二实施例中，晶片在兆声波换能器16产生兆声波能量的同时旋转。晶片的旋转导致清洁溶液和兆声波能量均匀地作用在晶片上，并且进一步将晶片的边缘直接暴露于清洁溶液和兆声波能量，从而增强颗粒从晶片的去除。提供其他实施例。

4. 发明申请

US20090212793A1 STRUCTURES FOR TESTING AND LOCATING DEFECTS IN INTEGRATED CIRCUITS 有权
标题翻译：用于集成电路测试和定位缺陷的结构
公开(公告)号：US20090212793A1
公开(公告)日：2009-08-27
申请号：US12037687
申请日：2008-02-26
申请人： Richard L. Guldi , Toan Tran , Deepak A. Ramappa
发明人： Richard L. Guldi , Toan Tran , Deepak A. Ramappa
IPC分类号： G01R31/305 , H01L23/58
CPC分类号： H01L22/14 , G01R31/2884 , G01R31/307 , H01L22/20 , H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： A method for detecting defects during semiconductor device processing can include providing a substrate having a semiconductor comprising layer with electrically isolated application and test circuits are formed thereon, directing an electron current inducing beam to the test circuit; measuring a current between the first and the second contact pads in the test circuit; determining an electron beam induced current (EBIC); and identifying one or more defect locations in the test circuit based on the EBIC and a location of the electron beam corresponding to the EBIC. A test circuit can include a plurality of semiconductor devices connected in parallel, a first contact pad coupled to a first terminal of the semiconductor devices, and at least a second contact pad coupled to a substrate terminal associated with the semiconductor devices.
摘要翻译：用于在半导体器件处理期间检测缺陷的方法可以包括提供具有电隔离应用的具有半导体层的衬底，并且在其上形成测试电路，将电子电流感应束引导到测试电路; 测量测试电路中的第一和第二接触焊盘之间的电流; 确定电子束感应电流（EBIC）; 以及基于EBIC和对应于EBIC的电子束的位置来识别测试电路中的一个或多个缺陷位置。测试电路可以包括并联连接的多个半导体器件，耦合到半导体器件的第一端子的第一接触焊盘以及耦合到与半导体器件相关联的衬底端子的至少第二接触焊盘。

5. 发明授权

US07228193B2 Methods for detecting structure dependent process defects 有权
公开(公告)号：US07228193B2
公开(公告)日：2007-06-05
申请号：US11204143
申请日：2005-08-15
申请人： Richard L. Guldi , Jae H. Park , Deepak A. Ramappa
发明人： Richard L. Guldi , Jae H. Park , Deepak A. Ramappa
IPC分类号： G06F19/00
CPC分类号： G03F7/7065
摘要： Semiconductor devices formed on wafers are inspected using a master wafer. A subject wafer of a semiconductor design is provided. The subject wafer has dies wherein semiconductor devices of the semiconductor design are formed and at a stage of fabrication. A current layer of the subject wafer is scanned to obtain a scanned layer/image. A master wafer comprising individual wafer/layer maps is obtained. The scanned layer is compared with a corresponding layer map. Matching and non-matching defects are identified from repetitive defects within the corresponding layer map and defects within the scanned layer. The matching defects are reviewed to classify and or identify causality. The master wafer is then updated.

6. 发明授权

US07112540B2 Pretreatment for an electroplating process and an electroplating process in including the pretreatment 有权
标题翻译：包括预处理的电镀工艺和电镀工艺的预处理
公开(公告)号：US07112540B2
公开(公告)日：2006-09-26
申请号：US10766491
申请日：2004-01-28
申请人： Richard L. Guldi , Deepak Ramappa
发明人： Richard L. Guldi , Deepak Ramappa
IPC分类号： H01L21/31 , H01L23/52
CPC分类号： H01L21/76843 , H01L21/76856 , H01L21/76873
摘要： The present invention provides an electroplating process and a method for manufacturing an integrated circuit. The electroplating process includes, among other steps, placing a substrate 290 in an enclosure 200 being substantially devoid of unwanted contaminants and forming a material layer 310 over the substrate 290 within the enclosure 200, the enclosure 200 still being substantially devoid of the unwanted contaminants. The electroplating process further includes forming a thin layer of oxide 410 over the material layer 310 within the enclosure 200, the enclosure 200 still being substantially devoid of the unwanted contaminants during the forming the thin layer of oxide 410.
摘要翻译：本发明提供一种电镀工艺和一种用于制造集成电路的方法。除了其他步骤之外，电镀工艺还包括将衬底290放置在外壳200中，基本上没有不想要的污染物，并且在外壳200内的衬底290上形成材料层310，外壳200基本上没有不想要的污染物。电镀工艺还包括在外壳200内的材料层310上形成薄层的氧化物410，在形成薄层氧化物410期间，外壳200基本上没有不想要的污染物。

