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51. 发明授权

US06320198B1 Charged particle beam lithography apparatus for forming pattern on semi-conductor 失效
公开(公告)号：US06320198B1
公开(公告)日：2001-11-20
申请号：US09621707
申请日：2000-07-21
申请人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
发明人： Hiroyuki Ito , Yasunari Sohda , Yasuhiro Someda , Yoshinori Nakayama , Masahide Okumura , Hidetoshi Satoh
IPC分类号： H01J37304
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31776
摘要： In order to provide a high-speed and high accuracy cell projection exposure apparatus which increases a pattern projection number extremely, a plurality of stencil masks mounting a transferal aperture and a transmission aperture are provided and are positioned by a drive stage, the electron beam passes through a transmission aperture of other stencil masks while selecting the aperture on a stencil mask with a beam deflection device, the transmission aperture is provided for a mask transfer direction in succession, the stencil mask is moved while being transmitted with the beam, and other stencil mask transfer is executed when specified stencil mask aperture group is exposed. These operations are repeated so that all exposure processes are performed.

52. 发明授权

US5831273A Charged particle beam lithography method and apparatus thereof 失效
标题翻译：带电粒子束光刻方法及其装置
公开(公告)号：US5831273A
公开(公告)日：1998-11-03
申请号：US811927
申请日：1997-03-05
申请人： Yasuhiro Someda , Yasunari Sohda , Yoshinori Nakayama , Hiroyuki Itoh
发明人： Yasuhiro Someda , Yasunari Sohda , Yoshinori Nakayama , Hiroyuki Itoh
IPC分类号： H01J37/302 , H01J37/317 , G06F15/46
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3174
摘要： A method of adjusting a shaped beam in a charged particle beam writing method of writing a pattern on the surface of a written target using the above shaped beam is disclosed. The above method of adjusting the above shaped beam consists of a process for measuring the point of the center of the intensity of the shaped beam projected on the surface of the written target, a process for calculating a projected position correcting amount for correcting the projected position on the surface of the written target of the shaped beam based upon the measured point of the center of the intensity and a process for correcting the projected position on the surface of the written target of the shaped beam by the obtained projected position correcting amount. According to this method of correcting the projected position of the beam based upon the point of the center of the intensity of the shaped beam, a positioning error in a connection between the parts of patterns written on the surface of the written target can be greatly reduced.
摘要翻译：公开了一种使用上述成形光束在写入目标的表面上写入图案的带电粒子束写入方法中调整成形光束的方法。上述调整上述成形光束的方法由用于测量投影在被写入的目标的表面上的成形光束的强度的中心点的测量的处理，用于计算用于校正投影位置的投影位置校正量的处理基于强度中心的测量点的成形光束的写入目标的表面，以及通过所获得的投影位置校正量校正成形光束的写入目标的表面上的投影位置的处理。根据这种根据成形光束强度的中心点校正光束的投影位置的方法，可以大大减少写在写入目标表面上的图案部分之间的连接中的定位误差。

53. 发明授权

US5601686A Wafer transport method 失效
标题翻译：晶圆输送方式
公开(公告)号：US5601686A
公开(公告)日：1997-02-11
申请号：US642510
申请日：1996-05-03
申请人： Yoshio Kawamura , Yoshifumi Kawamoto , Fumihiko Uchida , Kenichi Mizuishi , Natsuki Yokoyama , Eiichi Murakami , Yoshinori Nakayama , Eiichi Seya
发明人： Yoshio Kawamura , Yoshifumi Kawamoto , Fumihiko Uchida , Kenichi Mizuishi , Natsuki Yokoyama , Eiichi Murakami , Yoshinori Nakayama , Eiichi Seya
IPC分类号： B65G49/00 , B65G49/07 , H01L21/00 , H01L21/02 , H01L21/027 , H01L21/677
CPC分类号： H01L21/67748 , H01L21/67167 , H01L21/6719 , H01L21/67196 , H01L21/67742 , Y10S414/135 , Y10S414/139 , Y10S438/935
摘要： A wafer transport method including the steps of preparing a semiconductor process equipment having a transport chamber, a process chamber, an interface means for connecting the transport chamber to the process chamber, and a transport means for transporting a semiconductor wafer from the transport chamber to the process chamber by way of the interface means; inserting the transport means mounting a substrate in a communicating corridor including a supply means and an exhaust means; and transporting the substrate while performing the supply and exhaust by sequentially controlling a supply shutoff means, an exhaust shutoff means, and a communicating shutoff means according to the position of a conductance part formed of a gap between the transport means and the communicating corridor. With this method, the substrate is transported at a high throughput without the contamination on the substrate while keeping the different atmospheric conditions of the transport chamber and the process chamber, thereby manufacturing a semiconductor device with a high performance.
摘要翻译：一种晶片输送方法，包括以下步骤：制备具有输送室的半导体工艺设备，处理室，用于将输送室连接到处理室的接口装置，以及用于将半导体晶片从输送室输送到处理室; 将安装基板的输送装置插入包括供给装置和排气装置的通信走廊中; 并且通过根据由传送装置和通信走廊之间的间隙形成的电导部分的位置顺序地控制供给关闭装置，排气关闭装置和连通关闭装置，在执行供应和排出的同时运送基板。利用该方法，在保持输送室和处理室的不同大气条件的同时，以高通量输送基板而不会在基板上产生污染，从而制造具有高性能的半导体器件。

