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51. 发明授权

US08575599B2 Compound for organic thin film transistor and organic thin film transistor using the same 有权
标题翻译：用于有机薄膜晶体管的化合物和使用其的有机薄膜晶体管
公开(公告)号：US08575599B2
公开(公告)日：2013-11-05
申请号：US13057820
申请日：2009-08-05
申请人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
发明人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura
IPC分类号： H01L35/24
CPC分类号： C07C15/20 , C07C43/2055 , C07C2603/52 , H01L51/0055 , H01L51/0541 , H01L51/0545 , H01L51/0558
摘要： A compound for an organic thin film transistor having a structure of the following formula (1): wherein R1 to R6 are independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 30 carbon atoms, a haloalkyl group having 1 to 30 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a haloalkoxy group having 1 to 30 carbon atoms, an alkylthio group having 1 to 30 carbon atoms, a haloalkylthio group having 1 to 30 carbon atoms, an alkylamino group having 1 to 30 carbon atoms, a dialkylamino group having 2 to 60 carbon atoms (the alkyl groups may be combined with each other to form a ring structure containing the nitrogen atom), an alkylsulfonyl group having 1 to 30 carbon atoms, a haloalkylsulfonyl group having 1 to 30 carbon atoms, an aromatic hydrocarbon group having 6 to 60 carbon atoms, an aromatic heterocyclic group having 3 to 60 carbon atoms, an alkylsilyl group having 3 to 20 carbon atoms, an alkylsilylacetylene group having 5 to 60 carbon atoms or a cyano group, which each may have a substituent, provided that the compound in which all of R1 to R6 are a hydrogen atom is excluded.
摘要翻译：一种具有下式（1）结构的有机薄膜晶体管的化合物：其中R 1至R 6独立地为氢原子，卤素原子，具有1至30个碳原子的烷基，具有1至30个碳原子的卤代烷基碳原子，碳原子数1〜30的烷氧基，碳原子数1〜30的卤代烷氧基，碳原子数1〜30的烷硫基，碳原子数1〜30的卤代烷硫基，碳原子数为1〜30的烷基氨基碳原子，碳原子数2〜60的二烷基氨基（烷基可以相互结合形成含有氮原子的环结构），碳原子数1〜30的烷基磺酰基，碳原子数1〜30的卤代烷基磺酰基碳原子数为6〜60的芳香族烃基，碳原子数3〜60的芳香族杂环基，碳原子数3〜20的烷基甲硅烷基，碳原子数5〜60的烷基甲硅烷基乙炔基或氰基，其各自可以具有取代基，条件是其中R1至R6全部为氢原子的化合物被排除。

52. 发明授权

US08330147B2 Organic thin film transistor and organic thin film light emitting transistor having organic semiconductor compound with divalent aromatic hydrocarbon group and divalent aromatic heterocyclic group 有权
标题翻译：有机薄膜晶体管和具有二价芳香族烃基和二价芳族杂环基团的有机半导体化合物的有机薄膜发光晶体管
公开(公告)号：US08330147B2
公开(公告)日：2012-12-11
申请号：US12517422
申请日：2007-11-28
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L29/08 , H01L35/24 , H01L51/00 , H01L51/40 , C07C15/12 , C07C13/48
CPC分类号： H01L51/5296 , H01L51/0022 , H01L51/0051 , H01L51/0068 , H01L51/0071 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加电压，其中，所述有机半导体层在其中央包含具有芳香族杂环基的规定的有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

