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1. 发明授权

US6164816A Tuning a substrate temperature measurement system 有权
标题翻译：调整基板温度测量系统
公开(公告)号：US6164816A
公开(公告)日：2000-12-26
申请号：US133993
申请日：1998-08-14
申请人： Wolfgang Aderhold , Abhilash J. Mayur , Peter A. Knoot
发明人： Wolfgang Aderhold , Abhilash J. Mayur , Peter A. Knoot
IPC分类号： G01K15/00 , G01J5/00 , G01J5/10 , H01L21/26 , H01L21/66
CPC分类号： G01J5/0003 , G01J5/0007 , G01J2005/0048
摘要： A technique and system for tuning temperature sensor readings in a thermal processing chamber includes determining an actual temperature profile for a substrate based on measurements of the substrate. A simulated temperature profile for the substrate is calculated using a respective interim temperature correction value for one or more temperature sensors associated with the chamber. A Gaussian-like distribution for thermal contributions from multiple radiation sources in the chamber can be used to simulate the temperature profile. The simulated temperature profile and the actual temperature profile are combined to form an estimated temperature profile. A final value for each respective temperature correction value is determined using an optimization algorithm which results in the estimated temperature profile being substantially uniform across the surface of the substrate. Each final temperature correction value is used as an offset to temperature measurements obtained from the corresponding temperature sensors.
摘要翻译：用于调节热处理室中的温度传感器读数的技术和系统包括基于衬底的测量来确定衬底的实际温度分布。使用与腔室相关联的一个或多个温度传感器的相应临时温度校正值来计算衬底的模拟温度曲线。可以使用室内来自多个辐射源的热贡献的高斯状分布来模拟温度分布。将模拟温度曲线和实际温度曲线组合以形成估计的温度曲线。使用优化算法来确定每个相应温度校正值的最终值，该优化算法导致估计的温度分布在衬底的表面上基本均匀。每个最终温度校正值用作从相应的温度传感器获得的温度测量的偏移。

2. 发明申请

US20130043632A1 RAPID THERMAL PROCESSING CHAMBER WITH MICRO-POSITIONING SYSTEM 有权
公开(公告)号：US20130043632A1
公开(公告)日：2013-02-21
申请号：US13656150
申请日：2012-10-19
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lemer , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lemer , Nir Merry
IPC分类号： B23Q1/25
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.

3. 发明申请

US20130043235A1 RAPID THERMAL PROCESSING CHAMBER WITH MICRO-POSITIONING SYSTEM 有权
标题翻译：具有微定位系统的快速热处理室
公开(公告)号：US20130043235A1
公开(公告)日：2013-02-21
申请号：US13656158
申请日：2012-10-19
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： F27D11/00
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译：描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。

4. 发明授权

US08109669B2 Temperature uniformity measurement during thermal processing 有权
标题翻译：热处理期间的温度均匀性测量
公开(公告)号：US08109669B2
公开(公告)日：2012-02-07
申请号：US12273842
申请日：2008-11-19
申请人： Wolfgang Aderhold , Jallepally Ravi , Balasubramanian Ramachandran , Aaron M. Hunter , Ilias Iliopoulos
发明人： Wolfgang Aderhold , Jallepally Ravi , Balasubramanian Ramachandran , Aaron M. Hunter , Ilias Iliopoulos
IPC分类号： H01L21/66 , H01L21/324
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0846 , G01J2005/0081
摘要： Methods and systems for determining a radial differential metrology profile of a substrate heated in a process chamber is provided. Methods and systems for determining an angular or azimuthal differential metrology profile of a rotating substrate in a processing chamber are also provided. The radial and azimuthal differential metrology profiles are applied to adjust a reference metrology profile to provide a Virtual metrology of the process chamber. The virtual metrology is applied to control the performance of the process chamber.
摘要翻译：提供了用于确定在处理室中加热的衬底的径向微分计量学轮廓的方法和系统。还提供了用于确定处理室中的旋转衬底的角度或方位差分测量轮廓的方法和系统。应用径向和方位角微分计量分析来调整参考计量学概况，以提供处理室的虚拟计量。应用虚拟计量来控制处理室的性能。

5. 发明授权

US08111978B2 Rapid thermal processing chamber with shower head 有权
标题翻译：带淋浴头的快速热处理室
公开(公告)号：US08111978B2
公开(公告)日：2012-02-07
申请号：US12171994
申请日：2008-07-11
申请人： Khurshed Sorabji , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
发明人： Khurshed Sorabji , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
IPC分类号： A21B2/00
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/4584 , C23C16/481 , F27B17/0025 , H01L21/67098 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.
摘要翻译：提供了用于热处理基板的设备和方法。包含悬浮支撑组件的腔室，其构造成在衬底的加热和冷却期间将衬底定位在与板不同的距离处。在一个实施例中，板的表面上的多个开口构造成均匀地分布气体穿过衬底的径向表面。气体的分布可以在热处理期间将与反射回衬底的辐射能耦合到板的吸收区域以开始冷却衬底。所提供的方法和装置允许用于快速热处理基板的可控和有效的装置。

