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1. 发明授权

US09978952B2 Fused heterocyclic aromatic derivative, organic electroluminescence element material, and organic electroluminescence element using same 有权
公开(公告)号：US09978952B2
公开(公告)日：2018-05-22
申请号：US14234533
申请日：2012-09-11
申请人： Yuki Nakano , Kei Yoshida , Hideaki Nagashima , Ryohei Hashimoto
发明人： Yuki Nakano , Kei Yoshida , Hideaki Nagashima , Ryohei Hashimoto
IPC分类号： H01L51/50 , H01L51/00 , C07D333/76 , C07D519/00 , C07D307/91 , C09K11/06 , H05B33/10 , C09B57/00 , C09B69/00
CPC分类号： H01L51/0067 , C07D307/91 , C07D333/76 , C07D519/00 , C09B57/00 , C09B69/008 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1029 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , H01L51/0071 , H01L51/0073 , H01L51/0074 , H01L51/0085 , H01L51/5016 , H05B33/10
摘要： A compound represented by the following formula (1). In the formula, A1 is O, S, Si(Ar1)(Ar2), P(═O)(Ar3)(Ar4), a substituted or unsubstituted arylene group including 6 to 30 ring carbon atoms, or a substituted or unsubstituted heteroarylene group including 5 to 30 ring atoms.

2. 发明授权

US09764241B2 Game system utilizing network 有权
公开(公告)号：US09764241B2
公开(公告)日：2017-09-19
申请号：US14234894
申请日：2012-08-01
申请人： Yasushi Mito , Hidekazu Shimizu , Masanori Kono , Koji Makino , Masayuki Shamoto , Satoshi Tsuchida , Ryo Horie , Yuki Nakano , Naoko Nasuhara , Tomohiro Inami
发明人： Yasushi Mito , Hidekazu Shimizu , Masanori Kono , Koji Makino , Masayuki Shamoto , Satoshi Tsuchida , Ryo Horie , Yuki Nakano , Naoko Nasuhara , Tomohiro Inami
IPC分类号： A63F13/79 , A63F13/795 , A63F13/30
CPC分类号： A63F13/795 , A63F13/12 , A63F13/30 , A63F13/79 , A63F2300/5566 , A63F2300/6054 , A63F2300/8047
摘要： This game system (1) includes multiple game machines (2A, 2B) connected to a network (5), allows a player of a game machine to select one of selective items on a game prepared in advance, and allows the player to play a game having content reflecting the selected item. This game system is provided with a device (32) for storing relation data for determining whether or not a predetermined connection exists between players, a device (11) for determining the selection state pertaining to the items selected by the players on the game machines, a device (11, 12) for determining, based on the relation data, other players that have the predetermined connection with the player, and a device (21) which, when the player is making the selection from the selective items, presents the player making the selection with the selection state of other players having the predetermined connection with that player.

3. 发明授权

US09537111B2 Compound, material for organic electroluminescence device, and organic electroluminescence device 有权
标题翻译：有机电致发光元件用复合物，有机电致发光元件
公开(公告)号：US09537111B2
公开(公告)日：2017-01-03
申请号：US14116896
申请日：2012-05-09
申请人： Yuki Nakano , Masaki Numata , Hideaki Nagashima
发明人： Yuki Nakano , Masaki Numata , Hideaki Nagashima
IPC分类号： H01L51/50 , H01L51/00 , C09K11/06 , H05B33/14 , C07D333/20 , C07D333/76 , C07D407/10 , C07D417/14 , C07D491/048 , C07D209/86 , C07D307/91
CPC分类号： H01L51/50 , C07D209/86 , C07D307/91 , C07D333/20 , C07D333/76 , C07D407/10 , C07D417/14 , C07D491/048 , C09K11/06 , C09K2211/1007 , C09K2211/1044 , C09K2211/1059 , C09K2211/1088 , C09K2211/1092 , H01L51/0071 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/5016 , H01L51/5056 , H01L51/5088 , H01L51/5096 , H05B33/14
摘要： A specific material for organic electroluminescence device having m-phenylene skeleton in its molecule realizes a highly heat-resistant and long lifetime organic electroluminescence device capable of driving at low voltage with high efficiency.
摘要翻译：在其分子中具有间亚苯基骨架的有机电致发光元件的具体材料实现了能够以低效率高效率驱动的高耐热且长寿命的有机电致发光器件。