54. 发明授权

US5424173A Electron beam lithography system and method 失效
公开(公告)号：US5424173A
公开(公告)日：1995-06-13
申请号：US158820
申请日：1993-11-26
申请人： Hiroaki Wakabayashi , Osamu Suga , Yoshinori Nakayama , Shinji Okazaki
发明人： Hiroaki Wakabayashi , Osamu Suga , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01L21/027 , H01J37/317 , G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/0453 , H01J2237/31769 , H01J2237/31776 , Y10S430/143
摘要： A system and method are provided for compensating for proximity effects between selected adjacent portions of pattern elements on an integrated circuit wafer where it is determined by simulation that undesirable resist patterns will result. The subject lithography system includes projecting an electron beam onto the wafer through an aperture plate of pattern elements to obtain the desired beam pattern. An aperture mask includes a plurality of first portions corresponding to first wafer circuit element portions spaced for avoiding proximity effects on the wafer and a plurality of second portions corresponding to second element portions spaced for obtaining proximity effects between elements on the wafer. The plurality of second portions are sized to have an increased adjacent spacing relative to a resultant adjacent spacing of the corresponding second element portions whereby the resultant adjacent spacing of the second element portions on the wafer is selectively reduced by the proximity effects. Alternatively, or in addition, a wire mesh is provided at the second portions of the aperture plate to reduce the beam intensity for corresponding reduction of the proximity effects.

55. 发明授权

US5420356A Process for producing cyclobutanones 失效
标题翻译：环丁酮的制备方法
公开(公告)号：US5420356A
公开(公告)日：1995-05-30
申请号：US216847
申请日：1994-03-24
申请人： Yoshinori Nakayama
发明人： Yoshinori Nakayama
IPC分类号： C07C45/45 , C07C49/457 , C07C49/687 , C07C61/04 , C07C61/16
CPC分类号： C07C61/16 , C07C45/45 , C07C49/457 , C07C49/687 , C07C61/04
摘要： A process for producing cyclobutanones with industrial advantage is provided which comprises contacting an .alpha.-haloacetyl halide with an ethylenic unsaturated compound in the presence of a dehydrohalogenating agent and a Lewis acid.
摘要翻译：提供了一种具有工业优势的环丁酮的制备方法，其包括在脱卤化氢剂和路易斯酸的存在下使α-卤代乙酰卤与烯属不饱和化合物接触。

56. 发明授权

US5283440A Electron beam writing system used in a cell projection method 失效
标题翻译：电子束写入系统用于单元投影法
公开(公告)号：US5283440A
公开(公告)日：1994-02-01
申请号：US770527
申请日：1991-10-03
申请人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
发明人： Yasunari Sohda , Hideo Todokoro , Norio Saitou , Haruo Yoda , Hiroyuki Itoh , Hiroyuki Shinada , Yoshinori Nakayama , Shinji Okazaki
IPC分类号： H01J37/317 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/049 , H01J2237/1532 , H01J2237/30455 , H01J2237/31776
摘要： An electron beam writing system is used in variable shaping and cell projection methods to produce LSI and reticles. In the cell projection method, the beam is deflected to define a writing position. In the time it takes to define the writing position, an operation of forming the beam is concluded, which operation includes the deflection of the beam to select a cell graphic, re-deflection for correcting the origin position of the written graphic, astigmatism correction of the written graphic, and focus correction for reducing the Coulomb effect. An electrostatic deflector is used as the deflector for the cell graphic selection. The arrangement of graphics includes a square aperture centrally located with a group of cell projection apertures positioned adjacent two sides of the square aperture.
摘要翻译：电子束写入系统用于可变整形和电池投影方法以产生LSI和光罩。在单元投影方法中，光束被偏转以限定写入位置。在定义写入位置的时候，结束了形成光束的操作，其操作包括光束的偏转以选择单元图形，用于校正写入图形的原点位置的重新偏转，散光校正书面图形和焦点校正，以减少库仑效应。静电偏转器用作细胞图形选择的偏转器。图形的布置包括中心定位的方孔，其中一组单元突出孔定位成邻近正方形孔的两侧。

