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51. 发明授权

US08309475B2 Apparatus and method of aligning and positioning a cold substrate on a hot surface 有权
标题翻译：将冷基板对准和定位在热表面上的装置和方法
公开(公告)号：US08309475B2
公开(公告)日：2012-11-13
申请号：US13343523
申请日：2012-01-04
申请人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
发明人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
IPC分类号： H01L21/26
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

52. 发明授权

US08178819B2 Thermal flux processing by scanning a focused line beam 有权
标题翻译：通过扫描聚焦线束进行热通量处理
公开(公告)号：US08178819B2
公开(公告)日：2012-05-15
申请号：US11079785
申请日：2005-03-14
申请人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
发明人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
IPC分类号： B23K26/08 , B23K26/10
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/034 , B23K26/04 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K26/0665 , B23K26/0738 , B23K26/082 , B23K26/083 , B23K26/0838 , B23K26/0869 , B23K26/123 , B23K26/125 , B23K26/142 , B23K26/32 , B23K26/34 , B23K26/705 , B23K2101/34 , B23K2101/40 , B23K2103/08 , B23K2103/50 , C23C8/00 , C23C8/10 , C23C8/22 , C23C16/047 , C23C16/481 , G02B27/0955 , H01L21/00 , H01L21/2026 , H01L21/67115
摘要： The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.
摘要翻译：热处理装置包括平台，连续波电磁辐射源，一系列透镜，平移机构，检测模块，三维自动对焦以及计算机系统。该台被配置为在其上接收基板。连续波电磁辐射源被设置在与该台相邻的位置，并且被配置成沿着朝向衬底的路径发射连续波电磁辐射。该系列透镜设置在连续波电磁辐射源和台之间，并被配置为将连续波电磁辐射冷凝成基片表面上的连续波电磁辐射线。翻译机构被配置为相对于彼此平移连续波电磁辐射的阶段和线。检测模块位于路径内，被配置为检测连续波电磁辐射。

53. 发明授权

US08097543B2 Apparatus and method of aligning and positioning a cold substrate on a hot surface 有权
公开(公告)号：US08097543B2
公开(公告)日：2012-01-17
申请号：US12839282
申请日：2010-07-19
申请人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
发明人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
IPC分类号： H01L21/26
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.

54. 发明授权

US07754518B2 Millisecond annealing (DSA) edge protection 有权
标题翻译：毫秒退火（DSA）边缘保护
公开(公告)号：US07754518B2
公开(公告)日：2010-07-13
申请号：US12032475
申请日：2008-02-15
申请人： Blake Koelmel , Robert C. McIntosh , David D L Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
发明人： Blake Koelmel , Robert C. McIntosh , David D L Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
IPC分类号： H01L21/00
CPC分类号： H01L21/67115 , H01L21/268 , H01L21/68735 , H01L21/68742
摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.
摘要翻译：提供了一种用于热处理衬底的方法和装置。衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

55. 发明申请

US20090296774A1 METHOD AND APPARATUS FOR DETECTING THE SUBSTRATE TEMPERATURE IN A LASER ANNEAL SYSTEM 有权
标题翻译：用于检测激光神经系统中底物温度的方法和装置
公开(公告)号：US20090296774A1
公开(公告)日：2009-12-03
申请号：US12475404
申请日：2009-05-29
申请人： Blake Koelmel , Abhilash J. Mayur
发明人： Blake Koelmel , Abhilash J. Mayur
IPC分类号： G01J5/00
CPC分类号： H01L21/67248 , G01J5/048 , H01L21/67253 , H01L21/68742
摘要： Embodiments of the invention provide a method and an apparatus for detecting the temperature of a substrate surface. In one embodiment, a method for measuring the temperature is provided which includes exposing the surface of the substrate to a laser beam radiating from a laser source, radiating emitted light from a portion of the surface of the substrate, through the shadow ring, and towards a thermal sensor, and determining the temperature of the portion of the surface of the substrate from the emitted light. The substrate may be disposed on a substrate support within a treatment region and a shadow ring may be disposed between the laser source and the surface of the substrate. The shadow ring may be selectively opaque to the laser beam and transparent to the emitted light.
摘要翻译：本发明的实施例提供了一种用于检测衬底表面的温度的方法和装置。在一个实施例中，提供了一种用于测量温度的方法，其包括将衬底的表面暴露于从激光源辐射的激光束，从衬底表面的一部分通过阴影环辐射发射的光，并朝向热传感器，并且从所发射的光确定衬底的表面部分的温度。衬底可以设置在处理区域内的衬底支撑件上，并且阴影环可以设置在激光源和衬底的表面之间。阴影环可以选择性地对激光束不透明并且对于发射的光是透明的。