4. 发明授权

US09219127B2 SiC field effect transistor 有权
标题翻译： SiC场效应晶体管
公开(公告)号：US09219127B2
公开(公告)日：2015-12-22
申请号：US13518650
申请日：2010-12-24
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78 , H01L29/66 , H01L29/165 , H01L29/417 , H01L29/16 , H01L29/43 , H01L29/47 , H01L29/861 , H01L29/872
CPC分类号： H01L29/7813 , H01L29/1608 , H01L29/165 , H01L29/41741 , H01L29/41766 , H01L29/43 , H01L29/47 , H01L29/66068 , H01L29/7803 , H01L29/7806 , H01L29/8618 , H01L29/872
摘要： A SiC field effect transistor includes: a SiC semiconductor layer; and a MIS transistor structure including a first conductivity type source region in the semiconductor layer, a second conductivity type body region in the semiconductor layer in contact with the source region, a first conductivity type drift region in the semiconductor layer in contact with the body region, a gate electrode opposed to the body region with a gate insulation film interposed between the electrode and the body region for forming a channel in the body region to cause electric current to flow between the drift region and the source region, and a barrier forming layer in contact with the drift region to form a junction barrier by the contact with the drift region, the junction barrier being lower than a diffusion potential of a body diode defined by a junction between the body region and the drift region.
摘要翻译： SiC场效应晶体管包括：SiC半导体层; 以及包括半导体层中的第一导电型源极区域的MIS晶体管结构，与源极区域接触的半导体层中的第二导电类型体区域，与体区域接触的半导体层中的第一导电型漂移区域与所述体区相对的栅极电极，其具有插入在所述电极和所述体区之间的栅极绝缘膜，用于在所述体区中形成沟道，以使所述电流在所述漂移区域和所述源极区域之间流动，以及阻挡层形成层与漂移区接触以通过与漂移区的接触而形成结屏障，所述结屏障低于由身体区域和漂移区域之间的结点限定的体二极管的扩散电位。

5. 发明授权

US09184286B2 Semiconductor device having a breakdown voltage holding region 有权
标题翻译：具有击穿电压保持区域的半导体器件
公开(公告)号：US09184286B2
公开(公告)日：2015-11-10
申请号：US13983157
申请日：2012-02-01
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/66 , H01L29/78 , H01L21/82 , H01L29/417 , H01L29/06 , H01L29/10 , H01L29/16 , H01L29/45 , H01L29/47 , H01L29/20
CPC分类号： H01L29/7813 , H01L21/8213 , H01L27/088 , H01L29/0619 , H01L29/0623 , H01L29/0696 , H01L29/086 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/41766 , H01L29/45 , H01L29/47 , H01L29/66045 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7827 , H01L2224/0603
摘要： A semiconductor device of the present invention is a semiconductor device having a semiconductor layer comprising a wide band gap semiconductor, wherein the semiconductor layer includes: a first conductivity-type source region, a second conductivity-type channel region and a first conductivity-type drain region, which are formed in this order from the surface side of the semiconductor layer; a source trench lying from the surface of the semiconductor layer through the source region and the channel region to the drain region; a gate insulating film formed so as to contact the channel region; a gate electrode facing the channel region with the gate insulating film interposed therebetween; and a first breakdown voltage holding region of a second conductivity type formed selectively on the side face or the bottom face of the source trench, and the semiconductor device includes a barrier formation layer, which is joined with the drain region in the source trench, for forming, by junction with the drain region, a junction barrier lower than a diffusion potential of a body diode formed by p-n junction between the channel region and the drain region.
摘要翻译：本发明的半导体器件是具有包括宽带隙半导体的半导体层的半导体器件，其中半导体层包括：第一导电型源极区，第二导电型沟道区和第一导电类型漏极区域，其从半导体层的表面侧依次形成; 源极沟槽，其从半导体层的表面通过源极区域和沟道区域到达漏极区域; 形成为与沟道区域接触的栅极绝缘膜; 面对沟道区域的栅电极，其间插入有栅极绝缘膜; 以及选择性地形成在源沟槽的侧面或底面上的第二导电类型的第一击穿电压保持区域，并且所述半导体器件包括与源极沟槽中的漏极区域接合的势垒形成层，用于通过与漏极区域的连接形成低于由沟道区域和漏极区域之间的pn结形成的体二极管的扩散电位的结屏障。

