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51. 发明授权

US06508884B2 Wafer holder for semiconductor manufacturing apparatus, method of manufacturing wafer holder, and semiconductor manufacturing apparatus 有权
标题翻译：用于半导体制造装置的晶片保持器，晶片保持器的制造方法以及半导体制造装置
公开(公告)号：US06508884B2
公开(公告)日：2003-01-21
申请号：US09741477
申请日：2000-12-19
申请人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
发明人： Akira Kuibira , Hirohiko Nakata , Kenjiro Higaki , Masuhiro Natsuhara , Takashi Ishii , Yasuyuki Matsui
IPC分类号： C23C1600
CPC分类号： H01L21/6835 , C04B37/005 , C04B41/009 , C04B41/52 , C04B41/89 , C04B2237/06 , C04B2237/062 , C04B2237/064 , C04B2237/066 , C04B2237/08 , C04B2237/10 , C04B2237/122 , C04B2237/123 , C04B2237/125 , C04B2237/343 , C04B2237/366 , C04B2237/368 , C04B2237/52 , C04B2237/567 , C04B2237/62 , C04B2237/66 , C04B2237/704 , C04B2237/708 , C04B2237/72 , C04B2237/80 , H01L21/4857 , H01L21/67103 , C04B41/0072 , C04B41/4539 , C04B41/4572 , C04B41/5133 , C04B41/5022 , C04B35/581
摘要： A wafer holder for a semiconductor manufacturing apparatus that has a high heat conductivity and includes a conductive layer such as heater circuit pattern which can be formed with a high precision pattern, a method of manufacturing the wafer holder, and a semiconductor manufacturing apparatus having therein the wafer holder are provided. On a surface of a sintered aluminum nitride piece, paste containing metal particles is applied and fired to form a heater circuit pattern as a conductive layer. Between the surface of the sintered aluminum nitride piece having the heater circuit pattern formed thereon and another sintered aluminum nitride piece, a glass layer is provided as a joint layer to be heated for joining the sintered aluminum nitride pieces together.
摘要翻译：一种用于半导体制造装置的晶片保持器，其具有高导热性并且包括可以以高精度图案形成的加热器电路图案的导电层，制造晶片保持器的方法，以及其中具有提供晶片保持器。在烧结的氮化铝片的表面上，涂覆含有金属颗粒的糊状物并烧制以形成作为导电层的加热器电路图案。在其上形成有加热器电路图案的烧结氮化铝片的表面和另一个烧结的氮化铝片之间，设置玻璃层作为待烧结的接合层，以将烧结的氮化铝片接合在一起。

52. 发明授权

US5959389A Diamond-ZnO surface acoustic wave device 失效
标题翻译：金刚石 - ZnO表面声波装置
公开(公告)号：US5959389A
公开(公告)日：1999-09-28
申请号：US964469
申请日：1997-11-04
申请人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
发明人： Hideaki Nakahata , Tomoki Uemura , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shin-ichi Shikata
IPC分类号： H03H9/02 , H03H9/10 , H03H9/145
CPC分类号： H03H9/02582
摘要： A first surface acoustic wave device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention is a SAW device of "type A" device shown in FIG. 6A, wherein a parameter kh3=2.pi.(t.sub.A /.lambda.) is: 0.033.ltoreq.kh3.ltoreq.0.099, and wherein a parameter kh1=2.pi.(t.sub.Z /.lambda.) and a parameter kh2=2.pi.(t.sub.S /.lambda.) are given within a region ABCDEFGHIJKLA in a two-dimensional Cartesin coordinate graph of FIG. 1.
摘要翻译：根据本发明的波长λ（μm）的第二模式表面声波的第一表面声波装置是图1所示的“A型”装置的SAW装置。其中参数kh3 =2π（tA /λ）为：0.033≤kh3

53. 发明授权

US5891519A Surface acoustic wave device and diamond base material for the same 失效
标题翻译：表面声波装置和金刚石基材相同
公开(公告)号：US5891519A
公开(公告)日：1999-04-06
申请号：US839606
申请日：1997-04-15
申请人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
发明人： Shin-ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo
IPC分类号： H03H3/08 , H03H9/02 , H03H9/145 , H03H9/25 , H03H9/64
CPC分类号： H03H9/6436 , H03H3/08 , H03H9/02582 , H03H9/6433 , H03H9/6466 , Y10T428/24802 , Y10T428/24926 , Y10T428/24942 , Y10T428/24975 , Y10T428/265 , Y10T428/30
摘要： A diamond base material for surface acoustic wave device, which includes: a low-resistivity base material, and a high-resistivity diamond layer having a thickness of 5-50 .mu.m disposed on the low-resistivity base material.
摘要翻译：一种用于表面声波装置的金刚石基材，其包括：低电阻率基材和设置在低电阻率基材上的厚度为5-50μm的高电阻金刚石层。

