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1. 发明授权

US07754518B2 Millisecond annealing (DSA) edge protection 有权
标题翻译：毫秒退火（DSA）边缘保护
公开(公告)号：US07754518B2
公开(公告)日：2010-07-13
申请号：US12032475
申请日：2008-02-15
申请人： Blake Koelmel , Robert C. McIntosh , David D L Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
发明人： Blake Koelmel , Robert C. McIntosh , David D L Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
IPC分类号： H01L21/00
CPC分类号： H01L21/67115 , H01L21/268 , H01L21/68735 , H01L21/68742
摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.
摘要翻译：提供了一种用于热处理衬底的方法和装置。衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

2. 发明授权

US07923280B2 Millisecond annealing (DSA) edge protection 有权
标题翻译：毫秒退火（DSA）边缘保护
公开(公告)号：US07923280B2
公开(公告)日：2011-04-12
申请号：US12834620
申请日：2010-07-12
申请人： Blake Koelmel , Robert C. McIntosh , David D L Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
发明人： Blake Koelmel , Robert C. McIntosh , David D L Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
IPC分类号： H01L21/00
CPC分类号： H01L21/67115 , H01L21/268 , H01L21/68735 , H01L21/68742
摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.
摘要翻译：提供了一种用于热处理衬底的方法和装置。衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

3. 发明申请

US20100273334A1 MILLISECOND ANNEALING (DSA) EDGE PROTECTION 有权
标题翻译： MILLISECOND ANNEALING（DSA）边缘保护
公开(公告)号：US20100273334A1
公开(公告)日：2010-10-28
申请号：US12834620
申请日：2010-07-12
申请人： Blake Koelmel , Robert C. McIntosh , David DL Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
发明人： Blake Koelmel , Robert C. McIntosh , David DL Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
IPC分类号： H01L21/26
CPC分类号： H01L21/67115 , H01L21/268 , H01L21/68735 , H01L21/68742
摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.
摘要翻译：提供了一种用于热处理衬底的方法和装置。衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

4. 发明申请

US20090209112A1 MILLISECOND ANNEALING (DSA) EDGE PROTECTION 有权
标题翻译： MILLISECOND ANNEALING（DSA）边缘保护
公开(公告)号：US20090209112A1
公开(公告)日：2009-08-20
申请号：US12032475
申请日：2008-02-15
申请人： Blake Koelmel , Robert C. McIntosh , David DL Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
发明人： Blake Koelmel , Robert C. McIntosh , David DL Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
IPC分类号： H01L21/268 , B23Q3/00
CPC分类号： H01L21/67115 , H01L21/268 , H01L21/68735 , H01L21/68742
摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.
摘要翻译：提供了一种用于热处理衬底的方法和装置。衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

5. 发明授权

US08309475B2 Apparatus and method of aligning and positioning a cold substrate on a hot surface 有权
标题翻译：将冷基板对准和定位在热表面上的装置和方法
公开(公告)号：US08309475B2
公开(公告)日：2012-11-13
申请号：US13343523
申请日：2012-01-04
申请人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
发明人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
IPC分类号： H01L21/26
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

6. 发明授权

US08097543B2 Apparatus and method of aligning and positioning a cold substrate on a hot surface 有权
公开(公告)号：US08097543B2
公开(公告)日：2012-01-17
申请号：US12839282
申请日：2010-07-19
申请人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
发明人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
IPC分类号： H01L21/26
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.

7. 发明申请

US20090181553A1 APPARATUS AND METHOD OF ALIGNING AND POSITIONING A COLD SUBSTRATE ON A HOT SURFACE 审中-公开
标题翻译：在热表面上对准和定位冷基底的装置和方法
公开(公告)号：US20090181553A1
公开(公告)日：2009-07-16
申请号：US12013355
申请日：2008-01-11
申请人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
发明人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
IPC分类号： H01L21/268
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

