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51. 发明授权

US08025813B2 Chemical mechanical polishing composition and methods relating thereto 有权
标题翻译：化学机械抛光组合物及其相关方法
公开(公告)号：US08025813B2
公开(公告)日：2011-09-27
申请号：US12617140
申请日：2009-11-12
申请人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
发明人： Zhendong Liu , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC分类号： C09K13/00
CPC分类号： C09G1/02 , H01L21/31053
摘要： A chemical mechanical polishing composition useful for chemical mechanical polishing of a substrate, wherein the substrate comprises a silicon oxide material and a silicon nitride material; and methods of making and using the chemical mechanical polishing composition. The chemical mechanical polishing composition comprises, as initial components: at least one of a first substance and a second substance; wherein the first substance is according to formula I wherein the second substance is according to formula II an abrasive; and water.
摘要翻译：一种用于基材的化学机械抛光的化学机械抛光组合物，其中所述基材包括氧化硅材料和氮化硅材料; 以及制造和使用化学机械抛光组合物的方法。化学机械抛光组合物包含作为初始成分的第一物质和第二物质中的至少一种; 其中所述第一物质是根据式I，其中所述第二物质是根据式II的研磨剂; 和水。

52. 发明授权

US07981316B2 Selective barrier metal polishing method 有权
标题翻译：选择性屏障金属抛光方法
公开(公告)号：US07981316B2
公开(公告)日：2011-07-19
申请号：US11975804
申请日：2007-10-22
申请人： Zhendong Liu , Ross E. Barker, II
发明人： Zhendong Liu , Ross E. Barker, II
IPC分类号： C09K13/00 , C09K13/04 , C09K13/06 , H01L21/302
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L21/7684
摘要： The polishing method uses a polishing solution for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.
摘要翻译：抛光方法使用在互连金属和电介质存在下去除阻挡材料的抛光溶液。抛光溶液以重量百分比计包含0.1至10种过氧化氢，至少一种选自硝酸，硫酸，盐酸和磷酸的pH调节剂，用于将抛光溶液的pH值调节至小于 3，至少含有0.0025的苯并三唑抑制剂，用于降低互连金属的去除速率，0至10表面活性剂，0.01至10个平均粒度小于50nm的胶体二氧化硅，余量为水和附带杂质。抛光溶液的氮化钽材料至铜选择性为至少3比1，氮化钽至TEOS选择性为至少3比1。

53. 发明申请

US20100252417A1 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
标题翻译：高压RF-DC溅射和改善膜过程的均匀性和步骤的方法
公开(公告)号：US20100252417A1
公开(公告)日：2010-10-07
申请号：US12754473
申请日：2010-04-05
申请人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
发明人： Adolph Miller Allen , Lara Hawrylchak , Zhigang Xie , Muhammad M. Rasheed , Rongjun Wang , Xianmin Tang , Zhendong Liu , Tza-Jing Gung , Srinivas Gandikota , Mei Chang , Michael S. Cox , Donny Young , Kirankumar Savandaiah , Zhenbin Ge
IPC分类号： C23C14/34
CPC分类号： C23C14/564 , C23C14/345 , C23C14/3492 , C23C14/35 , C23C14/548 , H01J37/32642 , H01J37/3405 , H01J37/3408 , H01J37/3441 , H01J37/3455
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.
摘要翻译：本发明的实施例通常提供用于执行物理气相沉积（PVD）工艺的处理室和沉积多组分膜的方法。处理室可以包括：改进的RF馈送配置以减少任何驻波效应; 改进的磁控管设计，以增强RF等离子体均匀性，沉积膜组成和厚度均匀性; 改进的衬底偏置结构以改善工艺控制; 以及改进的工艺组件设计，以改善衬底临界表面附近的RF场均匀性。该方法包括使用耦合到多组分靶的RF电源在室的处理区域中形成等离子体，相对于多组分靶物平移磁控管，其中磁控管相对于中心点位于第一位置的多组分靶，同时磁控管正在平移并且形成等离子体，并且在腔室中的基底上沉积多组分膜。