7. 发明授权

US07024950B2 Method for intelligent sampling of particulates in exhaust lines 有权
公开(公告)号：US07024950B2
公开(公告)日：2006-04-11
申请号：US09982656
申请日：2001-10-18
申请人： Richard L. Guldi , J. Michael Grobelny
发明人： Richard L. Guldi , J. Michael Grobelny
IPC分类号： G01N1/22 , G01N1/40 , G01N15/06 , G01N15/00 , H01L21/66
CPC分类号： H01L21/67253 , G01N1/2035 , G01N1/2202 , G01N15/0227 , G01N2001/2223 , G01N2015/0046 , G01N2015/0096 , G01N2015/0261
摘要： An in-situ particle monitor in an exhaust controls a particle sampler so that when a predetermined particle threshold is detected, the particle sampler is caused to gather samples from the exhaust in real-time. Electrical control signals are monitored to correlate variations in the signals with particle excursions for both analysis and sample collection triggering.

8. 发明授权

US06834117B1 X-ray defect detection in integrated circuit metallization 有权
标题翻译：集成电路金属化中的X射线缺陷检测
公开(公告)号：US06834117B1
公开(公告)日：2004-12-21
申请号：US09679796
申请日：2000-10-05
申请人： Satyavolu Papa Rao , Basab Chatterjee , Richard L. Guldi
发明人： Satyavolu Papa Rao , Basab Chatterjee , Richard L. Guldi
IPC分类号： G06K900
CPC分类号： G01N23/04 , H01L22/12
摘要： A system (25) for detecting defects in a semiconductor wafer (10), such defects including voids (V) present in metal conductors (2, 4) and plugs (7), is disclosed. An x-ray source (20) irradiates the wafer (10) through a first aperture array (24) having openings (26); a second aperture array (28) is located on the opposite side of the wafer (10) from the source (20), and has openings (30) that are aligned and registered with the openings (26) in the first aperture array (24). An array of x-ray detectors (31) is located adjacent to the second aperture array (28), with each detector (31) associated with one of the openings (30) of the second aperture array (28). The detectors (31) communicate signals regarding the magnitude of x-ray energy that is transmitted through wafer (10) at locations defined by the openings (26, 30) through aperture arrays (24, 28), to an analysis computer (34). A wafer translation system (32) indexes or otherwise moves the wafer (10) between the aperture arrays (24, 28). The analysis computer (34) generates an x-ray image of the wafer (10) from the detected x-ray energy, or alternatively compares the detected x-ray energy at locations of wafer (10) to automatically detect and distinguish defects.
摘要翻译：公开了一种用于检测半导体晶片（10）中的缺陷的系统（25），包括存在于金属导体（2,4）和插头（7）中的空隙（V）的缺陷。 X射线源（20）通过具有开口（26）的第一孔阵列（24）照射晶片（10）。第二孔径阵列（28）位于晶片（10）的与源极（20）相对的一侧上，并且具有与第一孔径阵列（24）中的开口（26）对准并对准的开口（30））。一组X射线检测器（31）位于第二孔径阵列（28）附近，每个检测器（31）与第二孔径阵列（28）的一个开口（30）相关联。检测器（31）将关于通过晶片（10）透射的x射线能量的大小的信号传送到通过孔阵列（24,28）由开口（26,30）限定的位置处的信号到分析计算机（34）。晶片平移系统（32）将晶片（10）指向或以其它方式移动在孔径阵列（24,28）之间。分析计算机（34）根据检测到的x射线能量产生晶片（10）的X射线图像，或者替代地比较晶片（10）的位置处的检测到的x射线能量，以自动检测和区分缺陷。