6. 发明申请

US20100008656A1 RAPID THERMAL PROCESSING CHAMBER WITH SHOWER HEAD 有权
标题翻译：具有淋浴头的快速热处理室
公开(公告)号：US20100008656A1
公开(公告)日：2010-01-14
申请号：US12171994
申请日：2008-07-11
申请人： KHURSHED SORABJI , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
发明人： KHURSHED SORABJI , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
IPC分类号： F26B19/00 , F26B3/28 , F21V7/00
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/4584 , C23C16/481 , F27B17/0025 , H01L21/67098 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.
摘要翻译：提供了用于热处理基板的设备和方法。包含悬浮支撑组件的腔室，其构造成在衬底的加热和冷却期间将衬底定位在与板不同的距离处。在一个实施例中，板的表面上的多个开口构造成均匀地分布气体穿过衬底的径向表面。气体的分布可以在热处理期间将具有未反射回衬底的辐射能量与板的吸收区域耦合以开始冷却衬底。所提供的方法和装置允许用于快速热处理基板的可控和有效的装置。

7. 发明授权

US07414224B2 Backside rapid thermal processing of patterned wafers 有权
标题翻译：图案化晶片的背面快速热处理
公开(公告)号：US07414224B2
公开(公告)日：2008-08-19
申请号：US11610759
申请日：2006-12-14
申请人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
发明人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
IPC分类号： F27B5/14 , A21B2/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
摘要翻译：公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。辐射灯阵列将辐射引导到晶片的背面以加热晶片。在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。

8. 发明申请

US20080090309A1 CONTROLLED ANNEALING METHOD 审中-公开
标题翻译：控制退火方法
公开(公告)号：US20080090309A1
公开(公告)日：2008-04-17
申请号：US11751027
申请日：2007-05-20
申请人： JOSEPH RANISH , Balasubramanian Ramachandran , Ravi Jallepally , Sundar Ramamurthy , Vedapuram Achutharaman , Brian Haas , Aaron Hunter , Wolfgang Aderhold
发明人： JOSEPH RANISH , Balasubramanian Ramachandran , Ravi Jallepally , Sundar Ramamurthy , Vedapuram Achutharaman , Brian Haas , Aaron Hunter , Wolfgang Aderhold
IPC分类号： H01L21/324
CPC分类号： H01L21/67248 , H01L21/324 , H01L21/67115
摘要： A method for rapid thermal annealing is disclosed. As the substrate is inserted into an annealing chamber, it begins to heat due to the heat radiating from chamber components that were heated when a previous substrate was annealed. Thus, the leading edge of the substrate may be at an elevated temperature while the trailing edge of the substrate may be at room temperature while the substrate is inserted causing a temperature gradient is present across the substrate. Once the substrate is completely inserted into the annealing chamber, the temperature gradient may still be present. By compensating for the temperature gradient across the substrate, the substrate may be annealed uniformly.
摘要翻译：公开了一种快速热退火的方法。当衬底被插入退火室时，由于从先前的衬底退火时被加热的腔室部件散发的热量开始加热。因此，衬底的前缘可能处于升高的温度，而衬底的后缘可能在室温下而衬底被插入，导致衬底上存在温度梯度。一旦基板完全插入退火室，温度梯度可能仍然存在。通过补偿跨越衬底的温度梯度，衬底可以均匀退火。

9. 发明申请

US20070215049A1 Transfer of wafers with edge grip 审中-公开
标题翻译：转移晶圆与边缘抓地力
公开(公告)号：US20070215049A1
公开(公告)日：2007-09-20
申请号：US11375709
申请日：2006-03-14
申请人： Wolfgang Aderhold , Teresa Trowbridge
发明人： Wolfgang Aderhold , Teresa Trowbridge
IPC分类号： B32B3/02 , C23C16/00
CPC分类号： H01L21/68707 , H01L21/67115 , Y10T428/21
摘要： Three wafer support fixtures transfer a wafer for thermal processing in an inverted orientation within a heating chamber. Two co-planar support fixtures grab the wafer edge inside the chamber from a blade within a 1.5 mm wafer exclusion zone and hold it above the edge ring during heat-up and then withdraw thermal processing. A third support fixture chucks the wafer backside and transfers it to sloping support areas of the edge ring. The three support fixtures inside the chamber are individually controlled from outside. Alternatively, an arm connected to a controller is connected to the three support fixtures
摘要翻译：三个晶片支撑固定装置在加热室内以反向取向转移用于热处理的晶片。两个共面支撑固定装置从1.5mm晶圆排除区域内的叶片抓住室内的晶片边缘，并在加热期间将其保持在边缘环上方，然后退回热处理。第三支撑夹具夹住晶片背面并将其转移到边缘环的倾斜支撑区域。室内的三个支撑固定装置从外部单独控制。或者，连接到控制器的臂连接到三个支撑固定装置

10. 发明授权

US09431278B2 Backside rapid thermal processing of patterned wafers 有权
标题翻译：图案化晶片的背面快速热处理
公开(公告)号：US09431278B2
公开(公告)日：2016-08-30
申请号：US12193439
申请日：2008-08-18
申请人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
发明人： Wolfgang Aderhold , Sundar Ramamurthy , Aaron Hunter
IPC分类号： F27B5/14 , F26B19/00 , H01L21/67 , F27B17/00 , F27D19/00 , F27D21/00
CPC分类号： H01L21/67115 , F27B17/0025 , F27D19/00 , F27D21/0014
摘要： Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.
摘要翻译：公开了诸如快速热处理（RTP）装置和方法的晶片或其它基板的热处理的装置和方法。辐射灯阵列将辐射引导到晶片的背面以加热晶片。在一个或多个实施例中，其上形成图案化集成电路的晶片的正面面向辐射反射器。在一个或多个实施例中，从反射器一侧热温度地监测晶片的温度和反射率。

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