6. 发明授权

US09166038B2 Semiconductor device, and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09166038B2
公开(公告)日：2015-10-20
申请号：US13614510
申请日：2012-09-13
申请人： Yuki Nakano
发明人： Yuki Nakano
IPC分类号： H01L29/78 , H01L29/10 , H01L29/66 , H01L29/06 , H01L29/417
CPC分类号： H01L29/7813 , H01L21/0465 , H01L29/0623 , H01L29/063 , H01L29/1095 , H01L29/1608 , H01L29/36 , H01L29/41766 , H01L29/4236 , H01L29/66068 , H01L29/66727 , H01L29/66734 , H01L29/7827
摘要： A semiconductor device (A1) includes a semiconductor layer having a first face with a trench (3) formed thereon and a second face opposite to the first face, a gate electrode (41), and a gate insulating layer (5). The semiconductor layer includes a first n-type semiconductor layer (11), a second n-type semiconductor layer (12), a p-type semiconductor layer (13), and an n-type semiconductor region (14). The trench (3) is formed so as to penetrate through the p-type semiconductor layer (13) and to reach the second n-type semiconductor layer (12). The p-type semiconductor layer (13) includes an extended portion extending to a position closer to the second face of the semiconductor layer than the trench (3) is. Such structure allows suppressing dielectric breakdown in the gate insulating layer (5).
摘要翻译：半导体器件（A1）包括具有形成在其上的沟槽（3）的第一面和与第一面相反的第二面的半导体层，栅极（41）和栅极绝缘层（5）。半导体层包括第一n型半导体层（11），第二n型半导体层（12），p型半导体层（13）和n型半导体区域（14）。沟槽（3）形成为穿过p型半导体层（13）并到达第二n型半导体层（12）。 p型半导体层（13）包括延伸到比沟槽（3）更靠近半导体层的第二面的位置的延伸部分。这种结构允许抑制栅绝缘层（5）中的电介质击穿。

7. 发明授权

US08901540B2 Fused ring compounds useful in organic thin-film transistors 有权
标题翻译：用于有机薄膜晶体管的熔融环化合物
公开(公告)号：US08901540B2
公开(公告)日：2014-12-02
申请号：US13060779
申请日：2009-08-20
申请人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura , Hirofumi Kondo
发明人： Masatoshi Saito , Yuki Nakano , Hiroaki Nakamura , Hirofumi Kondo
IPC分类号： H01L51/52 , C07F7/08 , C07C255/52 , C07C22/08 , C07C25/22 , C07C211/61 , C07C321/28 , C07C43/20 , C07D495/04 , C07D471/04 , H01L51/10 , H01L51/00 , C07C15/56 , C07C15/28 , C07C13/62 , H01L51/05
CPC分类号： C07D495/04 , C07C13/62 , C07C15/28 , C07C15/56 , C07C2603/52 , C07C2603/54 , H01L51/0055 , H01L51/0074 , H01L51/0541 , H01L51/0545 , H01L51/0558 , Y10S428/917
摘要： A compound for an organic thin film transistor having a structure represented by the following formula (1): wherein R1 and R2, and R3 and R4 are respectively combined with each other to form an aromatic hydrocarbon ring having 6 to 60 carbon atoms or an aromatic heterocyclic ring having 3 to 60 carbon atoms; the ring being fused to the ring to which the groups are bonded, whereby the structure of the formula (1) has 5 or more aromatic rings that are fused; and the fused rings formed by R1 and R2, and R3 and R4 each may have a substituent.
摘要翻译：一种具有下式（1）所示结构的有机薄膜晶体管的化合物：其中R1和R2以及R3和R4分别相互结合形成具有6至60个碳原子的芳烃环或芳族具有3至60个碳原子的杂环; 所述环与所述基团键合的环稠合，由此式（1）的结构具有5个或更多个稠合的芳环; 并且由R 1和R 2以及R 3和R 4形成的稠环各自可以具有取代基。

8. 发明授权

US08563145B2 Material containing two or three dibenzofuran groups, dibenzothiophene groups, or a combination thereof, which is operable for organic electroluminescence elements, and organic electroluminescence elements using the material 有权
标题翻译：含有可用于有机电致发光元件的二或三个二苯并呋喃基团，二苯并噻吩基团或其组合的材料和使用该材料的有机电致发光元件
公开(公告)号：US08563145B2
公开(公告)日：2013-10-22
申请号：US12303199
申请日：2007-05-29
申请人： Toshihiro Iwakuma , Masahide Matsuura , Yuki Nakano , Hidetsugu Ikeda
发明人： Toshihiro Iwakuma , Masahide Matsuura , Yuki Nakano , Hidetsugu Ikeda
IPC分类号： H01L51/54 , C09K11/06
CPC分类号： H01L51/0094 , C07F7/0812 , C07F7/30 , C09K11/06 , C09K2211/1007 , C09K2211/1029 , C09K2211/1044 , C09K2211/185 , H01L51/0061 , H01L51/0072 , H01L51/0073 , H01L51/0074 , H01L51/0077 , H01L51/0081 , H01L51/0085 , H01L51/5012 , H01L51/5036 , H01L2251/308 , H05B33/14
摘要： An organic electroluminescence device comprising a compound having a specific structure having a heteroatom and an organic electroluminescence device which comprises a cathode, an anode and an organic thin film layer which comprises at least one layer comprising at least a light emitting layer and is disposed between the cathode and the anode, wherein at least one layer in the organic thin film layer comprises the above compound. The device provides excellent efficiency of light emission, forms no defects in pixels, exhibits excellent heat resistance and has a long life.
摘要翻译：一种有机电致发光器件，包括具有特定结构的具有杂原子的化合物和有机电致发光器件，所述有机电致发光器件包括阴极，阳极和有机薄膜层，所述有机薄膜层至少包括至少一层至少包含发光层的层，阴极和阳极，其中有机薄膜层中的至少一层包含上述化合物。该器件提供优异的发光效率，不会在像素上形成缺陷，表现出优异的耐热性，寿命长。