56. 发明申请

US20090181553A1 APPARATUS AND METHOD OF ALIGNING AND POSITIONING A COLD SUBSTRATE ON A HOT SURFACE 审中-公开
标题翻译：在热表面上对准和定位冷基底的装置和方法
公开(公告)号：US20090181553A1
公开(公告)日：2009-07-16
申请号：US12013355
申请日：2008-01-11
申请人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
发明人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
IPC分类号： H01L21/268
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

57. 发明授权

US6164816A Tuning a substrate temperature measurement system 有权
标题翻译：调整基板温度测量系统
公开(公告)号：US6164816A
公开(公告)日：2000-12-26
申请号：US133993
申请日：1998-08-14
申请人： Wolfgang Aderhold , Abhilash J. Mayur , Peter A. Knoot
发明人： Wolfgang Aderhold , Abhilash J. Mayur , Peter A. Knoot
IPC分类号： G01K15/00 , G01J5/00 , G01J5/10 , H01L21/26 , H01L21/66
CPC分类号： G01J5/0003 , G01J5/0007 , G01J2005/0048
摘要： A technique and system for tuning temperature sensor readings in a thermal processing chamber includes determining an actual temperature profile for a substrate based on measurements of the substrate. A simulated temperature profile for the substrate is calculated using a respective interim temperature correction value for one or more temperature sensors associated with the chamber. A Gaussian-like distribution for thermal contributions from multiple radiation sources in the chamber can be used to simulate the temperature profile. The simulated temperature profile and the actual temperature profile are combined to form an estimated temperature profile. A final value for each respective temperature correction value is determined using an optimization algorithm which results in the estimated temperature profile being substantially uniform across the surface of the substrate. Each final temperature correction value is used as an offset to temperature measurements obtained from the corresponding temperature sensors.
摘要翻译：用于调节热处理室中的温度传感器读数的技术和系统包括基于衬底的测量来确定衬底的实际温度分布。使用与腔室相关联的一个或多个温度传感器的相应临时温度校正值来计算衬底的模拟温度曲线。可以使用室内来自多个辐射源的热贡献的高斯状分布来模拟温度分布。将模拟温度曲线和实际温度曲线组合以形成估计的温度曲线。使用优化算法来确定每个相应温度校正值的最终值，该优化算法导致估计的温度分布在衬底的表面上基本均匀。每个最终温度校正值用作从相应的温度传感器获得的温度测量的偏移。