54. 发明授权

US5888646A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5888646A
公开(公告)日：1999-03-30
申请号：US808956
申请日：1997-02-19
申请人： Yoshihiro Takahashi , Yasushi Yamamoto , Natsuhiko Sakairi , Shin-Ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi
发明人： Yoshihiro Takahashi , Yasushi Yamamoto , Natsuhiko Sakairi , Shin-Ichi Shikata , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/16
CPC分类号： H03H9/02582 , Y10T428/24926 , Y10T428/265 , Y10T428/30
摘要： A surface acoustic wave device comprises a diamond layer (12) or a substrate (11) with a diamond layer (12) formed thereon, an Al electrode (13) formed on the diamond layer (12), and a ZnO piezoelectric thin film layer (14) formed on the diamond layer (12) with the Al electrode (13) covered by the ZnO piezoelectric thin film layer (14). The ZnO piezoelectric thin film layer (14) has a thickness h1 within a range defined by 0.65.ltoreq.kh1.ltoreq.0.75 while the Al electrode (13) has a thickness h2 within a range defined by 0.03.ltoreq.kh2.ltoreq.0.04, where k is given by k=2 .pi./.lambda. and .lambda. represents an electrode period.
摘要翻译：表面声波装置包括金刚石层（12）或其上形成有金刚石层（12）的基板（11），形成在金刚石层（12）上的Al电极（13）和ZnO压电薄膜层（14），其上形成有由ZnO压电薄膜层（14）覆盖的Al电极（13）的金刚石层（12）上。 ZnO压电薄膜层（14）的厚度h1在0.65≤kh1≤75的范围内，而Al电极（13）的厚度h2在0.03≤kh2< = 0.04，其中k由k =2π/λ给出，λ表示电极周期。

55. 发明授权

US5814918A Diamond-ZnO surface acoustic wave device 失效
标题翻译：金刚石 - ZnO表面声波装置
公开(公告)号：US5814918A
公开(公告)日：1998-09-29
申请号：US689296
申请日：1996-08-07
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shinichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Hiroyuki Kitabayashi , Shinichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： The present invention directed to a SAW device comprising a diamond layer a ZnO layer and an SiO.sub.2 layer, which can be operated at the frequency of 2 GHz or higher, with superior durability and less energy loss. The SAW device for 2nd mode surface acoustic wave of a wavelength .lambda. (.mu.m) according to the present invention comprises: (i) a diamond layer, (ii) a ZnO layer formed on the diamond layer, the ZnO layer having a thickness t.sub.z, (iii) an interdigital transducer (IDT) formed over the ZnO layer, and (iv) a SiO.sub.2 layer formed over the interdigital transducer onto the ZnO layer, the SiO.sub.2 layer having a thickness of t.sub.s ; wherein parameters kh.sub.z =(2.pi./.lambda.)t.sub.z and kh.sub.s =(2.pi./.lambda.)t.sub.s are given within a region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A in a two-dimensional Cartesian coordinate graph having abscissa axis of kh.sub.z and ordinate axis of kh.sub.s, the outer edge of the region A-B-C-D-E-F-G-H-I-J-K-L-M-N-O-P-Q-R-A being given by a closed chain in the Cartesian coordinate, consisting of points A, B, C, D, E, F, G, H, I, J, K, L, M, N, O, P, Q and R and lines A-B, B-C, C-D, D-E, E-F, F-G, G-H, H-I, I-J, J-K, K-L, L-M, M-N, N-O, O-P, P-Q, Q-R and R-A, as shown in FIG. 1.
摘要翻译：本发明涉及一种SAW器件，其包括金刚石层，ZnO层和SiO 2层，其可以以2GHz或更高的频率工作，具有优异的耐久性和较少的能量损失。根据本发明的波长λ（μm）的第二模式表面声波的SAW器件包括：（i）金刚石层，（ii）在金刚石层上形成的ZnO层，ZnO层具有厚度tz ，（iii）在ZnO层上形成的叉指式换能器（IDT），以及（iv）在叉状换能器上形成在ZnO层上的SiO 2层，SiO 2层的厚度为ts; 其中参数khz =（2π/λ）tz和khs =（2π/λ）ts在具有khz的纵轴和khs的纵坐标轴的二维笛卡尔坐标图中的区域ABCDEFGHIJKLMNOPQRA内给出，区域ABCDEFGHIJKLMNOPQRA由笛卡尔坐标中的闭环提供，由点A，B，C，D，E，F，G，H，I，J，K，L，M，N，O，P，Q组成以及R和线AB，BC，CD，DE，EF，FG，GH，HI，IJ，JK，KL，LM，MN，NO，OP，PQ，QR和RA。 1。