9. 发明授权

US08525156B2 Organic thin film transistor having an amorphous channel control layer with specified inozation potential 有权
标题翻译：有机薄膜晶体管，具有具有特定掺杂电位的无定形沟道控制层
公开(公告)号：US08525156B2
公开(公告)日：2013-09-03
申请号：US12679634
申请日：2008-09-09
申请人： Hiroaki Nakamura , Yuki Nakano , Masatoshi Saito , Hirofumi Kondo
发明人： Hiroaki Nakamura , Yuki Nakano , Masatoshi Saito , Hirofumi Kondo
IPC分类号： H01L51/30
CPC分类号： B82Y10/00 , C08G2261/124 , C08G2261/222 , C08G2261/226 , C08G2261/314 , C08G2261/3162 , C08G2261/76 , C08G2261/92 , H01L51/0003 , H01L51/0012 , H01L51/0039 , H01L51/0043 , H01L51/0059 , H01L51/006 , H01L51/0541 , H01L51/0545 , H01L51/0562 , H01L51/5296 , H01L2251/552
摘要： An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon applying a voltage to the gate electrode, wherein a channel control layer including an amorphous organic compound having an ionization potential of less than 5.8 eV is provided between the organic semiconductor layer and the insulator layer, has excellent stability of a field-effect mobility and a high response speed even when stored at a high temperature.
摘要翻译：一种有机薄膜晶体管，包括其上具有至少三个端子的基板，栅电极，源电极和漏电极，绝缘体层和有机半导体层，源极和漏极之间的电流被控制在施加电压到栅电极，其中在有机半导体层和绝缘体层之间设置包含电离电位小于5.8eV的非晶有机化合物的沟道控制层，具有优异的场效应迁移率和高响应性的稳定性即使在高温下储存时也是如此。

10. 发明申请

US20130102982A1 ABSORBENT PRODUCT 有权
标题翻译：吸收产品
公开(公告)号：US20130102982A1
公开(公告)日：2013-04-25
申请号：US13807518
申请日：2011-06-29
申请人： Yuki Nakano , Asami Kobori
发明人： Yuki Nakano , Asami Kobori
IPC分类号： A61F13/49 , A61F13/515
CPC分类号： A61F13/49017 , A61F13/49001 , A61F13/49019 , A61F13/515
摘要： Provided is an underpants-type disposable diaper that is improved in a fit to a part from the intergluteal cleft to the crotch of a wearer and less prone to give a wearer a puffy and discomfort feeling at a crotch portion during wearing.In order to solve the above problem, provided is an underpants-type disposable diaper, wherein the back body part B has at an intergluteal cleft facing portion a bending fit portion 40 which is bent so as to enter into the intergluteal cleft of a wearer, the outer sheet 20 has at each of the front and back body parts F, B a lifting elastic member 26 - - - , 28 - - - which exerts a contraction force of a vertical component to lift a crotch portion toward a waist side, and a tensile stress on the front body part F undergoing vertical elastic deformation is larger than a tensile stress on the back body part B undergoing vertical elastic deformation.
摘要翻译：本发明提供一种内裤型一次性尿布，其与从穿着者的臀沟到裆部的部位配合得到改善，并且在穿着期间不太容易使穿着者在裆部发生浮肿和不适感。为了解决上述问题，提供了一种内裤型一次性尿布，其中后身部分B在臀间裂缝面对部分处具有弯曲配合部分40，弯曲配合部分40弯曲以进入穿戴者的臀间裂缝，外片20具有在前身体部和后身部分F，B中的每一个上施加垂直部分的收缩力以将裆部部分向腰侧提升的提升弹性部件26 - - ，28 - 经历垂直弹性变形的前身部分F上的拉伸应力大于经受垂直弹性变形的后身部分B上的拉伸应力。

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