53. 发明申请

US20120261676A1 SiC FIELD EFFECT TRANSISTOR 有权
标题翻译： SiC场效应晶体管
公开(公告)号：US20120261676A1
公开(公告)日：2012-10-18
申请号：US13518650
申请日：2010-12-24
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78 , H01L29/12
CPC分类号： H01L29/7813 , H01L29/1608 , H01L29/165 , H01L29/41741 , H01L29/41766 , H01L29/43 , H01L29/47 , H01L29/66068 , H01L29/7803 , H01L29/7806 , H01L29/8618 , H01L29/872
摘要： A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.
摘要翻译： SiC场效应晶体管包括：SiC半导体层; 以及包括半导体层中的第一导电型源极区域的MIS晶体管结构，与源极区域接触的半导体层中的第二导电类型体区域，与体区域接触的半导体层中的第一导电型漂移区域与所述体区相对的栅极电极，其具有插入在所述电极和所述体区之间的栅极绝缘膜，用于在所述体区中形成沟道，以使所述电流在所述漂移区域和所述源极区域之间流动，以及阻挡层形成层与漂移区接触以通过与漂移区的接触而形成结屏障，所述结屏障低于由身体区域和漂移区域之间的结点限定的体二极管的扩散电位。

54. 发明授权

US08287927B2 Processed product of fenugreek seeds and method for producing the same 有权
标题翻译：葫芦巴种子的加工产品及其生产方法
公开(公告)号：US08287927B2
公开(公告)日：2012-10-16
申请号：US12596406
申请日：2008-04-17
申请人： Yuki Nakano , Shohei Hoshino , Jinji Shono , Nobuaki Tsuge
发明人： Yuki Nakano , Shohei Hoshino , Jinji Shono , Nobuaki Tsuge
IPC分类号： A61K36/00
CPC分类号： C12P1/00 , A23L11/33 , A23L33/105 , A61K36/48
摘要： It is an object of the present invention to enhance the α-amylase inhibitory activity of a fenugreek seed component. According to the present invention, the bitter taste of fenugreek seeds can be collaterally reduced.The present invention relates to a processed product of fenugreek seeds obtained by allowing β-glucosidase to act on a fenugreek seed-derived material and the like, and the method for producing the same.
摘要翻译：本发明的目的是提高葫芦巴种子成分的α-淀粉酶抑制活性。根据本发明，葫芦巴种子的苦味可以相应减少。本发明涉及通过使β-葡糖苷酶作用于葫芦巴种子衍生物质等而得到的葫芦巴种子的加工品及其制造方法。

55. 发明授权

US08069646B2 Gas turbine system having an air intake bypass system and an air discharge bypass system 有权
标题翻译：具有进气旁通系统和排气旁路系统的燃气轮机系统
公开(公告)号：US08069646B2
公开(公告)日：2011-12-06
申请号：US11849499
申请日：2007-09-04
申请人： Yuki Nakano , Yukinori Katagiri
发明人： Yuki Nakano , Yukinori Katagiri
IPC分类号： F02G1/00 , F02G3/00
CPC分类号： F02C3/30 , F02C3/305 , F02C7/08 , F05D2260/212 , F05D2270/053
摘要： A pressure vessel bypass valve forms a bypass system for enabling a part of the air compressed by a compressor to directly flow into a combustor while preventing the part of the air from flowing through a humidification tower and a recuperator. A turbine bypass valve forms another bypass system for enabling a part of a humidified air to be discharged to an exhaust duct after a heat exchange between the humidified air and a turbine exhaust gas is performed in the recuperator while preventing the part of the humidified air from flowing through a turbine. A turbine control system controls the bypass valves to be opened and closed in accordance with increase and decrease of the load.
摘要翻译：压力容器旁路阀形成旁路系统，以使由压缩机压缩的一部分空气能够直接流入燃烧器，同时防止空气的一部分流过加湿塔和换热器。涡轮旁通阀形成另一个旁通系统，用于在加热空气和涡轮机排气之间在换热器中进行热交换之后，使一部分加湿空气排放到排气管道，同时防止加湿空气的一部分流经涡轮机。涡轮控制系统根据负载的增减来控制旁通阀的打开和关闭。