57. 发明授权

US4812287A Nickel-chromium stainless steel having improved corrosion resistances and machinability 失效
标题翻译：镍铬不锈钢具有改善的耐腐蚀性和可加工性
公开(公告)号：US4812287A
公开(公告)日：1989-03-14
申请号：US157265
申请日：1988-02-18
申请人： Yoshinori Nakayama , Kikuo Takizawa
发明人： Yoshinori Nakayama , Kikuo Takizawa
IPC分类号： C22C38/44 , C22C38/40
CPC分类号： C22C38/44
摘要： A nickel-chromium stainless steel having improved corrosion resistances and machinability, comprising less than 0.08 wt. % of C, less than 1.0 wt. % of Si, less than 0.7 wt. % of Mn, less than 0.04 wt. % of P, less than 0.005 wt. % of S, 8.0 to 12.0 wt. % of Ni, 17.0 to 20.0 wt. % of Cr, 0.40 to 0.80 wt. % of Mo, less than 0.3 wt. % of Cu, 0.03 to 0.5 wt. % of Sn and the balance of Fe.In another embodiment of the present invention, 0.03 to 0.1 wt. % of Bi is added to the above-described composition to further improve the machinability of the stainless steel.
摘要翻译：具有改进的耐腐蚀性和机械加工性的镍铬不锈钢包含小于0.08wt。 C％，小于1.0wt。 Si％，小于0.7wt。 Mn的％，小于0.04wt。 P％，小于0.005wt。 S％，8.0〜12.0重量％ Ni的比例为17.0〜20.0wt。％的Cr，0.40〜0.80重量％ Mo的％，小于0.3wt。％的Cu，0.03〜0.5wt。 Sn的％，余量为Fe。在本发明的另一个实施方案中，0.03至0.1wt。将Bi的％添加到上述组合物中以进一步提高不锈钢的机械加工性。

58. 发明授权

US09200896B2 Pattern dimension measurement method and charged particle beam microscope used in same 有权
标题翻译：图案尺寸测量方法和使用的带电粒子束显微镜
公开(公告)号：US09200896B2
公开(公告)日：2015-12-01
申请号：US13504129
申请日：2010-09-30
申请人： Keiichiro Hitomi , Yoshinori Nakayama , Junichi Tanaka
发明人： Keiichiro Hitomi , Yoshinori Nakayama , Junichi Tanaka
IPC分类号： H04N9/47 , H04N7/18 , G01B15/00 , H01J37/28
CPC分类号： G01B15/00 , H01J37/28 , H01J2237/2814 , H01J2237/2817
摘要： In order to provide a pattern dimension measurement method with a small measured error and excellent reproducibility even though defocus occurs and a charged particle beam microscope used in the same, in a method for applying a charged particle beam to a specimen formed with a pattern to measure a pattern dimension from a signal intensity distribution of signal charged particles from the specimen, edge index positions (X1) and (X2) on the right and left of the maximum point of signal intensity corresponding to a pattern edge are calculated by a threshold method, and a pattern edge position (Xe) is found from a mean value between the positions. Thus, it is possible to reduce the influence of defocus on the pattern edge position (Xe).
摘要翻译：为了提供即使发生散焦而具有小的测量误差和优异的再现性的图案尺寸测量方法，并且在其中使用带电粒子束显微镜，在将带电粒子束施加到形成有待测量图案的样本的方法中通过阈值法计算来自样本的信号带电粒子的信号强度分布的图案尺寸，对应于图案边缘的最大信号强度点右侧和左侧的边缘索引位置（X1）和（X2）并且从位置之间的平均值找到图案边缘位置（Xe）。因此，可以减小散焦对图案边缘位置（Xe）的影响。