9. 发明授权

US06710364B2 Semiconductor wafer edge marking 有权
标题翻译：半导体晶圆边缘标记
公开(公告)号：US06710364B2
公开(公告)日：2004-03-23
申请号：US10178627
申请日：2002-06-20
申请人： Richard L. Guldi , Keith W. Melcher , John Williston
发明人： Richard L. Guldi , Keith W. Melcher , John Williston
IPC分类号： G01N2186
CPC分类号： H01L23/544 , B41M5/262 , H01L21/67282 , H01L2223/54413 , H01L2223/54433 , H01L2223/54493 , H01L2924/0002 , Y10S438/959 , H01L2924/00
摘要： The marking of identification and orientation information along the edge (E) of a semiconductor wafer (20, 20′) is disclosed. The information may be marked by way of laser marking at one or more locations (10) along a flat portion (14) or bevel (12t, 12b) of the edge (E) of the wafer (20, 20′). The wafer marking (10) may be encoded, for example by way of a 2-D bar code. A system (30) for reading the identification information from wafers (20, 20′) in a carrier (32) is also disclosed. The system (30) includes a sensor (36) for sensing reflected light from the wafer markings (10) along the wafer edge (E), and for decoding identification and orientation therefrom. A motor (38), under the control of feedback (RFB) from the sensor (36), rotates the wafers (20, 20′) by way of a roller (39) until the wafer marking (10) is in view by the sensor (36). A processing system (40), which includes a rotatable chuck (41) upon which the wafer (20, 20′) is placed, is also disclosed. The processing system (40) also includes a sensor (36) for sensing identification and orientation information from the wafer edge (E), and a process control computer (46) that receives signals corresponding to the identification information, for purposes of manufacturing data logging and process control.
摘要翻译：公开了沿着半导体晶片（20,20'）的边缘（E）的识别和取向信息的标记。信息可以通过沿着晶片（20,20'）的边缘（E）的平坦部分（14）或斜面（12t，12b）的一个或多个位置（10）处的激光标记来标记。晶片标记（10）可以例如通过2-D条形码进行编码。还公开了一种用于从载体（32）中的晶片（20,20'）读取识别信息的系统（30）。系统（30）包括用于从晶片边缘（E）感测来自晶片标记（10）的反射光并用于解码其识别和取向的传感器（36）。在来自传感器（36）的反馈（RFB）控制下的电动机（38）通过辊（39）旋转晶片（20,20'），直到晶片标记（10）由传感器（36）。还公开了一种包括可放置晶片（20,20'）的可旋转卡盘（41）的处理系统（40）。处理系统（40）还包括用于感测来自晶片边缘（E）的识别和取向信息的传感器（36），以及为了制造数据记录的目的而接收对应于识别信息的信号的过程控制计算机（46）和过程控制。

10. 发明授权

US06689686B2 System and method for electroplating fine geometries 有权
标题翻译：电镀精细几何的系统和方法
公开(公告)号：US06689686B2
公开(公告)日：2004-02-10
申请号：US10247000
申请日：2002-09-19
申请人： Richard L. Guldi , Wei-Yung Hsu
发明人： Richard L. Guldi , Wei-Yung Hsu
IPC分类号： H01L2144
CPC分类号： C25D17/001 , C25D5/04 , C25D5/18 , C25D7/123
摘要： An electroplating system is described which provides for the formation of a conductive layer on a workpiece. The current used to electroplate the workpiece is controlled by a controller. The rotation of the workpiece within a solution containing conductive material is controlled by a rotation controller. The current level and/or rotation of the workpiece is controlled in such a way that the non-uniform growth of large grains within the conductive film is minimized.
摘要翻译：描述了一种提供在工件上形成导电层的电镀系统。用于电镀工件的电流由控制器控制。在包含导电材料的溶液中的工件的旋转由旋转控制器控制。控制工件的当前水平和/或旋转，使得导电膜内大颗粒的不均匀生长最小化。

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