54. 发明申请

US20080116067A1 PHYSICAL VAPOR DEPOSITION CHAMBER HAVING AN ADJUSTABLE TARGET 审中-公开
标题翻译：具有可调节目标的物理蒸气沉积室
公开(公告)号：US20080116067A1
公开(公告)日：2008-05-22
申请号：US11950881
申请日：2007-12-05
申请人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
发明人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
IPC分类号： C23C14/34
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/352 , C23C14/564 , H01J37/32568 , H01J37/32733 , H01J37/3455
摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal and at least one moveable tilted target. Embodiments of the invention facilitate deposition of highly uniform thin films.
摘要翻译：本发明涉及具有可旋转衬底基座和至少一个可移动倾斜目标的物理气相沉积（PVD）室。本发明的实施方案有利于沉积高度均匀的薄膜。

55. 发明授权

US07300602B2 Selective barrier metal polishing solution 有权
标题翻译：选择性屏障金属抛光液
公开(公告)号：US07300602B2
公开(公告)日：2007-11-27
申请号：US10349792
申请日：2003-01-23
申请人： Zhendong Liu , Ross E. Barker, II
发明人： Zhendong Liu , Ross E. Barker, II
IPC分类号： C09K13/00 , C09K13/04 , C09K13/06 , H01L21/302
CPC分类号： C09G1/02 , C09K3/1409 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L21/7684
摘要： The polishing solution is useful for removing barrier materials in the presence of interconnect metals and dielectrics. The polishing solution comprises, by weight percent, 0.1 to 10 hydrogen peroxide, at least one pH adjusting agent selected from the group consisting of nitric acid, sulfuric acid, hydrochloric acid and phosphoric acid for adjusting a pH level of the polishing solution to less than 3, at least 0.0025 benzotriazole inhibitor for reducing removal rate of the interconnect metals, 0 to 10 surfactant, 0.01 to 10 colloidal silica having an average particle size of less than 50 nm and balance water and incidental impurities. The polishing solution has a tantalum nitride material to copper selectivity of at least 3 to 1 and a tantalum nitride to TEOS selectivity of at least 3 to 1.
摘要翻译：抛光溶液可用于在存在互连金属和电介质的情况下去除阻挡材料。抛光溶液以重量百分比计包含0.1至10种过氧化氢，至少一种选自硝酸，硫酸，盐酸和磷酸的pH调节剂，用于将抛光溶液的pH值调节至小于 3，至少含有0.0025的苯并三唑抑制剂，用于降低互连金属的去除速率，0至10表面活性剂，0.01至10个平均粒度小于50nm的胶体二氧化硅，余量为水和附带杂质。抛光溶液的氮化钽材料至铜选择性为至少3比1，氮化钽至TEOS选择性为至少3比1。

56. 发明申请

US20070095651A1 Protective offset sputtering 失效
公开(公告)号：US20070095651A1
公开(公告)日：2007-05-03
申请号：US11389610
申请日：2006-03-23
申请人： Mengqi Ye , Zhendong Liu , Peijun Ding
发明人： Mengqi Ye , Zhendong Liu , Peijun Ding
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： H01L21/67011 , C23C14/225 , C23C14/35 , C23C14/505 , H01J37/3408 , H01J37/3423 , H01J37/3455
摘要： Sputtering in a physical vapor deposition (PVD) chamber may, in one embodiment, utilize a target laterally offset from and tilted with respect to the substrate. In another aspect, target power may be reduced to enhance film protection. In yet another aspect, magnetron magnets may be relatively strong and well balanced to enhance film protection. In another aspect, a shutter may be provided to protect the substrate in start up conditions. Other embodiments are described and claimed.

57. 发明申请

US20060163530A1 Corrosion-resistant barrier polishing solution 有权
标题翻译：耐腐蚀屏障抛光液
公开(公告)号：US20060163530A1
公开(公告)日：2006-07-27
申请号：US11044769
申请日：2005-01-26
申请人： Zhendong Liu
发明人： Zhendong Liu
IPC分类号： C09K13/00 , C03C15/00 , H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The polishing solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 0.0005 to 5 weight percent of at least one nonferrous accelerator selected from the group of a complexing agent for complexing the nonferrous metal and a water-soluble polymer containing an acrylic acid functional group and having a number average molecular weight of 100 to 1,000,000, 0 to 50 weight percent abrasive and balance water at a pH less than 7.
摘要翻译：在至少一种具有有限的电介质腐蚀的有色互连金属的存在下，抛光溶液可用于去除阻挡材料。抛光溶液含有0至20重量％的氧化剂，至少0.001重量％的用于降低有色互连金属去除速率的抑制剂，0.0005至5重量％的至少一种非铁质促进剂，其选自用于络合有色金属的络合剂金属和含有丙烯酸官能团的水溶性聚合物，其数均分子量为100至1,000,000，0至50重量％的磨料和平衡的水，其pH值小于7。