56. 发明授权

US5565725A Surface acoustic wave device 失效
标题翻译：表面声波装置
公开(公告)号：US5565725A
公开(公告)日：1996-10-15
申请号：US429401
申请日：1995-04-26
申请人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
发明人： Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Akihiro Hachigo , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H01L41/08
CPC分类号： H03H9/02582
摘要： A SAW device which includes at least, diamond, an LiNbO.sub.3 layer disposed on the diamond, and an IDT provided so as to contact the LiNbO.sub.3 layer; and utilizes SAW of an "n-th" mode (n=0, 1 or 2) having a wavelength of .lambda..sub.n (.mu.m), wherein a parameter of kh.sub.1 =2.pi.(t.sub.1 /.lambda..sub.n) is in a specific range provided that the thickness of the LiNbO.sub.3 layer is denoted by t.sub.1 (.mu.m).
摘要翻译：至少包括金刚石，设置在金刚石上的LiNbO 3层的SAW器件和设置成与LiNbO 3层接触的IDT; 并且使用波长为λn（μm）的“n”模式（n = 0,1或2）的SAW，其中kh1 =2π（t1 /λn）的参数在特定范围内条件是LiNbO 3层的厚度由t1（μm）表示。

57. 发明授权

US5565724A Orientational material, orientational substrate and surface acoustic wave device 失效
标题翻译：定向材料，取向基板和表面声波装置
公开(公告)号：US5565724A
公开(公告)日：1996-10-15
申请号：US363457
申请日：1994-12-22
申请人： Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
发明人： Akihiro Hachigo , Hideaki Nakahata , Kenjiro Higaki , Satoshi Fujii , Shin-ichi Shikata
IPC分类号： H03H9/145 , H03H9/02 , H03H9/25 , H01L41/08
CPC分类号： H03H9/02582
摘要： An orientational material including: diamond, and a ZnO film disposed on a surface of (111) orientational diamond provided by the diamond. Such an orientational material may suitably be used as a component for fabricating a surface acoustic wave device utilizing diamond.
摘要翻译：取向材料包括金刚石和设置在由钻石提供的（111）取向金刚石的表面上的ZnO膜。这种定向材料可以适当地用作制造使用金刚石的声表面波器件的组件。

58. 发明授权

US07649270B2 Collective substrate, semiconductor element mount, semiconductor device, imaging device, light emitting diode component and light emitting diode 有权
标题翻译：集体基板，半导体元件安装件，半导体器件，成像器件，发光二极管元件和发光二极管
公开(公告)号：US07649270B2
公开(公告)日：2010-01-19
申请号：US10589747
申请日：2005-07-21
申请人： Kenjiro Higaki , Daisuke Takagi , Sadamu Ishidu , Yasushi Tsuzuki
发明人： Kenjiro Higaki , Daisuke Takagi , Sadamu Ishidu , Yasushi Tsuzuki
IPC分类号： H01L23/29
CPC分类号： H01L33/62 , H01L23/49827 , H01L24/97 , H01L31/02002 , H01L31/0203 , H01L33/486 , H01L2224/48091 , H01L2224/48227 , H01L2924/01004 , H01L2924/01046 , H01L2924/01067 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01087 , H01L2924/09701 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2924/16195 , H01L2924/3025 , H05K1/0306 , H05K3/0052 , H05K3/403 , H05K2201/09181 , H05K2201/09827 , H01L2924/00014 , H01L2924/00
摘要： A collective substrate (1) is produced by firing a ceramic green sheet and forming through-holes (11) in the resulting substrate. The through-holes (11) each have an interior surface including taper surfaces (11b, 11c) which are tapered as having an opening size progressively decreasing from a main surface (21) and an external connection surface (22) toward a minimum size hole portion (11a). The taper surfaces (11b, 11c) respectively form obtuse angles θ1, θ2 with the main surface (21) and the external connection surface (22). A semiconductor element mount (BL) includes an insulative member (2) cut out of the collective substrate (1). An imaging device (PE2) includes an imaging element (PE1) mounted in a region surrounded by a frame (4) which is bonded to the main surface (21) of the insulative member (2) and closed by a cover (FL). A light emitting diode component (LE2) includes a light emitting element (LE1) mounted on the main surface (21) of the insulative member (2) with the minimum size hole portion (11a) of the through-hole being filled with an electrically conductive material (33a), the light emitting element being sealed with a fluorescent material and/or a protective resin (FR). A light emitting diode (LE3) includes the light emitting diode component (LE2) mounted in a package (7).
摘要翻译：通过烧制陶瓷生片并在所得到的衬底中形成通孔（11）来制备集合衬底（1）。通孔（11）各自具有包括锥形表面（11b，11c）的内表面，锥形表面（11b，11c）具有从主表面（21）和外部连接表面（22）朝向最小尺寸孔逐渐减小的开口尺寸的锥形部分（11a）。锥形表面（11b，11c）分别与主表面（21）和外部连接表面（22）形成钝角θ1，θ2。半导体元件安装件（BL）包括从集体基板（1）切出的绝缘构件（2）。成像装置（PE2）包括安装在被框架（4）包围的区域中的成像元件（PE1），该框架结合到绝缘构件（2）的主表面（21）并由盖（FL）封闭。发光二极管部件（LE2）包括安装在绝缘构件（2）的主表面（21）上的发光元件（LE1），其中通孔的最小尺寸孔部分（11a）填充有电导电材料（33a），发光元件用荧光材料和/或保护树脂（FR）密封。发光二极管（LE3）包括安装在封装（7）中的发光二极管部件（LE2）。