59. 发明授权

US09110384B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US09110384B2
公开(公告)日：2015-08-18
申请号：US13522984
申请日：2011-01-21
申请人： Seiko Omori , Junichi Tanaka , Yoshinori Nakayama , Keiichiro Hitomi
发明人： Seiko Omori , Junichi Tanaka , Yoshinori Nakayama , Keiichiro Hitomi
IPC分类号： H01J37/28 , G03F7/26 , G03F7/20 , H01J37/22
CPC分类号： G03F7/70625 , H01J37/222 , H01J37/28 , H01J2237/1536 , H01J2237/226 , H01J2237/24571 , H01J2237/2809 , H01J2237/2817
摘要： Disclosed is a scanning electron microscope provided with a calculation device (403) for measuring the dimension of a pattern on a sample (413), characterized in that the amount of change of a pattern shape, caused by electron beam irradiation, is calculated and stored, and a pattern shape contour (614; 815; 1512) before the sample is irradiated with an electron beam is restored from a pattern shape contour (613; 814; 1511) in a scanning electron microscope image (612; 813; 1510) after the sample is irradiated with an electron beam using the calculated amount and, then, the pattern shape contour (614; 815; 1512) is displayed. Thus, the shrinking of a resist and/or the effect of electrostatic charge caused when a sample is irradiated with an electron beam are eliminated, so that the shape contour of a two-dimensional pattern before irradiating an electron beam can be restored with a high degree of accuracy, and the dimension of a pattern can be measured with a high degree of accuracy, using the restored image.
摘要翻译：公开了一种具有用于测量样品（413）上的图案的尺寸的计算装置（403）的扫描电子显微镜，其特征在于，计算并存储由电子束照射引起的图案形状的变化量在扫描电子显微镜图像（612; 813; 1510）中从扫描电子显微镜图像（612; 813; 1510）中的图案形状轮廓（613; 814; 1511）恢复在用电子束照射样品之前的图案形状轮廓（614; 815; 1512）使用计算量用电子束照射样品，然后显示图案形状轮廓（614; 815; 1512）。因此，消除了当用电子束照射样品时引起的抗蚀剂收缩和/或静电电荷的影响，从而能够以高的电压恢复照射电子束之前的二维图案的形状轮廓使用恢复的图像，可以高精度地测量图案的精度和尺寸。

60. 发明授权

US08263929B2 Standard member for correction, scanning electron microscope using same, and scanning electron microscope correction method 有权
标题翻译：标准校正元件，扫描电子显微镜及其扫描电子显微镜校正方法
公开(公告)号：US08263929B2
公开(公告)日：2012-09-11
申请号：US13057235
申请日：2009-07-31
申请人： Yoshinori Nakayama , Yasunari Sohda , Keiichiro Hitomi
发明人： Yoshinori Nakayama , Yasunari Sohda , Keiichiro Hitomi
IPC分类号： G01J1/10
CPC分类号： H01J37/28 , B82Y15/00 , H01J2237/2826
摘要： Disclosed is a standard specimen, used with an electron microscope to correct the magnification with high precision. A standard member used for correction corrects a scanning electron microscope that measures a pattern within an observation region based on information about the secondary electrons generated by scanning incident electron lines on the observation region on a measurement specimen, or information about the reflected electron intensity. The standard member has a first pattern region that corrects the magnification and that comprises a concavo-convex pattern (line/space pattern) in the cross section of a multilayer film that has been laminated, and a second pattern region near the first pattern at almost the same height that does not contain a pattern with the same periodicity as the pattern pitch size of the first region and that is used for beam adjustment.
摘要翻译：公开了一种标准样品，与电子显微镜一起使用以高精度校正放大率。用于校正的标准构件基于通过扫描测量样本上的观察区域上的入射电子线扫描产生的二次电子信息或关于反射电子强度的信息来校正观察区域内的图案的扫描电子显微镜。标准构件具有第一图案区域，该第一图案区域校正放大率，并且在层压的多层膜的横截面中包括凹凸图案（线/空间图案），以及在第一图案附近的第二图案区域相同的高度不包含与第一区域的图案间距尺寸相同的周期性的图案，并且用于光束调节。

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