58. 发明授权

US07051902B2 Automatic valve assembly for a water cooler reservoir 有权
标题翻译：水冷却器水箱的自动阀组件
公开(公告)号：US07051902B2
公开(公告)日：2006-05-30
申请号：US10791769
申请日：2004-03-04
申请人： Dennis Rivard , Zhendong Liu , Fan Kun
发明人： Dennis Rivard , Zhendong Liu , Fan Kun
IPC分类号： B67D5/62
CPC分类号： B67D3/0032 , B67D3/0025 , B67D3/0038
摘要： An automatic valve assembly for a water cooler having a reservoir of the type that has its upper end generally sealed to the atmosphere by a water bottle adapter that receives and supports an inverted water bottle. The valve assembly comprises a ventilation passageway that permits air to enter the reservoir, and an actuator arm hingedly mounted within the interior of the water cooler. The actuator arm is operable to move between an open and a closed position in response to changing water levels within the reservoir. When in its open position the actuator arm allows the unrestricted passage of air into the reservoir through the ventilation passageway. When in its closed position the actuator arm restricts the flow of air and fluids through the ventilation passageway.
摘要翻译：一种用于水冷却器的自动阀组件，其具有一种储存器，该储存器的上端通过接收和支撑倒水瓶的水瓶适配器大致密封于大气。阀组件包括允许空气进入储存器的通风通道和铰链地安装在水冷却器内部的致动器臂。致动器臂可操作以响应于储存器内的水位变化而在打开和关闭位置之间移动。当处于其打开位置时，致动器臂允许空气通过通风通道不受限制地通入储存器。当处于其关闭位置时，致动器臂限制空气和流体通过通风通道的流动。

59. 发明申请

US20060096857A1 Physical vapor deposition chamber having a rotatable substrate pedestal 审中-公开
标题翻译：物理气相沉积室具有可旋转的基板基座
公开(公告)号：US20060096857A1
公开(公告)日：2006-05-11
申请号：US10984265
申请日：2004-11-08
申请人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
发明人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/352 , C23C14/564 , H01J37/32568 , H01J37/32733 , H01J37/3455
摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal. Embodiments of the invention facilitate deposition of highly uniform thin films. In further embodiments, one or more sputtering targets are movably disposed above the pedestal. The orientation of the targets relative to the pedestal may be adjusted laterally, vertically or angularly. In one embodiment, the target may be adjusted between angles of about 0 to 45 degreees relative to an axis of pedestal rotation.
摘要翻译：本发明涉及具有可转动的基板底座的物理气相沉积（PVD）室。本发明的实施方案有利于沉积高度均匀的薄膜。在另外的实施例中，一个或多个溅射靶可移动地设置在基座上方。目标相对于基座的取向可以横向，垂直或有角度地调整。在一个实施例中，可以相对于基座旋转轴线在约0至45度的角度之间调整目标。

60. 发明申请

US20060096851A1 Physical vapor deposition chamber having an adjustable target 审中-公开
标题翻译：具有可调目标的物理气相沉积室
公开(公告)号：US20060096851A1
公开(公告)日：2006-05-11
申请号：US10984291
申请日：2004-11-08
申请人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
发明人： Ilya Lavitsky , Michael Rosenstein , Goichi Yoshidome , Hougong Wang , Zhendong Liu , Mengqi Ye
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： H01J37/3408 , C23C14/35 , C23C14/352 , C23C14/564 , H01J37/32568 , H01J37/32733 , H01J37/3455
摘要： The invention relates to physical vapor deposition (PVD) chambers having a rotatable substrate pedestal and at least one moveable tilted target. Embodiments of the invention facilitate deposition of highly uniform thin films.
摘要翻译：本发明涉及具有可旋转衬底基座和至少一个可移动倾斜目标的物理气相沉积（PVD）室。本发明的实施方案有利于沉积高度均匀的薄膜。

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