58. 发明授权

US08829393B2 Scanned laser light source 有权
标题翻译：扫描激光光源
公开(公告)号：US08829393B2
公开(公告)日：2014-09-09
申请号：US13442128
申请日：2012-04-09
申请人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
发明人： Dean C. Jennings , Mark Yam , Abhilash J. Mayur , Vernon Behrens , Paul A. O'Brien , Leonid M. Tertitski , Alexander Goldin
IPC分类号： B23K26/08 , B23K26/00 , B23K26/03 , B23K26/06 , C23C16/04 , B23K26/073 , H01L21/00 , B23K26/42 , H01L21/67 , C23C8/00 , B23K26/34 , C23C16/48 , B23K26/14 , G02B27/09 , B23K26/04 , B23K26/12 , C23C8/22 , C23C8/10 , H01L21/20
CPC分类号： H01L21/02683 , B23K26/032 , B23K26/034 , B23K26/04 , B23K26/0608 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0652 , B23K26/0665 , B23K26/0738 , B23K26/082 , B23K26/083 , B23K26/0838 , B23K26/0869 , B23K26/123 , B23K26/125 , B23K26/142 , B23K26/32 , B23K26/34 , B23K26/705 , B23K2101/34 , B23K2101/40 , B23K2103/08 , B23K2103/50 , C23C8/00 , C23C8/10 , C23C8/22 , C23C16/047 , C23C16/481 , G02B27/0955 , H01L21/00 , H01L21/2026 , H01L21/67115
摘要： The thermal processing device includes a stage, a continuous wave electromagnetic radiation source, a series of lenses, a translation mechanism, a detection module, a three-dimensional auto-focus, and a computer system. The stage is configured to receive a substrate thereon. The continuous wave electromagnetic radiation source is disposed adjacent the stage, and is configured to emit continuous wave electromagnetic radiation along a path towards the substrate. The series of lenses is disposed between the continuous wave electromagnetic radiation source and the stage, and are configured to condense the continuous wave electromagnetic radiation into a line of continuous wave electromagnetic radiation on a surface of the substrate. The translation mechanism is configured to translate the stage and the line of continuous wave electromagnetic radiation relative to one another. The detection module is positioned within the path, and is configured to detect continuous wave electromagnetic radiation.
摘要翻译：热处理装置包括平台，连续波电磁辐射源，一系列透镜，平移机构，检测模块，三维自动对焦以及计算机系统。该台被配置为在其上接收基板。连续波电磁辐射源被设置在与该台相邻的位置，并且被配置成沿着朝向衬底的路径发射连续波电磁辐射。该系列透镜设置在连续波电磁辐射源和台之间，并被配置为将连续波电磁辐射冷凝成基片表面上的连续波电磁辐射线。翻译机构被配置为相对于彼此平移连续波电磁辐射的阶段和线。检测模块位于路径内，被配置为检测连续波电磁辐射。

59. 发明授权

US08744250B2 Edge ring for a thermal processing chamber 有权
标题翻译：用于热处理室的边缘环
公开(公告)号：US08744250B2
公开(公告)日：2014-06-03
申请号：US13193489
申请日：2011-07-28
申请人： Blake Koelmel , Joseph M. Ranish , Abhilash J. Mayur
发明人： Blake Koelmel , Joseph M. Ranish , Abhilash J. Mayur
IPC分类号： F27B5/00 , F27B5/06 , F27D5/00
CPC分类号： H01L21/67346 , F27D5/0037 , F27D11/12 , F27D2005/0081 , H01L21/67115 , H01L21/68735
摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.
摘要翻译：本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。更具体地，本发明的实施例提供一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个表面积增加结构。

60. 发明授权

US07863193B2 Integrated circuit fabrication process using a compression cap layer in forming a silicide with minimal post-laser annealing dopant deactivation 有权
标题翻译：在最小的后激光退火掺杂剂钝化中使用压缩盖层形成硅化物的集成电路制造工艺
公开(公告)号：US07863193B2
公开(公告)日：2011-01-04
申请号：US11836326
申请日：2007-08-09
申请人： Yi Ma , Philip Allan Kraus , Christopher Sean Olsen , Khaled Z. Ahmed , Abhilash J. Mayur
发明人： Yi Ma , Philip Allan Kraus , Christopher Sean Olsen , Khaled Z. Ahmed , Abhilash J. Mayur
IPC分类号： H01L21/44
CPC分类号： B23K26/0738 , B23K26/082 , B23K26/0876 , H01L21/268 , H01L21/28518 , H01L21/76828 , H01L29/665
摘要： Post-laser annealing dopant deactivation is minimized by performing certain silicide formation process steps prior to laser annealing. A base metal layer is deposited on the source-drain regions and the gate electrode, followed by deposition of an overlying compression cap layer, to prevent metal agglomeration at the silicon melting temperature. Thereafter, a rapid thermal process is performed to heat the substrate sufficiently to form metal silicide contacts at the top surfaces of the source-drain regions and of the gate electrode. The method further includes removing the remainder of the metal-containing layer and then depositing an optical absorber layer over the substrate prior to laser annealing near the silicon melting temperature.
摘要翻译：通过在激光退火之前执行特定的硅化物形成工艺步骤，使激光后退火掺杂剂失活最小化。在源极 - 漏极区域和栅极电极上沉积贱金属层，随后沉积上覆的压缩覆盖层，以防止在硅熔融温度下的金属聚集。此后，进行快速热处理以充分加热衬底，以在源极 - 漏极区域和栅电极的顶表面处形成金属硅化物接触。该方法还包括去除剩余的含金属层，然后在靠近硅熔化温度的激光退火之前，在衬底上沉积光吸收层。

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