56. 发明申请

US20110210319A1 COMPOUND FOR ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR USING THE SAME 有权
标题翻译：有机薄膜晶体管及其有机薄膜晶体管的化合物
公开(公告)号：US20110210319A1
公开(公告)日：2011-09-01
申请号：US13060780
申请日：2009-08-28
申请人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura , Hirofumi Kondo
发明人： Yuki Nakano , Masatoshi Saito , Hiroaki Nakamura , Hirofumi Kondo
IPC分类号： H01L51/52 , H01L51/10 , C07C43/20 , C07D495/04 , C07C13/66
CPC分类号： H01L51/0074 , C07C15/20 , C07C22/08 , C07C25/22 , C07C43/20 , C07C211/61 , C07C255/52 , C07C317/14 , C07C321/28 , C07C2603/24 , C07C2603/54 , C07D207/06 , C07D495/04 , C07F7/0805 , C07F7/0807 , C07F7/0812 , C07F7/0814 , H01L51/0056 , H01L51/0072 , H01L51/0076 , H01L51/0541 , H01L51/0545
摘要： A compound for an organic thin film transistor represented by the following formula (1): wherein at least one pair of adjacent two groups of R1, R3, R5 and R7 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded; and at least one pair of adjacent two groups of R2, R4, R6 and R8 is bonded to each other to form a substituted or unsubstituted aromatic hydrocarbon ring having 6 to 60 carbon atoms or a substituted or unsubstituted aromatic heterocyclic ring having 3 to 60 carbon atoms, the ring being fused to the ring to which the groups are bonded.
摘要翻译：一种由下式（1）表示的有机薄膜晶体管的化合物：其中R 1，R 3，R 5和R 7的至少一对相邻的两个基团彼此键合以形成具有6个至60个碳原子或取代或未取代的碳原子数为3〜60的芳族杂环，该环与基团键合的环稠合; 并且R 2，R 4，R 6和R 8中的至少一对相邻的两个基团彼此键合以形成具有6至60个碳原子的取代或未取代的芳族烃环或具有3至60个碳的取代或未取代的芳族杂环所述环与所述基团键合的环稠合。

57. 发明申请

US20110024831A1 SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110024831A1
公开(公告)日：2011-02-03
申请号：US12934012
申请日：2009-03-26
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/0465 , H01L29/0623 , H01L29/063 , H01L29/1095 , H01L29/1608 , H01L29/36 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7827
摘要： A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), and an n-type semiconductor region (14). The trench (3) is formed so as to penetrate through the p-type semiconductor layer (13) and to reach the second n-type semiconductor layer (12). The p-type semiconductor layer (13) includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench (3) is. Such structure allows suppressing dielectric breakdown in the gate insulating layer (5).
摘要翻译：半导体器件（A1）包括具有形成在其上的沟槽（3）的第一面和与第一面相反的第二面的半导体层，栅极（41）和栅极绝缘层（5）。半导体层包括第一n型半导体层（11），第二n型半导体层（12），p型半导体层（13）和n型半导体区域（14）。沟槽（3）形成为穿过p型半导体层（13）并到达第二n型半导体层（12）。 p型半导体层（13）包括延伸到比沟槽（3）更靠近半导体层的第二面的位置的延伸部分。这种结构允许抑制栅绝缘层（5）中的电介质击穿。