59. 发明申请

US20080105894A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20080105894A1
公开(公告)日：2008-05-08
申请号：US11929387
申请日：2007-10-30
申请人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
发明人： Sadamu Ishidu , Kenjiro Higaki , Takashi Ishii , Yasushi Tsuzuki
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L33/46 , H01L33/62 , H01L33/641 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A semiconductor device for adequately removing heat generated by a semiconductor element is provided. A semiconductor device 100 is equipped with a substrate 2, having a bottom surface 2b and an element mounting surface 2a which is positioned on the opposite side of bottom surface 2b, and a semiconductor element 1, having a main surface 1a which is mounted onto element mounting surface 2a. With L being the length in the long direction of main surface 1 and H being the distance between bottom surface 2b and element mounting surface 2a, the ratio H/L is 0.3 or greater. When the semiconductor element is a light emitting element, element mounting surface 2a is a cavity 2u, and element 1 is provided in cavity 2u. A metal layer 13 is provided on the surface of cavity 2u. In addition, when an electrode 32 which connects to an external part is provided on main surface 1a, on the cavity side of the part which connects with electrode 32, main surface 1a is provided with a groove. The groove is for preventing outward flow of connection member 34 of electrode 32.

60. 发明授权

US07196356B2 Submount and semiconductor device 有权
标题翻译：底座和半导体器件
公开(公告)号：US07196356B2
公开(公告)日：2007-03-27
申请号：US10520385
申请日：2003-07-30
申请人： Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
发明人： Takashi Ishii , Kenjiro Higaki , Yasushi Tsuzuki
IPC分类号： H01L31/12
CPC分类号： B23K35/0238 , B23K1/0016 , B23K1/19 , B23K35/262 , B23K35/268 , B23K35/3006 , B23K35/3013 , B23K2101/40 , B32B15/01 , B32B15/018 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/13111 , H01L2224/29109 , H01L2224/29111 , H01L2224/8319 , H01L2224/83801 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01088 , H01L2924/0132 , H01L2924/014 , H01L2924/10329 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01S5/02272 , H01L2924/01028 , H01L2924/00 , H01L2224/0401
摘要： The present invention provides a submount that allows a semiconductor light-emitting element to be attached with a high bonding strength.A submount 3 is equipped with a substrate 3 and a solder layer 8 formed on a primary surface 4f of the substrate 4. The density of the solder layer 8 is at least 50% and no more than 99.9% of the theoretical density of the material used in the solder layer 8. The solder layer 8 contains at least one of the following list: gold-tin alloy; silver-tin alloy; and lead-tin alloy. The solder layer 8 before it is melted is formed on the substrate 4 and includes an Ag film 8b and an Sn film 8a formed on the Ag film 8b. The submount 3 further includes an Au film 6 formed between the substrate 4 and the solder layer 8.
摘要翻译：本发明提供一种能够以高接合强度附着半导体发光元件的基座。

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