8. 发明申请

US20120122253A1 APPARATUS AND METHOD OF ALIGNING AND POSITIONING A COLD SUBSTRATE ON A HOT SURFACE 有权
标题翻译：在热表面上对准和定位冷基底的装置和方法
公开(公告)号：US20120122253A1
公开(公告)日：2012-05-17
申请号：US13343523
申请日：2012-01-04
申请人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
发明人： Blake Koelmel , Abhilash J. Mayur , Kai Ma , Alexander N. Lerner
IPC分类号： H01L21/66 , H01L21/26
CPC分类号： H01L21/67248 , C23C16/4586 , H01L21/68742
摘要： Embodiments of the invention contemplate a method, apparatus and system that are used to support and position a substrate on a surface that is at a different temperature than the initial, or incoming, substrate temperature. Embodiments of the invention may also include a method of controlling the transfer of heat between a substrate and substrate support positioned in a processing chamber. The apparatus and methods described herein generally may also provide an inexpensive and simple way of accurately positioning a substrate on a substrate support that is positioned in a semiconductor processing chamber. Substrate processing chambers that can benefit from the various embodiments described herein include, but are not limited to RTP, CVD, PVD, ALD, plasma etching, and/or laser annealing chambers.
摘要翻译：本发明的实施方案考虑了一种方法，装置和系统，其用于将衬底支撑并定位在与初始或进入衬底温度不同的温度的表面上。本发明的实施例还可以包括控制位于处理室中的衬底和衬底支撑件之间的热传递的方法。本文所述的装置和方法通常还可以提供将衬底精确地定位在位于半导体处理室中的衬底支撑件上的便宜且简单的方法。可受益于本文描述的各种实施方案的衬底处理室包括但不限于RTP，CVD，PVD，ALD，等离子体蚀刻和/或激光退火室。

9. 发明授权

US08434937B2 Method and apparatus for detecting the substrate temperature in a laser anneal system 有权
标题翻译：用于检测激光退火系统中的衬底温度的方法和装置
公开(公告)号：US08434937B2
公开(公告)日：2013-05-07
申请号：US12475404
申请日：2009-05-29
申请人： Blake Koelmel , Abhilash J. Mayur
发明人： Blake Koelmel , Abhilash J. Mayur
IPC分类号： G01J5/02 , H01L21/00
CPC分类号： H01L21/67248 , G01J5/048 , H01L21/67253 , H01L21/68742
摘要： Embodiments of the invention provide a method and an apparatus for detecting the temperature of a substrate surface. In one embodiment, a method for measuring the temperature is provided which includes exposing the surface of the substrate to a laser beam radiating from a laser source, radiating emitted light from a portion of the surface of the substrate, through the shadow ring, and towards a thermal sensor, and determining the temperature of the portion of the surface of the substrate from the emitted light. The substrate may be disposed on a substrate support within a treatment region and a shadow ring may be disposed between the laser source and the surface of the substrate. The shadow ring may be selectively opaque to the laser beam and transparent to the emitted light.
摘要翻译：本发明的实施例提供了一种用于检测衬底表面的温度的方法和装置。在一个实施例中，提供了一种用于测量温度的方法，其包括将衬底的表面暴露于从激光源辐射的激光束，从衬底表面的一部分通过阴影环辐射发射的光，并朝向热传感器，并且从所发射的光确定衬底的表面部分的温度。衬底可以设置在处理区域内的衬底支撑件上，并且阴影环可以设置在激光源和衬底的表面之间。阴影环可以选择性地对激光束不透明并且对于发射的光是透明的。

10. 发明授权

US08744250B2 Edge ring for a thermal processing chamber 有权
标题翻译：用于热处理室的边缘环
公开(公告)号：US08744250B2
公开(公告)日：2014-06-03
申请号：US13193489
申请日：2011-07-28
申请人： Blake Koelmel , Joseph M. Ranish , Abhilash J. Mayur
发明人： Blake Koelmel , Joseph M. Ranish , Abhilash J. Mayur
IPC分类号： F27B5/00 , F27B5/06 , F27D5/00
CPC分类号： H01L21/67346 , F27D5/0037 , F27D11/12 , F27D2005/0081 , H01L21/67115 , H01L21/68735
摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.
摘要翻译：本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。更具体地，本发明的实施例提供一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个表面积增加结构。

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