58. 发明申请

US20100197674A1 OXOPYRAZINE DERIVATIVE AND HERBICIDE 有权
标题翻译：氧化吡啶衍生物和除草剂
公开(公告)号：US20100197674A1
公开(公告)日：2010-08-05
申请号：US12671411
申请日：2008-07-31
申请人： Ryuji Tamai , Minoru Ito , Masami Kobayashi , Takashi Mitsunari , Yuki Nakano
发明人： Ryuji Tamai , Minoru Ito , Masami Kobayashi , Takashi Mitsunari , Yuki Nakano
IPC分类号： A01N43/84 , C07D241/52 , A01N43/60 , C07D413/06 , C07D417/04 , A01P13/00
CPC分类号： C07D471/04 , A01N43/60 , A01N43/653 , A01N43/66 , A01N43/68 , A01N43/80 , A01N43/82 , A01N43/84 , A01N43/90 , C07D241/44
摘要： The present invention is to provide an oxopyrazine derivative having an excellent herbicidal activity and besides exhibiting high safety for useful crops and the like, or a salt thereof, and a herbicide containing the same.The present invention relates to an oxopyrazine derivative represented by formula [I]: wherein X1 represents an oxygen atom or a sulfur atom; X2 represents CH or N(O)m; m represents an integer of 0 or 1; R1 represents a hydrogen atom, a C1-C12 alkyl group and the like; R2 represents a halogen atom, a cyano group and the like; R3 is a hydroxyl group, a halogen atom and the like; A1 represents C(R4R5); A2 represents C(R6R7) or C═O; A3 represents C(R8R9); R4 to R9 represent a hydrogen atom or an alkyl group,or a salt thereof, and a herbicide containing these compounds.
摘要翻译：本发明提供具有优异的除草活性的氧草吡嗪衍生物，除了表现出对有用作物等的高安全性，或其盐，以及含有它们的除草剂。本发明涉及由式[I]表示的氧杂吡嗪衍生物：其中X1表示氧原子或硫原子; X2表示CH或N（O）m; m表示0或1的整数; R1表示氢原子，C1-C12烷基等; R2表示卤素原子，氰基等; R3是羟基，卤素原子等; A1表示C（R4R5）; A2表示C（R6R7）或C = O; A3表示C（R8R9）; R4至R9表示氢原子或烷基，或其盐，以及含有这些化合物的除草剂。

59. 发明申请

US20100193799A1 Semiconductor device and method of manufacturing semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100193799A1
公开(公告)日：2010-08-05
申请号：US12654620
申请日：2009-12-24
申请人： Yuki Nakano , Ryota Nakamura
发明人： Yuki Nakano , Ryota Nakamura
IPC分类号： H01L29/78 , H01L21/336 , H01L29/24
CPC分类号： H01L29/7813 , H01L21/046 , H01L21/0485 , H01L29/0696 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/45 , H01L29/66068 , H01L29/7802 , H01L29/7803 , H01L29/7805
摘要： The semiconductor device according to the present invention includes: a semiconductor layer of a first conductivity type made of SiC having an Si surface; a gate trench dug down from the surface of the semiconductor layer; a gate insulating film formed on a bottom surface and a side surface of the gate trench so that the ratio of the thickness of a portion located on the bottom surface to the thickness of a portion located on the side surface is 0.3 to 1.0; and a gate electrode embedded in the gate trench through the gate insulating film.
摘要翻译：根据本发明的半导体器件包括：由具有Si表面的SiC制成的第一导电类型的半导体层; 从半导体层的表面向下挖的栅极沟槽; 栅极绝缘膜，形成在栅极沟槽的底表面和侧表面上，使得位于底表面的部分的厚度与位于侧表面的部分的厚度之比为0.3至1.0; 以及通过栅极绝缘膜嵌入栅极沟槽中的栅电极。

60. 发明申请

US20100051919A1 ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR 有权
标题翻译：有机薄膜晶体管和有机薄膜发光晶体管
公开(公告)号：US20100051919A1
公开(公告)日：2010-03-04
申请号：US12516085
申请日：2007-11-21
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura
IPC分类号： H01L51/10
CPC分类号： H01L51/5296 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1088 , H01L51/0022 , H01L51/0038 , H01L51/005 , H01L51/0052 , H01L51/0054 , H01L51/0058 , H01L51/0067 , H01L51/0072 , H01L51/0074 , H01L51/052 , H01L51/0541 , H01L51/0545 , H05B33/14
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic hydrocarbon group or an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流在施加时被控制对所述栅电极施加的电压，其中，所述有机半导体层在其中央包含具有芳香族烃基或芳香族杂环基的特定有机化合物; 以及利用有机薄膜晶体管的有机薄膜发光晶体管，其中有机薄膜晶体管是利用在源极和漏极之间流动的电流获得发光的发光，并且在施加了发光时控制发光提供对栅电极的电压，并且相对于响应速度变高并且具有大的ON / OFF比。

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